PTFA240451F [INFINEON]
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-31265, 2 PIN;
| 型号： | PTFA240451F |
| 厂家： | 
Infineon |
| 描述： | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-31265, 2 PIN 放大器 CD 晶体管 |
| 文件： | 总12页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFA240451E
PTFA240451F
Thermally-Enhanced High Power RF LDMOS FETs
45 W, 2420 – 2480 MHz
Description
The PTFA240451E and PTFA240451F are thermally-enhanced,
45-watt, internally-matched GOLDMOS FETs intended for
PTFA240451E
Package H-30265-2
®
CDMA2000 and WiMAX applications from 2420 to 2480 MHz.
Thermally-enhanced packages provide the coolest operation
available. Full gold metallization ensures excellent device lifetime
and reliability.
PTFA240451F*
Package H-31265-2
Features
Three-Carrier CDMA2000 Performance
•
Thermally-enhanced, lead-free and
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
RoHS•compliant packages
•
•
Broadband internal matching
Efficiency
45
40
35
30
25
20
15
10
5
-38
-42
-46
-50
-54
-58
-62
-66
-70
-74
ACP Up
ACP Low
ALT Up
Typical two-carrier CDMA performance at 2450
MHz, 28 V
- Average output power = 10 W
- Linear Gain = 14 dB
- Efficiency = 27%
- Adjacent channel power = –45 dBc
•
•
Typical CW performance, 2450 MHz, 28 V
- Output power at P–1dB = 50 W
- Efficiency = 54%
Efficiency
40
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
0
•
•
Excellent thermal stability, low HCI drift
30
32
34
36
38
42
Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
Output Power, Avg. (dBm)
RF Characteristics
3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
= 28 V, I = 450 mA, P = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 kHz
V
DD
DQ
OUT
bandwidth at ƒ ± 2.135 MHz offset
C
Characteristic
Gain
Symbol
Min
—
Typ
14
Max
—
Unit
dB
G
ps
Drain Efficiency
Adjacent Channel Power Ratio
hD
—
31
—
%
ACPR
—
–45
—
dBc
All published data at T
= 25°C unless otherwise indicated
*See Infineon distributor for future availability.
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 12
Rev. 03, 2006-07-17
PTFA240451E
PTFA240451F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
= 450 mA, P = 45 W PEP, ƒ = 2480 MHz, tone spacing = 1 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
13.5
39
Typ
14
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
40
—
%
Intermodulation Distortion
IMD
—
–30
–28
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
V
DS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
= 28 V, V
= 63 V, V
= 0 V
= 0 V
I
I
—
1.0
10.0
—
µA
µA
W
GS
GS
DSS
DSS
—
—
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
= 10 V, V = 0.1 V
R
DS(on)
—
0.17
2.5
—
DS
= 28 V, I
= 450 mA
V
GS
2.0
—
3.0
1.0
V
DQ
= 10 V, V = 0 V
I
µA
DS
GSS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
V
DSS
V
GS
–0.5 to +12
200
V
T
J
°C
P
D
196
W
1.12
W/°C
°C
T
STG
–40 to +150
0.89
Thermal Resistance (T
= 70°C, 45 W CW)
R
qJC
°C/W
CASE
Ordering Information
Type
Package Outline
Package Description
Marking
PTFA240451E
PTFA240451F*
H-30265-2
H-31265-2
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
PTFA240451E
PTFA240451F
*See Infineon distributor for future availability.
Data Sheet
2 of 12
Rev. 03, 2006-07-17
PTFA240451E
PTFA240451F
Typical Performance (data taken in a production test fixture)
Typical POUT, Gain & Efficiency (at P-1dB)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
vs. Frequency
VDD = 28 V, IDQ = 450 mA
VDD = 28 V, IDQ = 450 mA, ƒ1 = 2449 MHz, ƒ2 = 2450 MHz
-20
16
15
14
13
12
57
55
53
51
49
Efficiency
-30
5th Order
3rd Order
7th Order
-40
-50
-60
-70
-80
Gain
Output Power
30
32
34
36
38
40
42
44
2420 2430 2440 2450 2460 2470 2480
Frequency (MHz)
Output Power, Avg. (dBm)
2-Tone Broadband Performance
IM3 vs. Output Power for Selected Biases
VDD = 28 V, IDQ = 450 mA, POUT Avg. = 43.52 dBm
VDD = 28 V, ƒ1 = 2449 MHz, ƒ2 = 2450 MHz
-20
50
-5
Efficiency
-30
-40
-50
-60
-70
40
30
20
10
0
-10
-15
-20
-25
-30
337 mA
562 mA
Gain
450 mA
Return Loss
2480
30
32
34
36
38
40
42
44
2400
2420
2440
2460
2500
Output Power, Avg. (dBm)
Frequency (MHz)
Data Sheet
3 of 12
Rev. 03, 2006-07-17
PTFA240451E
PTFA240451F
Typical Performance (cont.)
