Q62702-P16 [INFINEON]
NPN-Silizium-Fototransistor Silicon NPN Phototransistor; NPN - Silizium - Fototransistor NPN硅光电晶体管
| 型号： | Q62702-P16 |
| 厂家： | 
Infineon |
| 描述： | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| 文件： | 总6页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BPX 43
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
Wesentliche Merkmale
Features
● Speziell geeignet für Anwendungen im
Bereich von 450 nm bis 1100 nm
● Hohe Linearität
● Especially suitable for applications from
450 nm to 1100 nm
● High linearity
● Hermetisch dichte Metallbauform (TO-18)
mit Basisanschluβ, geeignet bis 125 °C
● Gruppiert lieferbar
● Hermetically sealed metal package (TO-18)
with base connection suitable up to 125 °C
● Available in groups
Anwendungen
Applications
● Lichtschranken für Gleich- und
Wechsellichtbetrieb
● Industrieelektronik
● Photointerrupters
● Industrial electronics
● For control and drive circuits
● “Messen/Steuern/Regeln”
Typ
Type
Bestellnummer
Ordering Code
BPX43
Q62702-P16
BPX 43-2
BPX 43-3
BPX 43-4
BPX 43-5
Q62702-P16-S2
Q62702-P16-S3
Q62702-P16-S4
Q 62702-P16-S5
10.95
Semiconductor Group
223
BPX 43
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg
– 55 ... + 125
260
°C
Löttemperatur bei Tauchlötung
Lötstelle ≥ 2 mm vom Gehäuse,
Lötzeit t ≤ 5 s
Dip soldering temperature ≥ 2 mm distance
from case bottom, soldering time t ≤ 5 s
TS
°C
°C
Löttemperatur bei Kolbenlötung
Lötstelle ≥ 2 mm vom Gehäuse,
Lötzeit t ≤ 3 s
TS
300
Iron soldering temperature ≥ 2 mm distance
from case bottom, soldering time t ≤ 3 s
Kollektor-Emitterspannung
Collector-emitter voltage
VCE
IC
50
V
Kollektorstrom
Collector current
50
mA
mA
V
Kollektorspitzenstrom, τ < 10 µs
Collector surge current
ICS
200
7
Emitter-Basisspannung
Emitter-base voltage
VEB
Ptot
RthJA
Verlustleistung, TA = 25 °C
Total power dissipation
220
450
mW
K/W
Wärmewiderstand
Thermal resistance
Semiconductor Group
224
BPX 43
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max
880
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10 % von Smax
λ
450 ... 1100
nm
Spectral range of sensitivity
S = 10 % of Smax
2
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A
0.675
mm
Abmessung der Chipfläche
Dimensions of chip area
L × B
L × W
1 × 1
mm × mm
mm
Abstand Chipoberfläche zu Gehäuseober-
fläche
2.4 ... 3.0
H
Distance chip front to case surface
Halbwinkel
Half angle
ϕ
± 15
Grad
deg.
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
2
Ee = 0.5 mW/cm , VCB = 5 V
IPCB
IPCB
11
35
µA
µA
Ev = 1000 Ix, Normlicht/standard light A,
VCB = 5 V
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E = 0
VCB = 0 V, f = 1 MHz, E = 0
VEB = 0 V, f = 1 MHz, E = 0
CCE
CCB
CEB
23
39
47
pF
pF
pF
Dunkelstrom
ICEO
20 (≤ 300)
nA
Dark current
VCE = 25 V, E = 0
Semiconductor Group
225
BPX 43
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen
Ziffern gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished
by arabian figures.
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
-2
-3
-4
-5
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm , VCE = 5 V
2
IPCE
0.8 ... 1.6 1.25 ... 2.5 2.0 ... 4.0 ≥ 3.2 mA
Ev = 1000 Ix, Normlicht/standard light A, IPCE
VCE = 5 V
3.8
6.0
9.5
15.0 mA
Anstiegszeit/Abfallzeit
Rise and fall time
tr, tf
9
12
15
18 µs
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
Kollektor-Emitter-Sättigungsspannung VCEsat
200
110
220
170
240
270
260 mV
Collector-emitter saturation voltage
1)
IC = IPCEmin × 0.3
2
Ee = 0.5 mW/cm
Stromverstärkung
Current gain
Ee = 0.5 mW/cm , VCE = 5 V
IPCE
IPCB
430
2
1)
IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe
IPCEmin is the min. photocurrent of the specified group
1)
Semiconductor Group
226
BPX 43
Relative spectral sensitivity
= f (λ)
Photocurrent
= f (E ), V = 5 V
Total power dissipation
P = f (T )
tot
S
I
rel
PCE
e
CE
A
Output characteristics
= f (V ), I = Parameter
Output characteristics
= f (V ), I = Parameter
Dark current
I = f (V ), E = 0
CEO
I
I
C
CE
B
C
CE
B
CE
Photocurrent
/I
o = f (T ), V = 5 V
Dark current
/I
Collector-emitter capacitance
C = f (V ), f = 1 MHz, E = 0
CE
I
I
o = f (T ), V = 25 V, E = 0
PCE PCE25
A
CE
CEO CEO25
A
CE
CE
Semiconductor Group
227
BPX 43
Collector-base capacitance
= f (V ), f = 1 MHz, E = 0
Emitter-base capacitance
C
C
= f (V ), f = 1 MHz, E = 0
CB
CB
EB
EB
Directional characteristics S = f (ϕ)
rel
Semiconductor Group
228
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