PXFC212551SCV1R250XTMA1 [INFINEON]
RF Power Field-Effect Transistor,;
| 型号： | PXFC212551SCV1R250XTMA1 |
| 厂家： | 
Infineon |
| 描述： | RF Power Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：373K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PXFC212551SC
Thermally-Enhanced High Power RF LDMOS FET
240 W, 28 V, 2110 – 2170 MHz
Description
PXFC212551SC
Package H-37248H-2
The PXFC212551SC is a 240-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flanges. Manufactured with Infineon's advanced LDMOS process,
this device provides excellent thermal performance and superior
reliability.
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1600 mA
ƒ = 2165 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
•ꢀ Broadband internal input and output matching
•ꢀ Typical Pulsed CW performance, 2140 MHz, 28 V,
10 µs pulse width, 10% duty cycle, Class AB
- Output power at P
- Efficiency = 50%
- Gain = 19 dB
= 240 W
1dB
21
20
19
18
17
16
15
48
40
32
24
16
8
Gain
•ꢀ Capable of handling 10:1 VSWR @28 V, 240 W
(CW) output power
•ꢀ Integrated ESD protection
•ꢀ Human Body Model Class 2 (per ANSI/ESDA/
Efficiency
JEDEC JS-001)
•ꢀ Low thermal resistance
•ꢀ Pb-free and RoHS compliant
0
pxfc212551sc_g1
29
33
37
41
45
49
53
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
= 28 V, I = 1600 mA, P = 50 W avg, ƒ = 2160 MHz, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
V
DD
DQ
OUT
1
2
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
19
Typ
20.5
28
Max
—
Unit
dB
G
ps
Drain Efficiency
Intermodulation Distortion
hD
25
—
%
IMD
—
–31
–27
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 8
Rev. 03.1, 2015-04-13
PXFC212551SC
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
1
µA
µA
µA
W
DS
DS
GS
DSS
DSS
= 63 V, V = 0 V
—
—
10
1
GS
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V = 0 V
I
—
—
DS
GSS
V
GS
= 10 V, V = 0.1 V
R
—
0.05
2.64
—
DS
DS(on)
V
= 28 V, I
= 1600 mA
V
GS
2.3
2.9
V
DS
DQ
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
–6 to +10
0 to +32
225
V
GS
DD
V
V
Junction Temperature
Storage Temperature Range
T
°C
J
T
STG
–65 to +150
0.322
°C
Thermal Resistance (T
= 70°C, 213 W CW)
R
qJC
°C/W
CASE
Ordering Information
Type and Version
Order Code
Package Description
Shipping
PXFC212551SC V1 R250
PXFC212551SCV1R250XTMA1
H-37248H-2, earless flange
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 03.1, 2015-04-13
PXFC212551SC
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1600 mA
ƒ = 2165 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
VDD = 28 V, IDQ = 1600 mA
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-15
-25
-35
-45
-55
-65
-15
-25
-35
-45
-55
-65
50
40
30
20
10
0
IMD Low
IMD Up
ACPR
Efficiency
2115 IMDL
2115 IMDU
2140 IMDL
2140 IMDU
2165 IMDL
2165 IMDU
pxfc212551sc_g2
pxfc212551sc_g3
29
33
37
41
45
49
53
29
33
37
41
45
49
53
Output Power (dBm)
Output Power (dBm)
Pulsed CW Performance
VDD = 28 V, IDQ = 1600mA
Pulsed CW Performance at
various VDD
2170 Gain
2110 Gain
2140 Gain
2110 Eff
2140 Eff
2170 Eff
IDQ = 1600 mA, ƒ = 2170 MHz
32V
24V
28V
22
20
18
16
14
12
21
60
50
40
30
20
10
0
20
19
18
17
16
15
Gain
50
Gain
40
30
20
10
Efficiency
Efficiency
43
pxfc212551sc_g4
pxfc212551sc_g5
40
45
48
50
53
55
43
45
47
49
51
53
55
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 8
Rev. 03.1, 2015-04-13
PXFC212551SC
Typical Performance (cont.)
