Q67040-S4650 [INFINEON]
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode; 低损耗DUOPACK ： IGBT的沟槽场终止和技术，软，恢复快反平行EMCON何二极管
| 型号： | Q67040-S4650 |
| 厂家： | 
Infineon |
| 描述： | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 文件： | 总14页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IHP10T120
Soft Switching Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
•
•
Short circuit withstand time – 10µs
Designed for :
- Soft Switching Applications
- Induction Heating
C
E
•
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
G
P-TO-220-3-1
(TO-220AB)
- Very low Vce(sat)
•
•
•
Very soft, fast recovery anti-parallel EmCon™ HE diode
Low EMI
Application specific optimisation of inverse diode
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
Ordering Code
IHP10T120
1200V
10A
1.7V
H10T120
TO-220-3-1 Q67040-S4650
150°C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
VCE
IC
1200
V
A
16
10
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
24
24
V
CE ≤ 1200V, Tj ≤ 150°C
Diode forward current
IF
11
7
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax, Tc = 25°C
IFpuls
IFSM
16.5
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
A
28
50
40
VGE
tSC
V
±20
10
Short circuit withstand time1)
µs
V
GE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Ptot
Tj
Tstg
-
138
W
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-40...+150
-55...+150
260
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
IGBT thermal resistance,
junction – ambient
RthJC
RthJCD
RthJA
0.9
2.6
62
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)C ES
V
GE=0V, IC=0.5mA
1200
-
-
V
Collector-emitter saturation voltage
VC E(sa t) VGE = 15V, IC=10A
Tj=25°C
-
-
-
1.7
2.0
2.2
2.2
-
-
Tj=125°C
Tj=150°C
Diode forward voltage
VF
VGE=0V, IF=4A
-
-
1.65
1.7
2.15
-
Tj=25°C
Tj=150°C
Gate-emitter threshold voltage
Zero gate voltage collector current
VGE(th )
IC ES
IC=0.6mA,VCE=VGE
5.0
5.8
6.5
V
C E=1200V,
mA
V
GE=0V
Tj=25°C
Tj=150°C
-
-
-
-
-
-
-
0.2
2.0
100
-
Gate-emitter leakage current
Transconductance
IGES
gfs
V
V
C E=0V,VGE=20V
C E=20V, IC=10A
nA
S
10
Integrated gate resistor
RGint
none
Ω
2
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
V
V
C E=25V,
GE=0V,
-
-
-
-
606
48
29
-
-
-
-
pF
f=1MHz
V
V
QGa te
CC=960V, IC=10A
GE=15V
53
nC
nH
A
Internal emitter inductance
LE
-
-
-
13
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC (SC)
48
V
GE=15V,tSC ≤10µs
VCC = 600V,
Tj = 25°C
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
45
20
520
82
0.68
0.78
1.46
-
-
-
-
-
-
-
ns
Tj=25°C,
V
V
CC=610V,IC=10A,
GE= 0/15V,
RG=81Ω,
Lσ 2)=180nH,
Cσ 2)=39pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
trr
Qrr
-
-
-
115
330
7.15
-
ns
nC
A
Tj=25°C,
VR=800V, IF=4A,
diF/dt=750A/µs
Diode peak reverse recovery current Irrm
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
45
24
-
-
-
-
-
-
-
ns
Tj=150°C,
V
V
CC=610V,IC=10A,
GE= 0 /15V,
592
177
0.83
1.19
2.02
RG= 81Ω
Lσ 1)=180nH,
Cσ 1)=39pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
trr
Qrr
-
-
-
185
630
8.1
-
-
-
ns
nC
A
Tj=150°C
VR=800V, IF=4A,
diF/dt=750A/µs
Diode peak reverse recovery current Irrm
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
4
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
tp=2µs
20A
15A
10A
5A
10µs
10A
1A
TC=80°C
50µs
200µs
TC=110°C
500µs
2ms
Ic
Ic
DC
0,1A
0A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
switching frequency
(D = 0, TC = 25°C,
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
Tj ≤150°C;VGE=15V)
V
GE = 0/+15V, RG = 81Ω)
140W
120W
100W
80W
60W
40W
20W
0W
25A
20A
15A
10A
5A
0A
25°C
50°C
75°C
100°C
125°C
25°C
75°C
125°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
Figure 4. Collector current as a function of
of case temperature
case temperature
(Tj ≤ 150°C)
(VGE ≥ 15V, Tj ≤ 150°C)
5
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
20A
15A
10A
5A
20A
V
GE=17V
15V
VGE=17V
15V
15A
10A
5A
13V
11V
9V
13V
11V
9V
7V
7V
0A
0A
0V
1V
2V
3V
4V
5V
6V
0V
1V
2V
3V
4V
5V
6V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 150°C)
3,0V
20A
IC=15A
IC=8A
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
15A
10A
5A
IC=5A
IC=2.5A
TJ=150°C
25°C
0A
0V
2V
4V
6V
8V
10V
12V
-50°C
0°C
50°C
100°C
V
GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE=20V)
saturation voltage as a function of junction
temperature
(VGE = 15V)
6
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
td(off)
td(off)
tf
tf
100ns
10ns
1ns
100 ns
10 ns
1 ns
td(on)
td(on)
tr
tr
5A
10A
15A
5Ω
50Ω
100Ω
150Ω
200Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C, VCE=600V,
(inductive load, TJ=150°C, VCE=600V,
V
GE=0/15V, RG=81ꢀ,
VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
td(off)
7V
6V
5V
4V
3V
2V
1V
0V
max.
typ.
