PVD1352N [INFINEON]
HEXFET㈢ Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-100V DC, 550mA; HEXFET㈢功率MOSFET光伏继电器单极，常开0-100V直流， 550毫安
| 型号： | PVD1352N |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-100V DC, 550mA |
| 文件： | 总6页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD10052-D
Series PVD13N
Microelectronic Power IC
HEXFET Power MOSFET Photovoltaic Relay
Single-Pole, Normally-Open
®
0-100V DC, 550mA
General Description
Features
The PVD13 Series DC Relay (PVD) is a single-pole,
normally open, solid-state replacement for
electromechanical relays used for general purpose
switching of analog signals. It utilizes International
Rectifier’s HEXFET power MOSFET as the output
switch, driven by an integrated circuit photovoltaic
generator of novel construction. The output switch is
controlled by radiation from a GaAlAs light emitting
diode (LED), which is optically isolated from the
photovoltaic generator.
The PVD13 Series overcomes the limitations of both
conventional electromechanical and reed relays by
offering the solid state advantages of long life, fast
operating speed, low pick up power, bounce-free
operation, low thermal offset voltages and miniature
package. These advantages allow product
improvement and design innovations in many
applications such as process control, multiplexing,
automatic test equipment and data acquisition.
The PVD13 can switch analog signals from
thermocouple level to 100 Volts peak DC. Signal
frequencies into the RF range are easily controlled
and switching rates up to 450Hz are achievable. The
extremely small thermally generated offset voltages
allow increased measurement accuracies.
§
§
§
§
§
§
§
§
Bounce-Free Operation
1010 Off-State Resistance
1,000 V/µsec dv/dt
5 mA Input Sensitivity
4,000 VRMS I/O Isolation
Solid-State Reliability
UL Recognized
ESD Tolerance:
4000V Human Body Model
500V Machine Model
These relays are packaged in 8-pin, molded DIP
packages and available with either thru-hole or
surface-mount (“gull-wing”) leads, in plastic shipping
tubes.
Part Identification
Applications
PVD1352N
PVD1354N
§
§
§
§
Process Control
Data Acquisition
Test Equipment
Multiplexing and Scanning
thru-hole
surface-mount
(gull-wing)
PVD1352NS
PVD1354NS
(HEXFET is the registered trademark for International Rectifier Power MOSFETs)
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1
Series PVD13N
Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)
INPUT CHARACTERISTICS
PVD1352N
PVD1354N
Units
Minimum Control Current (see figures 1 and 2)
DC
For 500mA Continuous Load Current
For 550mA Continuous Load Current
For 350mA Continuous Load Current
2
5
5
mA@25°C
mA@40°C
mA@85°C
Maximum Control Current for Off-State Resistance at 25°C
Control Current Range (Caution: current limit input LED. See figure 6)
Maximum Reverse Voltage
10
µA(DC)
mA(DC)
V(DC)
2.0 to 25
7.0
OUTPUT CHARACTERISTICS
Operating Voltage Range
PVD1352N
PVD1354N
Units
0 to + 100
550
V(PEAK)
Maxiumum Load Current 40°C I LED 5mA
Response Time @25°C (see figures 7 and 8)
mA(DC)
Max. T
Max. T
@ 12mA Control, 50 mA Load, 100 VDC
@ 12mA Control, 50 mA Load, 100 VDC
150
125
1.5
µs
(on)
µs
(off)
Max. On-state Resistance 25°C (Pulsed) (fig. 4) 200 mA Load, 5mA Control
Min. Off-state Resistance 25°C @ 80 VDC (see figure 5)
Max. Thermal Offset Voltage @ 5.0mA Control
Min. Off-State dv/dt
Ω
Ω
108
1010
0.2
1000
20
µvolts
V/µs
Typical Output Capacitance
pF @ 50VDC
GENERAL CHARACTERISTICS
(PVD1352N and PVD1354N)
Units
VRMS
Ω
Dielectric Strength: Input-Output
4000
1012 @ 25°C - 50% RH
1.0
Insulation Resistance: Input-Output @ 90VDC
Maximum Capacitance: Input-Output
pF
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.)
+260
Ambient Temperature Range:
Operating
Storage
-40 to +85
-40 to +100
°C
International Rectifier does not recommend the use of this product in aerospace, avionics, military or life support applications.
Users of this International Rectifier product in such applications assume all risks of such use and indemnify International
Rectifier against all damages resulting from such use.
2
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Series PVD13N
800
700
600
500
400
300
200
100
0
I
LE D>5mA
ILED=2mA
0
20
40
60
80
100
Ambient Temperature (°C)
I
(mA)
LED
Figure 1. Current Derating Curves
Figure 2.Typical Control Current Requirements
1000
900
800
700
600
500
400
300
200
100
0
P ulsed, 25ºC
5 mA Control
25ºC
40ºC
60ºC
l
= 100 mA
D
8 5ºC
I
= 5mA, Forced Air
LED
0.0
0.5
1.0
1.5
2.0
Ambient Temperature (°C)
Figure 4.Typical Normalized On-Resistance
V
(Volts)
DD
Figure 3.Typical On Characteristics
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3
Series PVD13N
Ambient Temperature (°C)
Figure 5.Typical Normalized Off-State Leakage
LED Forward Voltage Drop (Volts DC)
Figure 6. Input Characteristics
(Current Controlled)
1000
Ton
Tdly
100
Toff
10
0
5
10
15
20
I LED (mA)
Figure 7.Typical Delay Times
Figure 8. Delay Time Definitions
4
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Series PVD13N
200
180
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
Ambient Temperature °C
V
DS
Drain to Source Voltage
Figure 9.Typical ControlThreshold andTransfer Ratio
Figure 10.Typical Output Capacitance
Wiring Diagram
www.irf.com
5
Series PVD13N
Case Outlines
01-2013 00 (MS-001AB)
01-2019 00
12/11/2003
6
www.irf.com
相关型号：
PVD1352NS
HEXFET㈢ Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-100V DC, 550mA
INFINEON
PVD1354N
HEXFET㈢ Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-100V DC, 550mA
INFINEON
PVD1354NS
HEXFET㈢ Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-100V DC, 550mA
INFINEON
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