Q67040-S4505 [INFINEON]
FAST IGBT IN NPT TECHNOLOGY; 快速IGBT在不扩散核武器条约科技
| 型号： | Q67040-S4505 |
| 厂家： | 
Infineon |
| 描述： | FAST IGBT IN NPT TECHNOLOGY |
| 文件： | 总12页 (文件大小：388K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGP02N60,
SGB02N60
SGD02N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
C
E
- Motor controls
- Inverter
G
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-252-3-1 (D-PAK) P-TO-220-3-1
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
(TO-252AA)
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat)
Tj
Package
Ordering Code
SGP02N60
SGB02N60
SGD02N60
600V
2A
2.2V
TO-220AB
Q67040-S4504
Q67040-S4505
Q67041-A4707
150°C
TO-263AB
TO-252AA(DPAK)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
VCE
IC
600
V
A
6.0
2.9
TC = 100°C
Pulsed collector current, tp limited by Tjmax
ICpul s
-
12
12
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
VG E
EAS
V
±20
Avalanche energy, single pulse
IC = 2 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
13
mJ
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
tSC
10
30
µs
Pt ot
W
TC = 25°C
Operating junction and storage temperature
Tj , Tstg
-55...+150
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02
SGP02N60,
SGB02N60
SGD02N60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Rt hJC
Rt hJA
Rt hJA
4.2
62
K/W
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
TO-220AB
TO-252AA
TO-263AB
50
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V( BR)CES
600
-
-
V
VG E=0V, IC =500µA
Collector-emitter saturation voltage
VC E( sat ) VG E = 15V, IC =2A
Tj =25°C
1.7
-
1.9
2.2
2.4
2.7
Tj =150°C
Gate-emitter threshold voltage
VG E(t h)
ICES
3
4
5
IC =150µA,VCE=VGE
VCE=600V,VGE=0V
Tj =25°C
Zero gate voltage collector current
µA
-
-
-
-
20
250
Tj =150°C
Gate-emitter leakage current
Transconductance
IGES
gfs
VCE=0V,VG E=20V
VCE=20V, IC =2A
-
-
-
100
-
nA
S
1.6
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
VG E=0V,
-
-
-
-
142
18
170
22
pF
Output capacitance
Coss
Crss
f=1MHz
Reverse transfer capacitance
Gate charge
10
12
QGate
VCC =480V, IC =2A
VG E=15V
14
18
nC
nH
A
Internal emitter inductance
LE
TO-220AB
-
-
7
-
-
measured 5mm (0.197 in.) from case
Short circuit collector current2)
IC( SC)
20
VG E=15V,tSC≤10µs
VCC ≤ 600V,
Tj ≤ 150°C
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Jul-02
SGP02N60,
SGB02N60
SGD02N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Tj =25°C,
CC =400V,IC =2A,
VG E=0/15V,
td(on)
tr
td( off)
tf
-
-
-
-
-
-
-
20
13
24
16
ns
V
Turn-off delay time
Fall time
259
311
62
RG=118Ω,
1)
Lσ =180nH,
52
1)
Cσ =180pF
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Et s
0.036
0.028
0.064
0.041 mJ
0.036
Energy losses include
“tail” and diode
reverse recovery.
0.078
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Tj =150°C,
td(on)
tr
td( off)
tf
-
-
-
-
-
-
-
20
14
24
17
ns
V
V
CC =400V, IC =2A,
G E=0/15V,
Turn-off delay time
Fall time
287
344
80
RG=118Ω,
1)
Lσ =180nH,
67
1)
Cσ =180pF
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Et s
0.054
0.043
0.097
0.062 mJ
0.056
Energy losses include
“tail” and diode
reverse recovery.
0.118
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Jul-02
SGP02N60,
SGB02N60
SGD02N60
16A
14A
12A
10A
8A
Ic
tp=2µs
10A
1A
15µs
50µs
200µs
TC=80°C
6A
0.1A
0.01A
TC=110°C
1ms
DC
4A
Ic
2A
0A
10Hz
1V
10V
100V
1000V
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 118Ω)
35W
30W
25W
20W
15W
10W
5W
7A
6A
5A
4A
3A
2A
1A
0A
0W
25°C
25°C
50°C
75°C 100°C 125°C
50°C
75°C 100°C 125°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation (IGBT) as a
function of case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Jul-02
SGP02N60,
SGB02N60
SGD02N60
7A
6A
5A
4A
3A
2A
1A
0A
7A
6A
5A
VGE=20V
15V
13V
11V
9V
VGE=20V
15V
13V
11V
9V
4A
3A
2A
1A
0A
7V
7V
5V
5V
0V
1V
2V
3V
4V
5V
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
Figure 6. Typical output characteristics
(Tj = 25°C)
(Tj = 150°C)
8A
4.0V
Tj=+25°C
7A
6A
5A
4A
3A
2A
1A
0A
3.5V
-55°C
+150°C
IC = 4A
3.0V
2.5V
IC = 2A
2.0V
1.5V
1.0V
0V
2V
4V
6V
8V
10V
-50°C
0°C
50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE
Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
Figure 8. Typical collector-emitter
(VCE = 10V)
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Jul-02
SGP02N60,
SGB02N60
SGD02N60
td(off)
td(off)
tf
tf
100ns
100ns
td(on)
td(on)
tr
tr
10ns
0A
10ns
0Ω
100Ω
200Ω
300Ω
400Ω
1A
2A
3A
4A
5A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,
VGE = 0/+15V, RG = 118Ω,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
5.5V
5.0V
4.5V
4.0V
td(off)
100ns
max.
tf
3.5V
3.0V
2.5V
2.0V
td(on)
typ.
min.
tr
10ns
0°C
50°C
100°C
150°C
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 118Ω,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.15mA)
Dynamic test circuit in Figure E)
6
Jul-02
SGP02N60,
SGB02N60
SGD02N60
0.2mJ
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery.
due to diode recovery.
