PTFB211503EL_技术文档

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs

150 W, 2110 – 2170 MHz

Description

The PTFB211503EL and PTFB211503FL are thermally-enhanced,

150-watt, LDMOS FETs designed for cellular power amplifier

applications in the 2110 to 2170 frequency band. Features

include I/O matching, high gain, and thermally-enhanced ceramic

open-cavitypackageswithslottedandearlessﬂanges.Manufacturedwith

Inﬁneon's advanced LDMOS process, these devices provide excellent

thermal performance and superior reliability.

PTFB211503EL

H-33288-6

PTFB211503FL

H-34288-4/2

Features

Two-carrier WCDMA 3GPP Drive-up

V_DD= 30 V, I_DQ= 1.20 A, ƒ = 2170 MHz, 3GPP

WCDMA, PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz

•

Broadband internal matching

Enhanced for use in DPD error correction systems

Typical two-carrier WCDMA performance at 2170

MHz, 30 V

-20

-25

-30

-35

-40

-45

-50

-55

-60

40

35

30

25

20

15

10

5

- Average output power = 32 W

- Linear Gain = 18 dB

- Efﬁciency = 29%

- Intermodulation distortion = –34 dBc

- Adjacent channel power = –37 dBc

Efficiency

•

Typical CW performance, 2170 MHz, 30 V

- Output power at P

- Efﬁciency = 55%

IMD Up

ACPR

IMD Low

= 150 W

1dB

Increased negative gate-source voltage range

for improved performance in Doherty peaking

ampliﬁers

0

31 33 35 37 39 41 43 45 47 49

Output Power (dBm)

•

Integrated ESD protection

Capable of handling 10:1 VSWR @ 30 V, 150 W

(CW) output power

•

Pb-Free and RoHS compliant

RF Characteristics

Two-carrier WCDMA Measurements (not subject to production test—veriﬁed by design/characterization in Inﬁneon test ﬁxture)

= 30 V, I = 1.2 A, P = 32 W AVG, ƒ = 2135 MHz, ƒ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

V

DD

DQ

OUT

1

2

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Symbol

Min

—

Typ

18

Max

—

Unit

dB

Gain

G

ps

Drain Efﬁciency

Adjacent Channel Power Ratio

hD

—

29

—

%

ACPR

—

–36

—

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

RF Characteristics (cont.)

Two-tone Measurement (tested in Inﬁneon test ﬁxture)

V

DD

= 30 V, I

= 1.2 A, P = 150 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz

OUT

DQ

Characteristic

Gain

Symbol

Min

16.5

39

Typ

18

Max

—

Unit

dB

Gps

hD

Drain Efﬁciency

40

—

%

Intermodulation Distortion

IMD

—

–30

–28

dBc

DC Characteristics

Characteristic

Conditions

Symbol

Min

65

—

Typ

—

Max

—

Unit

V

Drain-Source Breakdown Voltage

Drain Leakage Current

V

GS

V

DS

V

DS

V

GS

V

DS

V

GS

= 0 V, I = 10 µA

V

(BR)DSS

DS

= 28 V, V

= 63 V, V

= 0 V

I

—

1.0

10.0

—

µA

W

GS

DSS

—

On-State Resistance

Operating Gate Voltage

Gate Leakage Current

= 10 V, V = 0.1 V

R

—

0.08

2.1

—

DS

DS(on)

= 30 V, I

= 1.2 A

V

1.6

—

3.0

1.0

V

DQ

GS

= 10 V, V = 0 V

I

µA

DS

GSS

Maximum Ratings

Parameter

Symbol

Value

65

Unit

V

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Storage Temperature Range

V

DSS

V

–6 to +10

200

V

GS

T

°C

J

T

STG

–40 to +150

0.27

°C

Thermal Resistance (T

= 70°C, 150 W CW)