Small Signal CW Performance
Gain & Input Return Loss
VDD = 28 V, IDQ = 2000 mA
21
20
19
18
17
16
15
14
13
-2
-4
Gain
-6
-8
-10
-12
-14
-16
-18
IRL
pxfc212551sc_g6
1950
2050
2150
2250
2350
Frequency (MHz)
Load Pull Performance
Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, I
= 1600 mA
DQ
P
1dB
Max Output Power
Max Drain Efficiency
Zs
[W]
Zl
[W]
Zl
[W]
Freq
[MHz]
Gain
[dB]
P
P
Gain
[dB]
P
P
hD
hD
OUT
OUT
OUT
OUT
[W]
[dBm]
[W]
293
286
278
[dBm]
[%]
[%]
60.9
61.1
59.1
2110 4.92 – j5.64 0.71 – j4.53
2140 5.68 – j5.11 0.73 – j4.46
2170 6.75 – j2.91 0.80 – j4.40
18.0
18.8
18.7
54.7
50.8
51.1
50.9
1.58 – j4.29
1.41 – j4.03
1.42 – j3.98
20.1
20.8
20.4
53.2
207
207
212
54.6
53.2
54.4
53.3
Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, I
= 90 mA
DQ
P
1dB
Max Output Power
Max Drain Efficiency
Zs
[W]
Zl
[W]
Zl
[W]
Freq
[MHz]
Gain
[dB]
P
P
Gain
[dB]
P
P
OUT
hD
hD
OUT
OUT
OUT
[dBm]
[W]
338
329
315
[dBm]
[W]
226
220
211
[%]
[%]
2110 4.92 – j5.64 0.66 – j4.58
2140 5.68 – j5.11 0.65 – j4.53
2170 6.75 – j2.91 0.70 – j4.52
16.6
17.3
17.0
55.3
53.2
52.3
50.1
1.59 – j4.35
1.49 – j4.09
1.36 – j3.75
18.3
19.0
18.8
53.5
64.5
64.0
62.6
55.2
53.4
55.0
53.2
Data Sheet
4 of 8
Rev. 03.1, 2015-04-13
PXFC212551SC
Reference Circuit , 2110 – 2170 MHz
RO4350, .020 MIL
(60)
RO4350, .020 MIL
(61)
C801 C802
R801
R803
C803
R804
S1
S3
S2
R802
C205 C209 C208
C201
R805
C210
R103
VDD
C104 C103
VGS
R104
RF_OUT
C207
RF_IN
C105
R101
VDD
C101
C102
R102
C203
C202
C206 C204
C211
PXFC212551SC_IN_02
PXFC212551SC_OUT_02
x f c 2 1 2 5 5 1 s c _ C D _ 0 3 - 0 2 - 2 0 1 5
p
Reference circuit assembly diagram (not to scale)
Data Sheet
5 of 8
Rev. 03.1, 2015-04-13
PXFC212551SC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PXFC212551SC V1
Test Fixture Part No.
PCB
LTN/PXFC212551SC V1
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2110 – 2170 MHz
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Components Information
Component
Input
Description
Manufacturer
P/N
C101, C104
C102, C103
C105
Capacitor, 10 µF
Capacitor, 15 pF
Capacitor, 10 pF
Capacitor, 1000 pF
Resistor, 10 W
Murata
LLL31BC70G106MA01L
ATC800A150JW150XB
ATC800A100JW150XB
ECJ-1VB1H102K
ERJ-8GEYJ100V
ERJ-8GEY0R00V
ERJ-8GEYJ202V
ERJ-3GEYJ132V
ERJ-3GEYJ122V
3224W-1-202E
ATC
ATC
C801, C802, C803
R101, R104, R802
R102, R103
R801, R805
R803
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Bourns Inc.
Resistor, 0.0 W
Resistor, 2k W
Resistor, 1.3k W
Resistor, 1.2k W
Potentiometer, 2k W
Voltage Regulator
Transistor
R804
S1
S2
Texas Instruments
LM78L05ACM
S3
Infineon Technologies
BCP56
Output
C201, C202
C203, C210
Capacitor, 10 pF
Capacitor, 220 µF
Capacitor, 4.7 µF
Garrett
8051J100GBTTR
Panasonic Electronic Components
Murata
EEE-FP1V221AP
C204, C205, C206,
C208, C209, C211
GRM32ER71H475KA88
C207
Capacitor, 33 pF
ATC
ATC800A330JW150XB
Data Sheet
6 of 8
Rev. 03.1, 2015-04-13
PXFC212551SC
Package Outline Specifications
Package H-37248H-2 with Formed Leads
D45° x .64
1.49±0.25
[.059±.010]
[.025]
+0.25
1.00
-0.10
+.010
.039
[
]
-.004
D
G
14.75±0.50
[.581±.020]
9.78
[.385]
C
L
C
L
+0.38
4X R0.51
-0.13
+.015
-.005
R.020
[
]
C
L
4X 5°±3°
2X 0.13±0.08
[.005±.003] SPH
2X 12.70
[.500]
3.76±0.25
[.148±.010]
19.81±0.20
[.780±.008]
(1.02
[.040])
H-34248H-2_gw_01_10-22-2012
20.57
[.810]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
7 of 8
Rev. 03.1, 2015-04-13
PXFC212551SC V1
Revision History
Revision
Date
Data Sheet Type
Advance
Page
All
Subjects (major changes since last revision)
01
02
03
2014-05-12
2014-05-16
2015-02-26
Data Sheet reflects advance specification for product development
Corrected package to H-37248H-2 throughout
Advance
All
Production
All
All
Data Sheet reflects released product specification
Revised all data and includes updated final specs, typical performance graphs, loadpull, refer-
ence circuit, package outline
03.1
2015-04-13
Production
1
Include HBM classification in Features
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
(highpowerRF@infineon.com)
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2015-04-13
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
8 of 8
03.1, 2015-04-13
相关型号：
©2020 ICPDF网 联系我们和版权申明