0.2mJ
0.1mJ
0.0mJ
Ets*
Ets*
0.1mJ
Eon
*
Eon
*
Eoff
Eoff
0.0mJ
0Ω
100Ω
200Ω
300Ω
400Ω
0A
1A
2A
3A
4A
5A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,
VGE = 0/+15V, RG = 118Ω,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
0.2mJ
*) Eon and Ets include losses
due to diode recovery.
D=0.5
0.2
100K/W
Ets*
0.1
0.05
Eon
*
0.1mJ
0.02
R , ( K / W )
1.026
1.3
1.69
0.183
τ , ( s )
10-1K/W
0.035
3.62*10-3
4.02*10-4
4.21*10-5
0.01
Eoff
R1
R2
10-2K/W
single pulse
C1=τ1/R1 C2=τ2/R2
0.0mJ
0°C
50°C
100°C
150°C
1µs
10µs 100µs 1ms 10ms 100ms 1s
tp, PULSE WIDTH
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 118Ω,
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
Dynamic test circuit in Figure E)
7
Jul-02
SGP02N60,
SGB02N60
SGD02N60
25V
20V
15V
10V
5V
Ciss
100pF
120V
480V
Coss
10pF
Crss
0V
0nC
5nC
10nC
15nC
0V
10V
20V
30V
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC = 2A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25µs
40A
30A
20A
10A
0A
20µs
15µs
10µs
5µs
0µs
10V
11V
12V
13V
14V
15V
10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ≤ 600V,Tj = 150°C)
8
Jul-02
SGP02N60,
SGB02N60
SGD02N60
dimensions
[mm]
TO-220AB
symbol
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
10.30
15.95
0.86
3.89
3.00
6.80
14.00
4.75
0.65
1.32
min
max
A
B
C
D
E
F
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1531
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
1.17
2.30
TO-263AB (D2Pak)
dimensions
symbol
[mm]
[inch]
min
9.80
0.70
1.00
1.03
max
10.20
1.30
1.60
1.07
min
max
A
B
C
D
E
F
0.3858
0.0276
0.0394
0.0406
0.4016
0.0512
0.0630
0.0421
2.54 typ.
0.65 0.85
5.08 typ.
0.1 typ.
0.0256
0.0335
G
H
K
L
0.2 typ.
4.30
4.50
1.37
9.45
2.50
0.1693
0.0461
0.3563
0.0906
0.1772
0.0539
0.3720
0.0984
1.17
9.05
2.30
M
N
P
Q
R
S
T
15 typ.
0.5906 typ.
0.00
4.20
0.20
5.20
0.0000
0.1654
0.0079
0.2047
8° max
8° max
2.40
0.40
3.00
0.60
0.0945
0.0157
0.1181
0.0236
U
V
W
X
Y
Z
10.80
1.15
6.23
4.60
9.40
16.15
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
9
Jul-02
SGP02N60,
SGB02N60
SGD02N60
dimensions
P-TO252 (D-Pak)
symbol
[mm]
inch]
min
6.40
5.25
(0.65)
0.63
max
6.73
5.50
min
max
A
B
C
D
E
F
0.2520
0.2067
0.2650
0.2165
(1.15) (0.0256) (0.0453)
0.89
0.0248
0.0350
2.28
0.2520
2.19
0.76
0.90
5.97
9.40
0.46
0.87
0.51
5.00
4.17
0.26
-
2.39
0.98
1.21
6.23
10.40
0.58
1.15
-
0.0862
0.0299
0.0354
0.2350
0.3701
0.0181
0.0343
0.0201
0.1969
0.1642
0.0102
-
0.0941
0.0386
0.0476
0.2453
0.4094
0.0228
0.0453
-
G
H
K
L
M
N
P
R
S
T
-
-
-
-
1.02
-
0.0402
-
U
dimensions
P-TO251 (I-Pak)
symbol
[mm]
[inch]
min
6.47
5.25
4.19
0.63
max
6.73
5.41
4.43
0.89
min
max
A
B
C
D
E
F
0.2547
0.2067
0.1650
0.0248
0.2650
0.2130
0.1744
0.0350
2.29 typ.
2.18
0.0902 typ.
2.39
0.86
1.11
6.23
9.65
0.56
1.15
0.0858
0.0299
0.0398
0.2350
0.3598
0.0181
0.0386
0.0941
0.0339
0.0437
0.2453
0.3799
0.0220
0.0453
G
H
K
L
0.76
1.01
5.97
9.14
0.46
0.98
M
N
10
Jul-02
SGP02N60,
SGB02N60
SGD02N60
τ1
r1
τ2
r 2
τn
r n
T (t)
j
p(t)
r 2
r1
rn
T
C
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
and Stray capacity Cσ =180pF.
11
Jul-02
SGP02N60,
SGB02N60
SGD02N60
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
12
Jul-02
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