Q67050-A4345-A101 [INFINEON]
IGBT3 Chip; IGBT3芯片
| 型号： | Q67050-A4345-A101 |
| 厂家： | 
Infineon |
| 描述： | IGBT3 Chip |
| 文件： | 总4页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIGC100T60R3
IGBT3 Chip
FEATURES:
This chip is used for:
power module
·
·
·
·
·
·
600V Trench & Field Stop technology
low VCE(sat)
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
C
·
Applications:
drives
G
·
E
Chip Type
VCE
ICn
Die Size
Package
Ordering Code
Q67050-
A4345-A101
SIGC100T60R3
600V 200A 9.73 x 10.23 mm2 sawn on foil
MECHANICAL PARAMETER:
Raster size
9.73 x 10.23
( 4.256 x 1.938 ) x 4
( 4.256 x 2.356 ) x 4
mm2
Emitter pad size
Gate pad size
1.615 x 0.817
99.5 / 80.1
70
Area total / active
Thickness
mm2
µm
Wafer size
150
mm
deg
Flat position
90
Max. possible chips per wafer
Passivation frontside
Emitter metallization
121 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Collector metallization
Die bond
electrically conductive glue or solder
Wire bond
Al, <500µm
Reject ink dot size
Æ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended storage environment
Edited by INFINEON Technologies AI PS DD CLS, L7601A, Edition 2, 27.01.2005
SIGC100T60R3
MAXIMUM RATINGS:
Parameter
Symbol
VC E
Value
Unit
Collector-emitter voltage, T = 25 °C
600
V
A
j
1 )
DC collector current, limited by T
IC
jmax
Pulsed collector current, tp limited by T
Gate emitter voltage
Icpuls
VGE
600
±20
A
jmax
V
Operating junction and storage temperature
Tj, Ts t g
-40 ... +175
°C
Tvj = 150°C
Tvj = 25°C
6
8
SC data, VGE = 15V, VCC = 360V
tp
µs
1 ) depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V , IC= 4mA
VGE=15V, IC=200A
IC=3200µA , VGE=VCE
VCE=600V , VGE=0V
VCE=0V , VGE=20V
600
1.05
5.0
V
1.45
5.8
1.85
6.5
10.1
--
µA
nA
W
IGES
RGint
2
ELECTRICAL CHARACTERISTICS (verified by design/characterization):
Value
Parameter
Symbol
Unit
Conditions
min. typ.
12335
max.
Input capacitance
Ciss
Coss
Crss
pF
VC E=25V,
Output capacitance
VGE=0V,
f=1MHz
769
366
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load
2)
Value
min. typ.
145
Parameter
Symbol
Unit
Conditions
Tj=125° C
VC C =300V,
IC =200A,
max.
Turn-on delay time
Rise time
td(on)
tr
td(of f )
tf
ns
30
340
60
Turn-off delay time
Fall time
VGE=-15/15V,
RG= 2W
2) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD CLS, L7601A, Edition 2, 27.01.2005
SIGC100T60R3
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD CLS, L7601A, Edition 2, 27.01.2005
SIGC100T60R3
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
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Edited by INFINEON Technologies AI PS DD CLS, L7601A, Edition 2, 27.01.2005
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