PVDZ172NS [INFINEON]
Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V DC, 1.5A; 微电子电源IC HEXFET功率MOSFET光伏继电器单刀常开0-60V DC , 1.5A型号: | PVDZ172NS |
厂家: | Infineon |
描述: | Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V DC, 1.5A |
文件: | 总5页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet No. PD 10039 revG
PVDZ172N & PbF
Microelectronic Power IC
HEXFET® Power MOSFET Photovoltaic Relay
Single Pole, Normally Open
0-60V DC, 1.5A
Features
General Description
The PVDZ172N Photovoltaic Relay is a single-pole,
normally open solid state relay that can replace elec-
tromechanical relays used for general purpose switch-
ing of DC loads. It utilizes International Rectifier’s HEX-
FET power MOSFET as the output switch, driven by
an integrated circuit photovoltaic generator of novel con-
struction. The output switch is controlled by radiation
from a GaAlAs light emitting diode (LED) which is opti-
cally isolated from the photovoltaic generator.
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250mΩ On-Resistance
Bounce-Free Operation
1.5 Amp capacity
4,000 VRMS I/O Isolation
Solid-State Reliability
UL recognized; pending for lead-free
part numbers (PbF)
These units overcome the limitations of both electro-
mechanical and reed relays by offering the solid-state
advantages of high sensitivity, miniaturization, no con-
tact bounce, long operational life, insensitivity to exter-
nal magnetic fields, shock and vibration, and high reli-
ability inherent with solid state technology. They are
ideally suited for switching high currents or low level
signals without distortion or injection of electrical noise.
!
ESD Tolerance:
4000V Human Body Model
500V Machine Model
These relays are packaged in 8-pin, molded DIP pack-
ages and available with thru-hole and surface-mount
(gull-wing) leads, in plastic shipping tubes.
Applications
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Portable Electronics
Programmable Logic Controllers
Computers and Peripheral Devices
Audio Equipment
Part Identification
PVDZ172N & PbF
PVDZ172NS & PbF
thru-hole
surface-mount
(gull-wing)
Power Supplies and Power Distribution
Instrumentation
(HEXFET is the registered trademark for International Rectifier Power MOSFETs)
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1
PVDZ172N & PbF
Electrical Specifications (-40°C ≤ T ≤ =+85°C unless otherwise specified)
A
INPUT CHARACTERISTICS
Limits
Units
Minimum Control Current (see figures 1 and 2)
10
mA
Maximum Control Current for Off-State Resistance
0.4
5.0 to 25
6.0
mA
mA
V
@ TA=+25°C
Control Current Range (Caution: Current limit input LED, see figure 6)
Maximum Reverse Voltage
OUTPUT CHARACTERISTICS
Units
Operating Voltage Range
0 to 60
V(DC)
°
Maximum Load Current 40 C (see figures 1 and 2)
1.5
4.0
2.0
A(DC)
A(DC)
ms
Maximum Pulsed Load Current @TA=+25°C (100 ms @ 10% duty cycle)
Maximum Turn-On Time @TA=+25°C (see figure 7)
For 500mA, 50VDC Load, 10mA Control
Maximum Turn-Off Time @TA=+25°C (see figure 7)
For 500mA, 50VDC Load, 10mA Control
0.5
ms
Maximum On State Resistance @TA=+25°C(pulsed) (see figure 4)
1.0A load, 10mA Control
250
mΩ
Minimum Off State Resistance @TA=+25°C @ 48 VDC (see figure 5)
Minimum Off-State dv/dt
108
Ohms
1000
V/µs
Output Capacitance (see figure 9)
150
pF @ 50 VDC
GENERAL CHARACTERISTICS
Dielectric Strength, Input-Output
Limits
Units
4000
V(RMS)
Insulation Resistance, Input-Output , 90 VDC
Capacitance, Input-Output
1012 @TA=+25°C - 50% RH
Ω
1.0
pF
°C
°C
°C
Lead Temperature (1.6mm below seating plane) for 10 seconds
+260
Ambient Temperature Range:
Operating
Storage
-40 to +85
-40 to +100
International Rectifier does not recommend the use of this product in aerospace, avionics, military or life support applications.
Users of this International Rectifier product in such applications assume all risks of such use and indemnify International
Rectifier against all damages resulting from such use.
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2
PVDZ172N & PbF
Wiring Diagrams
Source
DC
8
5
Anode
Cathode
Electromechanical
Analogy
Schematic
Drain
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Figure 4. Typical On-Resistance
Figure 3. Typical On-Characteristics
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3
PVDZ172N & PbF
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Figure 6. Input Characteristics
(Current Controlled)
Figure 5. Typical Normalized Off-State Leakage
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Figure 7. Typical Delay Times
Figure 8. Delay Time Definitions
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Figure 9. Typical Output
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ꢣ
PVDZ172N & PbF
Case Outlines
ꢩ1-2ꢩ13 ꢩꢩ (MS-ꢩꢩ1Aꢫ)
ꢩ1-2ꢩ1ꢨ ꢩꢩ
IR WORLD HEADQUARTERS: 233 ꢧansas St., El Segundo, California ꢨꢩ2ꢣ5 Telꢪ (31ꢩ) 252-71ꢩ5
Data and specifications subject to change without notice. 8/28/2006
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5
相关型号:
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