Power Sweep
Gain & Efficiency vs. Output Power
VDD = 28 V, ƒ = 2450 MHz
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
16.0
16
15
14
13
12
11
10
60
50
40
30
20
10
0
15.5
IDQ = 675 mA
15.0
14.5
Gain
14.0
IDQ = 450 mA
13.5
Efficiency
13.0
12.5
IDQ = 225 mA
12.0
30 32 34 36 38 40 42 44 46 48
30
34
38
42
46
50
Output Power (dBm)
Output Power (dBm)
IS-95 CDMA Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
Output Power (at 1 dB Compression)
vs. Supply Voltage
IDQ = 450 mA, ƒ = 2450 MHz
TCASE = 25°C
TCASE = 90°C
35
30
25
20
15
10
5
-35
-40
-45
-50
-55
-60
-65
-70
-75
49
48
47
46
45
ACP ƒC–0.75 MHz
Efficiency
ACPR ƒC+1.98 MHz
0
30
32
34
36
38
40
42
24
26
28
30
32
Supply Voltage (V)
Output Power, Avg. (dBm)
Data Sheet
4 of 12
Rev. 03, 2006-07-17
PTFA240451E
PTFA240451F
Typical Performance (cont.)
Bias Voltage vs. Temperature
WiMAX Performance
Voltage normalized to typical gate voltage,
VDD = 28 V, IDQ = 0.45 A,
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
series show current
0.09 A
0.28 A
0.46 A
0.70 A
1.39 A
2.09 A
2.78 A
3.48 A
4.17 A
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
36
30
24
18
12
6
-15
-20
-25
-30
-35
-40
-45
Efficiency
ƒ = 2.62 GHz
ƒ = 2.68 GHz
ƒ = 2.65 GHz
0
-20
0
20
40
60
80
100
15
20
25
30
35
40
45
Case Temperature (°C)
Output Power (dBm)
WiMAX Performance
VDD = 28 V, ƒ = 2450 MHz
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-15
-20
IDQ = 0.28 A
-25
IDQ = 0.67 A
-30
-35
IDQ = 0.45 A
-40
-45
15
20
25
30
35
40
45
Output Power (dBm)
Data Sheet
5 of 12
Rev. 03, 2006-07-17
PTFA240451E
PTFA240451F
Broadband Circuit Impedance
Frequency
MHz
Z Source W
Z Load W
D
R
jX
R
jX
Z Source
Z Load
2400
22.12
20.27
18.30
15.24
13.45
–18.74
–18.71
–19.18
–19.95
–20.19
6.98
6.73
6.61
6.17
5.92
–2.35
–2.14
–2.17
–2.32
–2.41
2420
2450
G
2480
2500
S
Z Load
2500 MHz
2400 MHz
Z Source
2400 MHz
2500 MHz
Z0 = 50 W
See next page for circuit information
Data Sheet
6 of 12
Rev. 03, 2006-07-17
PTFA240451E
PTFA240451F
Reference Circuit
C1
0.001µF
R1
1.3KΩ
R2
1.2KΩ
QQ1
LM7805
VDD
Q1
BCP56
C2
C3
0.001µF
0.001µF
R3
2KΩ
R4
2KΩ
R5
5.1KΩ
R6
10Ω
L1
VDD
C4
10 µF
35V
C5
.1µF
R7
C6
.1µF
C7
C8
C11
4.5pF
C12
1µF
C13
.1µF
C14
10µF
50V
5.1KΩ
.01µF 4.5pF
l4
R8
10Ω
l8
l9
C9
4.5pF
C20
4.5pF
DUT
RF_IN
l1
l2
l3
l5
l6
l7
l10
l11
l12
l13
l14
RF_OUT
C10
1.8pF
C19
1.2pF
L2
C15
4.5pF
C16
1µF
C17
.1µF
C18
10µF
50V
Reference circuit schematic for ƒ = 2480 MHz
Circuit Assembly Information
DUT
PCB
PTFA240451E or PTFA240451F
0.76 mm [.030"] thick, e = 4.5
LDMOS Transistor
Rogers TMM4
2 oz. copper
r
Microstrip
Electrical Characteristics at 2480 MHz1
Dimensions: L xW (mm) Dimensions: L xW (in.)
l1
l2
l3
l4
l5
l6
l7
0.102 l , 50.0 W
0.050 l , 44.0 W
0.094 l , 44.0 W
0.148 l , 64.0 W
0.016 l , 44.0 W
0.021 l , 14.7 W
0.080 l , 8.2 W
6.68 x 1.40
3.12 x 1.78
6.10 x 1.78
9.86 x 0.89
1.04 x 1.78
1.35 x 7.62
4.78 x 14.86
19.30 x 1.40
2.84 x 19.05
5.16 x 19.05 / 1.40
2.95 x 1.40
7.62 x 1.40
3.81 x 1.40
0.263 x 0.055
0.123 x 0.070
0.240 x 0.070
0.388 x 0.035
0.041 x 0.070
0.053 x 0.300
0.188 x 0.585
0.760 x 0.055
0.112 x 0.750
0.203 x 0.750 / 0.055
0.116 x 0.055
0.300 x 0.055
0.150 x 0.055
l8, l9
l10
l11 (taper)
l12
l13
0.295 l , 50.0 W
0.049 l , 6.5 W
0.079 l , 6.5 W / 50.0 W
0.045 l , 50.0 W
0.117 l , 50.0 W
0.058 l , 50.0 W
l14
1
Electrical characteristics are rounded.
