PXAC261212FC_16 [INFINEON]

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 â 2690 MHz;


型号：	PXAC261212FC_16
厂家：	Infineon
描述：	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 â 2690 MHz
文件：	总10页 (文件大小：1282K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PXAC261212FC

Thermally-Enhanced High Power RF LDMOS FET

120 W, 28 V, 2496 – 2690 MHz

Description

The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric

designed for use in multi-standard cellular power ampliﬁer applications

in the 2496 to 2690 MHz frequency band.It features dual-path design,

input and output matching, and a thermally-enhanced package with

earless flange. Manufactured with Infineon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

PXAC261212FC

Package H-37248-4

Features

Two-carrier 3GPP WCDMA

V_DD= 28 V, I_DQ= 280 mA,

V_GS= 2.62 V, ƒ = 2635 MHz

10 MHz carrier spacing, 8 dB PAR

3.84 MHz bandwidth

•ꢀ Broadband internal matching

•ꢀ Asymmetric design

- Main P

- Peak P

= 50 W

= 75 W

1dB

Efficiency

•ꢀ CW performance in Doherty conﬁguration,

2635 MHz, 28 V

- Output power at P

- Gain = 14.4 dB

- Efﬁciency = 57%

= 107 W

1dB

•ꢀ Integrated ESD protection: Human Body Model,

Gain

class 1C (per JESD22-A114)

•ꢀ Capable of handling 10:1 VSWR @28 V, 120 W

(CW) output power

•ꢀ Low thermal resistance

•ꢀ Pb-free and RoHS-compliant

c261212fc-gr1c

Output Power (dBm)

RF Characteristics

Two-carrier WCDMA Speciﬁcations (tested in Inﬁneon Doherty test ﬁxture)

= 28 V, V = 1.3 V, I = 280 mA, P

= 28 W average, ƒ = 2630 MHz, ƒ = 2640 MHz. 3GPP WCDMA signal:

GS(peak)

OUT

3.84 MHz bandwidth, 8 dB PAR @0.01% CCDF.

Characteristic

Linear Gain

Symbol

Min

14.2

Typ

15.0

Max

—

Unit

Drain Efficiency

h_D

—

Intermodulation Distortion

IMD

—

–25

–22

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

—

Max

—

Unit

Drain-source Breakdown Voltage

Drain Leakage Current

= 0 V, I = 10 mA

(BR)DSS

= 28 V, V = 0 V

—

1.0

10.0

1.0

—

µA

DSS

GSS

= 63 V, V = 0 V

—

Gate Leakage Current

= 10 V, V = 0 V

—

On-state Resistance

(main)

(peak)

= 10 V, V = 0.1 V

—

0.19

0.16

2.6

1.3

DS(on)

= 10 V, V = 0.1 V

—

Operating Gate Voltage (main)

(peak)

= 28 V, I

= 280 mA

= 0 A

2.1

0.80

3.1

1.8

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-source Voltage

Gate-source Voltage

Operating Voltage

DSS

–6 to +10

0 to +32

225

Junction Temperature

Storage Temperature Range

°C

STG

–65 to +150

0.61

°C

Thermal Resistance (T

= 70°C, 100 W CW)

°C/W

CASE

Ordering Information

Type and Version

PXAC261212FC V1 R0

PXAC261212FC V1 R250

Order Code

Package and Description

Shipping

PXAC261212FCV1R0XTMA1

PXAC261212FCV1R250XTMA1

H-37248-4, ceramic open-cavity, earless

Tape & Reel, 50 pcs

Tape & Reel, 250 pcs

Data Sheet

2 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC

Typical Performance (data taken in Infineon Doherty reference test fixture)

Two-carrier 3GPP WCDMA

V_DD= 28 V, I_DQ= 280 mA,

V_GS= 2.62 V, ƒ = 2605 MHz

10 MHz carrier spacing, 8 dB PAR

3.84 MHz bandwidth

Two-carrier 3GPP WCDMA

V_DD= 28 V, I_DQ= 280 mA,

V_GS= 2.62 V, ƒ = 2575 MHz

10 MHz carrier spacing, 8 dB PAR

3.84 MHz bandwidth

Efficiency

Gain

c261212fc-gr1b

c261212fc-gr1a

Output Power (dBm)

Two-carrier 3GPP WCDMA

V_DD= 28 V, I_DQ= 280 mA,

Two-carrier 3GPP WCDMA

V_DD= 28 V, I_DQ= 280 mA,

V_GS= 2.62 V, ƒ = 2635 MHz

10 MHz carrier spacing, 8 dB PAR,

3.84 MHz bandwidth

V_GS= 2.62 V, ƒ = 2605 MHz

10 MHz carrier spacing, 8 dB PAR,

3.84 MHz bandwidth

-20

-40

-60

-20

-40

-60

IMD Low

IMD Up

ACPR

IMD Low

IMD Up

ACPR

Efficiency

c261212fc-gr2c

c261212fc-gr2b

Output Power (dBm)

Data Sheet

3 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC

Typical Performance (cont.)

