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Q62702-A1268 [INFINEON]

Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz); 硅PIN二极管（为RF信号低正向电阻非常低电容高速开关对于频率高达3GHz的PIN二极管）
Q62702-A1268
型号： Q62702-A1268
厂家： Infineon    Infineon
描述：

Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
硅PIN二极管（为RF信号低正向电阻非常低电容高速开关对于频率高达3GHz的PIN二极管）

二极管 开关
文件： 总4页 (文件大小：49K)
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BAR 63 ... W  
Silicon PIN Diode  
3
• PIN diode for high speed  
switching of RF signal  
• Low forward resistance  
• Very low capacitance  
2
• For frequencies up to 3 GHz  
1
VSO05561  
BAR 63-04W  
BAR 63-05W  
BAR 63-06W  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
3=C1/A2 SOT-323  
3 = C1/2  
BAR 63-04W G4s  
BAR 63-05W G5s  
BAR 63-06W G6s  
Q62702-A1261  
Q62702-A1267  
Q62702-A1268  
1 = A1  
1 = A1  
1 = C1  
2 = C2  
2 = A2  
2 = C2  
3 = A1/2  
Maximum Ratings  
Parameter  
Symbol  
Value  
50  
Unit  
V
Diode reverse voltage  
Forward current  
V
R
100  
250  
150  
mA  
mW  
°C  
I
F
Total power dissipation, T ≤ 105 °C  
P
tot  
S
Junction temperature  
T
j
Operating temperature range  
Storage temperature  
- 55 ...+150  
- 55 ...+150  
T
T
op  
stg  
Thermal Resistance  
1)  
Junction - ambient  
K/W  
R
≤ 340  
≤ 180  
thJA  
Junction - soldering point  
R
thJS  
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm  
Semiconductor Group  
1
Sep-07-1998  
1998-11-01  
Semiconductor Group  
1
BAR 63 ... W  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Breakdown voltage  
50  
-
-
-
-
V
V
(BR)  
I
= 5 µA  
(BR)  
Reverse current  
50  
µA  
I
R
V = 20 V  
R
Forward voltage  
-
0.95  
1.2 mV  
V
F
I = 100 mA  
F
AC characteristics  
Diode capacitance  
pF  
C
T
V = 0 V, f = 100 MHz  
-
-
0.3  
-
R
V = 5 V, f = 1 MHz  
0.21  
0.3  
R
Forward resistance  
r
Ω
f
I = 5 mA, f = 100 MHz  
-
-
1.2  
1
2
-
F
I = 10 mA, f = 100 MHz  
F
Charge carrier life time  
-
75  
-
µs  
τ
rr  
I = 10 mA, I = 6 mA, I = 3 mA  
F
R
R
Series inductance  
-
1.4  
-
nH  
L
s
Semiconductor Group  
Semiconductor Group  
2
Sep-07-1998  
1998-11-01  
2
BAR 63 ... W  
Forward current I = f (T *;T )  
F
A
S
* mounted on alumina  
120  
mA  
100  
90  
T
S
80  
T
A
I
70  
60  
50  
40  
30  
20  
10  
0
°C  
0
20  
40  
60  
80  
100 120  
150  
T ,T  
A
S
Permissible Pulse Load  
Permissible Pulse Load R  
= f(t )  
thJS  
p
I
/ I  
= f(t )  
Fmax FDC  
p
10 3  
10 3  
K/W  
-
I
D = 0  
10 2  
10 2  
0.005  
0.01  
0.02  
0.05  
0.1  
R
I
0.5  
0.2  
0.1  
0.2  
0.5  
10 1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
p
t
p
Semiconductor Group  
Semiconductor Group  
3
Sep-07-1998  
1998-11-01  
3
BAR 63 ... W  
Diode capacitance C = f (V )  
Forward resistance r = f (I )  
f F  
T
R
f = 1MHz  
f = 100MHz  
EHD07138  
EHD07139  
10 2  
0.5  
rf  
Ω
C T pF  
0.4  
0.3  
0.2  
0.1  
10 1  
10 0  
0
0
10 -1  
10 -2  
10 -1  
10 0  
10 1 mA 10 2  
10  
20  
V
30  
VR  
Ι F  
Semiconductor Group  
Semiconductor Group  
4
Sep-07-1998  
1998-11-01  
4

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