Q67006-A9358 [INFINEON]
Low-Drop Voltage Regulator; 低压差稳压器
| 型号： | Q67006-A9358 |
| 厂家： | 
Infineon |
| 描述： | Low-Drop Voltage Regulator |
| 文件： | 总16页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low-Drop Voltage Regulator
Features
TLE 4276
• Output voltage tolerance ≤ ± 4%
• Low-drop voltage
• Inhibit input
• Very low current consumption
• Short-circuit-proof
• Reverse polarity proof
• Suitable for use in automotive electronics
P-TO220-5-3
Type
Ordering Code Package
TLE 4276 V50
TLE 4276 V85
TLE 4276 V10
Q67000-A9262 P-TO220-5-3
Q67000-A9263 P-TO220-5-3
Q67000-A9264 P-TO220-5-3
TLE 4276 G V50 Q67006-A9266 P-TO220-5-122
TLE 4276 G V85 Q67006-A9268 P-TO220-5-122
TLE 4276 G V10 Q67006-A9270 P-TO220-5-122
TLE 4276 S V50 Q67000-A9267 P-TO220-5-43
TLE 4276 S V85 Q67000-A9269 P-TO220-5-43
TLE 4276 S V10 Q67000-A9271 P-TO220-5-43
P-TO220-5-43
TLE 4276 V
TLE 4276 SV
TLE 4276 GV
Q67000-A9265 P-TO220-5-3
Q67000-A9273 P-TO220-5-43
Q67006-A9272 P-TO220-5-122
P-TO220-5-122
▼ TLE 4276 D V50 Q67006-A9358 P-TO252-5-1
▼ TLE 4276 DV Q67006-A9361 P-TO252-5-1
SMD = Surface Mounted Device
▼ New type
P-TO252-5-1 (D-PAK)
Semiconductor Group
1
1998-11-01
TLE 4276
Functional Description
The TLE 4276 is a low-drop voltage regulator in a TO220 package. The IC regulates an
input voltage up to 40 V to VQrated = 5.0 V (V50), 8.5 V (V85), 10 V (V10) and adjustable
voltage (V). The maximum output current is 400 mA. The IC can be switched off via the
inhibit input, which causes the current consumption to drop below 10 µA. The IC is short-
circuit-proof and incorporates temperature protection that disables it at over-tempera-
ture.
Dimensioning Information on External Components
The input capacitor CI is necessary for compensating line influences. Using a resistor of
approx. 1 Ω in series with CI, the oscillating of input inductivity and input capacitance can
be damped. The output capacitor CQ is necessary for the stability of the regulation circuit.
Stability is guaranteed at values CQ ≥ 22 µF and an ESR of ≤ 3 Ω within the operating
temperature range.
Circuit Description
The control amplifier compares a reference voltage to a voltage that is proportional to the
output voltage and drives the base of the series transistor via a buffer. Saturation control
as a function of the load current prevents any oversaturation of the power element. The
IC also incorporates a number of internal circuits for protection against:
• Overload
• Overtemperature
• Reverse polarity
Semiconductor Group
2
1998-11-01
TLE 4276
Pin Configuration
(top view)
P-TO220-5-3
P-TO220-5-43
P-TO220-5-122
P-TO252-5-1
GND
1
5
1
5
Ι
Q
INH N.C.
(VA)
5
1
5
1
Ι
Q
GND
AEP02560
INH N.C.
AEP02043
Ι
Q
GND
INH N.C.
(VA)
Ι
Q
GND
AEP02041
INH N.C.
(VA)
AEP02042
Figure 1
Pin Definitions and Functions
Pin No. Symbol Function
1
2
3
4
I
Input; block to ground directly at the IC with a ceramic capacitor.
INH
GND
Inhibit; low-active input
Ground
N.C.
VA
Not connected for V50, V85, V10
Voltage Adjust Input; only for adjustable output from external
voltage divider.
5
Q
Output; block to ground with a ≥ 22 µF capacitor.
Semiconductor Group
3
1998-11-01
TLE 4276
Saturation
Control and
Protection
Circuit
Temperature
Sensor
1
6
Q
Ι
Control
Amplifier
Buffer
Bandgap
Reference
*)
**)
4
2
3
INH
VA
GND
*) For fixed Voltage Regulator only
**) For adjustable Voltage Regulator only
AEB02044
Figure 2
Block Diagram
Semiconductor Group
4
1998-11-01
TLE 4276
Absolute Maximum Ratings
Tj = – 40 to 150 °C
Parameter
Symbol
Limit Values
Unit Test Condition
min.
max.
