Q62703-Q2846 [INFINEON]
SIDELED; SIDELED
| 型号： | Q62703-Q2846 |
| 厂家： | 
Infineon |
| 描述： | SIDELED |
| 文件： | 总8页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIDELED®
LS A670, LO A670, LY A670
LG A670, LP A670
Besondere Merkmale
● Gehäusefarbe: weiß
● als optischer Indikator einsetzbar
● zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
● für alle SMT-Bestück- und Reflow-Löttechniken geeignet
● gegurtet (12-mm-Filmgurt)
● Störimpulsfest nach DIN 40839
Features
● color of package: white
● for use as optical indicator
● for backlighting, optical coupling into light pipes and lenses
● suitable for all SMT assembly and reflow soldering methods
● available taped on reel (12 mm tape)
● load dump resistant acc. to DIN 40839
Semiconductor Group
1
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Typ
Emissions- Farbe der
Lichtstärke Lichtstrom
Bestellnummer
Ordering Code
farbe
Lichtaustritts-
fläche
Type
Color of
Color of the
Luminous
Luminous
Flux
Emission
Light Emitting Intensity
Area
I = 10 mA
F
I = 10 mA
F
IV (mcd)
ΦV (mlm)
LS A670-HL
LS A670-J
LS A670-K
LS A670-L
LS A670-JM
super-red
orange
colorless clear
2.5 ... 20.0 -
Q62703-Q3908
Q62703-Q2833
Q62703-Q2834
Q62703-Q3840
Q62703-Q2835
4.0 ... 8.0 18 (typ.)
6.3 ... 12.5 30 (typ.)
10.0 ... 20.0 45 (typ.)
4.0 ... 32.0 -
LO A670-HK
LO A670-J
LO A670-K
LO A670-L
LO A670-JM
colorless clear
colorless clear
colorless clear
colorless clear
2.5 ... 12.5 -
Q62703-Q2547
Q62703-Q2837
Q62703-Q3204
Q62703-Q2836
Q62703-Q2838
4.0 ... 8.0 18 (typ.)
6.3 ... 12.5 30 (typ.)
10.0 ... 20.0 45 (typ.)
4.0 ... 32.0 -
LY A670-HK
LY A670-J
LY A670-K
LY A670-L
LY A670-JM
yellow
2.5 ... 12.5 -
Q62703-Q2552
Q62703-Q2839
Q62703-Q2840
Q62703-Q3920
Q62703-Q2841
4.0 ... 8.0 18 (typ.)
6.3 ... 12.5 30 (typ.)
10.0 ... 20.0 45 (typ.)
4.0 ... 32.0 -
LG A670-HK
LG A670-J
LG A670-K
LG A670-L
LG A670-JM
green
2.5 ... 12.5 -
Q62703-Q2543
Q62703-Q2842
Q62703-Q2843
Q62703-Q3192
Q62703-Q2844
4.0 ... 8.0 18 (typ.)
6.3 ... 12.5 30 (typ.)
10.0 ... 20.0 45 (typ.)
4.0 ... 32.0 -
LP A670-FJ
LP A670-G
LP A670-H
LP A670-J
LP A670-GK
pure green
1.0 ... 8.0 -
Q62703-Q2549
Q62703-Q2845
Q62703-Q2846
Q62703-Q3214
Q62703-Q2847
1.6 ... 3.2 8 (typ.)
2.5 ... 5.0 12 (typ.)
4.0 ... 8.0 18 (typ.)
1.6 ... 12.5 -
Streuung der Lichtstärke in einer Verpackungseinheit IV min/ IV min ≤ 2.0.
Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0.
Semiconductor Group
2
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
Top
Tstg
Tj
– 55 ... + 100
– 55 ... + 100
+ 100
˚C
˚C
˚C
mA
A
Lagertemperatur
Storage temperature range
Sperrschichttemperatur
Junction temperature
Durchlaßstrom
Forward current
IF
30
Stoßstrom
IFM
0.5
Surge current
t ≤ 10 µs, D = 0.005
Sperrspannung
Reverse voltage
VR
5
V
Verlustleistung
Power dissipation
Ptot
100
430
mW
K/W
Wärmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Montage auf PC-board*) (Padgröße je ≥ 16 mm )
mounted on PC board*) (pad size ≥ 16 mm each)
Rth JA
2
2
*) PC-board: FR4
Semiconductor Group
3
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Kennwerte (TA = 25 ˚C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS LO LY LG LP
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
IF = 10 mA
(typ.) λpeak
(typ.)
635 610 586 565 557 nm
628 605 590 570 560 nm
Dominantwellenlänge
Dominant wavelength
IF = 10 mA
(typ.) λdom
(typ.)
