Q62702-C625 [INFINEON]
NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage); NPN硅晶体管自动对焦（高电流增益低集电极 - 发射极饱和电压）
| 型号： | Q62702-C625 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| 文件： | 总6页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon AF Transistors
BCX 58
BCX 59
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BCX 78, BCX 79 (PNP)
2
3
1
Package1)
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BCX 58 VIII
BCX 58 IX
BCX 58 X
BCX 59 VIII
BCX 59 IX
BCX 59 X
–
Q62702-C619
Q62702-C620
Q62702-C621
Q62702-C623
Q62702-C624
Q62702-C625
C
B
E
TO-92
Maximum Ratings
Parameter
Symbol
Values
Unit
BCX 58
32
BCX 59
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
45
45
V
32
7
I
I
I
C
100
200
200
500
150
mA
Peak collector current
Peak base current
CM
BM
Total power dissipation, T
C
= 70 ˚C Ptot
mW
˚C
Junction temperature
T
T
j
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
R
th JA
th JC
≤ 250
≤ 160
K/W
Junction - case2)
R
1)
For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
2)
5.91
Semiconductor Group
1
BCX 58
BCX 59
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 2 mA
BCX 58
BCX 59
32
45
–
–
–
–
Collector-base breakdown voltage
IC
= 10 µA
BCX 58
BCX 59
32
45
–
–
–
–
Emitter-base breakdown voltage
= 1 µA
7
–
–
IE
Collector cutoff current
ICB0
V
V
V
V
CB = 32 V
CB = 45 V
CB = 32 V, T
CB = 45 V, T
BCX 58
BCX 59
BCX 58
BCX 59
–
–
–
–
–
–
–
–
20
20
10
10
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
Collector cutoff current
I
CEX
EB0
µA
V
V
CE = 32 V, VBE = 0.2 V,T
CE = 45 V, VBE = 0.2 V,T
A
A
= 100 ˚C
= 100 ˚C
–
–
–
–
20
20
Emitter cutoff current
I
–
–
20
nA
–
VEB = 4 V
h
FE
DC current gain
IC
IC
IC
= 10 µA, VCE = 5 V
20
20
40
100
78
–
–
–
–
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
145
220
300
= 2 mA, VCE = 5 V
120
180
250
380
170
250
350
500
220
310
460
630
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
= 100 mA, VCE = 1 V1)
BCX 58 VII, BCX 59 VII
40
45
60
60
–
–
–
–
–
–
–
–
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
BCX 58
BCX 59
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter saturation voltage1)
VCEsat
VBEsat
VBE(on)
–
–
–
–
0.5
1.0
V
I
C
= 100 mA, I
Base-emitter saturation voltage1)
= 100 mA, I = 2.5 mA
Base-emitter voltage
B
= 2.5 mA
IC
B
IC
IC
IC
= 10 µA, VCE = 5 V
= 2 mA, VCE = 5 V
= 100 mA, VCE = 1 V 1)
–
0.55
–
0.52
0.65
0.83
–
0.75
–
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
BCX 58
BCX 59
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
–
–
–
200
3
–
–
–
MHz
pF
I
C
= 20 mA, VCE = 5 V, f = 100 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
CB = 0.5 V, f = 1 MHz
Short-circuit input impedance
= 2 mA, VCE = 5 V, f = 1 kHz
BCX 58 VII, BCX 59 VII
C
obo
ibo
V
C
8
V
h
h
h
h
11e
12e
21e
22e
kΩ
10–4
–
IC
–
–
–
–
2.7
3.6
4.5
7.5
–
–
–
–
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
Open-circuit reverse voltage transfer ratio
= 2 mA, VCE = 5 V, f = 1 kHz
BCX 58 VII, BCX 59 VII
IC
–
–
–
–
1.5
2.0
2.0
3.0
–
–
–
–
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
Short-circuit forward current transfer ratio
= 2 mA, VCE = 5 V, f = 1 kHz
BCX 58 VII, BCX 59 VII
IC
–
–
–
–
200
260
330
520
–
–
–
–
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
Open-circuit output admittance
= 2 mA, VCE = 5 V, f = 1 kHz
BCX 58 VII, BCX 59 VII
µS
dB
IC
–
–
–
–
18
24
30
50
–
–
–
–
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
Noise figure
= 0.2 mA, VCE = 5 V, R = 2 kΩ
F
–
2
–
IC
S
f= 1 kHz, ∆f = 200 Hz
Semiconductor Group
4
BCX 58
BCX 59
Total power dissipation Ptot = f (T
A
; TC)
Collector current I
C
= f (VBE)
VCE = 5 V (common emitter configuration)
Permissible pulse load RthJA = f (t
p)
DC current gain hFE = f (I
C
)
VCE = 5 V (common emitter configuration)
Semiconductor Group
5
BCX 58
BCX 59
Collector cutoff current ICB0 = f (T
A
)
Transition frequency f
T
= f (I )
C
V
CB = 45 V
VCE = 5 V, f = 100 MHz
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBEsat
)
IC
= f (VCEsat)
hFE = 20
h
FE = 20
Semiconductor Group
6
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