PTFA240451F [INFINEON]

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-31265, 2 PIN;
PTFA240451F
型号: PTFA240451F
厂家: Infineon    Infineon
描述:

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-31265, 2 PIN

放大器 CD 晶体管
文件: 总12页 (文件大小:229K)
中文:  中文翻译
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PTFA240451E  
PTFA240451F  
Thermally-Enhanced High Power RF LDMOS FETs  
45 W, 2420 – 2480 MHz  
Description  
The PTFA240451E and PTFA240451F are thermally-enhanced,  
45-watt, internally-matched GOLDMOS FETs intended for  
PTFA240451E  
Package H-30265-2  
®
CDMA2000 and WiMAX applications from 2420 to 2480 MHz.  
Thermally-enhanced packages provide the coolest operation  
available. Full gold metallization ensures excellent device lifetime  
and reliability.  
PTFA240451F*  
Package H-31265-2  
Features  
Three-Carrier CDMA2000 Performance  
Thermally-enhanced, lead-free and  
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz  
RoHS•compliant packages  
Broadband internal matching  
Efficiency  
45  
40  
35  
30  
25  
20  
15  
10  
5
-38  
-42  
-46  
-50  
-54  
-58  
-62  
-66  
-70  
-74  
ACP Up  
ACP Low  
ALT Up  
Typical two-carrier CDMA performance at 2450  
MHz, 28 V  
- Average output power = 10 W  
- Linear Gain = 14 dB  
- Efficiency = 27%  
- Adjacent channel power = –45 dBc  
Typical CW performance, 2450 MHz, 28 V  
- Output power at P–1dB = 50 W  
- Efficiency = 54%  
Efficiency  
40  
Integrated ESD protection: Human Body Model,  
Class 2 (minimum)  
0
Excellent thermal stability, low HCI drift  
30  
32  
34  
36  
38  
42  
Capable of handling 10:1 VSWR @ 28 V,  
45 W (CW) output power  
Output Power, Avg. (dBm)  
RF Characteristics  
3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)  
= 28 V, I = 450 mA, P = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 kHz  
V
DD  
DQ  
OUT  
bandwidth at ƒ ± 2.135 MHz offset  
C
Characteristic  
Gain  
Symbol  
Min  
Typ  
14  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
Adjacent Channel Power Ratio  
hD  
31  
%
ACPR  
–45  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
*See Infineon distributor for future availability.  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 12  
Rev. 03, 2006-07-17  
PTFA240451E  
PTFA240451F  
RF Characteristics (cont.)  
Two-tone Measurements (tested in Infineon test fixture)  
V
DD  
= 28 V, I  
= 450 mA, P = 45 W PEP, ƒ = 2480 MHz, tone spacing = 1 MHz  
OUT  
DQ  
Characteristic  
Gain  
Symbol  
Min  
13.5  
39  
Typ  
14  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
40  
%
Intermodulation Distortion  
IMD  
–30  
–28  
dBc  
DC Characteristics  
Characteristic  
Conditions  
Symbol  
Min  
65  
Typ  
Max  
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
V
DS  
V
DS  
V
GS  
V
DS  
V
GS  
= 0 V, I = 10 mA  
V
(BR)DSS  
DS  
= 28 V, V  
= 63 V, V  
= 0 V  
= 0 V  
I
I
1.0  
10.0  
µA  
µA  
W
GS  
GS  
DSS  
DSS  
On-State Resistance  
Operating Gate Voltage  
Gate Leakage Current  
= 10 V, V = 0.1 V  
R
DS(on)  
0.17  
2.5  
DS  
= 28 V, I  
= 450 mA  
V
GS  
2.0  
3.0  
1.0  
V
DQ  
= 10 V, V = 0 V  
I
µA  
DS  
GSS  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Junction Temperature  
Total Device Dissipation  
Above 25°C derate by  
Storage Temperature Range  
V
DSS  
V
GS  
–0.5 to +12  
200  
V
T
J
°C  
P
D
196  
W
1.12  
W/°C  
°C  
T
STG  
–40 to +150  
0.89  
Thermal Resistance (T  
= 70°C, 45 W CW)  
R
qJC  
°C/W  
CASE  
Ordering Information  
Type  
Package Outline  
Package Description  
Marking  
PTFA240451E  
PTFA240451F*  
H-30265-2  
H-31265-2  
Thermally-enhanced slotted flange, single-ended  