Data Sheet
7 of 12
Rev. 03, 2006-07-17
PTFA240451E
PTFA240451F
Reference Circuit (cont.)
R5 C5
R3C3
R1
C1
C11 C12
VDD
QQ1
C2
R4
C4
LM
Q1
10
+
35V
R2
R6
R7
C7
C14
VDD
VDD
C6
C13
C8
R8
C20
C17
C9
C19
C10
C18
C16
C15
A240451in_01
A240451out_01
Reference circuit assembly diagram* (not to scale)
Component
Description
Suggested Manufacturer P/N or Comment
C1, C2, C3
Capacitor, 0.001 µF
Digi-Key
Digi-Key
Digi-Key
ATC
PCC1772CT-ND
PCS6106TR-ND
PCC104BCT-ND
200B 103
C4
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
C5, C6, C13, C17
C7
Ceramic capacitor, 0.01 µF
Ceramic capacitor, 4.5 pF
C8, C9, C11, C15,
C20
ATC
100B 4R5
C10
Ceramic capacitor, 1.8 pF
Capacitor, 1 µF
ATC
100B 1R8
C12, C16
C14, C18
C19
ATC
920C105KW
TPSE106K050R0400
100B 1R2
Tantalum capacitor, 10 µF, 50 V
Ceramic capacitor, 1.2 pF
Ferrite
Garrett Electronics
ATC
L1, L2
Q1
Philips
BDS46/3.8.8-452
BCP56
Transistor
Infineon
QQ1
Voltage regulator
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
LM7805
R1
Chip resistor, 1.3 k-ohms
Chip resistor, 1.2 k-ohms
Chip resistor, 2 k-ohms
Potentiometer, 2 k-ohms
Chip resistor, 5.1 k-ohms
Chip resistor, 10 ohms
P1.3KGCT-ND
P1.2KGCT-ND
P2.0KECT-ND
3224W-202ETR-ND
P5.1KECT-ND
P10ECT-ND
R2
R3
R4
R5, R7
R6, R8
*Gerber Files for this circuit available on request
Data Sheet
8 of 12
Rev. 03, 2006-07-17
PTFA240451E
PTFA240451F
Package Outline Specifications
Package H-30265-2
7.11
[.280]
(45° X 2.03
[.080])
C
L
D
2X 2.59±0.38
[.107 ±.015]
S
LID 10.16±0.25
[.400±.010]
C
FLANGE 9.78
L
15.60±0.51
[.614±.020]
[.385]
G
4x 1.52
[.060]
2X R1.60
[.063]
2x 7.11
[.280]
15.23
[.600]
SPH 1.57
[.062]
10.16±0.25
[.400±.010]
3.48±0.38
[.137±.015]
0.0381 [.0015] -A-
20.31
[.800]
1.02
[.040]
H-30265-2-1-2303
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
9 of 12
Rev. 03, 2006-07-17
PTFA240451E
PTFA240451F
Package Outline Specifications (cont.)
Package H-31265-2
(45° X 2.03
[.080])
C
L
2X 2.59±0.51
[.102±.020]
D
G
LID 10.16±0.25
[.400±.010]
15.49±.51
[.610±.020]
C
10.16
[.400]
L
FLANGE 10.16
[.400]
4X R0.63
[R.025] MAX
R1.27
[R.050]
2X 7.11
[.280]
10.16±0.25
[.400±.010]
SPH 1.57
[.062]
|0.025[.001]|-A-
h- 31265-2_265-case
3.56±.38
[.140±.015]
1.02
[.040]
10.16
[.400]
S
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
10 of 12
Rev. 03, 2006-07-17
PTFA240451EF
Confidential, Limited Internal Distribution
Revision History:
2006-07-17
Data Sheet
Previous Version:
2005-08-22, Data Sheet
Page
Subjects (major changes since last revision)
Add graphs for WiMAX characterization.
5
1 – 2, 9 – 10
Update package numbers, no change to outline.
Notes:
Data Sheet
11 of 12
Rev. 03, 2006-07-17
PTFA240451E
PTFA240451F
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
®
GOLDMOS is a registered trademark of Infineon Technologies AG.
Edition 2006-07-17
Published by
InfineonTechnologies AG
81726 München, Germany
© InfineonTechnologies AG 2005.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
12 of 12
Rev. 03, 2006-07-17
相关型号：
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INFINEON
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