Q62702-B664 [INFINEON]
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation); 硅调谐二极管（高Q超突变双调谐二极管专为低调谐电压操作）
| 型号： | Q62702-B664 |
| 厂家： | 
Infineon |
| 描述： | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
| 文件： | 总3页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BBY 52-03W
Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
Type
Marking Ordering Code Pin Configuration
Q62702-B664
Package
BBY 52-03W
I (white)
1 = C
2 = A
-
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
V
Diode reverse voltage
Forward current
V
7
R
I
20
mA
°C
F
Operating temperature range
Storage temperature
T
T
- 55 ... + 150
- 55 ... + 150
op
stg
Semiconductor Group
1
Feb-04-1997
BBY 52-03W
Electrical Characteristics
Parameter
at T =25°C, unless otherwise specified
A
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
I
nA
pF
R
V = 6 V, T = 25 °C
-
-
-
-
10
R
A
V = 6 V, T = 65 °C
200
R
A
AC characteristics
Diode capacitance
C
T
V = 1 V, f = 1 MHz
1.4
1.85
1.5
2.2
R
V = 2 V, f = 1 MHz
-
-
R
V = 3 V, f = 1 MHz
-
1.35
1.15
-
R
V = 4 V, f = 1 MHz
0.85
1.45
R
Capacitance ratio
C /C
-
T1 T4
V = 1 V, V = 4 V, f = 1 MHz
1.1
-
1.6
0.9
2.1
1.8
R
R
Series resistance
r
Ω
s
V = 1 V, f = 1 GHz
R
Case capacitance
C
pF
nH
C
f = 1 MHz
-
-
0.12
1.8
-
Series inductance chip to ground
L
-
s
Semiconductor Group
2
Feb-04-1997
BBY 52-03W
Diode capacitance C = f (V )
T
R
f = 1MHz
2.4
pF
2.0
CD
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.0
1.5
2.0
2.5
3.0
V
4.0
VR
Semiconductor Group
3
Feb-04-1997
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