SAE800 [INFINEON]
Programmable Single-/Dual-/Triple- Tone Gong; 可编程单/双/款三音功
| 型号： | SAE800 |
| 厂家： | 
Infineon |
| 描述： | Programmable Single-/Dual-/Triple- Tone Gong |
| 文件： | 总14页 (文件大小：984K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Programmable
SAE 800
Single-/Dual-/Triple- Tone Gong
Preliminary Data
Bipolar IC
Features
● Supply voltage range 2.8 V to 18 V
● Few external components (no electrolytic capacitor)
● 1 tone, 2 tones, 3 tones programmable
● Loudness control
● Typical standby current 1 µA
● Constant current output stage (no oscillation)
● High-efficiency power stage
● Short-circuit protection
P-DIP-8-4
● Thermal shutdown
P-DSO-8-1
Type
Ordering Code
Q67000-A8339
Q67000-A8340
Package
▼ SAE 800
▼ SAE 800 G
▼ New type
P-DIP-8-4
P-DSO-8-1 (SMD)
Functional Description
The SAE 800 is a single-tone, dual-tone or triple-tone gong IC designed for a very wide supply
voltage range. If the oscillator is set to f0 = 13.2 kHz for example, the IC will issue in triple-tone-
mode the minor and major third e2 – C sharp – a, corresponding to 660 Hz – 550 Hz – 440 Hz, in
dual-tone-mode the minor third e2 – C sharp, and in single-tone-mode the tone e2 (derived from
the fundamental frequency f0 ; f1 = f0 / 20, f2 = f0 / 24, f3 = f0 / 30).
When it is not triggered, the IC is in a standby state and only draws a few µA. It comes in a compact
P-DIP-8-1 or P-DSO-8-1 (SMD) package and only requires a few external components.
Semiconductor Group
1
09.94
SAE 800
SAE 800
SAE 800 G
Pin Configuration
(top view)
Pin Definitions and Functions
Pin
1
Symbol
GND
Q
Function
Ground
2
Output
3
VS
Supply Voltage
Loudness Control
Oscillator Resistor
Oscillator Capacitor
Trigger 2 (dual tone)
Trigger 1 (single tone)
4
L
5
ROSC
COSC
E2
6
7
8
E1
Functional Description (cont’d)
An RC combination is needed to generate the fundamental frequency (pin ROSC , COSC). The volume
can be adjusted with another resistor (pin L). The loudspeaker must be connected directly between
the output Q and the power supply VS . The current-sink principle combined with an integrated
thermal shutdown (with hysteresis) makes the IC overload-protected and shortcircuit-protected.
There are two trigger pins (E1, E2) for setting single-tone, dual-tone or triple-tone mode.
Semiconductor Group
2
SAE 800
Block Diagram
Semiconductor Group
3
SAE 800
Circuit Description
Trigger
Positive pulses on inputs E1 and/or E2 trigger the IC. The hold feedback in the logic has a delay of
several milliseconds. After this delay has elapsed, the tone sequence is started. This prevents
parasitic spikes from producing any effect on the trigger pins.
The following table shows the trigger options:
E1
E2
Mode
Issued Sequence
Minor and major third
Minor third
Triggered
Grounded/open
Triggered
Triggered
Triggered
Grounded/open
Triple-tone
Dual-tone
Single-tone
1st tone of minor third
Oscillator
This is a precision triangle oscillator with an external time constant (R x C). Capacitor CC on pin COSC
is charged by constant current to 1 V and then discharged to 0.5 V. The constant current is obtained
on pin ROSC with an external resistor RR to ground.
When the voltage on COSC is building up, the logic is reset at 350 mV. This always ensures that a
complete tone sequence is issued. If the oscillator pin is short-circuited to GND during operation,
the sequence is repeated.
