Q62702D1345 [INFINEON]
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications); HiRel它硅肖特基二极管（ HiRel它的离散和微波半导体中垒二极管检波器和混频器应用）
| 型号： | Q62702D1345 |
| 厂家： | 
Infineon |
| 描述： | HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
| 文件： | 总7页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiRel Silicon Schottky Diode
BAT 14
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ Medium barrier diodes for detector and mixer
applications
¥ Hermetically sealed microwave package
¥
qualified
¥ ESA/SCC Detail Spec. No.: 5106/014
T
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
T1
Type
Marking
Ordering Code
Pin Configuration
Package
BAT 14-013 (ql)
-
see below
T
BAT 14-014 (ql)
-
-
see below
see BAT14-013
T1
BAT 14-033 (ql)
BAT 14-034 (ql)
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-043 (ql)
BAT 14-044 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-063 (ql)
BAT 14-064 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-073 (ql)
BAT 14-074 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-093 (ql)
BAT 14-094 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-103 (ql)
BAT 14-104 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-113 (ql)
BAT 14-114 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-123 (ql)
BAT 14-124 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
Ordering Code: Q62702D1346
Ordering Code: on request
Ordering Code: on request
Ordering Code: Q62702D1345
ES: ESA Space Quality,
(see Chapter Order Instructions for ordering example)
Semiconductor Group
1
Draft A03 1998-04-01
BAT 14
Table 1
Maximum Ratings
Parameter
Symbol
Limit Values
Unit
V
Reverse voltage
VR
IF
3
Forward current
mA
BAT14-013, -014, -033, -034
100
100
50
50
50
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
Power dissipation
Ptot
mW
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
100
100
50
50
50
Operating temperature range
Storage temperature range
Soldering temperature
Top
Tstg
Tsol
EB
- 55 to + 150
- 65 to + 175
+ 220
°C
°C
°C
Erg
Burn-out energy 1)
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
5.0
5.0
2.0
2.0
1.0
1)
Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General
criterion for burn-out energy is a 3 dB increase in noise figure.
Semiconductor Group
2
Draft A03 1998-04-01
BAT 14
Electrical Characteristics
Table 2
DC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Breakdown voltage
IR = 10 mA
V(BR)
IR
3
-
-
V
Reverse current
VR = 2 V
-
-
1
mA
V
Forward voltage 1
VF1
IF1 = 0.01 mA
BAT14-013, -014, -033, -034
-
-
-
-
-
-
-
-
-
-
0.31
0.32
0.33
0.35
0.36
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
Forward voltage 2
IF2 = 1 mA
BAT14-013, -014, -033, -034
VF2
V
-
-
-
-
-
0.42
0.44
0.45
0.46
0.48
0.44
0.45
0.46
0.48
0.50
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
Series resistance 2)
RF
W
IF1 = 10 mA, IF2 = 50 mA
BAT14-013, -014
BAT14-033, -034
BAT14-043, -044
BAT14-063, -064
BAT14-073, -074
BAT14-093, -094
BAT14-103, -104
BAT14-113, -114
BAT14-123, -124
-
-
-
-
-
-
-
-
-
3.0
4.0
3.5
4.5
4.5
5.5
6.0
7.0
8.0
3.5
4.5
4.0
5.0
5.5
6.5
7.0
8.0
9.0
DVF
40 ´ 10Ð3
2)
------------------------
RF =
W
Semiconductor Group
3
Draft A03 1998-04-01
BAT 14
Table 3
AC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Total capacitance
CT
pF
VR = 0 V, f = 1 MHz
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
-
-
-
-
-
0.35
0.30
0.27
0.23
0.20
0.60
0.35
0.30
0.25
0.22
Noise figure
NF
dB
I.F. = 30 MHz
LO power = 0 dBm
LO = 9.375 GHz
BAT14-013, -014
BAT14-033, -034
BAT14-043, -044
BAT14-063, -064
BAT14-073, -074
BAT14-093, -094
BAT14-103, -104
BAT14-113, -114
BAT14-123, -124
-
-
-
-
-
-
-
-
-
5.3
6.3
5.3
6.3
5.3
6.3
5.7
7.2
8.0
5.5
6.5
5.5
6.5
5.5
6.5
6.0
7.5
9.0
Semiconductor Group
4
Draft A03 1998-04-01
BAT 14
Order Instructions
Full type variant including type variant and quality level must be specified by the orderer.
For HiRel Discrete and Microwave Semiconductors the ordering code specifies device
family and quality level only.
Ordering Form:
Ordering Code: QÉ
BAT14- (x) (ql)
(x): Type Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702D1345
BAT14-014 ES
For BAT14-014 in T1 Package; ESA Space Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
Ð HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
Semiconductor Group
5
Draft A03 1998-04-01
BAT 14
Figure 1
Symbol
T Package
Millimetre
max.
1.45
min.
1.30
1.15
-
A
B
C
1.35
0.4
Semiconductor Group
6
Draft A03 1998-04-01
BAT 14
Figure 2
Symbol
T1 Package
Millimetre
max.
1.45
1.35
0.40
0.50
0.30
0.10
-
min.
1.30
1.15
-
A
B
C
D
E
F
0.10
-
0.06
5.50
0.40
G
H
0.60
Semiconductor Group
7
Draft A03 1998-04-01
相关型号：
Q62702D1346
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications)
INFINEON
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