Two-carrier 3GPP WCDMA

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 280 mA, V_GS= 2.62V,

3GPP WCDMA signal, 8 dB PAR,

V_DD= 28 V, I_DQ= 280 mA,

V_GS= 2.62 V, ƒ = 2575 MHz

10 MHz carrier spacing, 8 dB PAR,

3.84 MHz bandwidth

10 MHz carrier spacing, 3.84 MHz BW

-10

-20

-30

-40

-50

-20

-40

-60

IMD Low

IMD Up

ACPR

2575 IMDL

2605 IMDL

2635 IMDL

2575 IMDU

2605 IMDU

Efficiency

2635 IMDU

c261212fc-gr3

c261212fc-gr2a

Output Power (dBm)

CW Performance

at various V_DD

I_DQ= 280 mA, ƒ = 2635 MHz

CW Performance

V_DD= 28 V, I_DQ= 280 mA

22.5

20.0

17.5

15.0

12.5

10.0

7.5

Efficiency

Gain

V_DD= 24 V

V_DD= 28 V

_DD= 32 V

2575 MHz

2635 MHz

2605 MHz

c261212fc-gr4

c261212fc-gr5c

5.0

Output Power (dBm)

Data Sheet

4 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC

Typical Performance (cont.)

CW Performance

at various V_DD

I_DQ= 280 mA, ƒ = 2605 MHz

CW Performance

at various V_DD

I_DQ= 280 mA, ƒ = 2575 MHz

22.5

20.0

17.5

15.0

12.5

10.0

7.5

22.5

Efficiency

20.0

17.5

Gain

15.0

12.5

10.0

V_DD= 24 V

V_DD= 28 V

V_DD= 24 V

V_DD= 28 V

7.5

_DD= 32 V

c261212fc-gr5a

c261212fc-gr5b

5.0

Output Power (dBm)

Small Signal CW Performance

Gain & Input Return Loss

V_DD= 28 V, I_DQ= 280 mA

-5

-10

-15

-20

IRL

Gain

c261212fc-gr6

2500

2550

2600

2650

2700

2750

Frequency (MHz)

Data Sheet

5 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC

Load Pull Performance

Z Source

Z Load

Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, V = 1.4 V, I

= 250 mA

1dB

Class AB

Max Output Power

Max PAE

Freq

[MHz]

[W]

Gain

[dB]

PAE

[%]

[W]

Gain

OUT

PAE

[%]

OUT

[dBm]

48.53

48.30

[W]

71.3

67.6

[dB]

19.1

19.4

19.5

[dBm]

46.90

46.68

46.76

[W]

49.0

46.6

47.4

2490

2590

2690

5.1 – j14.5

6.8 – j16.6

12.9 – j17.8

2.8 – j5.8

2.8 – j6.2

2.9 – j6.0

16.9

17.0

17.2

52.8

50.4

6.0 – j4.2

5.5 – j3.6

4.5 – j3.3

62.4

61.1

60.4

Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, V = 1.4 V

1dB

Class C

Max Output Power

Max PAE

Freq

[MHz]

[W]

Gain

[dB]

[W]

PAE

[%]

[W]

Gain

[dB]

PAE

[%]

OUT

[W]

[dBm]

50.27

50.08

50.03

[dBm]

48.40

48.60

48.70

2490

2590

2690

4.5 – j11.4

4.7 – j12.9

9.2 – j14.5

11.2 – j7.5

13.1 – j6.3

14.1 – j3.4

13.0

13.4

13.7

106.4

101.9

100.7

55.6

54.1

55.5

4.3 – j5.4

6.0 – j6.3

8.0 – j7.0

14.1

14.6

14.7

69.2

72.4

74.1

65.3

63.2

62.0

Reference Circuit, tuned for 2575 – 2675 MHz

DUT

PXAC261212FC

Test Fixture Part No.

