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Q62702-C1476 [INFINEON]

NPN Silicon AF Transistors (For AF input stages and driver applications High current gain); NPN硅晶体管自动对焦（ AF对于输入级和驱动器应用高电流增益）
Q62702-C1476
型号： Q62702-C1476
厂家： Infineon    Infineon
描述：

NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
NPN硅晶体管自动对焦（ AF对于输入级和驱动器应用高电流增益）

晶体 驱动器 小信号双极晶体管 光电二极管 放大器
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NPN Silicon AF Transistors  
BCW 60  
BCX 70  
● For AF input stages and driver applications  
● High current gain  
● Low collector-emitter saturation voltage  
● Low noise between 30 Hz and 15 kHz  
● Complementary types: BCW 61, BCX 71 (PNP)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BCW 60 A  
BCW 60 B  
BCW 60 C  
BCW 60 D  
BCW 60 FF  
BCW 60 FN  
BCX 70 G  
BCX 70 H  
BCX 70 J  
AAs  
ABs  
ACs  
ADs  
AFs  
ANs  
AGs  
AHs  
AJs  
Q62702-C1517  
Q62702-C1497  
Q62702-C1476  
Q62702-C1477  
Q62702-C1529  
Q62702-C1567  
Q62702-C1539  
Q62702-C1481  
Q62702-C1552  
Q62702-C1571  
B
E
C
SOT-23  
BCX 70 K  
AKs  
1)  
For detailed information see chapter Package Outlines.  
5.91  
Semiconductor Group  
1
BCW 60  
BCX 70  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
BCW 60 BCW 60 FF BCX 70  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CE0  
CB0  
EB0  
32  
32  
32  
32  
45  
45  
V
5
I
I
I
C
100  
200  
200  
330  
150  
mA  
Peak collector current  
Peak base current  
CM  
BM  
Total power dissipation, T  
S
= 71 ˚C Ptot  
mW  
˚C  
Junction temperature  
T
T
j
Storage temperature range  
stg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient1)  
R
th JA  
th JS  
≤ 310  
≤ 240  
K/W  
Junction - soldering point  
R
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
1)  
Semiconductor Group  
2
BCW 60  
BCX 70  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
V(BR)CE0  
V(BR)CB0  
V(BR)EB0  
V
IC  
= 10 mA  
BCW 60, BCW 60 FF  
BCX 70  
32  
45  
–
–
–
–
Collector-base breakdown voltage  
IC  
= 10 µA  
BCW 60, BCW 60 FF  
BCX 70  
32  
45  
–
–
–
–
Emitter-base breakdown voltage  
= 1 µA  
5
–
–
IE  
Collector cutoff current  
ICB0  
V
V
V
V
CB = 32 V  
CB = 45 V  
CB = 32 V, T  
CB = 45 V, T  
BCW 60, BCW 60 FF  
BCX 70  
= 150 ˚C BCW 60, BCW 60 FF  
= 150 ˚C BCX 70  
–
–
–
–
–
–
–
–
20  
20  
20  
20  
nA  
nA  
µA  
µA  
A
A
Emitter cutoff current  
IEB0  
–
–
20  
nA  
VEB = 4 V  
DC current gain 1)  
h
FE  
–
IC  
IC  
IC  
= 10 µA, VCE = 5 V  
20  
20  
40  
100  
140  
200  
300  
460  
–
–
–
–
BCW 60 A, BCX 70 G  
BCW 60 B, BCX 70 H  
BCW 60 FF, BCW 60 C, BCX 70 J  
BCW 60 FN, BCW 60 D, BCX 70 K  
= 2 mA, VCE = 5 V  
120  
180  
250  
380  
170  
250  
350  
500  
220  
310  
460  
630  
BCW 60 A, BCX 70 G  
BCW 60 B, BCX 70 H  
BCW 60 FF, BCW 60 C, BCX 70 J  
BCW 60 FN, BCW 60 D, BCX 70 K  
= 50 mA, VCE = 1 V  
50  
70  
90  
100  
–
–
–
–
–
–
–
–
BCW 60 A, BCX 70 G  
BCW 60 B, BCX 70 H  
BCW 60 FF, BCW 60 C, BCX 70 J  
BCW 60 FN, BCW 60 D, BCX 70 K  
1)  
Pulse test: t ≤ 300 µs, D ≤ 2 %.  
Semiconductor Group  
3
BCW 60  
BCX 70  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter saturation voltage1)  
VCEsat  