Voltage Regulator
Input
Voltage
Current
VI
II
– 42
–
45
–
–
V
Internally limited
–
Inhibit
Voltage
VINH
– 42
45
10
V
V
–
–
Voltage Adjust Input
Voltage
VVA
– 0.3
Output
Voltage
Current
VQ
IQ
– 1.0
–
40
–
V
–
–
Internally limited
Ground
Current
IGND
–
100
mA
–
Temperature
Junction temperature
Storage temperature
Tj
–
150
150
°C
°C
–
–
Tstg
– 50
Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the integrated circuit.
Semiconductor Group
5
1998-11-01
TLE 4276
Operating Range
Parameter
Symbol
Limit Values
min. max.
VQ + 0.5 40
Unit Remarks
Input voltage
VI
Tj
–
–
V
Junction temperature
– 40
150
°C
Thermal Resistance
Junction ambient
Junction ambient
Junction case
Rthja
Rthja
Rthjc
–
–
–
65
70
4
K/W TO220
K/W TO2521), TO263
K/W –
1) Soldered in, minimal footprint
Characteristics
VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified)
Parameter
Symbol
Limit Values
Unit Measuring
Condition
Measuring
Circuit
min. typ. max.
Output voltage VQ
Output voltage VQ
Output voltage VQ
4.8
5
5.2
V50-Version
5 mA < IQ < 400 mA
6 V < VI < 40 V
1
1
1
V
V
V
8.16 8.5
8.84
10.4
V85-Version
5 mA < IQ < 400 mA
9.5 V < VI < 40 V
9.6
– 4
10
V10-Version
5 mA < IQ < 400 mA
11 V < VI < 40 V
Outputvoltage
tolerance
4
%
V-Version
VV.A.= 2.5 V
1
1
1
∆VQ
Output current IQ
400 600
–
mA
µA
–
limitation1)
Current
consumption;
Iq = II – IQ
Iq
Iq
–
–
0
10
VINH = 0 V;
Tj ≤ 100 °C
Current
100 220 µA
IQ = 1 mA
1
consumption;
Iq = II – IQ
Semiconductor Group
6
1998-11-01
TLE 4276
Characteristics (cont’d)
VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified)
Parameter
Symbol
Limit Values
Unit Measuring
Condition
Measuring
Circuit
min. typ. max.
Current
consumption;
Iq = II – IQ
Drop voltage1) VDR
Iq
Iq
–
5
10
mA IQ = 250 mA
1
15
25
mA IQ = 400 mA
1
1
–
–
–
–
–
250 500 mV IQ = 250 mA
VDR = VI – VQ
Load
regulation
5
35
25
–
mV IQ = 5 mA to
1
∆VQ
400 mA
Line
regulation
10
60
0.5
mV ∆Vl = 12 V to 32V
IQ = 5 mA
1
∆VQ
Power supply
ripple rejection
dB
fr = 100 Hz;
Vr = 0.5 VSS
1
PSRR
Temperature
output voltage
drift
–
–
–
mV/K
dVQ
dT
1) Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V.
Inhibit
Inhibit on
voltage
–
2
3.5
–
V
VQ ≥ 4.9 V
VQ ≤ 0.1 V
1
1
1
VINH
VINH
Inhibit off
voltage
0.5
5
1.7
10
V
Input current IINH
20
µA
VINH = 5 V
Semiconductor Group
7
1998-11-01
TLE 4276
Ι Ι
Ι Q
Input
V
Output
1
5
C
Q
100 µF
100 nF
22 µF
R *)
1
TLE 4276
Ι INH
*)
4
2
R
Ι
L
Voltage
Adjust
V
Q
V
INH
3
R *)
2
*) Optional for adjustable Voltage Regulator
AES02045
Figure 3
Measuring Circuit
Output
5
1
Input
C
C
R *)
Ι
Q
1
TLE 4276
*)
2
e.g. KL 15
4
Voltage
Adjust
3
R *)
2
*) Optional for adjustable Voltage Regulator
AES02046
Figure 4
Application Circuit
Semiconductor Group
8
1998-11-01
TLE 4276
Typical Performance Characteristics (V50, V85 and V10):
Drop Voltage VDR versus
Output Current IQ
Max. Output Current IQ versus
Input Voltage VI
AED01963
AED01962
800
600
mV
mA
V
dr
Ι
Q
600
T = 125
C
j
400
300
200
100
0
T
= 25 C
j
V
= 0 V
Q
400
200
0