R

qJC

°C/W

CASE

Ordering Information

Type and Version

PTFB211503EL V1

Package Outline

H-33288-6

Package Description

Shipping

Slotted ﬂange, single-ended

Earless ﬂange, single-ended

Tray

PTFB211503EL V1 R250

PTFB211503FL V2

H-33288-6

Tape & Reel 250 pcs

Tray

H-34288-4/2

PTFB211503FL V2 R250

Tape & Reel 250 pcs

Data Sheet

2 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Typical Performance (data taken in a production test ﬁxture)

Two-carrier WCDMA 3GPP

Two-carrier WCDMA 3GPP Drive-up

V_DD= 30 V, I_DQ= 1.20 A, 3GPP WCDMA,

PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz

V_DD= 30 V, I_DQ= 1.20 A, ƒ = 2170 MHz, 3GPP

WCDMA, PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84MHz

-25

19

18

17

16

15

40

30

20

10

0

2170Low

-30

2170Up

Gain

2140Low

-35

-40

-45

-50

-55

2140Up

2110Low

2110Up

Efficiency

31 33 35 37 39 41 43 45 47 49

Output Power (dBm)

31 33 35 37 39 41 43 45 47 49

Output Power (dBm)

Single-carrier WCDMA Drive-Up

V_DD= 30 V, I_DQ= 1.20 A, ƒ = 2170 MHz

3GPP WCDMA, PAR = 8 dB, BW 3.84 MHz

Single-carrier WCDMA, 3GPP Broadband

V_DD= 30 V, I_DQ= 1.20 A, P_OUT= 40 W

-20

-25

-30

-35

-40

-45

-50

-55

-60

40

35

30

25

20

15

10

5

60

50

40

30

20

10

0

-10

IRL

Efficiency

-20

-30

-40

-50

Gain

ACP

Efficiency

ACP Up

ACP Low

0

31 33 35 37 39 41 43 45 47 49

Output Power (dBm)

2080

2100

2120

2140

2160

2180

2200

Frequency (MHz)

Data Sheet

3 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Typical Performance (cont.)

Two-tone Drive-up

V_DD= 30 V, I_DQ= 1.20 A,

ƒ₁= 2170 MHz, ƒ₂= 2169 MHz

V_DD= 30 V, I_DQ= 1.20 A,

ƒ₁= 2170 MHz, ƒ₂= 2169 MHz

20

19

50

40

30

20

10

0

-15

-25

-35

-45

-55

-65

50

40

30

20

10

0

Efficiency

Gain

18

17

IMD3

Efficiency

16

15

40

42

44

46

48

50

52

54

40

42

44

46

48

50

52

54

Output Power, PEP (dBm)

Two-tone Drive-up at

Selected Frequencies

V_DD= 30 V, I_DQ= 1.20 A, tone spacing = 1 MHz

Two-tone Broadband Performance

V_DD= 30 V, I_DQ= 1.20 A, P_OUT= 63 W

60

55

50

45

40

35

30

25

20

15

-5

-20

-30

-40

-50

-60

-70

2170MHz

2140MHz

2110MHz

-10

-15

-20

-25

-30

-35

-40

-45

-50

IRL

Efficiency

IMD3

Gain

2070 2090 2110 2130 2150 2170 2190 2210

Frequency (MHz)

41

43

45

47

49

51

53

Output Power, PEP (dBm)

Data Sheet

4 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Typical Performance (cont.)

CW Performance

Gain vs. Output Power

V_DD= 30 V, ƒ = 2170 MHz

Power Sweep, CW

Gain & Efficiency vs. Output Power

V_DD= 30 V, I_DQ= 1.20 A, ƒ = 2170 MHz

19

18

17

16

15

14

60

50

40

30

20

10

I_DQ= 1.40 A

18

17

Gain

I_DQ= 1.20 A

I_DQ= 0.80 A

16

15

+25ºC

+85ºC

Efficiency

–10ºC

41

43

45

47

49

51

53

42

44

46

48

50

52

Output Power (dBm)

