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Q62702-C1692 [INFINEON]

PNP Silicon AF Transistors (For general AF applications High collector current High current gain); PNP硅晶体管自动对焦（一般自动对焦的应用高集电极电流高电流增益）
Q62702-C1692
型号： Q62702-C1692
厂家： Infineon    Infineon
描述：

PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
PNP硅晶体管自动对焦（一般自动对焦的应用高集电极电流高电流增益）

晶体 晶体管
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BC 847PN  
NPN/PNP Silicon AF Transistor Array  
• For AF input stages and driver applications  
• High current gain  
• Low collector-emitter saturation voltage  
• Two (galvanic) internal isolated NPN/PNP  
Transistors in one package  
Tape loading orientation  
PIN Configuration  
NPN-Transistor 1 = E 2 = B 6 = C  
Type  
Marking Ordering Code  
1Ps Q62702-C2374  
Package  
SOT-363 PNP-Transistor 4 = E 5 = B 3 = C  
BC 847PN  
Maximum Ratings  
Parameter  
Symbol  
Value  
45  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
DC collector current  
Peak collector current  
V
V
CEO  
V
50  
CBO  
V
50  
CES  
V
5
EBO  
I
100  
mA  
C
I
200  
CM  
Total power dissipation, T = 115 °C  
P
250  
mW  
°C  
S
tot  
Junction temperature  
Storage temperature  
T
150  
j
T
-65...+150  
stg  
Thermal Resistance  
Junction ambient 1)  
R
R
≤275  
≤140  
K/W  
thJA  
Junction - soldering point  
thJS  
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu  
Semiconductor Group  
1
May-12-1998  
BC 847PN  
Electrical Characteristicsat T =25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
45  
50  
50  
5
max.  
DC Characteristics per Transistor  
Collector-emitter breakdown voltage  
V
V
V
V
-
-
-
-
-
-
-
-
V
(BR)CEO  
(BR)CBO  
(BR)CES  
(BR)EBO  
CBO  
I = 10 mA, I = 0  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0  
C
B
Collector-emitter breakdown voltage  
I = 10 µA, V = 0  
-
C
BE  
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
-
E
C
Collector cutoff current  
= 30 V, I = 0  
I
-
15  
5
nA  
µA  
-
V
CB  
E
Collector cutoff current  
= 30 V, I = 0 , T = 150 °C  
I
-
CBO  
V
CB  
E
A
DC current gain 1)  
I = 10 µA, V = 5 V  
h
FE  
-
250  
290  
-
C
CE  
I = 2 mA, V = 5 V  
C
200  
630  
CE  
Collector-emitter saturation voltage1)  
I = 10 mA, I = 0.5 mA  
V
V
V
mV  
CEsat  
BEsat  
-
-
90  
300  
650  
C
B
I = 100 mA, I = 5 mA  
200  
C
B
Base-emitter saturation voltage 1)  
I = 10 mA, I = 0.5 mA  
-
-
700  
900  
-
-
C
B
I = 100 mA, I = 5 mA  
C
B
Base-emitter voltage 1)  
I = 2 mA, V = 5 V  
BE(ON)  
580  
-
660  
-
750  
820  
C
CE  
I = 10 mA, V = 5 V  
C
CE  
1) Pulse test: t < 300µs; D < 2%  
Semiconductor Group  
2
May-12-1998  
BC 847PN  
Electrical Characteristicsat T =25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
AC Characteristics per Transistor  
Transition frequency  
f
-
-
-
-
-
-
-
250  
2
-
-
-
-
-
-
-
MHz  
pF  
T
I = 20 mA, V = 5 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
C
cb  
V
CB  
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
10  
4.5  
2
eb  
V
EB  
Short-circuit input impedance  
I = 2 mA, V = 5 V, f = 1 kHz  
h
h
h
h
kΩ  
11e  
12e  
21e  
22e  
C
CE  
-4  
Open-circuit reverse voltage transfer ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
10  
C
CE  
Short-circuit forward current transfer ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
330  
30  
-
C
CE  
Open-circuit output admittance  
I = 2 mA, V = 5 V, f = 1 kHz  
µS  
C
CE  
Semiconductor Group  
3
May-12-1998  
BC 847PN  
Total power dissipationP = f (T *;T )  
tot  
A
S
* Package mounted on epoxy  
300  
mW  
T
S
P
tot  
200  
150  
100  
50  
T
A
0
°C  
0
20  
40  
60  
80  
100  
120  
150  
T ,T  
A
S
Permissible Pulse LoadR  
= f (t )  
Permissible Pulse Load  
thJS  
p
P
/ P  
= f (t )  
totmax  
totDC  
p
3
10 3  
10  
K/W  
-
2
10  
P
totmax  
/ P  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
R
thJS  
totDC  
10 2  
10 1  
10 0  
1
0
10  
10  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
0.2  
0.5  
10 -1  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Semiconductor Group  
4
May-12-1998  
BC 847PN  
Collector-base capacitätC = f (V  
)
Transition frequencyf = f (I )  
T C  
CB  
CBO  
Emitter-base capacitätCEB = f (V  
)
V
CE  
= 5V  
EBO  
Collector cutoff currentI  
= f (T )  
Collector-emitter saturation voltage  
I = f (V ), h = 20  
CBO  
A
V
= 30V  
CB  
C
CEsat  
FE  
Semiconductor Group  
5
May-12-1998  
BC 847PN  
DC current gain h = f (I )  
Base-emitter saturation voltage  
I = f (V ), h = 20  
FE  
C
V
CE  
= 5V  
C
BEsat  
FE  
h parameter h = f (I ) normalized  
h parameter h = f (V ) normalized  
e CE  
e
C
V
= 5V  
I = 2mA  
C
CE  
Semiconductor Group  
6
May-12-1998  

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