SD103N [INFINEON]
FAST RECOVERY DIODES Stud Version; 快恢复二极管梭哈版本
| 型号： | SD103N |
| 厂家： | 
Infineon |
| 描述： | FAST RECOVERY DIODES Stud Version |
| 文件： | 总9页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2062 rev. B 12/96
SD103N/R SERIES
FAST RECOVERY DIODES
Stud Version
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
110A
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version JEDEC DO-30
Maximum junction temperature 125°C
TypicalApplications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD103N/R
Units
110
85
A
°C
A
@ TC
IF(RMS)
IFSM
173
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
3570
A
3730
A
I2t
64
KA2s
KA2s
V
58
VRRM range
400 to 2500
1.0 to 2.0
25
t
range
µs
°C
°C
rr
case style
DO-205AC (DO-30)
@ TJ
TJ
- 40 to 125
1
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SD103N/R Series
Bulletin I2062 rev. B 12/96
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM max. repetitive
VRSM , maximum non-
IRRM max.
Type number
SD103N/R..S10
peak and off-state voltage
V
repetitive peak voltage
V
TJ = 125°C
mA
04
08
10
12
14
16
20
25
400
800
500
900
1000
1200
1400
1600
2000
2500
1100
1300
1500
1700
2100
2600
35
SD103N/R..S15
SD103N/R..S20
Forward Conduction
Parameter
SD103N/R Units Conditions
IF(AV) Max. average forward current
@ Case temperature
110
85
A
180° conduction, half sine wave.
°C
IF(RMS) Max. RMS current
173
3570
3730
3000
3140
64
A
DC @ 75°C case temperature
IFSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive forward current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
58
KA2s
45
41
I2√t
Maximum I2√t for fusing
636
KA2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level of threshold voltage
F(TO)2 High level of threshold voltage
1.36
1.94
2.55
1.11
2.23
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
V
V
(I > π x IF(AV)), TJ = TJ max.
rf1
rf2
VFM
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
(I > π x IF(AV)), TJ = TJ max.
V
I = 345A, T = 25°C, t = 400 µs square pulse
pk p
J
Recovery Characteristics
Testconditions
Max.values @TJ=125°C
TJ=25oC
Code
typical t
I
di/dt
V
t
Q
I
rr
rr
pk
r
rr
rr
@ 25% IRRM Square Pulse
@ 25% IRRM
(µs)
(A)
(A/µs)
(V)
(µs)
(µC)
(A)
27
S10
1.0
1.6
21
S15
S20
1.5
2.0
350
25
-30
2.3
3.2
61
75
37
39
2
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SD103N/R Series
Bulletin I2062 rev. B 12/96
Thermal and Mechanical Specification
Parameter
SD103N/R
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
0.16
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermalresistance, casetoheatsink
DC operation
K/W
0.10
Mounting surface, smooth, flat and greased
T
Mounting torque ± 10%
15.5
Not lubricated threads
Lubricated threads
Nm
g
13.5
wt
Approximate weight
Case style
120
DO-205AC(DO-30)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.011
0.016
0.021
0.029
0.041
0.012
0.019
0.023
0.030
0.041
K/W
60°
30°
Ordering Information Table
Device Code
SD 10
3
R
25 S20
P
B
C
7
1
2
3
5
6
8
9
4
1
2
3
4
-
-
-
-
Diode
Essential part number
3 = Fast recovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
6
7
-
-
-
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
code (see Recovery Characteristics table)
t
rr
P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A
M = Stud base DO-205AC (DO-30) M12 X 1.75
8
-7 B = Flag top terminals (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
9
-
C = Ceramic housing (over 1600V)
V = Glass-metal seal (only up to 1600V)
3
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SD103N/R Series
Bulletin I2062 rev. B 12/96
Outline Table
CERAMIC HOUSING
16.5 (0.65)
MAX.
2.6 (0.10) MAX.
DIA. 8.5 (0.33) NOM.
2
C.S. 16mm
(0.015 s.i.)
DIA. 22.5 (0.88) MAX.
