RHN7150 [INFINEON]
TRANSISTOR N-CHANNEL; 晶体管N沟道
| 型号： | RHN7150 |
| 厂家： | 
Infineon |
| 描述： | TRANSISTOR N-CHANNEL |
| 文件： | 总14页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ProvisionaData Sheet No. PD-9.720A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN7150
IRHN8150
N-CHANNEL
MEGA RAD HARD
Product Summary
100 Volt, 0.055Ω, MEGA RAD HARD HEXFET
Part Number
IRHN7150
BVDSS
100V
RDS(on)
0.055Ω
0.055Ω
ID
International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta-
bility and breakdown voltage stability at total radiation
doses as high as 1 x 106 Rads (Si). Under identical pre-
and post-radiation test conditions, International Rectifier’s
34A
34A
IRHN8150
100V
RAD HARD HEXFETs retain identical electrical specifi- Features:
cations up to 1 x 105 Rads (Si) total dose.At 1 x 106 Rads
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
■ Radiation Hardened up to 1 x 106 Rads (Si)
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space and
weapons environments.
Absolute Maximum Ratings
Pre-Radiation
Parameter
IRHN7150, IRHN8150
Units
I
@ V
= 12V, T = 25°C Continuous Drain Current
34
D
GS
C
A
I
D
@ V
= 12V, T = 100°C Continuous Drain Current
C
21
GS
I
Pulsed Drain Current ➀
136
DM
@ T = 25°C
P
Max. Power Dissipation
150
W
W/K ➄
V
D
C
Linear Derating Factor
1.2
V
GS
Gate-to-Source Voltage
±20
E
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
500
mJ
AS
I
34
A
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
15
mJ
AR
dv/dt
5.5
V/ns
T
-55 to 150
J
oC
g
T
Storage Temperature Range
Package Mounting Surface Temperature
STG
(for 5 sec.)
300
Weight
2.6 (typical)
To Order
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Pre-Radiation
IRHN7150, IRHN8150 Devices
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0 mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0 mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
0.13
DSS
J
D
R
Static Drain-to-Source
On-State Resistance
GateThreshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
8.0
—
0.055
0.066
4.0
—
25
V
V
= 12V, I = 21A
D
DS(on)
GS
GS
➃
Ω
V
S ( )
= 12V, I = 34A
D
V
g
—
V
V
= V , I = 1.0 mA
GS(th)
fs
DS
DS
GS
D
Ω
≥ 15V, I
= 21A ➃
DS
I
—
—
V
= 0.8 x Max Rating,V
V
DS
= 0V
DSS
DS
GS
= 0.8 x Max Rating
µA
—
250
V
= 0V, T = 125°C
J
GS
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
100
-100
160
35
65
45
190
170
130
—
V
= 20V
= -20V
GSS
GS
nA
nC
I
V
GS
GSS
Q
Q
Q
t
V
=12V, I = 34A
g
gs
gd
d(on)
GS
D
V
= Max. Rating x 0.5
(see figures 23 and 31)
DS
V
= 50V, I = 34A,
DD D
t
R = 2.35Ω
G
(see figure 28)
r
ns
t
d(off)
t
f
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
L
D
S
nH
pF
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
L
Internal Source Inductance
—
2.8
—
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4300
1200
200
—
—
—
V
= 0V, V = 25V
DS
f = 1.0 MHz
(see figure 22)
iss
oss
rss
GS
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
34
136
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.9
570
5.8
V
ns
µC
T = 25°C, I = 34A, V
= 0V ➃
j
SD
rr
RR
S
GS
T = 25°C, I = 34A, di/dt ≤ 100A/µs
j
F
V
≤ 50V ➃
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
R
R
Junction-to-Case
—
—
0.83
thJC
K/W➄
Junction-to-PC board
—
TBD
—
soldered to a copper-clad PC board
thJ-PCB
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IRHN7150, IRHN8150 Devices
Radiation Characteristics
Radiation Performance of Mega Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105
Rads (Si), no change in limits are specified in DC
parameters. At a radiation level of 1 x106 Rads (Si),
leakage remains low and the device is usable with
no change in drive circuitry required.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and
figure 8a and a V
bias condition equal to 80%
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec. Photocurrent and transient voltage wave-
forms are shown in figure 7, and the recommended
test circuit to be used is shown in figure 9.
