PXAC241702FCV1R0 [INFINEON]
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 â 2400 MHz;
| 型号： | PXAC241702FCV1R0 |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 â 2400 MHz |
| 文件： | 总10页 (文件大小：1206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PXAC241702FC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 2300 – 2400 MHz
Description
The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical
design intended for use in multi-standard cellular power amplifier
applications in the 2300 to 2400 MHz frequency band. Features in-
clude dual-path design, high gain and thermally-enhanced package
with earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXAC241702FC
Package H-37248-4
Features
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 360 mA, ƒ = 2300 MHz
3GPP WCDMA signal,
•ꢀ Asymmetrical Doherty design
- Main: P
- Peak: P
= 60 W Typ
= 90 W Typ
1dB
1dB
10 dB PAR, 3.84 MHz BW
•ꢀ Broadband internal input and output matching
24
20
16
12
8
75
50
25
0
Efficiency
•ꢀ Typical pulsed CW performance, 2350 MHz, 28 V,
Doherty configuration
- Output power at P
- Efficiency = 49%
- Gain = 17.5 dB
= 100 W
1dB
Gain
•ꢀ Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
-25
-50
-75
•ꢀ Capable of handling 10:1 VSWR @28 V, 120 W
PAR @ 0.01% CCDF
(CW) output power
4
•ꢀ Low thermal resistance
•ꢀ Pb-free and RoHS compliant
c241702fc-gr1a
0
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
= 28 V, I = 360 mA, V = 1.2 V, P = 28 W avg, ƒ = 2400 MHz. 3GPP signal, 3.84 MHz
V
DD
DQ(main)
GS(peak)
OUT
channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.
Characteristic
Symbol
Min
15.5
46
Typ
16.5
52
Max
—
Unit
dB
Gain
G
ps
Drain Efficiency
hD
—
%
Adjacent Channel Power Ratio
Output PAR (at 0.01% probability on CCDF)
ACPR
OPAR
—
–33.5
7.5
–28.0
—
dBc
dB
6.5
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC
DC Characteristics (each side)
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
DS
V
= 28 V, V = 0 V
I
I
—
1
µA
µA
µA
W
DS
DS
GS
DSS
DSS
V
= 63 V, V = 0 V
—
—
10
1
GS
Gate Leakage Current
V
GS
= 10 V, V = 0 V
I
—
—
DS
GSS
On-State Resistance
(main)
(peak)
V
GS
= 10 V, V = 0.1 V
R
R
—
0.19
0.16
2.65
1.30
—
DS
DS(on)
DS(on)
V
GS
= 10 V, V = 0.1 V
—
—
W
DS
Operating Gate Voltage (main)
(peak)
V
= 28 V, I
= 28 V, I
= 360 mA
= 0 mA
V
GS
2.3
0.8
3.0
1.8
V
DS
DS
DQ
DQ
V
V
GS
V
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
–6 to +10
0 to +32
225
V
GS
DD
V
V
Junction Temperature
Storage Temperature Range
T
J
°C
T
STG
–65 to +150
0.53
°C
Thermal Resistance (T
= 70°C, 100 W CW)
R
qJC
°C/W
CASE
Ordering Information
Type and Version
Order Code
Package and Description
Shipping
PXAC241702FC V1 R0
PXAC241702FCV1R0XTMA1
H-37248-4, ceramic open-cavity, push-pull, earless
H-37248-4, ceramic open-cavity, push-pull, earless
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
PXAC241702FC V1 R250 PXAC241702FCV1R250XTMA1
Data Sheet
2 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC
Typical Performance (data taken in an Infineon production test fixture)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 360 mA, ƒ = 2400 MHz
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 360 mA, ƒ = 2350 MHz
3GPP WCDMA signal,
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
10 dB PAR, 3.84 MHz BW
24
20
16
12
8
75
50
25
0
24
20
16
12
8
75
50
25
0
Efficiency
Efficiency
Gain
Gain
-25
-50
-75
-25
-50
-75
PAR @ 0.01% CCDF
PAR @ 0.01% CCDF
4
4
0
c241702fc-gr1c
0
c241702fc-gr1b
25
30
35
40
45
50
55
25
30
35
40
45
50
55
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA 3GPP Drive-up
Single-carrier WCDMA
Broadband Performance
VDD = 28 V, IDQ = 360 mA, POUT = 44.47 dBm,
3GPP WCDMA signal, 10 dB PAR
VDD = 28 V, IDQ = 360 mA, ƒ = 2300-2400 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz Bandwidth
24
22
20
18
16
14
12
60
50
40
30
20
10
0
0
70
60
50
40
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
Efficiency
2300 ACPL
2400 ACPL
2350 ACPU
2300 EFF
2350 ACPL
2300 ACPU
2400 ACPU
2350 EFF
Gain
2400 EFF
c241702fc-gr3
c241702fc-gr2
30
35
40
45
50
55
60
2150
2250
2350
2450
2550
Average Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC
Typical Performance (cont.)