Intermodulation Distortion

vs. Output Power

V_DD= 30 V, I_DQ= 1.20 A,

ƒ₁= 2170 MHz, ƒ₂= 2169 MHz

-20

-30

-40

-50

-60

-70

3rd Order

5th

7th

40

45

50

55

Output Power, PEP (dBm)

Data Sheet

5 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Broadband Circuit Impedance

Z = 50 W

0

D

Z Source

Z Load

G

S

Z Load

Z Source

Frequency

MHz

Z Source W

Z Load W

2200 MHz

R

jX

R

jX

2080 MHz

2200

2.06

2.17

2.30

2.43

2.58

–6.08

–6.33

–6.59

–6.86

–7.14

2.19

2.20

2.21

2.22

–4.73

–4.82

–4.91

–5.00

–5.09

2170

2140

2110

2080

See next page for reference circuit information

Data Sheet

6 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Reference Circuit

C801

1000 pF

S1

8

4

1

In

Out

NC

6

NC

2

C802

1000 pF

5

7

3

R801

C803

1000 pF

R804

2

C

1200 Ohm

100 Ohm

R805

10 Ohm

4

S

1

TL114

S2

B

3

E

R802

1300 Ohm

S3

3

TL118

TL138

R101

10 Ohm

R803

10 Ohm

TL128

TL110

TL124

TL129

TL109

TL120

2

1

3

1

2

3

TL121

TL119

TL115

C106

2.2 pF

C101

10 pF

TL130

TL127

C103

2

TL106

TL125

TL112

TL111

TL105

TL134 TL135

TL132

TL104

TL131

TL102

TL113

GATE DUT

(Pin G)

3

1

RF_IN

4

C107

8.2 pF

TL133

4710000 pF

2

1

3

TL137

TL116

TL136

TL140

C105

0.6 pF

C104

4710000 pF

2

1

3

C102

10 pF

TL103

TL108

TL122

TL117

TL107

R104

10 Ohm

TL126

TL123

TL101

TL139

3

2

1

b

2 1 1 5 0 3 e f l _ b d i n _ 0 8 - 1 9 - 2 0 1 0

Reference circuit input schematic for ƒ = 2170 MHz

C204

10000000 pF

TL218

TL220

TL214

TL221

TL217

C203

TL223

C202

TL222

TL215

TL219

1 2

3

1

2

1

2

1

2

3

V^DD

C201

2200000 pF

DUT

(Pin V)

1000000 pF

TL201

10000000 pF

C207

8.2 pF

TL212

TL210

TL211

TL202

TL206

TL205 TL207

TL209

TL208

TL203

TL204

TL229

DRAIN DUT

(Pin D)

1

2

RF_OUT

3

C208

0.5 pF

C210

2200000 pF

C206

1000000 pF

C209

10000000

DUT

(Pin V)

TL226

TL228

TL231

TL216

2 1 1 5 0 3 e f l _ b d o u t _ 0 8 - 1 9 - 2 0 1 0

TL225

TL224

TL213

TL227

2

3

2

1

2

1

2

1

b

3

VDD

TL230

C205

10000000 pF

Reference circuit output schematic for ƒ = 2170 MHz

Data Sheet

7 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Reference Circuit (cont.)

Description

DUT

PTFB211503EL or PTFB211503FL

PCB

0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper

Electrical Characteristics at 2170 MHz

Transmission

Electrical

Dimensions: mm

Dimensions: mils

Line

Characteristics

Input

TL101, TL129

TL102

0.095 λ, 54.17 W

0.016 λ, 31.24 W

0.026 λ, 54.17 W

0.032 λ, 47.12 W

0.005 λ, 6.67 W

W = 1.016, L = 8.001

W = 2.286, L = 1.270

W = 1.016, L = 2.159

W = 1.270, L = 2.692

W = 13.970, L = 0.381

W = 40, L = 315

W = 90, L = 50

W = 40, L = 85

W = 50, L = 106

W = 550, L = 15

TL103

TL104

TL105

TL106

W1 = 13.970, W2 = 1.016, W3 = 13.970,

W4 = 1.016

W1 = 550, W2 = 40, W3 = 550,

W4 = 40

TL107, TL108, TL109

TL110, TL139

TL111 (taper)