DSS
of the device rated voltage per note 7 and figure
8b. Pre- and post-radiation limits of the devices irra-
diated to 1 x 105 Rads (Si) are identical and are pre-
sented in Table 1, column 1, IRHN7150. Device
performance limits at a post radiation level of 1 x
106 Rads (Si) are presented in Table 1, column 2,
IRHN8150. The values in Table 1 will be met for ei-
ther of the two low dose rate test circuits that are
used. Typical delta curves showing radiation re-
sponse appear in figures 1 through 5. Typical post-
radiation curves appear in figures 10 through 17.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The ef-
fects on bulk silicon of the type used by Interna-
tional Rectifier on RAD HARD HEXFETs are shown
in figure 6. Single Event Effects characterization is
shown in Table 3.
Table 1. Low Dose Rate ➅ ➆
IRHN7150 IRHN8150
100K Rads (Si) 1000K Rads (Si) Units
min. max. min. max.
Parameter
Test Conditions ➉
BV
V
Drain-to-Source Breakdown Voltage 100
—
4.0
100
1.25
—
—
4.5
V
= 0V, I = 1.0 mA
GS D
DSS
V
Gate Threshold Voltage ➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
2.0
—
—
—
—
V
= V , I = 1.0 mA
GS
DS D
GS(th)
I
100
-100
25
100
-100
50
V
= +20V
= -20V
GSS
GS
nA
I
—
V
GS
GSS
I
—
µA
V
= 0.8 x Max Rating, V = 0
DS GS
DSS
R
0.055
—
0.075
Ω
V
= 12V, I = 21A
GS
D
DS(on)1
On-State Resistance One
V
SD
Diode Forward Voltage ➃
—
1.9
—
1.9
V
T
C
= 25°C, I = 34A,V
= 0V
GS
S
Table 2. High Dose Rate ➇
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min. Typ Max. Min. Typ. Max. Units
Parameter
Test Conditions
Applied drain-to-source voltage
during gamma-dot
V
DSS
Drain-to-Source Voltage
—
—
80
—
—
80
V
I
—
—
0.1
100
—
—
—
1000
—
—
—
0.5
100
—
—
—
A
Peak radiation induced photo-current
PP
di/dt
150 A/µsec Rate of rise of photo-current
µH Circuit inductance required to limit di/dt
L
—
1
Table 3. Single Event Effects ➈
LET (Si)
Fluence Range
V
Bias
(V)
100
V
Bias
GS
(V)
-5
DS
Parameter
Typ.
100
Units
V
Ion
Ni
(MeV/mg/cm2) (ions/cm2) (µm)
BV
28
1 x 105
~41
DSS
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Post-Radiation
IRHN7150, IRHN8150 Devices
V
= 12V
GS
= 21A
I
D
Figure 1. – Typical Response of GateThreshold Voltage
Vs.Total Dose Exposure.
Figure 2. – Typical Response of On-State Resistance
Vs. Total Dose Exposure.
V
≥ 15V
GS
= 21A
I
D
Figure 4. – Typical Response of Drain-to-Source
Breakdown Vs. Total Dose Exposure.
Figure 3. – Typical Response of Transconductance
Vs. Total Dose Exposure.
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Post-Radiation
IRHN7150, IRHN8150 Devices
Figure 5. – Typical Zero Gate Voltage Drain Current
Vs. Total Dose Exposure.
Figure 6. –Typical On-State Resistance Vs.
Neutron Fluence Level
Figure 8a – Gate Stress
of V Equals 12
GSS
Volts During Radiation.
Figure 8b – V
Stress
Figure 7. – Typical Transient Response of
Rad Hard HEXFET During 1 x 1012
Rad (Si)/Sec Exposure.
Figure 9. – High Dose Rate (Gamma Dot)
Test Circuit
DSS
Equals 80% of B
VDSS
During Radiation.