CW Performance
at selected supply voltages
IDQ = 360 mA, ƒ = 2300 MHz
CW Performance
VDD = 28 V, IDQ = 360mA
35
70
60
50
40
30
20
10
0
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
Efficiency
Efficiency
30
25
20
15
10
5
Gain
Gain
2300 MHz
2350 MHz
2400 MHz
VDD = 24 V
V
V
DD = 28 V
DD = 32 V
c241702fc-gr5
0
c241702fc-gr6a
0
25
30
35
40
45
50
55
25
30
35
40
45
50
55
Output Power (dBm)
Output Power (dBm)
CW Performance
CW Performance
at selected supply voltages
IDQ = 360 mA, ƒ = 2350 MHz
at selected suply voltages
IDQ = 360 mA, ƒ = 2400 MHz
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
Efficiency
Efficiency
Gain
Gain
VDD = 24 V
VDD = 24 V
DD = 28 V
DD = 32 V
V
V
DD = 28 V
DD = 32 V
V
V
c241702fc-gr6b
0
c241702fc-gr6c
0
25
30
35
40
45
50
55
25
30
35
40
45
50
55
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC
Typical Performance (cont.)
CW Performance, single side
Small Signal Gain & Input Return Loss,
VDD = 28 V, IDQ = 360 mA
25
0
20
-5
Gain
15
-10
-15
-20
-25
10
IRL
5
c241702fc-gr7
0
2200
2300
2400
2500
Frequency (MHz)
See next page for load pull performance
Data Sheet
5 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC
Load Pull Performance
Z Source
Z Load
D1
S
G1
G2
D2
Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 360 mA
P
1dB
Class AB
Max Output Power
Max Efficiency
Freq
[MHz]
Zin
[W]
Gain
[dB]
PAE
[%]
P
[dBm]
P
[W]
Zo
[W]
Gain
[dB]
PAE
[%]
P
[dBm]
P
OUT
[W]
Zo
[W]
OUT
OUT
OUT
2300
2350
2400
7.02 – j16.25
8.74 – j17.99
12.84 – j19.05
18.46
18.55
18.51
48.25
51.07
49.06
48.26
48.10
47.87
66.99
64.57
61.24
3.70 – j5.99
3.95 – j6.20
4.07 – j6.49
21.09
21.35
21.28
60.29
58.44
58.55
46.10
45.56
45.90
40.78
35.96
38.91
7.31 – j2.51
6.07 – j1.30
5.53 – j1.93
Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA
P
1dB
Class AB
Max Output Power
Max Efficiency
Freq
[MHz]
Zin
[W]
Gain
[dB]
PAE
[%]
P
P
[W]
Zo
[W]
Gain
[dB]
PAE
[%]
P
P
OUT
[W]
Zo
[W]
OUT
OUT
OUT
[dBm]
50.03
49.84
49.77
[dBm]
48.52
48.23
47.17
2300
2350
2400
6.20 – j13.36
8.28 – j12.82
10.47 – j14.25
17.67
17.83
17.66
52.03
50.54
49.75
100.69 2.61 – j6.18
19.73
19.83
20.75
59.11
56.93
56.70
71.07
66.48
52.14
4.52 – j4.62
4.23 – j4.25
4.10 – j2.69
96.38
94.84
2.65 – j6.19
2.52 – j6.34
Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, V = 1.5 V
G
P
1dB
Class C
Max Output Power
Max Efficiency
Freq
[MHz]
Zin
[W]
Gain
[dB]
PAE
[%]
P
[dBm]
P
[W]
Zo
[W]
Gain
[dB]
PAE
[%]
P
[dBm]
P
OUT
[W]
Zo
[W]
OUT
OUT
OUT
2300
2350
2400
6.20 – j13.36
8.28 – j12.82
10.47 – j14.25
14.18
13.92
14.08
58.22
55.03
53.80
50.38
50.16
50.08
109.14 2.47 – j5.92
103.75 2.45 – j6.22
101.86 2.31 – j6.36
15.13
14.84
15.19
64.64
61.91
60.42
48.83
49.20
47.54
76.42
83.25
56.77
4.33 – j4.75
3.70 – j5.15
4.17 – j3.00
Reference Circuit, 2300 MHz to 2400 MHz
DUT
Reference Circuit Part No. LTA/PXAC241702FC V1
PCB
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this reference circuit on the Infineon Web site at www.infineon.com/rfpower
PXAC241702FC V1
Data Sheet
6 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC
Reference Circuit (cont.)