TL112

W = 1.016

W = 40

0.012 λ, 54.17 W

W1 = 1.016, W2 = 1.016, W3 = 1.016

W1 = 13.970, W2 = 10.922, L = 0.483

W1 = 17.780, W2 = 12.700

W1 = 1.270, W2 = 2.286

W = 1.981, L = 2.540

W = 0.762, L = 2.286

W = .762, L = 8.136

W1 = 40, W2 = 40, W3 = 40

W1 = 550, W2 = 430, L = 19

W1 = 700, W2 = 500

W1 = 50, W2 = 90

W = 78, L = 100

W = 30, L = 90

0.006 λ, 6.67 W / 8.37 W

TL113

TL114

0.031 λ, 34.72 W

0.027 λ, 63.89 W

0.096 λ, 63.89 W

0.029 λ, 54.17 W

0.018 λ, 54.17 W

0.021 λ, 54.17 W

0.026 λ, 54.17 W

0.002 λ, 54.17 W

0.030 λ, 54.17 W

0.053 λ, 6.67 W

0.012 λ, 54.17 W

0.134 λ, 47.12 W

0.012 λ, 54.17 W

0.000 λ, 144.35 W

TL115

TL116

W = 30, L = 320

W = 40, L = 97

TL117

W = 1.016, L = 2.451

W = 1.016, L = 1.524

W = 1.016, L = 1.727

W = 1.016, L = 2.159

W = 1.016, L = 0.127

W = 1.016, L = 2.540

W = 13.970, L = 4.064

W = 1.016, L = 1.021

W = 1.270, L = 11.151

W = 1.016, L = 1.016

W = 0.025, L = 0.025

TL118

W = 40, L = 60

TL119

W = 40, L = 68

TL120

W = 40, L = 85

TL121, TL122

TL123, TL124

TL125

W = 40, L = 5

W = 40, L = 100

W = 550, L = 160

W = 40, L = 40

TL126

TL127

W = 50, L = 439

W = 40, L = 40

TL128

TL130, TL133

TL131

W = 1, L = 1

W1 = 10.922, W2 = 0.025, W3 = 10.922

W1 = 430, W2 = 1, W3 = 430,

W4 = 0.025

W4 = 1

TL132, TL135

TL134 (taper)

TL136, TL137

TL138

0.000 λ, 8.37 W

W = 10.922, L = 0.000

W = 430, L = 0

0.033 λ, 8.37 W / 47.12 W

0.012 λ, 63.89 W

0.012 λ, 54.17 W

0.021 λ, 63.89 W

W1 = 10.922, W2 = 1.270, L = 2.540

W1 = 0.762, W2 = 0.762, W3 = 1.016

W1 = 1.016, W2 = 1.270, W3 = 1.016

W = 0.762, L = 1.778

W1 = 430, W2 = 50, L = 100

W1 = 30, W2 = 30, W3 = 40

W1 = 40, W2 = 50, W3 = 40

W = 30, L = 70

TL140

table continued on page 9

Data Sheet

8 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Reference Circuit (cont.)

Electrical Characteristics at 2170 MHz

Transmission

Electrical

Dimensions: mm

Dimensions: mils

Line

Characteristics

Output

TL201 (taper)

TL202 (taper)

