Q67041-A4667-A001 [INFINEON]
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY; HIGHT SPEED IGBT芯片NPT -TECHNOLOGY
| 型号： | Q67041-A4667-A001 |
| 厂家： | 
Infineon |
| 描述： | HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIGC25T60UN
High Speed IGBT Chip in NPT-technology
C
FEATURES:
This chip is used for:
SGP30N60HS
·
·
·
·
·
·
low Eoff
600V NPT technology
100µm chip
short circuit prove
positive temperature coefficient
easy paralleling
·
Applications:
G
·
·
·
Welding
PFC
UPS
Chip Type
VCE
ICn
30A
Die Size
4.5 x 5.71 mm2
Package
Ordering Code
Q67041-A4667-
A001
SIGC25T60UN
600V
sawn on foil
MECHANICAL PARAMETER:
mm2
Raster size
4.5 x 5.71
25.7 / 20.7
2x( 2.18x1.58 )
1.08 x 0.68
100
Area total / active
Emitter pad size
Gate pad size
Thickness
µm
mm
deg
Wafer size
150
Flat position
90
Max.possible chips per wafer
Passivation frontside
Emitter metallization
566
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Collector metallization
Die bond
electrically conductive glue or solder
Wire bond
Al, £500µm
Reject Ink Dot Size
Æ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 7262-U, Edition2, 28.11.2003
SIGC25T60UN
MAXIMUM RATINGS:
Parameter
Symbol
VCE
Value
Unit
Collector-emitter voltage, T =25 °C
600
V
A
j
1 )
DC collector current, limited by T
IC
jmax
Pulsed collector current, tp limited by T
Gate emitter voltage
Icpuls
VGE
90
±20
A
jmax
V
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
Tj, Ts t g
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified:
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=500µA
VGE=15V, IC=30A
IC=300µA, VGE=VCE
VCE=600V, VGE=0V
VCE=0V, VGE=20V
600
2.8
4
3.15
5
V
3
40
µA
nA
IGES
120
DYNAMIC CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Unit
Conditions
min. typ.
max.
VC E=25V
VGE=0V
f=1MHz
pF
Input capacitance
Ciss
Coss
Crss
-
-
-
1500
Output capacitance
150
92
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Value
Conditions 1)
Parameter
Symbol
Unit
min. typ.
max.
ns
Tj=150° C
Turn-on delay time
Rise time
td(on)
tr
td(of f )
-
-
-
-
16
13
VC C =400V
IC =30A
Turn-off delay time
122
29
VGE=+15/0V
RG=1. 8W
Fall time
tf
1) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7262-U, Edition2, 28.11.2003
SIGC25T60UN
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7262-U, Edition2, 28.11.2003
SIGC25T60UN
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
SGP30N60HS
Package :TO220
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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characteristics.
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Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 7262-U, Edition2, 28.11.2003
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