RO4350, .020
RO4350, .020
(61)
VDD
C202
C201
C204
C203
C102
C101
C205
R101
R103
C103
C206
C208
C207
C104
C105
U1
RF_OUT
RF_IN
C209
C210
R102
C215
VDD
C107
C106
C212
C213
C214
C211
PXAC241702FC_IN_01
PXAC241702FC_OUT_01
p
x a c 2 4 1 7 0 2 f c _ c d _ 8 - 2 5 - 1 4
Reference circuit assembly diagram (not to scale)
Component Information
Component
Input
Description
Manufacturer
P/N
C101, C104, C105, C106
C102, C107
C103
Capiacitor, 15 pF
Capiacitor, 10 µF
Capiacitor, 0.3 pF
Chip resistor, 10 ohms
Chip resistor, 50 ohms
Coupler
ATC
600F150JT250
Taiyo Yuden
ATC
UMK325C7106MM-T
600F0R3BT250
R101, R102
R103
Panasonic Electronic Components ERJ-8GEYJ101V
Anaren
Anaren
C16A50Z4
U1
X3C25P1-02S
Output
C201, C209, C211
Capiacitor, 15 pF
Capiacitor, 10 µF
ATC
600F150JT250
C202, C203, C204, C212,
C213, C214
Taiyo Yuden
UMK325C7106MM-T
C205, C215
C206
Capiacitor, 220 µF, 50 V
Capiacitor, 0.6 pF
Capiacitor, 4.7 pF
Capiacitor, 1.2 pF
Cornell Dubilier Electronics (CDE)
SK221M050ST
600F0R6BT250
600F4R7BT250
600F 1R2BT250
ATC
ATC
ATC
C207
C208, C210
Data Sheet
7 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC
Pinout Diagram (top view)
S
Main
Peak
Pin
D1
D2
G1
G2
S
Description
D1
D2
Drain Device 1 (Main)
Drain Device 2 (Peak)
Gate Device 1 (Main)
Gate Device 2 (Peak)
Source (flange)
H-37248-4__do_pd_10-10-2012
G1
G2
Lead connections for PXAC241702FC
See next page for package mechanical specifications
Data Sheet
8 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC
Package Outline Specifications
Package H-37248-4
(8.89
[.350])
(5.08
[.200])
2X 45° X 2.72
[45° X .107]
C
L
+0.13
-0.38
4X R0.76
2X 4.83±0.51
[.190±0.020]
D1
D2
+0.005
-0.015
R.030
[
]
FLANGE 9.78
[.385]
LID 9.40
[.370]
19.43±0.51
[.765±0.020]
C
L
G1
G2
4X 3.81
[.150]
2X 12.70
[.500]
SPH 1.57
[.062]
19.81±0.20
[.780±0.008]
1.02
[.040]
H-37248-4_po_02_01-09-2013
[
3.76±0.25
[.148±0.010]
C
L
20.57
[.810]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005].
4. Pins: D1, D2 – drain, G1, G2 – gate, S (flange) – source.
5. Lead thickness: 0.10 +0.076/–0.025 [.004 +.003/–.001].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].
Find the latest and most complete information tabout products and packaging at the Infineon Internet page
www.infineon.com/rfpower
Data Sheet
9 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC V1
Revision History
Revision Date
Data Sheet Page
Subjects (major changes since last revision)
01
2014-04-04
Advance
All
Data Sheet reflects advance specification for product development
02
2014-08-28
Production
All
Data Sheet represents released product specifications, including reference circuit and updated
performance information.
02.1
2016-06-22
Production
2
Updated ordering information
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
(highpowerRF@infineon.com)
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2016-06-22
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
10 of 10
Rev. 02.1, 2016-06-22
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