VBEsat  
VBE (on)  
V
–
–
0.12  
0.20  
0.25  
0.55  
I
C
= 10 mA, I  
B
= 0.25 mA  
= 1.25 mA  
IC  
= 50 mA, I  
B
Base-emitter saturation voltage1)  
–
–
0.70  
0.83  
0.85  
1.05  
I
C
= 10 mA, I  
B
= 0.25 mA  
= 1.25 mA  
IC  
= 50 mA, I  
B
Base-emitter voltage  
IC  
IC  
IC  
= 10 µA, VCE = 5 V  
= 2 mA, VCE = 5 V  
= 50 mA, VCE = 1 V 1)  
–
0.55  
–
0.52  
0.65  
0.78  
–
0.75  
–
AC characteristics  
Transition frequency  
f
T
–
–
–
250  
3
–
–
–
MHz  
pF  
I
C
= 20 mA, VCE = 5 V, f = 100 MHz  
Output capacitance  
CB = 10 V, f = 1 MHz  
Input capacitance  
EB = 0.5 V, f = 1 MHz  
Short-circuit input impedance  
C
obo  
ibo  
V
C
8
V
h
h
11e  
kΩ  
IC  
= 2 mA, VCE = 5 V, f = 1 kHz  
BCW 60 A, BCX 70 G  
BCW 60 B, BCX 70 H  
–
–
–
–
2.7  
3.6  
4.5  
7.5  
–
–
–
–
BCW 60 FF, BCW 60 C, BCX 70 J  
BCW 60 FN, BCW 60 D, BCX 70 K  
10– 4  
Open-circuit reverse voltage transfer ratio  
12e  
IC  
= 2 mA, VCE = 5 V, f = 1 kHz  
BCW 60 A, BCX 70 G  
BCW 60 B, BCX 70 H  
–
–
–
1.5  
2.0  
2.0  
3.0  
–
–
–
BCW 60 FF, BCW 60 C, BCX 70 J  
BCW 60 FN, BCW 60 D, BCX 70 K  
1)  
Pulse test: t ≤ 300 µs, D ≤ 2 %.  
Semiconductor Group  
4
BCW 60  
BCX 70  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
AC characteristics  
Short-circuit forward current transfer ratio  
h
h
21e  
–
IC  
= 2 mA, VCE = 5 V, f = 1 kHz  
BCW 60 A, BCX 70 G  
BCW 60 B, BCX 70 H  
–
–
–
–
200  
260  
330  
520  
–
–
–
–
BCW 60 FF, BCW 60 C, BCX 70 J  
BCW 60 FN, BCW 60 D, BCX 70 K  
Open-circuit output admittance  
22e  
µs  
IC  
= 2 mA, VCE = 5 V, f = 1 kHz  
BCW 60 A, BCX 70 G  
BCW 60 B, BCX 70 H  
–
–
–
–
18  
24  
30  
50  
–
–
–
–
BCW 60 FF, BCW 60 C, BCX 70 J  
BCW 60 FN, BCW 60 D, BCX 70 K  
Noise figure  
= 0.2 mA, VCE = 5 V, R  
f= 1 kHz, ∆f = 200 Hz  
F
V
dB  
IC  
S
= 2 kΩ  
BCW 60 A to BCX 70 K  
BCW 60 FF, BCW 60 FN  
–
–
2
1
–
2
Equivalent noise voltage  
= 0.2 mA, VCE = 5 V, R  
f= 10 Hz … 50 Hz  
BCW 60 FF, BCW 60 FN  
n
–
–
0.135 µV  
IC  
S
= 2 kΩ  
Semiconductor Group  
5
BCW 60  
BCX 70  
Total power dissipation Ptot = f (T  
* Package mounted on epoxy  
A
*; TS  
)
Collector-base capacitance CCB0 = f (VCB0  
Emitter-base capacitance CEB0 = f (VEB0  
)
)
Permissible pulse load Ptot max/Ptot DC = f (t  
p
)
Transition frequency f  
T
= f (I )  
C
V
CE = 5 V  
Semiconductor Group  
6
BCW 60  
BCX 70  
Base-emitter saturation voltage  
Collector-emitter saturation voltage  
IC  
= f (VBEsat  
)
IC  
= f (VCEsat)  
hFE = 40  
hFE = 40  
Collector current I  
C
= f (VBE  
)
DC current gain hFE = f (I )  
C
V
CE = 5 V  
VCE = 5 V  
Semiconductor Group  
7
BCW 60  
BCX 70  
Collector cutoff current ICB0 = f (T  
A
)
h parameter h  
e
= f (I )  
C
VCE = 5 V  
h parameter h  
= 2 mA  
e
= f (VCE  
)
Noise figure F = f (VCE  
)
I
C
IC  
= 0.2 mA, R = 2 kΩ, f = 1 kHz  
S
Semiconductor Group  
8
BCW 60  
BCX 70  
Noise figure F = f (f)  
= 0.2 mA, R = 2 kΩ,VCE = 5 V  
Noise figure F = f (I )  
C
IC  
S
V
CE = 5 V, f = 120 Hz  
Noise figure F = f (I  
C)  
Noise figure F = f (I )  
C
V
CE = 5 V, f = 1 kHz  
VCE = 5 V, f = 10 kHz  
Semiconductor Group  
9

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