Thermally-enhanced earless flange, single-ended  
PTFA240451E  
PTFA240451F  
*See Infineon distributor for future availability.  
Data Sheet  
2 of 12  
Rev. 03, 2006-07-17  
PTFA240451E  
PTFA240451F  
Typical Performance (data taken in a production test fixture)  
Typical POUT, Gain & Efficiency (at P-1dB)  
Intermodulation Distortion vs. Output Power  
(as measured in a broadband circuit)  
vs. Frequency  
VDD = 28 V, IDQ = 450 mA  
VDD = 28 V, IDQ = 450 mA, ƒ1 = 2449 MHz, ƒ2 = 2450 MHz  
-20  
16  
15  
14  
13  
12  
57  
55  
53  
51  
49  
Efficiency  
-30  
5th Order  
3rd Order  
7th Order  
-40  
-50  
-60  
-70  
-80  
Gain  
Output Power  
30  
32  
34  
36  
38  
40  
42  
44  
2420 2430 2440 2450 2460 2470 2480  
Frequency (MHz)  
Output Power, Avg. (dBm)  
2-Tone Broadband Performance  
IM3 vs. Output Power for Selected Biases  
VDD = 28 V, IDQ = 450 mA, POUT Avg. = 43.52 dBm  
VDD = 28 V, ƒ1 = 2449 MHz, ƒ2 = 2450 MHz  
-20  
50  
-5  
Efficiency  
-30  
-40  
-50  
-60  
-70  
40  
30  
20  
10  
0
-10  
-15  
-20  
-25  
-30  
337 mA  
562 mA  
Gain  
450 mA  
Return Loss  
2480  
30  
32  
34  
36  
38  
40  
42  
44  
2400  
2420  
2440  
2460  
2500  
Output Power, Avg. (dBm)  
Frequency (MHz)  
Data Sheet  
3 of 12  
Rev. 03, 2006-07-17  
PTFA240451E  
PTFA240451F  
Typical Performance (cont.)  
Power Sweep  
Gain & Efficiency vs. Output Power  
VDD = 28 V, ƒ = 2450 MHz  
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz  
16.0  
16  
15  
14  
13  
12  
11  
10  
60  
50  
40  
30  
20  
10  
0
15.5  
IDQ = 675 mA  
15.0  
14.5  
Gain  
14.0  
IDQ = 450 mA  
13.5  
Efficiency  
13.0  
12.5  
IDQ = 225 mA  
12.0  
30 32 34 36 38 40 42 44 46 48  
30  
34  
38  
42  
46  
50  
Output Power (dBm)  
Output Power (dBm)  
IS-95 CDMA Performance  
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz  
Output Power (at 1 dB Compression)  
vs. Supply Voltage  
IDQ = 450 mA, ƒ = 2450 MHz  
TCASE = 25°C  
TCASE = 90°C  
35  
30  
25  
20  
15  
10  
5
-35  
-40  
-45  
-50  
-55  
-60  
-65  
-70  
-75  
49  
48  
47  
46  
45  
ACP ƒC–0.75 MHz  
Efficiency  
ACPR ƒC+1.98 MHz  
0
30  
32  
34  
36  
38  
40  
42  
24  
26  
28  
30  
32  
Supply Voltage (V)  
Output Power, Avg. (dBm)  
Data Sheet  
4 of 12  
Rev. 03, 2006-07-17  
PTFA240451E  
PTFA240451F  
Typical Performance (cont.)  
Bias Voltage vs. Temperature  
WiMAX Performance  
Voltage normalized to typical gate voltage,  
VDD = 28 V, IDQ = 0.45 A,  
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,  
sample rate = 4 MHz)  
series show current  
0.09 A  
0.28 A  
0.46 A  
0.70 A  
1.39 A  
2.09 A  
2.78 A  
3.48 A  
4.17 A  
1.03  
1.02  
1.01  
1.00  
0.99  
0.98  
0.97  
0.96  
0.95  
36  
30  
24  
18  
12  
6
-15  
-20  
-25  
-30  
-35  
-40  
-45  
Efficiency  
ƒ = 2.62 GHz  
ƒ = 2.68 GHz  
ƒ = 2.65 GHz  
0
-20  
0
20  
40  
60  
80  
100  
15  
20  
25  
30  
35  
40  
45  
Case Temperature (°C)  
Output Power (dBm)  
WiMAX Performance  
VDD = 28 V, ƒ = 2450 MHz  
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,  
sample rate = 4 MHz)  
-15  
-20  
IDQ = 0.28 A  
-25  
IDQ = 0.67 A  
-30  
-35  
IDQ = 0.45 A  
-40  
-45  
15  
20  
25  
30  
35  
40  
45  
Output Power (dBm)  
Data Sheet  
5 of 12  
Rev. 03, 2006-07-17  
PTFA240451E  
PTFA240451F  
Broadband Circuit Impedance  
Frequency  
MHz  
Z Source W  
Z Load W  
D
R
jX  
R
jX  
Z Source  
Z Load  
2400  
22.12  
20.27  
18.30  
15.24  
13.45  
–18.74  
–18.71  
–19.18  
–19.95  
–20.19  
6.98  
6.73  
6.61  
6.17  
5.92  
–2.35  
–2.14  
–2.17  
–2.32  
–2.41  
2420  
2450  
G
2480  
2500  
S
Z Load  
2500 MHz  
2400 MHz  
Z Source  
2400 MHz  
2500 MHz  
Z0 = 50 W  