PCB

LTA/PXAC261212FC V1

Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ε_r= 3.66

Find Gerber ﬁles for this reference ﬁxture on the Inﬁneon Web site at (www.inﬁneon.com/rfpower)

Data Sheet

6 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC

Reference Circuit (cont.)

RO4350, .020 (94)

VGG

RO4350, .020 (60)

VDD

C211

C210

C213

C102

C109

C212

C215

R104

C103

C104 C110

C206

R102

C208

C207

R103

C202

RF_IN

RF_OUT

C107

C111

C204

C201

C209

C214

C216

C205

C106

C108

VGG

VDD

C101

C105

R101

C203

PXAC261212FC_IN_01_D

PXAC261212FC_OUT_01_D

2 6 1 2 1 2 f c _ c d _ 2 0 1 4 - 0 6 - 0 3

Reference circuit assembly diagram (not to scale)

Assembly Information

Component

Input

Description

Manufacturer

P/N

C101, C102

C103, C105, C108, C109

C104

Chip capacitor, 4.7 µF

Chip capacitor, 10 pF

Chip capacitor, 0.4 pF

Chip capacitor, 0.8 pF

Chip capacitor, 0.2 pF

Chip capacitor, 0.3 pF

Resistor, 10 Ohm

Murata Electronics North America

GRM32ER71H475KA88L

ATC600F100JW250T

ATC600F0R4CW250T

ATC600F0R8AW250T

ATC600F0R2AW250T

ATC600F0R3CW250T

ERJ-3GEYJ100V

ATC

C106, C107

C110

ATC

C111

ATC

R101, R104

R102

Panasonic – ECG

Anaren

Resistor, 5.1k Ohm

Resistor, 50 Ohm

ERJ-3GEYJ512V

R103

RFP-060120A15Z50

XC2650P-03S

90° RF hybrid coupler

Anaren

(table continued next page)

Data Sheet

7 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC

Reference Circuit (cont.)

Assembly Information (cont.)

Component

Output

Description

Manufacturer

P/N

C201, C215, C216

C202, C204, C211, C208

C203

Chip capacitor, 10 pF

Chip capacitor, 0.5 pF

Capacitor, 220 µF

ATC

ATC600F100JW250T

ATC600F0R5CW250T

SK221M050ST

ATC

Cornell Dubilier Electronics (CDE)

Murata Electronics North America

C205, C209, C210, C212,

C213, C214

Chip capacitor, 4.7 µF

GRM32ER71H475KA88L

C206

C207

Chip capacitor, 0.3 pF

Chip capacitor, 3.9 pF

ATC

ATC600F0R3CW250T

ATC600F3R9CW250T

Pinout Diagram (top view)

Description

Drain device 1 (main)

Drain device 2 (peak)

Gate device 1 (main)

Gate device 2 (peak)

Source (ﬂange)

Main

Peak

H-37248-4_pd_10-10-2012

Data Sheet

8 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC

Package Outline Specifications

Package H-37248-4

(8.89

[.350])

(5.08

[.200])

2X 45° X 2.72

[45° X .107]

+0.13

-0.38

4X R0.76

2X 4.83±0.51

[.190±0.020]

+0.005

-0.015

R.030

[

]

FLANGE 9.78

[.385]

LID 9.40

[.370]

19.43±0.51

[.765±0.020]

4X 3.81

[.150]

2X 12.70

[.500]

SPH 1.57

[.062]

19.81±0.20

[.780±0.008]

1.02

[.040]

H-37248-4_po_02_01-09-2013

0.0381 [.0015]

-A-

3.76±0.25

[.148±0.010]

20.57

[.810]

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances 0.127 [.005].

4. Pins: D1, D2 – drain, G1, G2 – gate, S – source.

5. Lead thickness: 0.10 +0.076/–0.025 [.004 +.003/–.001].

6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].

Find the latest and most complete information tabout products and packaging at the Inﬁneon Internet page

(www.inﬁneon.com/rfpower)

Data Sheet

9 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC V1

Revision History

Revision Date

Data Sheet Page

Subjects (major changes since last revision)

Proposed speciﬁcation for new product development.

Speciﬁcation for production-released device.

Corrected typo in features.

2014-03-03

2014-06-12

2014-06-30

2016-06-22

Advance

all

Production

02.1

02.2

Updated ordering information

We Listen toYour Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

(highpowerRF@inﬁneon.com)

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2016-06-22

Published by

Inﬁneon Technologies AG

85579 Neubiberg, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.inﬁneon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of In-

ﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device

or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet

10 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC_16 [INFINEON]

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