SC202S030A5BPBF [INFINEON]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30V V(RRM), Silicon, DIE-2;
| 型号： | SC202S030A5BPBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 30V V(RRM), Silicon, DIE-2 二极管 |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0508J rev. B 05/01
SC202.....5.. Series
SCHOTTKY DIE 200 x 200 mils (Monolithic Dual)
0.25 ± 0.01
(10 ± 0.4)
a
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).
2. CONTROLLING DIMENSION: (MILS).
Anode
3. DIMENSIONS AND TOLERANCES:
a = 5.08 + 0, - 0.01
(200 + 0, - 0.4)
D
Anode
b = 5.08 + 0, - 0.01
(200 + 0, - 0.4)
c = 4.92 + 0, - 0.01
(193 + 0, - 0.4)
c
d = 2.43 + 0, - 0.01
(95 + 0, - 0.4)
Ø
Ø = 1 ± 0.15
(40 ± 6)
40 (157)
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
Wafer flat alligned with
side b of the die
D = Reject Ink Dot (only on non-conforming dies)
5. SAWING:
Recommended Blade
SEMITEC S1025 QS00 Blade
Sawing Street
0.05 + 0, - 0.005
(2 + 0, - 0.2)
NOT TO SCALE
1
SC202.....5. Series
Preliminary Data Sheet I0508J rev. B 05/01
Electrical Characteristics
Device
#
T
Max.
V
(V)
Max. I @ 25°C
R
(*) Max. V @ I
F F
J
(°C)
R
(mA)
(V)
SC202S020A5
SC202S030A5
SC202S045A5
SC202S060A5
SC202H100A5
150
150
150
150
150
20
8
0.42 V @ 40A per die, TJ= 25°C
0.46V @ 30A per die, TJ= 25°C
0.51 V @ 20A per die, TJ= 25°C
0.54V @ 15A per die, TJ= 25°C
0.69 V @ 10A per die, TJ= 25°C
30
45
2
2
60
2
100
0.55
(*) For reference only, VF do not include voltage drop across wire bonding resistance
Mechanical Data
Device
MetalThickness
FrontMetal
MetalThickness
BackMetal
#
SC202....A5..
Bondable
--
Al/Si 30 kÅ
--
Ti 1 kÅ
Ni 4 kÅ
Ag 6 kÅ
Visual Inspection : see IR internal Spec. # 6373-2064
RecommendedStorageEnvironment: Store in original container, in dessicated nitrogen, with no contamination.
Shelf life for parts stored in above condition is 2 years.
If the storage is done in normal atmosphere shelf life is reduced to six months.
Packaging
Device
Description
Minimum Order Quantity
Wafer in Sale Package
#
SC202....5B.
Inked Probed Unsawn Wafer (Wafer in Box)
48
2
SC202.....5. Series
Preliminary Data Sheet I0508J rev. B 05/01
Ordering Information Table
Device Code
SC 202
S
060
A
5
B
3
4
5
7
1
2
6
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Schottky Die
Chip Dimension in Mils: 200 x 200 Dual Monolithic
Process (see Electrical Characteristics Table)
Voltage code: Code = VRRM
H = 830 Process
R = OR' ing Process
S = Standard Process
Chip surface metallization (Al)
Wafer Diameter in inches
Packaging: B = inked probed unsawn wafers (in box)
Wafer in Box
ROUNDCONTAINER
TYVEK DISK
FOAM DISK
3
SC202.....5. Series
Preliminary Data Sheet I0508J rev. B 05/01
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
4
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