Q67000-S118 [INFINEON]
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level); SIPMOS小信号晶体管（ N沟道增强模式的逻辑电平）
| 型号： | Q67000-S118 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
| 文件： | 总7页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS 297
®
SIPMOS Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
= 0.8...2.0V
GS(th)
Pin 1
G
Pin 2
D
Pin 3
S
Type
V
I
R
Package
Marking
DS
D
DS(on)
Ω
BSS 297
200 V
0.48 A
2
TO-92
SS 297
Type
BSS 297
BSS 297
Ordering Code
Q67000-S118
Q67000-S292
Tape and Reel Information
E6288
E6325
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
V
V
200
V
DS
DGR
Ω
R
= 20 k
200
GS
Gate source voltage
V
V
± 14
GS
±
Gate-source peak voltage,aperiodic
Continuous drain current
20
gs
I
A
D
T = 25 °C
0.48
1.92
1
A
DC drain current, pulsed
I
Dpuls
T = 25 °C
A
Power dissipation
P
W
tot
T = 25 °C
A
Semiconductor Group
1
12/05/1997
BSS 297
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
T
-55 ... + 150 °C
-55 ... + 150
j
T
stg
1)
Thermal resistance, chip to ambient air
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
≤ 125
K/W
thJA
E
55 / 150 / 56
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at T
j
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
= 0 V, I = 0.25 mA, T = 25 °C
V
V
V
(BR)DSS
GS(th)
DSS
V
200
0.8
-
-
GS
D
j
Gate threshold voltage
=V I = 1 mA
V
1.4
2
GS DS, D
Zero gate voltage drain current
I
V
V
V
= 200 V, V = 0 V, T = 25 °C
-
-
-
0.1
1
µA
DS
DS
DS
GS
j
= 200 V, V = 0 V, T = 125 °C
8
-
50
100
GS
j
= 130 V, V = 0 V, T = 25 °C
nA
nA
GS
j
Gate-source leakage current
= 20 V, V = 0 V
I
GSS
V
-
10
100
GS
DS
Ω
Drain-Source on-state resistance
R
DS(on)
V
= 10 V, I = 0.45 A
-
-
0.95
1.1
2
GS
GS
D
V
= 4.5 V, I = 0.45 A
3.3
D
Semiconductor Group
2
12/05/1997
BSS 297
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at T
j
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
S
fs
V
≥ 2 I
R I = 0.45 A
0.5
0.85
300
40
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
pF
iss
V
-
-
-
400
60
30
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
oss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
rss
V
20
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 0.29 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R = 50
-
-
-
-
8
12
G
Rise time
= 30 V, V = 10 V, I = 0.29 A
r
V
DD
GS
D
Ω
R = 50
15
120
50
25
G
Turn-off delay time
= 30 V, V = 10 V, I = 0.29 A
d(off)
V
DD
GS
D
Ω
R = 50
160
70
G
Fall time
f
V
= 30 V, V = 10 V, I = 0.29 A
GS D
DD
R = 50 Ω
G
Semiconductor Group
3
12/05/1997
BSS 297
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at T
j
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
0.48
1.92
1.1
A
Inverse diode direct current,pulsed
I
SM
T = 25 °C
-
A
Inverse diode forward voltage
V
V
SD
V
= 0 V, I = 0.96 A
0.85
GS
F
Semiconductor Group
4
12/05/1997
BSS 297
Power dissipation
Drain current
ƒ
ƒ
T
D = (
P
T
I
tot = (
)
)
A
A
≥
V
parameter:
10 V
GS
0.50
A
1.2
W
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.40
ID
Ptot
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.1
0.0
0.00
0
0
20
40
60
80 100 120 °C 160
TA
20
40
60
80 100 120 °C 160
TA
I
V
DS
D=f(
)
Safe operating area
Drain-source breakdown voltage
D
T
ƒ
parameter : = 0.01, C=25°C
V
T
(BR)DSS = ( )
j
240
V
230
V(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100
°C
Tj
160
Semiconductor Group
5
12/05/1997
BSS 297
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
ID
VDS
RDS (on)
ID
)
=
)
=
t
T
t
T
parameter: p = 80 µs ,
= 25 °C
parameter: p = 80 µs, j = 25 °C
j
l
i
6.5
1.1
A
P
tot = 1W
g
k
Ω
d
e
f
a
b
c
5.5
V
[V]
GS
a
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
ID
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0
7.0
8.0
9.0
10.0
RDS (on)
5.0
b
c
d
e
f
b
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
g
h
i
j
a
k
l
c
d
l k
e
f
g
h
i
j
V
[V] =
b
GS
a
c
d
e
f
g
h
i
j
k
l
0.1
0.0
0.5
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0
9.0 10.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
A
0.9
VDS
ID
I = f V
g
Typ. forward transconductance
fs
f I
= ( )
Typ. transfer characteristics
(
)
D
GS
D
t
t
p
parameter: = 80 µs
parameter: = 80 µs,
p
V
I
R
V
I
R
x
DS(on)max
≥ 2 x
x
≥2 x
DS
D
DS(on)max
DS
D
1.8
S
2.2
A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
ID
gfs
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0
1
2
3
4
5
6
7
8
V
10
0.0
0.4
0.8
1.2
1.6
A
ID
2.2
VGS
Semiconductor Group
6
12/05/1997
BSS 297
Drain-source on-resistance
Gate threshold voltage
ƒ
ƒ
T
GS (th) = ( )
j
R
T
V
DS (on) = ( )
j
I
V
V
V I
, D = 1 mA
DS
parameter: D = 0.45 A, GS = 10 V
parameter:
=
GS
5.0
4.6
V
Ω
4.0
4.0
RDS (on)
VGS(th)
3.6
3.5
3.0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
98%
2.5
98%
typ
2.0
1.5
typ
2%
1.0
0.5
0.0
0.0
-60
-60
-20
20
60
100
°C
Tj
160
-20
20
60
100
°C
Tj
160
Typ. capacitances
C f V
Forward characteristics of reverse diode
ƒ
= (
)
I
V
F = (
)
DS
SD
T , t
parameter:
p = 80 µs
V
f
=0V, = 1 MHz
parameter:
j
GS
10 3
10 1
pF
A
Ciss
C
IF
10 2
10 0
Coss
Crss
10 1
10 -1
T
T
T
T
j = 25 °C typ
j = 150 °C typ
j = 25 °C (98%)
j = 150 °C (98%)
10 0
0
10 -2
0.0
5
10
15
20
25
30
V
VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
V
VSD
3.0
7
12/05/1997
Semiconductor Group
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