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Q62702-Z2027 [INFINEON]

NPN Silicon Switching Transistors; 硅NPN开关晶体管
Q62702-Z2027
型号： Q62702-Z2027
厂家： Infineon    Infineon
描述：

NPN Silicon Switching Transistors
硅NPN开关晶体管

晶体 开关 晶体管
文件： 总6页 (文件大小：130K)
中文：  中文翻译
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NPN Silicon Switching Transistors  
PZT 2222  
PZT 2222 A  
● High DC current gain: 0.1 mA to 500 mA  
● Low collector-emitter saturation voltage  
● Complementary types: PZT 2907 (PNP)  
PZT 2907 A (PNP)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
4
PZT 2222  
ZT 2222  
Q62702-Z2026  
B
C
E
C
SOT-223  
PZT 2222 A  
ZT 2222 A Q62702-Z2027  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
PZT 2222  
PZT 2222 A  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
VCE0  
VCB0  
VEB0  
30  
60  
5
40  
75  
6
V
Collector current  
I
C
600  
mA  
W
Total power dissipation, TS = 110 ˚C  
Junction temperature  
P
tot  
1.5  
T
j
150  
˚C  
Storage temperature range  
T
stg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
≤ 87  
≤ 27  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1
PZT 2222  
PZT 2222 A  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
V(BR)CE0  
V(BR)CB0  
V(BR)EB0  
V
IC  
= 10 mA, I  
B
= 0  
PZT 2222  
30  
40  
–
–
–
–
PZT 2222 A  
Collector-base breakdown voltage  
= 10 µA, I = 0  
IC  
B
PZT 2222  
60  
75  
–
–
–
–
PZT 2222 A  
Emitter-base breakdown voltage  
= 10 µA, I = 0  
IE  
E
PZT 2222  
5
6
–
–
–
–
PZT 2222 A  
Collector-base cutoff current  
I
CB0  
V
CB = 50 V, I  
E
= 0  
PZT 2222  
PZT 2222 A  
PZT 2222  
–
–
–
–
–
–
–
–
20  
10  
20  
10  
nA  
nA  
µA  
µA  
V
CB = 50 V, I  
E
= 0, T = 150 ˚C  
A
PZT 2222 A  
Emitter-base cutoff current  
= 0  
IEB0  
ICEV  
IEBV  
–
–
–
–
–
–
10  
50  
50  
nA  
V
EB = 3 V, I  
C
Collector-emitter cutoff current  
VCE = 30 V, – VBE = 0.5 V  
Emitter-base cutoff current  
VCE = 30 V, – VBE = 0.5 V  
DC current gain1)  
h
FE  
–
35  
50  
75  
100  
30  
40  
–
–
–
–
–
–
–
–
–
300  
–
IC  
IC  
IC  
IC  
IC  
= 0.1 mA, VCE = 10 V  
= 1 mA, VCE = 10 V  
= 10 mA, VCE = 10 V  
= 150 mA, VCE = 10 V  
= 500 mA, VCE = 10 V  
PZT 2222  
PZT 2222 A  
–
1)  
Pulse test conditions: t ≤ 300 µs, D = 2 %.  
Semiconductor Group  
2
PZT 2222  
PZT 2222 A  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter saturation voltage1)  
V
V
CEsat  
V
–
–
–
–
–
–
–
–
0.4  
0.3  
1.6  
1.0  
IC  
= 150 mA, I  
B
= 15 mA  
PZT 2222  
PZT 2222 A  
PZT 2222  
IC  
= 500 mA, I  
B
= 50 mA  
PZT 2222 A  
Base-emitter saturation voltage1)  
BEsat  
–
–
–
–
–
–
–
–
1.3  
1.2  
2.6  
2.0  
I
C
= 150 mA, I  
B
= 15 mA  
PZT 2222  
PZT 2222 A  
PZT 2222  
IC  
= 500 mA, I  
B
= 50 mA  
PZT 2222 A  
AC characteristics  
Transition frequency  
f
T
200  
–
–
–
–
–
MHz  
pF  
I
C
= 20 mA, VCE = 20 V, f = 100 MHz  
Collector-base capacitance  
CB = 10 V, f = 1 MHz  
Input capacitance  
C
obo  
ibo  
8
V
C
–
30  
VEB = 0.5 V, f = 1 MHz  
V
CC = 30 V, I  
C
= 150 mA, IB1 = 15 mA  
Delay time  
Rise time  
t
t
d
r
–
–
–
–
10  
25  
ns  
ns  
V
CC = 30 V, I  
C
= 150 mA, IB1 = IB2 = 15 mA  
Storage time  
Fall time  
t
t
stg  
f
–
–
–
–
225  
60  
ns  
ns  
(see diagrams)  
1)  
Pulse test conditions: t ≤ 300 µs, D = 2 %.  
Semiconductor Group  
3
PZT 2222  
PZT 2222 A  
Input waveform and test circuit for determining delay, rise and turn-on time  
Turn-on time when switched to ICon = 150 mA; IBon = 15 mA  
Input waveform and test circuit for determining storage, fall and turn-off time  
Turn-off time when switched to ICon = 150 mA; IBon = 15 mA to cut-off with – IBoff = 15 mA  
Pulse generator:  
Oscillograph:  
duty factor  
D = 2 %  
rise time  
tr ≤ 5 ns  
pulse duration  
rise time  
t
t
p
= 200 ns  
output impedance  
Zi = 10 MΩ  
r ≤ 2 ns  
output impedance  
Zo = 50Ω  
Semiconductor Group  
4
PZT 2222  
PZT 2222 A  
Total power dissipation Ptot = f (T  
A
*; TS  
)
Transition frequency f  
T
= f (I )  
C
* Package mounted on epoxy  
VCE = 20 V, f = 100 MHz  
Saturation voltage I  
C
= f (VBEsat, VCEsat  
)
DC current gain hFE = f (I )  
C
h
FE = 10  
VCE = 10 V  
Semiconductor Group  
5
PZT 2222  
PZT 2222 A  
Permissible pulse load Ptot max/Ptot DC = f (t )  
p
Semiconductor Group  
6

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