TL203

0.074 λ, 5.33 W / 39.51 W

0.010 λ, 4.84 W / 5.33 W

W1 = 17.780, W2 = 1.651, L = 5.613

W1 = 19.685, W2 = 17.780, L = 0.787

W1 = 12.700, W2 = 17.780

W1 = 1.651, W2 = 2.540

W1 = 1.270, W2 = 2.540

W = 17.780, L = 0.025

W1 = 700, W2 = 65, L = 221

W1 = 775, W2 = 700, L = 31

W1 = 500, W2 = 700

W1 = 65, W2 = 100

W1 = 50, W2 = 100

W = 700, L = 1

TL204

TL205

TL206

0.000 λ, 5.33 W

0.047 λ, 47.12 W

0.021 λ, 39.51 W

0.057 λ, 4.84 W

0.016 λ, 28.85 W

0.035 λ, 39.51 W

0.032 λ, 16.90 W

0.032 λ, 17.05 W

0.032 λ, 25.04 W

0.095 λ, 25.04 W

TL207

W = 1.270, L = 3.886

W = 50, L = 153

TL208

W = 1.651, L = 1.753

W = 65, L = 69

TL209

W = 19.685, L = 4.318

W = 775, L = 170

TL210, TL211

TL212

W = 2.540, L = 1.270

W = 100, L = 50

W = 1.651, L = 2.896

W = 65, L = 114

TL213

W = 4.928, L = 2.540

W = 194, L = 100

TL214

W = 4.877, L = 2.540

W = 192, L = 100

TL215, TL231

TL216, TL217

TL218, TL230

TL219, TL225

TL220, TL221

TL222, TL224

TL223, TL226

TL227, TL228

TL229

W1 = 3.048, W2 = 3.048, W3 = 2.540

W = 3.048, L = 7.645

W1 = 120, W2 = 120, W3 = 100

W = 120, L = 301

W = 3.048

W = 120

0.054 λ, 25.04 W

0.029 λ, 25.04 W

0.067 λ, 25.04 W

0.010 λ, 25.04 W

0.029 λ, 25.04 W

0.022 λ, 39.51 W

W1 = 3.048, W2 = 3.048, W3 = 4.318

W1 = 3.048, W2 = 3.048, W3 = 2.286

W = 3.048, L = 5.359

W1 = 120, W2 = 120, W3 = 170

W1 = 120, W2 = 120, W3 = 90

W = 120, L = 211

W = 3.048, L = 0.762

W = 120, L = 30

W1 = 3.048, W2 = 3.048, W3 = 2.286

W1 = 1.651, W2 = 1.651, W3 = 1.778

W1 = 120, W2 = 120, W3 =90

W1 = 65, W2 = 65, W3 = 70

Data Sheet

9 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Reference Circuit (cont.)

Circuit Assembly Information

Test Fixture Part No.

LTN/PTFB211503EF

Find Gerber ﬁles for this test ﬁxture on the Inﬁneon Web site at http://www.inﬁneon.com/rfpower

RO4350, .030

(60)

RO4350, .030

(60)

VDD

C204

C802

R804 C801

R801

S3

VDD

C803

R802

C201

10 µF

R805

S2

C202

S1

R803

C203

R101

C103

C101

C106

C107

RF_OUT

RF_IN

C207

C208

C104

C102

C105

R104

C209

C210

C206

F µ 0 1

VDD

C205

PTFB211503_OUT_02

PTFB211503_IN_02

b

2 1 1 5 0 3 e f l _ C D _ 1 1 - 1 0 - 2 0 1 0

Reference circuit assembly diagram (not to scale)

Data Sheet

10 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Reference Circuit (cont.)

