Q62702-S482 [INFINEON]
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage); PNP硅开关晶体管（高直流电流增益低集电极 - 发射极饱和电压）
| 型号： | Q62702-S482 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
| 文件： | 总6页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon Switching Transistors
BSS 80
BSS 82
● High DC current gain
● Low collector-emitter saturation voltage
● Complementary types: BSS 79, BSS 81 (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BSS 80 B
BSS 80 C
BSS 82 B
BSS 82 C
CHs
CJs
CLs
CMs
Q62702-S557
Q62702-S492
Q62702-S560
Q62702-S482
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
BSS 80
BSS 82
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
40
60
V
V
60
V
5
I
I
I
I
C
800
1
mA
A
Peak collector current
Base current
CM
B
100
200
330
150
mA
Peak base current
BM
Total power dissipation, T
S
=77 ˚C
Ptot
mW
˚C
Junction temperature
Tj
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 290
≤ 220
K/W
R
Junction - soldering point
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BSS 80
BSS 82
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC
= 10 mA
BSS 80
BSS 82
40
60
–
–
–
–
Collector-base breakdown voltage
= 10 µA
V
(BR)CB0
(BR)EB0
60
–
–
IC
Emitter-base breakdown voltage
= 10 µA
V
5
–
–
IE
Collector-base cutoff current
I
CB0
EB0
VCB = 50 V
–
–
–
–
10
10
nA
µA
V
CB = 50 V, T
A
= 150 ˚C
Emitter-base cutoff current
I
–
–
10
nA
–
VEB = 3 V
DC current gain
h
FE
IC
IC
IC
IC
IC
= 100 µA, VCE = 10 V
= 1 mA, VCE = 10 V
= 10 mA, VCE = 10 V1)
= 150 mA, VCE = 10 V1)
= 500 mA, VCE = 10 V1)
BSS 80 B/82 B
BSS 80 C/82 C
BSS 80 B/82 B
BSS 80 C/82 C
BSS 80 B/82 B
BSS 80 C/82 C
BSS 80 B/82 B
BSS 80 C/82 C
BSS 80 B/82 B
BSS 80 C/82 C
40
75
40
100
40
100
40
100
40
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
120
300
–
50
–
Collector-emitter saturation voltage1)
V
CEsat
BEsat
V
–
–
–
–
0.4
1.6
I
C
= 150 mA, I
B
= 15 mA
= 50 mA
IC
= 500 mA, I
B
Base-emitter saturation voltage1)
V
–
–
–
–
1.3
2.6
I
C
= 150 mA, I
B
= 15 mA
= 50 mA
IC
= 500 mA, I
B
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BSS 80
BSS 82
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
–
–
250
6
–
–
MHz
pF
IC
= 20 mA, VCE = 20 V, f = 100 MHz
Open-circuit output capacitance
C
obo
V
CB = 10 V, f = 1 MHz
CC = 30 V, I = 150 mA, IB1 = 150 mA
V
C
Delay time
Rise time
t
t
d
r
–
–
–
–
10
40
ns
ns
V
CC = 6 V, I = 150 mA, IB1 = IB2 = 15 mA
C
Storage time
Fall time
t
t
stg
f
–
–
–
–
80
30
ns
ns
Test circuits
Delay and rise time
Storage and fall time
Semiconductor Group
3
BSS 80
BSS 82
Total power dissipation Ptot = f (T
A
*; TS
)
Collector-base capacitance Ccb = f (VCB)
* Package mounted on epoxy
f = 1 MHz
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 20 V
Semiconductor Group
4
BSS 80
BSS 82
Saturation voltage I
C
= f (VBE sat, VCE sat
)
Delay time t
Rise time t
d
r
= f (I
C
)
hFE = 10
= f (I )
C
Storage time tstg = f (I
C
)
Fall time t
f
= f (I )
C
Semiconductor Group
5
BSS 80
BSS 82
DC current gain hFE = f (I )
C
VCE = 10 V
Semiconductor Group
6
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