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Q62703-Q1429 [INFINEON]

5 mm (T1 3/4) LED, Non Diffused; 5毫米（ T1 3/4 ）的LED ，不扩散
Q62703-Q1429
型号： Q62703-Q1429
厂家： Infineon    Infineon
描述：

5 mm (T1 3/4) LED, Non Diffused
5毫米（ T1 3/4 ）的LED ，不扩散
文件： 总7页 (文件大小：354K)
中文：  中文翻译
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5 mm (T1 3/4) LED, Non Diffused  
LS 5420, LY 5420, LG 5410  
Besondere Merkmale  
● eingefärbtes, klares Gehäuse  
● zur Einkopplung in Lichtleiter  
● als optischer Indikator einsetzbar  
● Lötspieße ohne Aufsetzebene  
● gegurtet lieferbar  
● Störimpulsfest nach DIN 40839  
Features  
● colored, clear package  
● optical coupling into light pipes  
● for use as optical indicator  
● solder leads without stand-off  
● available taped on reel  
● load dump resistant acc. to DIN 40839  
Typ  
Type  
Emissionsfarbe Gehäusefarbe  
Lichtstärke  
Luminous  
Intensity  
Bestellnummer  
Ordering Code  
Color of  
Color of  
Package  
Emission  
IF = 10 mA  
IV (mcd)  
LS 5420-MQ  
LS 5420-P  
LS 5420-Q  
LS 5420-R  
LS 5420-PT  
super-red  
yellow  
red clear  
16 … 125  
40 … 80  
63 … 125  
100 … 200  
40 … 500  
Q62703-Q1428  
Q62703-Q1430  
Q62703-Q1993  
Q62703-Q1429  
Q62703-Q1431  
LY 5420-MQ  
LY 5420-P  
LY 5420-Q  
LY 5420-R  
LY 5420-PS  
yellow clear  
colorless clear  
16 … 125  
40 … 80  
63 … 125  
100 … 200  
40 … 320  
Q62703-Q1432  
Q62703-Q1434  
Q62703-Q2004  
Q62703-Q3235  
Q62703-Q1435  
LG 5410-MQ  
LG 5410-P  
LG 5410-Q  
LG 5410-R  
LG 5410-PS  
green  
16 … 125  
40 … 80  
63 … 125  
100 … 200  
40 … 320  
Q62703-Q1439  
Q62703-Q1868  
Q62703-Q2020  
Q62703-Q2021  
Q62703-Q2022  
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min ≤ 2.0.  
Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0.  
Semiconductor Group  
1
11.96  
LS 5420, LY 5420, LG 5410  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
Betriebstemperatur  
Operating temperature range  
T
– 55 … + 100  
˚C  
˚C  
˚C  
mA  
A
op  
Lagertemperatur  
Storage temperature range  
T
stg  
– 55 … + 100  
Sperrschichttemperatur  
Junction temperature  
T
j
+ 100  
40  
Durchlaßstrom  
Forward current  
IF  
Stoßstrom  
IFM  
0.5  
Surge current  
t ≤ 10 µs, D = 0.005  
Sperrspannung  
Reverse voltage  
VR  
5
V
Verlustleistung  
Power dissipation  
TA ≤ 25 ˚C  
P
tot  
140  
mW  
Wärmewiderstand  
Thermal resistance  
Sperrschicht / Luft  
Junction / air  
Rth JA  
400  
K/W  
Semiconductor Group  
2
LS 5420, LY 5420, LG 5410  
Kennwerte (TA = 25 ˚C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS  
LY  
LG  
Wellenlänge des emittierten Lichtes (typ.) λpeak  
635  
586  
590  
45  
565  
nm  
nm  
nm  
Wavelength at peak emission  
(typ.)  
IF = 20 mA  
Dominantwellenlänge  
Dominant wavelength  
IF = 20 mA  
(typ.) λdom  
(typ.)  
628  
45  
570  
25  
Spektrale Bandbreite bei 50 % Irel max (typ.) ∆λ  
Spectral bandwidth at 50 % Irel max  
IF = 20 mA  
(typ.)  
Abstrahlwinkel bei 50 % IV (Vollwinkel)  
Viewing angle at 50 % IV  
2ϕ  
24  
24  
24  
Grad  
deg.  
Durchlaßspannung  
Forward voltage  
IF = 10 mA  
(typ.) VF  
(max.) VF  
2.0  
2.6  
2.0  
2.0  
2.0  
2.6  
V
V
Sperrstrom  
Reverse current  
VR = 5 V  
(typ.) IR  
(max.) IR  
0.01  
10  
0.01  
10  
0.01  
10  
µA  
µA  
Kapazität  
(typ.) C0  
12  
10  
15  
pF  
Capacitance  
VR = 0 V, ƒ = 1 MHz  
Schaltzeiten:  
Switching times:  
IV from 10 % to 90 %  
IV from 90 % to 10 %  
IF = 100 mA, tP = 10 µs, RL = 50 Ω  
(typ.) tr  
(typ.) tf  
300  
150  
300  
150  
450  
200  
ns  
ns  
Semiconductor Group  
3
LS 5420, LY 5420, LG 5410  
Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 20 mA  
Relative spectral emission  
V (λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
Abstrahlcharakteristik Irel = f (ϕ)  
Radiation characteristic  
Semiconductor Group  
4
LS 5420, LY 5420, LG 5410  
Durchlaßstrom IF = f (VF)  
Forward current  
TA = 25 ˚C  
Relative Lichtstärke IV/IV(10 mA) = f (IF)  
Relative luminous intensity  
TA = 25 ˚C  
Zulässige Impulsbelastbarkeit IF = f (tP)  
Permissible pulse handling capability  
Duty cycle D = parameter, TA = 25 ˚C  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
IF = f (TA)  
Semiconductor Group  
5
LS 5420, LY 5420, LG 5410  
Wellenlänge der Strahlung λpeak = f (TA)  
Wavelength at peak emission  
IF = 20 mA  
Dominantwellenlänge λdom = f (TA)  
Dominant wavelength  
IF = 20 mA  
Durchlaßspannung VF = f (TA)  
Forward voltage  
IF = 10 mA  
Relative Lichtstärke IV/IV(25 °C) = f (TA)  
Relative luminous intensity  
IF = 10 mA  
Semiconductor Group  
6
LS 5420, LY 5420, LG 5410  
Maßzeichnung  
Package Outlines  
(Maße in mm, wenn nicht anders angegeben)  
(Dimensions in mm, unless otherwise specified)  
Kathodenkennzeichnung:  
Cathode mark:  
Kürzerer Lötspieß  
Short solder lead  
Semiconductor Group  
7

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