Q67045-A5014 [INFINEON]
SIPMOS㈢ Small-Signal-Transistor; SIPMOS®小信号三极管
| 型号： | Q67045-A5014 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS㈢ Small-Signal-Transistor |
| 文件： | 总9页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS127
SIPMOS® Small-Signal-Transistor
Product Summary
Feature
V DS
600
V
Ω
A
• n-channel
R DS(on),max
I D
500
• enhancement mode
0.023
• Logic level
• dv /dt rated
• Pb-free lead plating, RoHS compliant
PG-SOT23
Type
Package
Ordering Code Tape and Reel Information
E6327: 3000PCS/reel
Marking
BSS127
PG-SOT23 Q67045-A5014
SI
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
T A=25 °C
I D=0.09 A,
Continuous drain current
0.021
0.017
0.09
A
I D,pulse
dv /dt
V GS
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
V
DS=480 V,
di /dt =200 A/µs,
j,max=150 °C
6
kV/µs
V
T
±20
ESD sensitivity (HBM) as per
MIL-STD 883
Class 1
P tot
T A=25 °C
Power dissipation
0.50
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Rev. 1.1
page 1
2006-03-24
BSS127
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R thJA
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=0 V, I D=8 µA
Drain-source breakdown voltage
Gate threshold voltage
600
1.4
-
-
V
2.0
2.6
V
DS=600 V, V GS=0 V,
I D (off)
Drain-source leakage current
-
-
0.1
10
µA
T j=25 °C
V
DS=600 V, V GS=0 V,
-
-
-
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
Gate-source leakage current
10
100 nA
GS=4.5 V,
R DS(on)
Drain-source on-state resistance
330
600
Ω
I D=0.016 A
V
GS=10 V, I D=0.016 A
-
310
500
|V DS|>2|I D|R DS(on)max
I D=0.01 A
,
g fs
Transconductance
0.007
0.015
-
S
Rev. 1.1
page 2
2006-03-24
BSS127
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
21
2.4
1.0
6.1
9.7
14
28
3
pF
V
GS=0 V, V DS=25 V,
C oss
Crss
t d(on)
t r
f =1 MHz
1.5
19.0 ns
14.5
V
V
DD=300 V,
GS=10 V, I D=0.01 A,
t d(off)
t f
Turn-off delay time
Fall time
21
R G=6 Ω
115
170
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.05
1.2
1.4
3.5
0.08 nC
1.8
V
DD=400 V,
I D=0.01 A,
GS=0 to 10 V
Q gd
Q g
2.1
V
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.016
0.09
T A=25 °C
I S,pulse
V
GS=0 V, I F=0.016 A,
V SD
Diode forward voltage
-
0.82
1.2
V
T j=25 °C
V R=300 V,
t rr
Reverse recovery time
-
-
160
240 ns
19.8 nC
I F=0.016 A,
Q rr
Reverse recovery charge
13.2
di F/dt =100 A/µs
Rev. 1.1
page 3
2006-03-24
BSS127
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.03
0.02
0.01
0
0.5
0.25
0
0
40
80
120
160
0
40
80
120
160
T
A [°C]
T
A [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJA=f(t p)
Z
parameter: D =t p/T
103
0.1
10 µs
0.5
limited by on-state
resistance
100 µs
102
0.2
0.1
1 ms
0.05
0.02
101
0.01
10 ms
0.01
single pulse
100 ms
100
DC
10-1
0.001
10-5 10-4 10-3 10-2 10-1 100 101 102 103
1
10
100
1000
V
DS [V]
t p [s]
Rev. 1.1
page 4
2006-03-24
BSS127
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
0.03
0.025
0.02
0.015
0.01
0.005
0
1000
4 V
2.6 V
3.2 V
V 10
3.6 V
3 V
3.8 V
V 5
800
V 4
600
400
200
0
V 3.8
V 3.6
5 V
10 V
V 3.2
V 3
V 2.6
0
5
10
0
0.005
0.01
0.015
0.02
0.025
V
DS [V]
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.025
0.02
0.015
0.01
0.005
0
0.025
0.02
0.015
0.01
0.005
0
0
1
2
3
4
0.000
0.005
0.010
D [A]
0.015
0.020
V
GS [V]
I
Rev. 1.1
page 5
2006-03-24
BSS127
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V DS=VGS; I D=8 µA
R
DS(on)=f(T j); I D=0.1 A; V GS=10 V
V
parameter: I D
1000
3
2.5
2
800
max
typ
600
%98
1.5
1
typ
min
400
200
0
0.5
0
-60
-20
20
60
100
140
-60
-20
20
60
100
140
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
)
parameter: T j
102
10-1
150 °C, 98%
25 °C, 98%
150 °C
25 °C
101
Ciss
10-2
100
Coss
Crss
10-1
10-3
0
0
10
20
30
DS [V]
40
50
0.4
0.8
1.2
1.6
2
2.4
2.8
V
SD [V]
V
Rev. 1.1
page 6
2006-03-24
BSS127
13 Typ. gate charge
GS=f(Q gate); I D=0.01 A pulsed
14 Drain-source breakdown voltage
V
V
BR(DSS)=f(T j); I D=250 µA
parameter: V DD
700
680
660
640
620
600
580
560
540
520
500
6
5
4
3
2
1
0.5 VBR(DSS)
0.8 VBR(DSS)
0.2 VBR(DSS)
0
0
-1
1
2
3
4
-2
-3
-4
-60
-20
20
60
100
140
Q
gate [nC]
T j [°C]
Rev. 1.1
page 7
2006-03-24
BSS127
Package Outline:
Footprint:
Packaging:
Rev. 1.1
page 8
2006-03-24
BSS127
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices, please contact your
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(see address list).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 9
2006-03-24
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