Q68000-A4810 [INFINEON]
PNP Silicon High-Voltage Transistors; PNP硅高压晶体管型号: | Q68000-A4810 |
厂家: | Infineon |
描述: | PNP Silicon High-Voltage Transistors |
文件: | 总4页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MPSA 92
MPSA 93
PNP Silicon High-Voltage Transistors
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: MPSA 42
MPSA 43 (NPN)
1
2
3
Type
Marking
Ordering Code
Pin Configuration
Package 1)
1
2
3
MPSA 92
MPSA 93
MPSA 92
MPSA 93
Q68000-A5906
Q68000-A4810
E
B
C
TO-92
Maximum Ratings
Parameter
Symbol
Values
Unit
MPSA 92
300
MPSA 93
200
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
VCE0
VCB0
VEB0
IC
300
200
5
500
100
mA
Base current
IB
Total power dissipation, TC = 66 ˚C 2)
Junction temperature
625
mW
˚C
Ptot
Tj
150
Storage temperature range
– 65 … + 150
Tstg
Thermal Resistance
Junction - ambient
Junction - case 2)
Rth JA
Rth JC
≤ 200
≤ 135
K/W
1)
For detailed information see chapter Package Outlines.
Mounted on AI-heat sink 15 mm × 25 mm × 0.5 mm.
2)
Semiconductor Group
1
5.91
MPSA 92
MPSA 93
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 1 mA, IB = 0
MPSA 92
MPSA 93
300
200
–
–
–
–
Collector-base breakdown voltage
V(BR)CB0
IC = 100 µA, IB = 0
MPSA 92
MPSA 93
300
200
–
–
–
–
Emitter-base breakdown voltage
IE = 100 µA, IB = 0
V(BR)EB0
ICB0
5
–
–
Collector-base cutoff current
VCB = 200 V
VCB = 160 V
VCB = 200 V, TA = 150 °C
VCB = 160 V, TA = 150 °C
MPSA 92
MPSA 93
MPSA 92
MPSA 93
–
–
–
–
–
–
–
–
100
100
20
nA
nA
µA
µA
20
Emitter-base cutoff current
VBE = 3 V, IC = 0
DC current gain 1)
ICER
hFE
–
–
100
nA
–
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
25
40
25
–
–
–
–
–
–
Collector-emitter saturation voltage 1)
VCEsat
V
IC = 20 mA, IC = 2 mA
MPSA 92
MPSA 93
–
–
–
–
0.5
0.4
Base-emitter saturation voltage 1)
VBEsat
–
–
0.9
IC = 20 mA, IB = 2 mA
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
fT
–
70
–
MHz
pF
Collector-base capacitance
Cobo
VCB = 20 V, f = 1 MHz
MPSA 92
MPSA 93
–
–
–
–
6
8
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
MPSA 92
MPSA 93
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load RthJA = f (tp)
Operating range Ic = f(VCE0
TA = 25 °C, D = 0
)
Collector cutoff current ICB0 = f (TA)
VCB = VCBmax
Semiconductor Group
3
MPSA 92
MPSA 93
DC current gain hFE = f (IC)
VCE = 10 V
Transition frequency fT = f (IC)
f = 20 MHz, IC = 20 mA, VCE = 10 V
Collector current IC = f (VBE)
VCE = 10 V
Semiconductor Group
4
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