Spektrale Bandbreite bei 50 % Irel max
Spectral bandwidth at 50 % Irel max
IF = 10 mA
(typ.) ∆λ
(typ.)
45
40
45
25
22
nm
Abstrahlwinkel bei 50 % Iv (Vollwinkel)
Viewing angle at 50 % Iv
2ϕ
120 120 120 120 120 Grad
deg.
Durchlaßspannung
Forward voltage
IF = 10 mA
(typ.) VF
(max.) VF
2.0 2.0 2.0 2.0 2.0
2.6 2.6 2.6 2.6 2.6
V
V
Sperrstrom
Reverse current
VR = 5 V
(typ.) IR
(max.) IR
0.01 0.01 0.01 0.01 0.01 µA
10
10
10
10
10
µA
Kapazität
(typ.) C0
12
8
10
15
15
pF
Capacitance
VR = 0 V, f = 1 MHz
Schaltzeiten:
Switching times:
IV from 10 % to 90 %
IV from 90 % to 10 %
IF = 100 mA, tp = 10 µs, RL = 50 Ω
(typ.) tr
(typ.) tf
300 300 300 450 450 ns
150 150 150 200 200 ns
Semiconductor Group
4
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Relative spektrale Emission I = f (λ), TA = 25 ˚C, I = 10 mA
rel
F
Relative spectral emission
V(λ) = spektrale Augenempfindlichkeit
Standard eye response curve
OHL01698
100
%
Ιrel
80
V
λ
60
40
20
0
400
450
500
550
600
650
700
nm
λ
Abstrahlcharakteristik I = f (ϕ)
rel
Radiation characteristic
OHL01660
40˚
30˚
20˚
10˚
0˚
1.0
ϕ
50˚
0.8
0.6
0.4
0.2
0
60˚
70˚
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
Semiconductor Group
5
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Durchlaßstrom I = f (VF)
Relative Lichtstärke IV/IV(10 mA) = f (IF)
F
Forward current
Relative luminous intensity
TA = 25 ˚C
TA = 25 ˚C
OHL02146
OHL02145
10 1
10 2
Ι F
Ι V
mA
Ι V (10 mA)
10 0
5
10 1
5
10 -1
5
pure-green
10 0
5
green
red
yellow
super-red
orange
pure-green
10 -2
5
super-red
orange/yellow
green
10 -3
10
10 -1
-1
0
1
2
1.0
1.4
1.8
2.2
2.6
3.0
3.4
V
mA
5
10
5
10
10
Ι F
VF
Zulässige ImpulsbelastbarkeitI = f (tp)
Permissible pulse handling capability
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
F
Duty cycle D = parameter, TA = 25 ˚C
I = f (TA)
F
OHL01661
OHL01686
10 3
60
t P
mA
Ι F
t P
T
Ι F
ΙF
D
=
mA
T
50
40
30
20
10
0
D
=
0.005
0.01
0.02
0.05
0.1
10 2
5
0.2
0.5
DC
10 1
10-5
10-4 10-3 10-2 10-1
100 s 101
t p
0
20
40
60
80 ˚C 100
TA
Semiconductor Group
6
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Wellenlänge der Strahlung λpeak = f (TA)
Dominantwellenlänge λdom = f (TA)
Wavelength at peak emission
Dominant wavelength
I = 10 mA
F
I = 10 mA
F
OHL02104
OHL02105
690
nm
690
λ peak
λ dom
nm
650
630
610
590
570
550
650
super-red
orange
yellow
super-red
630
610
590
570
550
orange
yellow
green
green
pure-green
pure-green
0
20
40
60
80 ˚C 100
0
20
40
60
80 ˚C 100
TA
TA
Durchlaßspannung VF = f (TA)
Relative Lichtstärke IV / IV(25 ˚C ) = f (TA)
Forward voltage
Relative luminous intensity
I = 10 mA
F
I = 10 mA
F
OHL02106
OHL02150
2.4
2.0
1.6
1.2
0.8
0.4
0.0
VF
V
Ι V
Ι V (25 ˚C)
2.2
2.0
yellow
green
green
super-red
orange
yellow
1.8
orange
super-red
pure-green
pure-green
1.6
1.4
0
20
40
60
80 ˚C 100
0
20
40
60
80 ˚C 100
TA
TA
Semiconductor Group
7
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Maßzeichnung
(Maße in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
(2.4)
(2.85)
1.1
0.9
2.54
spacing
Cathode
Anode
(1.4)
Cathode marking
(R1)
4.2
3.8
Kathodenkennung:
Cathode mark:
abgeschrägte Ecke
bevelled edge
Semiconductor Group
8
1998-11-12
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