See next page for circuit information  
Data Sheet  
6 of 12  
Rev. 03, 2006-07-17  
PTFA240451E  
PTFA240451F  
Reference Circuit  
C1  
0.001µF  
R1  
1.3K  
R2  
1.2KΩ  
QQ1  
LM7805  
VDD  
Q1  
BCP56  
C2  
C3  
0.001µF  
0.001µF  
R3  
2KΩ  
R4  
2KΩ  
R5  
5.1KΩ  
R6  
10Ω  
L1  
VDD  
C4  
10 µF  
35V  
C5  
.1µF  
R7  
C6  
.1µF  
C7  
C8  
C11  
4.5pF  
C12  
1µF  
C13  
.1µF  
C14  
10µF  
50V  
5.1KΩ  
.01µF 4.5pF  
l4  
R8  
10Ω  
l8  
l9  
C9  
4.5pF  
C20  
4.5pF  
DUT  
RF_IN  
l1  
l2  
l3  
l5  
l6  
l7  
l10  
l11  
l12  
l13  
l14  
RF_OUT  
C10  
1.8pF  
C19  
1.2pF  
L2  
C15  
4.5pF  
C16  
1µF  
C17  
.1µF  
C18  
10µF  
50V  
Reference circuit schematic for ƒ = 2480 MHz  
Circuit Assembly Information  
DUT  
PCB  
PTFA240451E or PTFA240451F  
0.76 mm [.030"] thick, e = 4.5  
LDMOS Transistor  
Rogers TMM4  
2 oz. copper  
r
Microstrip  
Electrical Characteristics at 2480 MHz1  
Dimensions: L xW (mm) Dimensions: L xW (in.)  
l1  
l2  
l3  
l4  
l5  
l6  
l7  
0.102 l , 50.0 W  
0.050 l , 44.0 W  
0.094 l , 44.0 W  
0.148 l , 64.0 W  
0.016 l , 44.0 W  
0.021 l , 14.7 W  
0.080 l , 8.2 W  
6.68 x 1.40  
3.12 x 1.78  
6.10 x 1.78  
9.86 x 0.89  
1.04 x 1.78  
1.35 x 7.62  
4.78 x 14.86  
19.30 x 1.40  
2.84 x 19.05  
5.16 x 19.05 / 1.40  
2.95 x 1.40  
7.62 x 1.40  
3.81 x 1.40  
0.263 x 0.055  
0.123 x 0.070  
0.240 x 0.070  
0.388 x 0.035  
0.041 x 0.070  
0.053 x 0.300  
0.188 x 0.585  
0.760 x 0.055  
0.112 x 0.750  
0.203 x 0.750 / 0.055  
0.116 x 0.055  
0.300 x 0.055  
0.150 x 0.055  
l8, l9  
l10  
l11 (taper)  
l12  
l13  
0.295 l , 50.0 W  
0.049 l , 6.5 W  
0.079 l , 6.5 W / 50.0 W  
0.045 l , 50.0 W  
0.117 l , 50.0 W  
0.058 l , 50.0 W  
l14  
1
Electrical characteristics are rounded.  
Data Sheet  
7 of 12  
Rev. 03, 2006-07-17  
PTFA240451E  
PTFA240451F  
Reference Circuit (cont.)  
R5 C5  
R3C3  
R1  
C1  
C11 C12  
VDD  
QQ1  
C2  
R4  
C4  
LM  
Q1  
10  
+
35V  
R2  
R6  
R7  
C7  
C14  
VDD  
VDD  
C6  
C13  
C8  
R8  
C20  
C17  
C9  
C19  
C10  
C18  
C16  
C15  
A240451in_01  
A240451out_01  
Reference circuit assembly diagram* (not to scale)  
Component  
Description  
Suggested Manufacturer P/N or Comment  
C1, C2, C3  
Capacitor, 0.001 µF  
Digi-Key  
Digi-Key  
Digi-Key  
ATC  
PCC1772CT-ND  
PCS6106TR-ND  
PCC104BCT-ND  
200B 103  
C4  
Tantalum capacitor, 10 µF, 35 V  
Capacitor, 0.1 µF  
C5, C6, C13, C17  
C7  
Ceramic capacitor, 0.01 µF  
Ceramic capacitor, 4.5 pF  
C8, C9, C11, C15,  
C20  
ATC  
100B 4R5  
C10  
Ceramic capacitor, 1.8 pF  
Capacitor, 1 µF  
ATC  
100B 1R8  
C12, C16  
C14, C18  
C19  
ATC  
920C105KW  
TPSE106K050R0400  
100B 1R2  
Tantalum capacitor, 10 µF, 50 V  
Ceramic capacitor, 1.2 pF  
Ferrite  
Garrett Electronics  
ATC  
L1, L2  
Q1  
Philips  
BDS46/3.8.8-452  
BCP56  
Transistor  
Infineon  
QQ1  
Voltage regulator  
National Semiconductor  
Digi-Key  
Digi-Key  
Digi-Key  
Digi-Key  
Digi-Key  
Digi-Key  
LM7805  
R1  
Chip resistor, 1.3 k-ohms  
Chip resistor, 1.2 k-ohms  
Chip resistor, 2 k-ohms  
Potentiometer, 2 k-ohms  
Chip resistor, 5.1 k-ohms  
Chip resistor, 10 ohms  
P1.3KGCT-ND  
P1.2KGCT-ND  
P2.0KECT-ND  
3224W-202ETR-ND  
P5.1KECT-ND  
P10ECT-ND  
R2  
R3  
R4  
R5, R7  
R6, R8  
*Gerber Files for this circuit available on request  
Data Sheet  
8 of 12  
Rev. 03, 2006-07-17  
PTFA240451E  
PTFA240451F  
Package Outline Specifications  
Package H-30265-2  
7.11  
[.280]  
(45° X 2.03  
[.080])  
C
L
D
2X 2.59±0.38  
[.107 ±.015]  
S
LID 10.16±0.25  
[.400±.010]  
C
FLANGE 9.78  
L
15.60±0.51  
[.614±.020]  
[.385]  
G
4x 1.52  
[.060]  
2X R1.60  
[.063]  
2x 7.11  
[.280]  
15.23  
[.600]  