The following applies:
∆VC x CC = IC x T/2 with IC = VR/2RR = 1.2 V/2RR
f0 = 5/8 x 1/(RR x CC)
Voltages on Pin COSC
Semiconductor Group
4
SAE 800
Logic
The logic unit contains the complete sequence control. The oscillator produces the power-on reset
and the clock frequency. Single-tone, dual-tone or triple-tone operation is programmed on inputs
E1 and E2. The 4-bit digital/analog converters are driven in parallel. In the event of oscillator
disturbance, and after the sequence, the dominant stop output is set. By applying current to pin L,
the sequence can be shortened by a factor of 30 for test purposes.
The following figure shows the envelope of the triple-tone sequence:
Envelope of maximum amplitudes of three
superimposed tones on Q (time scale for
f
OSC = 13.2 kHz)
Ratio of maximum amplitudes
M3 : M2 : M1 = 1 : 0.89 : 0.67
Envelope of the Triple-Tone Sequence
Semiconductor Group
5
SAE 800
Digital / Analog Converter, Loudness and Junction Control
The DAC converts the 4-bit words from the logic into the appropriate staircase currents with the
particular tone frequency. The sum current II drives the following current amplifier. The loudness
generator produces the DAC reference current IL for all three tones. This requires connecting an
external resistor to ground. The chip temperature is monitored by the junction control. At
temperatures of more then approx. 170 ˚C the stop input will switch the output current II to zero. The
output current is enabled again once the chip has cooled down to approx. 150 ˚C.
Current Amplifier
The current amplifier with a gain of 1600 boosts the current II from approx. 470 µA maximum to
approx. 750 mA maximum. The output stage consists of an NPN transistor with its emitter on power
GND and collector on pin Q.
The current control insures that the output stage only conducts defined currents. In conjunction with
the integrated thermal shutdown, this makes the configuration shortcircuit-protected within wide
limits. Because of the absence of feedback the circuit is also extremely stable and therefore
uncritical in applications. Resistor RL on pin L sets the output voltage swing. This assumes that the
resistive component of the loudspeaker impedance RQ responds similarly as the resistance RL.
The output amplitude of the current II reaches the maximum IImax 3 x VL / RL at a time t of 2.33 s
(only 3 tone mode), so RL has to be scaled for this point.
The following applies:
IQ = IImax x B = (VS – Vsat) / RQ ≈ 0.8 VS / RQ
3 x B x (VL / RL) ≈ 0.8 VS / RQ
the result is:
RL = RQ x 3 x B x (VL / 0.8 VS)
RL = RQ x K x (VL / 0.8 VS)
with: B = 1600
with: K = 4800
Semiconductor Group
6
SAE 800
Application Hints and Application Circuit
1) Loudness Resistor (max. Load Current of 3-Tone Signal with Ensured Ratio of Amplitudes)
0.8 VS / RQ ≈ (VL / RL) x K
RL = (VL / 0.8 VS) x RQ x K; K = 4800
Example: RQ = 8 Ω; VS = 5 V; VL = 1.2 V
RL = (1.2 / 4) x 8 Ω x 4800 ≈ 12 kΩ
2) Oscillator Elements RR , CC
f = 5 / 8 x 1 / (RR x CC)
Example: f = 13.2 kHz; CC = 4.7 nF
RR = 5 / (8 x 13.2 x 4.7) x 106 Ω ≈ 10 kΩ
The following is a typical application circuit
Application Circuit
Semiconductor Group
7
SAE 800
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
min.
– 0.3
– 5
max.
24
Supply voltage
VS
V
V
Input voltage at E1, E2
VE1, E2
24
Current at output Q
Current at input pins E1, E2
IQ
IE1, E2
– 50
– 2
750
3
mA
mA
Current at pin ROSC
Current at pin L
Current at pin COSC
IR
IL
IC
– 300
– 300
– 200
200
200
200
µA
µA
µA
Junction temperature
Storage temperature
Tj
– 50
– 50
150
150
˚C
˚C
Tstg
Operating Range
Supply voltage
VS
Tj
2.8
18
V
Junction temperature
Oscillator frequency at COSC
– 25
125
100
˚C
kHz
fC
Current at pin ROSC
Current for test mode at pin L
Current at pin L
IR
IR
IL
– 200
90
– 200
– 10
110
– 10
µA
µA
µA
Input voltage at E1, E2
VE1, E2
– 4
18
V
Thermal resistance
junction-air (P-DIP-8-4)
junction-air (P-DSO-8-1)
Rth JA
Rth JA
100
180
K/W
K/W
Semiconductor Group
8
SAE 800
Characteristics
T = – 25 to 125˚C; VS = 2.8 to 18 V
j
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
typ.
max.