Component Information

Component

Description

Suggested Manufacturer

P/N

Input

C101, C102

Chip capacitor, 10 pF

Chip capacitor, 4.71 μF

Chip capacitor, 0.6 pF

Chip capacitor, 2.2 pF

Chip capacitor, 8.2 pF

Capacitor, 1000 pF

Resistor, 10 W

ATC

ATC100A100FW150XB

493-2372-2-ND

C103, C104

Digi-Key

ATC

C105

ATC100B0R6BW500XB

ATC100B2R2BW500XB

ATC100B8R2BW500XB

PCC1772CT-ND

P10ECT-ND

C106

ATC

C107

ATC

C801, C802, C803

Digi-Key

R101, R104, R803, R805

R801

R802

R804

S1

Resistor, 1200 W

P1.2KGCT-ND

Resistor, 1300 W

P1.3KGCT-ND

Resistor, 100 W

P100ECT-ND

Voltage Regulator

Transistor

LM78L05ACM-LD

BCP5616TA-ND

S2

S3

Potentiometer, 2k W

3224W-202ECT-ND

Output

C201, C206

C202, C210

C203, C209

C204, C205

C207

Chip capacitor, 1 μF

Chip capacitor, 2.2 μF

Capacitor, 10 μF

Digi-Key

ATC

445-1411-2-ND

445-1447-2-ND

281M5002106K

Capacitor, 10 μF

587-1818-2-ND

Chip capacitor, 8.2 pF

Chip capacitor, 0.5 pF

ATC100B8R2BW500XB

ATC100B0R5BW500XB

C208

ATC

Data Sheet

11 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Package Outline Speciﬁcations

Package H-33288-6

2X 5.080

45° X 2.032

[45° X .080]

[.200] (2 PLS)

4X 1.143

[.045] (4 PLS)

4X 30°

4X R1.524

[R.060]

4.889±.510

[.192±.020]

V

D

V

S

9.779

[.385]

9.398

[.370]

C

L

19.558±.510

[.770±.020]

2X R1.626

[R.064]

G

E

F

H

3- 3288 - 6_ po _02 -18 - 2010

C

L

2X 12.700

[.500]

2X 22.860

[.900]

27.940

[1.100]

+.254

4.039

–.127

22.352±.200

[.880±.008]

+.010

–.005

[

]

.159

1.575

[.062] (SPH)

C

L

34.036

[1.340]

1.016

[.040]

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances ± 0.127 [.005] unless speciﬁed otherwise.

4. Pins: A = gate, B = source, C = drain, D = V , E, F = N.C.

DD

5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].

6. Gold plating thickness: 0.25 micron [10 microinch] max.

Data Sheet

12 of 14

Rev. 04, 2011-03-07

PTFB211503EL

PTFB211503FL

Confidential, Limited Internal Distribution

Package Outline Speciﬁcations (cont.)

Package H-34288-4/2

22.860

[.900]

45° X 2.032

[45° X .080]

2X 5.080

[.200]

2X 1.143

[.045]

C

L

2X 30°

V

D

G

4.889±.510

[.192±.020]

9.779

[.385]

9.398

[.370]

C

L

19.558±.510

[.770±.020]

+.381

4X R0.508

-.127

+.015

R.020

[

-.005

]

2X 12.700

[.500]

+.254

4.039

-.127

22.352±.200

[.880±.008]

+.010

.159

[

]

-.005

C

66065-A0003- C743- 01-0027 H- 34288- 4_2 .dwg

1.575

[.062] (SPH)

C

L

1.016

[.040]

23.114

[.910]

S

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances ± 0.127 [.005] unless speciﬁed otherwise.

4. Pins: D = drain; S = source; G = gate; V = V

.

DD

5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].

6. Gold plating thickness: 0.25 micron [10 microinch] max.

Find the latest and most complete information about products and packaging at the Inﬁneon Internet page

http://www.inﬁneon.com/rfpower

Data Sheet

13 of 14

Rev. 04, 2011-03-07

PTFB211503EL V1 / PTFB211503FL V2

Conﬁdential, Limited Internal Distribution

Revision History:

2011-03-07

Data Sheet

Previous Version:

2010-11-10, Data Sheet

Page

Subjects (major changes since last revision)

Updated features

1

2

Corrected typo

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

highpowerRF@inﬁneon.com

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2011-03-07

Published by

Inﬁneon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.inﬁneon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of

Inﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended

to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet

14 of 14

Rev. 04, 2011-03-07


型号：	PTFB211503EL
厂家：	Infineon
描述：	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz 热增强型高功率射频LDMOS FET的150 W， 2110年至2170年兆赫射频
文件：	总14页 (文件大小：614K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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