Q68000-A8547 [INFINEON]
Silicon Switching Diode Array; 硅开关二极管阵列
| 型号： | Q68000-A8547 |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diode Array |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Switching Diode Array
SMBD 2835
SMBD 2836
● For high-speed switching applications
● Common anode
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
SMBD 2835
SMBD 2836
sA3
sA2
Q68000-A8547
Q68000-A8436
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
SMBD 2835 SMBD 2836
Reverse voltage
V
V
R
30
35
50
75
V
Peak reverse voltage
Forward current
RM
IF
200
mA
A
Surge forward current, t = 1 µs
IFS
4.5
330
Total power dissipation, T
S
= 31 ˚C
P
tot
mW
˚C
Junction temperature
T
T
j
150
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 500
≤ 360
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBD 2835
SMBD 2836
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Breakdown voltage
V
(BR)
V
I(BR) = 100 µA
SMBD 2835
SMBD 2836
35
75
–
–
–
–
Forward voltage
VF
mV
IF
IF
IF
= 10 mA
= 50 mA
= 100 mA
–
–
–
–
–
–
855
1000
1200
Reverse current
IR
nA
V
R
= 30 V
= 50 V
SMBD 2835
SMBD 2836
–
–
–
–
100
100
V
R
AC characteristics
Diode capacitance
C
D
–
–
–
–
4
6
pF
ns
VR
= 0, f = 1 MHz
Reverse recovery time
= 10 mA, I = 10 mA, R
measured at I = 1 mA
t
rr
IF
R
L
= 100 Ω
R
Test circuit for reverse recovery time
Pulse generator: t
p
r
= 100 ns, D = 0.05
= 0.6 ns, R = 50 Ω
Oscillograph: R = 50 Ω
= 0.35 ns
C ≤ 1 pF
t
j
t
r
Semiconductor Group
2
SMBD 2835
SMBD 2836
Forward current I
F
= f (T
A
*; TS
)
Reverse current I
R
= f (T )
A
* Package mounted on epoxy
Forward current I
F
= f (V
F
)
Peak forward current IFM = f (t)
= 25 ˚C
T
A
= 25 ˚C
TA
Semiconductor Group
3
SMBD 2835
SMBD 2836
Forward voltage V
F
= f (T )
A
Semiconductor Group
4
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