100ns
tf
td(on)
min.
tr
10ns
0°C
50°C
100°C
150°C
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V, VGE=0/15V, IC=8A,
RG=81ꢀ,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
Dynamic test circuit in Figure E)
7
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
*) Eon and Etsinclude losses
*) Eon and Ets include losses
due to diode recovery
due to diode recovery
3,2 mJ
2,8 mJ
2,4 mJ
2,0 mJ
1,6 mJ
1,2 mJ
0,8 mJ
0,4 mJ
0,0 mJ
Ets*
Ets*
6,0mJ
4,0mJ
2,0mJ
0,0mJ
Eoff
Eon*
Eon*
Eoff
5A
10A
15A
5Ω
50Ω
100Ω
150Ω
200Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
Figure 14. Typical switching energy losses
as a function of gate resistor
as a function of collector current
(inductive load, TJ=150°C, VCE=600V,
(inductive load, TJ=150°C, VCE=600V,
V
GE=0/15V, RG=81ꢀ,
VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
*) Eon and Ets include losses
due to diode recovery
Ets*
2,5mJ
3mJ
2,0mJ
1,5mJ
1,0mJ
0,5mJ
0,0mJ
2mJ
Eoff
Ets*
Eon*
Eoff
1mJ
Eon*
0mJ
50°C
100°C
150°C
400V
500V
600V
700V
800V
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE=600V, VGE=0/15V, IC=8A,
RG=81ꢀ,
Figure 16. Typical switching energy losses
as a function of collector emitter voltage
(inductive load, TJ=150°C, VGE=0/15V, IC=8A,
RG=81ꢀ,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
8
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
1nF
Ciss
15V
10V
5V
240V
960V
100pF
Coss
Crss
0V
10pF
0V
0nC
25nC
50nC
10V
20V
Q
GE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE=0V, f = 1 MHz)
(IC=8 A)
15µs
75A
50A
25A
0A
10µs
5µs
0µs
12V
14V
16V
12V
14V
16V
18V
V
GE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter
voltage
(VCE ≤ 600V, Tj ≤ 150°C)
9
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
100K/W
10-1K/W
10-2K/W
D=0.5
D=0.5
100K/W
0.2
0.1
0.2
0.1
R , ( K / W )
0.1759
τ , ( s )
8.688*10-2
1.708*10-2
R , ( K / W )
0.500
τ , ( s )
4.529*10-2
6.595*10-3
1.003*10-3
9.423*10-5
R2
0.3291
1.259*10-3
10-1K/W
0.05
0.2886
0.578
0.1189
1.898*10-4
1.036
R1
R2
0.05
0.02
0.01
single pulse
100µs 1ms
0.4046
0.02
0.01
R1
C1=τ1/R1 C2=τ2/R2
single pulse
C1=τ1/R1 C2=τ2/R2
10-2K/W
10µs
100µs
1ms
10ms 100ms
10µs
10ms 100ms
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 23. IGBT transient thermal
resistance as a function of pulse width
(D = tp / T)
Figure 24. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
850nC
500ns
IF=8A
IF=8A
800nC
450ns
750nC
700nC
650nC
4A
400ns
350ns
2A
300ns
250ns
200ns
150ns
100ns
50ns
4A
600nC
550nC
500nC
2A
450nC
400nC
0A/µs
400A/µs
800A/µs
1200A/µ
0A/µs
400A/µs
800A/µs
1200A/
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=8A,
Figure 24. Typical reverse recovery charge
as a function of diode current slope
(VR=800V, TJ = 125°C,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
10
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
20
12
10
8
IF=8A
15
10
5
4A
2A
IF=8A
4A
2A
6
0
4
0A/µs
400A/µs
800A/µs
1200A
0A/µs
400A/µs
800A/µs
1200A/µ
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current slope
(VR=800V, TJ = 125°C,
Figure 26. Typical reverse recovery
softness factor as a function of diode
current slope
Dynamic test circuit in Figure E)
(VR=800V, TJ = 125°C,
Dynamic test circuit in Figure E)
2,4V
IF=8A
12A
TJ=25°C
2,0V
4A
10A
8A
6A
4A
2A
0A
150°C
1,6V
2A
1,2V
0,8V
0,4V
0,0V
-50°C
0°C
50°C
100°C 150°C
0V
1V
2V
3V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage
as a function of junction temperature
11
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
dimensions
[mm]
TO-220AB
symbol
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
10.30
15.95
0.86
3.89
3.00
6.80
14.00
4.75
0.65
1.32
min
max
A
B
C
D
E
F
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1531
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
1.17
2.30
12
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
VR
90% Ir r m
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
and Stray capacity Cσ =39pF.
Figure B. Definition of switching losses
13
Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2001
All Rights Reserved.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
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14
Rev. 2 Jun-04
Power Semiconductors
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