Supply Section
Standby current
Quiescent current; pin L open
ISt
IQu
1
5
10
10
µA
mA
Output Section
Peak output power (tone 3)
VS = 2.8 V; RQ = 4 Ω; RL = 8.2 kΩ PQ
250
125
450
225
450
330
165
600
300
600
mW
mW
mW
mW
mW
VS = 2.8 V; RQ = 8 Ω; RL = 18 kΩ
VS = 5.0 V; RQ = 8 Ω; RL = 10 kΩ
PQ
PQ
A
VS = 5.0 V; RQ = 16 Ω; RL = 18 kΩ PQ
VS = 12 V; RQ = 50 Ω; RL = 33 kΩ PQ
Output level differences:
tone 1 to 3
tone 2 to 3
1)
a13
a23
– 1
– 1
1
1
dB
dB
A
A
2)
Biasing Section
Voltage at pin ROSC ; RR = 10 kΩ
Voltage at pin L; RL = 10 kΩ
VR
VL
1.2
1.2
V
V
Oscillator Section
Amplitude
∆VC
0.5
V
Frequency RR = 10 kΩ;
CC = 4.7 nF
Oscill. drift vs. temperature
f0
13.2
kHz
-4
DT
DV
– 3
+ 3
10 /K
-3
Oscill. drift vs. supply voltage
1
10 /K
Input Section
Triggering voltage at E1, E2
Triggering current at E1, E2
Noise voltage immunity at E1, E2 VE1 , E2
VE1 , E2
IE1 , E2
1.6
100
V
µA
V
0.3
10
Triggering delay at f0 = 13.2 kHz
tdT
2
ms
1) a13 = 20 x log (M1 / (0.67 x M3))
2) a23 = 20 x log (M2 / (0.89 x M3))
Semiconductor Group
9
SAE 800
Output Peak Voltage VQ versus
Loudness-Current IL
Max. Output Power PQ versus
Loudness-Current IL
Power Dissipation Pv of Output Stage
versus Loudness-Current IL
Peak Current IQ versus Loudness-Current IL
*) Note that IQ = f (IL) varies between 0 and K IL during tone sequence. Thereby the maximum of the power
dissipation during the tone sequence is the maximum of Pv (in diagram) between IL = 0 and chosen IL = VL/RL.
Semiconductor Group
10
SAE 800
Output Peak Voltage VQ versus
Loudness-Current IL
Max. Output Power PQ versus
Loudness-Current IL
Power Dissipation P of Output Stage
Peak Current IQ versus Loudness-Current IL
v
versus Loudness-Current IL
*) Note that IQ = f (IL) varies between 0 and K IL during tone sequence. Thereby the maximum of the power
dissipation during the tone sequence is the maximum of Pv (in diagram) between IL = 0 and chosen IL = VL/RL.
Semiconductor Group
11
SAE 800
Circuit for SAE 800 Application in Home Chime Installation Utilizing AC and DC Triggering
for 1, 2 or 3 Tone Chime; Adjustable Volume
PCB layout information: Because of the peak currents at VS , Q and GND the lines should be
designed in a flatspread way or as star pattern.
Semiconductor Group
12
SAE 800
Circuit for SAE 800 Application in Home Chime Installation for Operation without Battery
Semiconductor Group
13
SAE 800
Package Outlines
Plastic-Package, P-DIP-8-4
(Plastic Dual In-Line Package)
Plastic-Package, P-DSO-8-1 (SMD)
(Plastic Dual Small Outline)
SMD = Surface Mounted Device
Semiconductor Group
Dimensions in mm
14
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