SPH 1.57  
[.062]  
10.16±0.25  
[.400±.010]  
3.48±0.38  
[.137±.015]  
0.0381 [.0015] -A-  
20.31  
[.800]  
1.02  
[.040]  
H-30265-2-1-2303  
Diagram Notes:  
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].  
2. All tolerances ± 0.127 [.005] unless specified otherwise.  
3. Pins: D = drain, S = source, G = gate.  
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
5. Primary dimensions are mm. Alternate dimensions are inches.  
6. Gold plating thickness:  
S - flange: 2.54 micron [100 microinch] (min)  
D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch]  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/products  
Data Sheet  
9 of 12  
Rev. 03, 2006-07-17  
PTFA240451E  
PTFA240451F  
Package Outline Specifications (cont.)  
Package H-31265-2  
(45° X 2.03  
[.080])  
C
L
2X 2.59±0.51  
[.102±.020]  
D
G
LID 10.16±0.25  
[.400±.010]  
15.49±.51  
[.610±.020]  
C
10.16  
[.400]  
L
FLANGE 10.16  
[.400]  
4X R0.63  
[R.025] MAX  
R1.27  
[R.050]  
2X 7.11  
[.280]  
10.16±0.25  
[.400±.010]  
SPH 1.57  
[.062]  
|0.025[.001]|-A-  
h- 31265-2_265-case  
3.56±.38  
[.140±.015]  
1.02  
[.040]  
10.16  
[.400]  
S
Diagram Notes:  
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].  
2. All tolerances ± 0.127 [.005] unless specified otherwise.  
3. Pins: D = drain, S = source, G = gate.  
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
5. Primary dimensions are mm. Alternate dimensions are inches.  
6. Gold plating thickness:  
S - flange: 2.54 micron [100 microinch] (min)  
D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch]  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/products  
Data Sheet  
10 of 12  
Rev. 03, 2006-07-17  
PTFA240451EF  
Confidential, Limited Internal Distribution  
Revision History:  
2006-07-17  
Data Sheet  
Previous Version:  
2005-08-22, Data Sheet  
Page  
Subjects (major changes since last revision)  
Add graphs for WiMAX characterization.  
5
1 – 2, 9 – 10  
Update package numbers, no change to outline.  
Notes:  
Data Sheet  
11 of 12  
Rev. 03, 2006-07-17  
PTFA240451E  
PTFA240451F  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
highpowerRF@infineon.com  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
®
GOLDMOS is a registered trademark of Infineon Technologies AG.  
Edition 2006-07-17  
Published by  
InfineonTechnologies AG  
81726 München, Germany  
© InfineonTechnologies AG 2005.  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics  
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or  
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties  
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any  
third party.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon  
Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in question  
please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of  
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support  
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are  
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it  
is reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
12 of 12  
Rev. 03, 2006-07-17  

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PTFA260851EV1

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
INFINEON

PTFA260851F

Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz
INFINEON

PTFA261301E

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
INFINEON

PTFA261301EV1

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-30260-2, 2 PIN
INFINEON

PTFA261301F

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
INFINEON

PTFA261702E

Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz
INFINEON