T = 25
C
j
=
V
V
QNOM-0.1 V
dr
0
10
20
30
40
50
V
0
100
200
300
400
mA
V
Ι
Ι
Q
Current Consumption Iq versus
Output Current IQ (high load)
Current Consumption Iq versus
Output Current IQ (low load)
AED01965
AED01964
0.6
60
mA
mA
T j = 25 C
Ι q
T j = 25 C
Ι q
V Ι = 13.5 V
V Ι = 13.5 V
0.4
0.3
0.2
0.1
0
40
30
20
10
0
0
10
20
30
40
60
mA
0
100 200 300 400
600
mA
Ι Q
Ι Q
Semiconductor Group
9
1998-11-01
TLE 4276
Typical Performance Characteristics for V50:
Output Voltage VQ versus
Temperature Tj
Current Consumption Iq versus
Input Voltage VI
AED01967
AED01966
30
5.20
V
V
mA
Q
5.10
Ι q
V = 13.5 V
Ι
20
10
0
5.00
4.90
4.80
4.70
4.60
T j = 25 C
RL 20
=
Ω
0
10
20
30
50
V
-40
0
40
80
120
160
C
VΙ
T
j
Low Voltage Behavior
High Voltage Behavior
AED01968
AED01969
6
3.5
mA
V
V
V
Ι
Q
Q
Ι
3.0
5
2.5
2.0
4
T
= 25 C
V =V
j
Ι
Q
R
= 3.3 kΩ
L
3
2
1.5
1.0
0.5
0
T
= 25 C
j
R
= 20 Ω
L
1
-2
0
-50
-25
0
25
50
V
0
2
4
6
8
10
V
V
Ι
V
Ι
Semiconductor Group
10
1998-11-01
TLE 4276
Typical Performance Characteristics for V85:
Output Voltage VQ versus
Temperature Tj
Current Consumption Iq versus
Input Voltage VI
AED01971
AED01970
30
9.0
V
V
mA
Q
Ι q
V = 13.5 V
Ι
20
10
0
8.5
8.0
7.5
T j = 25 C
RL = 20
Ω
0
10
20
30
50
V
-40
0
40
80
120
160
C
VΙ
T
j
Low Voltage Behavior
High Voltage Behavior
AED01973
AED01972
3.5
12
V
mA
Ι
V
Ι
3.0
Q
10
V
Q
2.5
2.0
8
T
= 25 C
j
V =V
Ι
Q
R
= 8.5 kΩ
L
1.5
1.0
0.5
0
6
4
2
0
T
= 25 C
j
R
= 34 Ω
L
-2
-50
-25
0
25
50
V
0
4
8
12
16
V
20
V
V
Ι
Ι
Semiconductor Group
11
1998-11-01
TLE 4276
Typical Performance Characteristics for V10:
Output Voltage VQ versus
Temperature Tj
Current Consumption Iq versus
Input Voltage VI
AED01974
AED01975
10.5
V
30
V
Q
mA
Ι q
V = 13.5 V
Ι
10.0
9.5
20
10
0
T j = 25 C
RL = 20
Ω
9.0
-40
0
40
80
120
160
C
0
10
20
30
50
V
T
VΙ
j
Low Voltage Behavior
High Voltage Behavior
AED01977
AED01976
3.5
12
V
mA
Ι
V
V
Ι
3.0
Q
Q
10
2.5
2.0
8
T
= 25 C
j
V =V
Ι
Q
R
= 10 kΩ
L
1.5
1.0
0.5
0
6
4
2
0
T
= 25 C
j
R
= 34 Ω
L
-2
-50
-25
0
25
50
V
0
4
8
12
16
V
20
V
V
Ι
Ι
Semiconductor Group
12
1998-11-01
TLE 4276
Package Outlines
P-TO220-5-3
(Plastic Transistor Single Outline)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”
Dimensions in mm
Semiconductor Group
13
1998-11-01
TLE 4276
P-TO220-5-43
(Plastic Transistor Single Outline)
Semiconductor Group
14
1998-11-01
TLE 4276
P-TO220-5-122
(Plastic Transistor Single Outline)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
Dimensions in mm
SMD = Surface Mounted Device
Semiconductor Group
15
1998-11-01
TLE 4276
P-TO252-5-1
(Plastic Transistor Single Outline)
+0.05
-0.10
+0.15
2.3
6.5
-0.10
+0.08
0.9
-0.04
B
±0.1
5.4
A
±0.1
1
0...0.15
0.15 max
per side
+0.08
-0.04
0.5
±0.1
5x0.6
1.14
0.1
4.56
M
0.25
A B
GPT09161
All metal surfaces tin plated, except area of cut.
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
Dimensions in mm
SMD = Surface Mounted Device
Semiconductor Group
16
1998-11-01
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