Q62702-F1124 [INFINEON]
NPN Silicon RF Transistor (For IF amplifiers in TV-sat tuners and for VCR modulators); NPN硅射频晶体管（用于IF放大器在电视总局调谐器和VCR调制器）
| 型号： | Q62702-F1124 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon RF Transistor (For IF amplifiers in TV-sat tuners and for VCR modulators) |
| 文件： | 总3页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF 770A
NPN Silicon RF Transistor
• For IF amplifiers in TV-sat tuners
and for VCR modulators
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BF 770A
LSs
Q62702-F1124
1 = B
2 = E
3 = C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
V
12
20
20
2
V
CEO
CES
CBO
EBO
I
I
50
6
mA
mW
°C
C
Base current
B
Total power dissipation
P
tot
≤
T
63 °C
300
S
Junction temperature
Ambient temperature
Storage temperature
T
T
T
150
j
- 65 ... + 150
- 65 ... + 150
A
stg
Thermal Resistance
1)
≤
Junction - soldering point
R
thJS
290
K/W
1) T is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group
1
Dec-12-1996
BF 770A
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CEO
I = 1 mA, I = 0
12
-
-
C
B
Collector-emitter cutoff current
= 20 V, V = 0
I
I
I
µA
nA
µA
-
CES
V
CE
-
-
100
100
10
BE
Collector-base cutoff current
= 10 V, I = 0
CBO
V
CB
-
-
E
Emitter-base cutoff current
= 2 V, I = 0
EBO
V
EB
-
-
C
DC current gain
I = 30 mA, V = 8 V
h
FE
50
100
200
C
CE
Semiconductor Group
2
Dec-12-1996
BF 770A
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
f
GHz
pF
T
I = 30 mA, V = 8 V, f = 500 MHz
4.5
6
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
C
F
cb
ce
eb
V
CB
-
-
-
0.55
0.23
1.7
0.9
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
CE
-
-
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Noise figure
dB
I = 5 mA, V = 8 V, Z = Z
C
CE
S
Sopt
f = 900 MHz
-
-
2
-
-
f = 1.8 GHz
Power gain
3.3
2)
G
ma
I = 30 mA, V = 8 V, Z = Z
Sopt
C
CE
S
Z = Z
L
Lopt
f = 900 MHz
f = 1.8 GHz
-
-
13.5
8.5
-
-
2
Transducer gain
|S
|
21e
Ω
I = 30 mA, V = 8 V, Z =Z = 50
C
CE
S
L
f = 900 MHz
-
-
12
-
-
f = 1.8 GHz
6.5
2
1/2
2) G = |S /S | (k-(k -1) )
ma
21 12
Semiconductor Group
3
Dec-12-1996
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