Q68000-A6887 [INFINEON]
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated); 砷化镓MMIC （两级单片微波集成电路MMIC放大器全镀金芯片完全钝化）
| 型号： | Q68000-A6887 |
| 厂家： | 
Infineon |
| 描述： | GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
| 文件： | 总9页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs MMIC
CGY 31
● Two-stage monolithic microwave IC (MMIC amplifier)
● All-gold metallization
● Chip fully passivated
● Operating voltage range: 3 to 6 V
● 50 Ω input/output; RLIN RLOUT > 10 dB
● Gain: 18 dB at 1.6 GHz
● Low noise figure: 4 dB at 1.6 GHz
● 3 dB bandwidth: 2 GHz
● Hermetically sealed package
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
Type
Ordering Code Circuit Diagram (Pin Configuration)
CGY 31 Q68000-A6887
TO-12
1 RF output, V
S
2 Interstage, V
S
3 RF input
4 RF and DC
ground, case
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
CGY 31
Maximum Ratings
Parameter
Symbol
Values
Unit
V
Supply voltage, TC ≤ 80 ˚C
Total power dissipation, TC ≤ 50 ˚C
Channel temperature
V
S
6
Ptot
2
W
T
ch
150
˚C
Storage temperature range
Tstg
– 55 … + 150
Thermal Resistance
Channel - case
R
thchC
50
K/W
Note: Exceeding any of the maximum ratings may cause permanent damage to the device.
Appropriate handling procedures are required to protect the electrostatic sensitive IC
against degradation due to excess voltage or excess current spikes. Excellent ground
connection of lead 4 and the package (e. g. soldered on microstripline laminate) is
required to achieve guaranteed RF performance and stable operation conditions and
provides adequate heat sink. Low parasitic capacitance of the bias network to port 2
gives optimum gain and flatness. Input and output connections must be DC isolated by
coupling capacitors.
Semiconductor Group
2
CGY 31
Electrical Characteristics
at T = 25 ˚C, V = 4.5 V, R
Ω
A
S
S
= R = 50 , unless otherwise specified,
L
(for application circuit see next page).
Parameter
Symbol
Values
typ.
160
Unit
min.
–
max.
200
–
Operating current
Iop
mA
dB
Power gain
G
15
18
f= 800 MHz to 1800 MHz
Gain flatness
f= 800 MHz to 1800 MHz
∆G
F
–
2.0
4.0
13
2.5
5.0
9.5
9.5
–
Noise figure
f= 800 MHz to 1800 MHz
–
Input return loss
f= 800 MHz to 1800 MHz
RLIN
RLOUT
–
Output return loss
f= 800 MHz to 1800 MHz
–
12
Third order intercept point
IP3
31
32.5
dBm
two-tone intermodulation test
f1
= 806 MHz, f2= 810 MHz,
Po
= 10 dBm (both carriers)
1 dB gain compression
P1dB
–
19
–
f= 800 MHz to 1800 MHz
Semiconductor Group
3
CGY 31
Application Circuit
f= 800 MHz to 1800 MHz
Legend of components
C1, C2, C
3
: 100 pF
: 1 nF
Chip capacitors
R1
39 Ω
Resistor, e.g. l = 4 mm; 1.8 mm with axial leads
L1
70 nH
Inductance, e.g. 8 turns, 0.25 mm enamelled copper wire
wound on R. The geometrical combination of L and R
1
influences the frequency response.
L
2
40 nH
6 V 2
Inductance, e.g. 5 turns, 0.25 enamelled copper wire
wound on M3-nylon rod.
D
Zener diode, 1.3 W (type BZW 22 C 6 V 2).
Note: For lower frequencies (f = 100 … 900 MHz) the performance of CGY 31 is comparable
to that of CGY 21, if an interstage circuit with L = 1 µH is connected.
1
Semiconductor Group
4
CGY 31
Total power dissipation Ptot = f (T
C
)
Max. supply voltage VSmax = f (T )
C
Operating current Iop = f (V )
S
Semiconductor Group
5
CGY 31
Power gain G = f (f)
= 4.5 V, R = R = 50 Ω
Power gain G = f (V
S
)
V
S
S
L
RS
= R = 50 Ω
L
Power output G = f (Pout
= 4.5 V, R = R = 50 Ω
f= 0.8 GHz
)
V
S
S
L
Semiconductor Group
6
CGY 31
Third order intercept point IP
f= 0.8 GHz, R = R = 50 Ω
3
= f (V )
S
S
L
The intermodulation ratio dIM can easily be
determined.
– P
d
IM = 2 (IP
3
0
)
IP
d
3
= Intercept point
IM = Intermodulation ratio
= Power level of each carrier in dBm
P
0
Noise figure F = f (f)
= 4.5 V, R = R = 50 Ω
Noise figure F = f (V
S
)
V
S
S
L
RS
= R = 50 Ω
L
Semiconductor Group
7
CGY 31
S Parameters
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
VS
= 4.5 V, Z
0
= 50 Ω
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
0.42
0.28
0.26
0.25
0.24
0.24
0.23
0.22
0.19
0.16
0.12
0.06
0.02
0.06
0.11
0.15
– 35
– 42
– 51
– 64
– 72
– 76
– 78
– 77
– 73
– 71
– 66
– 56
– 8
107
31
21
21
22
28
27
29
30
29
32
33
35
36
36
41
40
23
0.007
0.008
0.008
0.009
0.009
0.010
0.010
0.011
0.011
0.011
0.012
0.011
0.012
0.012
0.012
0.014
0.25
0.21
0.21
0.22
0.23
0.24
0.25
0.27
0.30
0.33
0.35
0.36
0.36
0.35
0.34
0.33
7.77
8.93
9.04
9.16
9.15
8.99
8.62
8.15
7.52
6.80
6.06
5.45
4.81
4.15
3.43
2.68
– 19
– 20
– 23
– 30
– 34
– 36
– 35
– 31
– 26
– 22
– 17
– 13
– 11
– 10
– 13
– 20
– 12
– 34
– 52
– 71
– 90
– 109
– 127
– 145
– 162
– 179
165
150
135
121
110
108
111
S11 = f (f)
S12 = f (f)
V
S
= 4.5 V, Z
0
= 50 Ω
V
S
= 4.5 V, Z
0
= 50 Ω
Semiconductor Group
8
CGY 31
S Parameters (continued)
S21 = f (f)
S22 = f (f)
V
S
= 4.5 V, Z
0
= 50 Ω
V
S
= 4.5 V, Z = 50 Ω
0
Semiconductor Group
9
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