SA120FA60PBF [INFINEON]

Rectifier Diode, 1 Phase, 2 Element, 60A, 600V V(RRM), Silicon,;
SA120FA60PBF
型号: SA120FA60PBF
厂家: Infineon    Infineon
描述:

Rectifier Diode, 1 Phase, 2 Element, 60A, 600V V(RRM), Silicon,

整流二极管 局域网 软恢复二极管 快速软恢复二极管 快速恢复二极管
文件: 总2页 (文件大小:19K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary Data Sheet I27950 08/97  
QUIETIR Series  
SA120FA60  
FAST RECOVERY  
RECTIFIER DIODE  
VF< 1.2V @ 60A  
trr = 150ns  
Description/Features  
The SA120FA..series combines:  
VRRM 200 to 600V  
-
-
-
Fast soft recovery QUIET-IR Rectifiers  
In an industry standard SOT 227 isolated module package  
The QUIET-IR Rectifiers series has been optimized for  
combined short reverse recovery time and low forward  
voltage drop.  
-
-
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling  
conditions.  
The direct bonded copper internal structure garantees  
isolation exceeding standard requirements  
Typical application are :  
-
-
Output rectification and freewheeling in inverters, chopper  
and welders.  
Input rectification where severe restriction on conducted  
EMI shall be met.  
Major Ratings and Characteristics  
Characteristics SA120FA60 Units  
I
Sinusoidalwaveform  
60  
600  
A
V
F(AV)  
V
RRM  
I
1300  
1.2  
A
FSM  
V
@60A,T =25°C  
J
V
F
t
@1A,-100A/µs  
150  
ns  
°C  
rr  
SOT 227  
T
-40to150  
J
1
SA120FA60  
Preliminary Data Sheet I27950 08/97  
Voltage Ratings  
VRRM , maximum  
peak reverse voltage  
V
VRSM , maximum non repetitive  
IRRM  
150°C  
mA  
PartNumber  
peak reverse voltage  
V
SA120FA60  
600  
700  
20  
Absolute Maximum Ratings  
Parameters  
SA120FA60 Units  
Conditions  
IF(AV) Max.AverageForwardCurrent  
60  
A
@ TC=98°C,180°conductionhalfsinewave  
IFSM Max.PeakOneCycleNon-Repetitive  
SurgeCurrent  
1100  
1300  
6050  
8550  
60500  
10msSinepulse,ratedVRRMapplied  
10msSine pulse,novoltagereapplied  
10msSinepulse,ratedVRRMapplied  
10msSinepulse,novoltagereapplied  
t=0.1to10ms,novoltagereapplied  
A
I2t  
Max. I2tforfusing  
A2s  
I2t Max. I2tforfusing  
A2s  
Electrical Specifications  
Parameters  
SA120FA60 Units  
Conditions  
VFM Max. ForwardVoltageDrop  
1.2  
4.2  
V
mΩ  
V
@ 60A, TJ = 25°C  
rt  
Forwardsloperesistance  
TJ = 150°C  
VF(TO) Thresholdvoltage  
0.742  
3000  
0.1  
Vins RMS isolation voltage  
IRM Max.ReverseLeakageCurrent  
V
TJ = 25 °C all terminal shorted f=50Hz, t=1s  
TJ = 25 °C  
VR = rated VRRM  
mA  
20  
TJ = 150  
Recovery Characteristics  
Parameters  
SA120FA60 Units  
Conditions  
IF @ 60Apk  
trr  
Reverse Recovery Time  
Reverse Recovery Current  
Reverse Recovery Charge  
Snap Factor  
190  
3.4  
0.5  
0.5  
ns  
A
Irr  
Qrr  
S
@ 25A/ µs  
µC  
@ 25°C  
Thermal-Mechanical Specifications  
Parameters  
SA120FA60 Units  
Conditions  
TJ  
Max.JunctionTemperatureRange  
-40to150  
-40to150  
0.5  
°C  
°C  
Tstg Max.StorageTemperatureRange  
RthJC Max.ThermalResistanceJunction  
°C/W  
DCoperation  
toCase  
RthCS TypicalThermalResistance,Caseto  
Heatsink  
0.1  
°C/W  
Mountingsurface,smoothandgreased  
wt  
T
ApproximateWeight  
MountingTorque  
30  
1.3  
1.5  
g
Min.  
Kg-cm  
Max.  
2

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