PZT3906 [INFINEON]
PNP Silicon Switching Transistor; PNP硅晶体管开关
| 型号： | PZT3906 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Switching Transistor |
| 文件： | 总5页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon Switching Transistor
PZT 3906
● High DC current gain 0.1 mA to 100 mA
● Low collector-emitter saturation voltage
● Complementary type: PZT 3904 (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
PZT 3906
ZT 3906
Q62702-Z2030
B
C
E
C
SOT-223
Maximum Ratings
Parameter
Symbol
Values
40
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
V
V
V
40
5
IC
200
1.5
mA
W
P
tot
Total power dissipation, T
S
= 80 ˚C
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 117
≤ 47
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
PZT 3906
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
V
V
(BR)CE0
(BR)CB0
(BR)EB0
40
40
5
–
–
–
–
–
–
–
V
I
C
= 1 mA, I
Collector-base breakdown voltage
= 10 µA, I = 0
Emitter-base breakdown voltage
= 10 µA, I = 0
Collector-base cutoff current
= 0
Collector-emitter cutoff current
B
= 0
–
IC
B
–
IE
C
ICB0
ICEV
IBEV
–
50
50
50
nA
V
CB = 30 V, I
E
–
VCE = 30 V, + VBE = 0.5 V
Collector-base cutoff current
–
VCE = 30 V, + VBE = 0.5 V
DC current gain1)
h
FE
–
60
80
100
60
30
–
–
–
–
–
–
–
300
–
–
IC
IC
IC
IC
IC
= 0.1 mA, VCE = 1 V
= 1 mA, VCE = 1 V
= 10 mA, VCE = 1 V
= 50 mA, VCE = 1 V
= 100 mA, VCE = 1 V
Collector-emitter saturation voltage1)
V
CEsat
BEsat
V
I
C
= 10 mA, I
B
= 1 mA
= 5 mA
–
–
–
–
0.25
0.4
IC
= 50 mA, I
B
Base-emitter saturation voltage1)
V
I
C
= 10 mA, I
C
= 1 mA
= 5 mA
–
–
–
–
0.85
0.95
IC
= 50 mA, I
C
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %
Semiconductor Group
2
PZT 3906
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
250
–
–
–
–
–
–
MHz
pF
I
C
= 10 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
CB = 5 V, f= 1 MHz
Input capacitance
EB = 0.5 V, f= 1 MHz
Noise figure
= 100 µA, VCE = 5 V, R
C
C
F
obo
4.5
10
4
V
ibo
–
V
–
dB
IC
S
= 1 kΩ,
f= 10 Hz to 15.7 kHz
Input impedance
h11e
h12e
h21e
h22e
2
–
–
–
–
12
kΩ
10– 4
–
IC
= 1 mA, VCE = 10 V, f= 1 kHz
Open-circuit reverse voltage transfer ratio
= 1 mA, VCE = 10 V, f= 1 kHz
Short-circuit forward current transfer ratio
= 1 mA, VCE = 10 V, f= 1 kHz
Open-circuit output admittance
= 1 mA, VCE = 10 V, f= 1 kHz
0.1
100
3
10
IC
400
60
IC
µS
IC
V
CC = 3 V, I
C
= 10 mA, IB1 = 1 mA
V
BE(off) = 0.5 V
Delay time
Rise time
t
t
d
–
–
–
–
35
35
ns
ns
r
V
CC = 3 V, I
C
= 10 mA, IB1 = IB2 = 1 mA
Storage time
Fall time
t
t
stg
f
–
–
–
–
225
75
ns
ns
(see diagrams)
Semiconductor Group
3
PZT 3906
Switching Times
Turn-on time when switched from + VBEoff = 0.5 V to – VBEon = 10.6 V, – ICon = 10 mA;
– IBon = 1 mA
Input waveform; tr < 1 ns; t
δ = 0.02.
p
= 300 ns;
Delay and rise time test circuit; total shunt
capacitance of test jig and connectors
CS < 4 pF; scope impedance = 10 MΩ.
Turn-off time ICon = 10 mA; IBon = – IBoff = 1 mA
Input waveform; tf < 1 ns; 10 µs < tp ≤ 500 µs; Storage and fall time test circuit; total shunt
δ = 0.02.
capacitance of test jig and connectors
S < 4 pF; scope impedance = 10 MΩ.
C
Semiconductor Group
4
PZT 3906
Total power dissipation Ptot = f (T
A
*; TS
)
Saturation voltage I = f (VBEsat, VCEsat)
C
* Package mounted on epoxy
hFE = 10
DC current gain hFE = f (I
C
)
Permissible pulse load Ptot max / Ptot DC = f (t )
p
V
CE = 1 V, normalized
Semiconductor Group
5
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