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IRHN7150, IRHN8150 Devices
Radiation Characteristics
Note: Bias Conditions during radiation; V
= 12 V , V = 0 V
dc DS dc
GS
Figure 10. – Typical Output Characteristics Pre-Radiation.
Figure 11. – Typical Output Characteristics, Post radiation
100K Rads (Si).
Figure 13. – Typical Output Characteristics
Post-Radiation 1 Mega Rads (Si)
Figure 12. – Typical Output Characteristics Post-Radiation
300K Rads (Si).
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IRHN7150, IRHN8150 Devices
Radiation Characteristics
Note: Bias Conditions during radiation; V
= 12 V , V = 0 V
dc DS dc
GS
Figure 14. – Typical Output Characteristics Pre-Radiation.
Figure 15. – Typical Output Characteristics, Post-Radiation
100K Rads (Si).
Figure 16. – Typical Output Characteristics, Post-Radiation
300K Rads (Si).
Figure 17. – Typical Output Characteristics, Post-Radiation
1 Mega Rads (Si).
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Pre-Radiation
IRHN7150, IRHN8150 Devices
Figure 18. – Typical Output Characteristics, T = 25°C
Figure 19. – Typical Output Characteristics, T = 150°C
C
C
I
= 34A
D
Figure 20. – Typical Transfer Characteristics
Figure 21. – Normalized On-Resistance Vs. Temperature
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Pre-Radiation
IRHN7150, IRHN8150 Devices
I
D
= 34A
Figure 22. – Typical Capacitance Vs. Drain-to-Source
Voltage.
Figure 23. – Typical Gate Charge Vs. Gate-to-Source
Voltage.
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
100us
1ms
10
10ms
T
T
= 25 oC
C
J
= 150 oC
Single Pulse
1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
Figure 24. – Typical Source-Drain Diode Forward Voltage
Figure 25. – Maximum Safe Operating Area
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Pre-Radiation
IRHN7150, IRHN8150 Devices
1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
thJC C
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Figure 26. – Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Dura ion.
35
30
25
20
15
10
5
0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
Figure 27. – Maximum Drain Current Vs.
Case Temperature.
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Pre-Radiation
IRHN7150, IRHN8150 Devices
Figure 28a – Switching Time Test Circuit
Figure 28b – Switching Time Waveforms
Figure 29a – Unclamped Inductive Test Circuit
Figure 29b – Unclamped Inductive Waveforms
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Pre-Radiation
IRHN7150, IRHN8150 Devices
PEAK I = 34
L
V
DD
= 50V
Figure 29c – Maximum Avalanche Energy Vs. Starting
Junction Temperature.
Figure 30. – Peak Diode Recovery dv/dt Test Circuit
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Pre-Radiation
IRHN7150, IRHN8150 Devices
Figure 31a – Basic Gate Waveform
Figure 31b – Gate Charge Test Circuit
Figure 32. – Typical Time toAccumulated 1% Failure
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IRHN7150, IRHN8150 Devices
Radiation Characteristics
per MIL-STD-750, method 1019. (figure 8a)
➆ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature. (figure 26)
Refer to current HEXFET reliability report.
DS
(pre-radiation)
V
= 0.8 x rated BV
DS
applied and V
DSS
= 0 during irradiation per
GS
MlL-STD-750, method 1019. (figure 8b)
➁ @ V
= 25V, StartingT = 25°C, Peak I = 34A
J L
DD
= [0.5
2
E
V
L
(I ) [BV
/(BV
DSS
-V )]
DSS DD
AS
GS
*
*
*
L
➇ This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse. (figure 9)
= 12V, 25 ≤ R ≤ 200Ω
G
➂ I
V
≤ 34A, di/dt≤ 140 A/µs,
≤ BV , T ≤ 150°C
SD
DD
DSS
J
➈ Study sponsored by NASA. Evaluation performed
at Brookhaven National Labs.
Suggested RG = 2.35Ω
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➉ All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
➄ K/W = °C/W
W/K = W/°C
➅ Total Dose Irradiation with V
Bias.
= 0 during irradiation
GS
+12 volt V
applied and V
DS
GS
Case Outline and Dimensions – SMD-1
Not
1
2
3
4
5
Dimension does not include metallization flash
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