SW 27
Conforms to JEDEC DO-205AC (DO-30)
All dimensions in millimeters (inches)
1/2"-20UNF-2A*
* FOR METRIC DEVICE: M12 X 1.75
GLASS-METAL SEAL
16.5 (0.65)
2.6 (0.10) MAX.
MAX.
DIA. 8.5 (0.33) NOM.
2
C.S. 16mm
(0.015 s.i.)
DIA. 23.5 (0.93) MAX.
SW 27
1/2"-20UNF-2A*
* FOR METRIC DEVICE: M12 X 1.75
4
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SD103N/R Series
Bulletin I2062 rev. B 12/96
Outline Table
CERAMIC HOUSING
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
DIA. 22.5 (0.88) MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75
DO-205AC (DO-30) Flag
All dimensions in millimeters (inches)
GLASS-METAL SEAL
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
DIA. 23.5 (0.93) MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75
5
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SD103N/R Series
Bulletin I2062 rev. B 12/96
130
130
120
110
100
90
SD103N/ R Se rie s
SD103N/ R Se rie s
R
(DC ) = 0.16 K/ W
R
(DC) = 0.16 K/ W
thJ C
thJC
120
110
100
90
C o nd uc tio n An gle
C o nd uc tio n Perio d
30°
30°
60°
60°
90°
90°
80
80
120°
120°
180°
70
70
180°
DC
60
60
0
20
40
60
80
100
120
0
20 40 60 80 100 120 140 160 180
Ave ra g e Forw a rd C urre nt (A)
Ave ra g e Forw a rd Curre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
450
400
350
300
250
200
150
100
50
280
240
200
160
120
80
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
C o nd uctio n Ang le
C o nd uc tio n Pe rio d
SD103N/R Se rie s
SD103N/ R Se rie s
40
T
= 125°C
T = 125°C
J
J
0
0
0
20
40
60
80
100
120
0
20 40 60 80 100 120 140 160 180
Ave ra g e Forwa rd C urre nt (A)
Ave ra g e Forwa rd C urre nt (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
3500
3000
2500
2000
1500
1000
500
4500
4000
3500
3000
2500
2000
1500
1000
500
At An y Ra te d Loa d C on d ition And With
Ma xim um No n Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion .
Ra te d V
Ap p lie d Follo wing Surg e .
RRM
Initia l T = 125 °C
In itia l T = 125 °C
J
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
SD103N/ R Se rie s
SD103N/ R Se rie s
1
10
100
0.01
0.1
Pulse Tra in Dura tion (s)
1
Numb e r O f Eq ua l Am p litud e Ha lf C yc le Cu rre nt Pulse s (N)
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
6
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SD103N/R Series
Bulletin I2062 rev. B 12/96
1
1000
Ste a d y Sta te Va lue :
= 0.16 K/ W
SD103N/ R Se rie s
R
th JC
(DC Op e ra tio n)
0.1
100
1
T = 25 °C
J
0.01
0.001
10
11
T = 125 °C
J
SD103N/ R Se rie s
0
..5
11 11.5
2
2.5
3
3.5
4
0.001
0.01
0.1
1
10
Insta nta n e o us Forwa rd Vo lta g e (V)
Sq ua re Wa ve Pulse Dura tio n (s)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
140
V
120
100
80
60
40
20
0
FP
I
T = 125°C
J
T
= 25°C
J
SD103N/ R..S20 Se rie s
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Ra te Of Rise Of Fo rw a rd C urre nt d i/ d t (A/use c )
Fig. 9 - Typical Forward Recovery Characteristics
1.8
1.6
1.4
1.2
60
90
80
SD103N/R..S10 Se rie s
I
= 350 A
I
= 350 A
FM
FM
T = 125 °C ; V = 30V
r
J
Sq ua re Pulse
Sq u a re Pulse
50
40
30
20
10
70
60
50
40
30
I
= 350 A
FM
Sq ua re Pulse
200 A
100 A
200 A
200 A
100 A
SD103N/R..S10 Se rie s
T = 125 °C ; V = 30V
SD103N/ R..S10 Se rie s
T = 125 °C ; V = 30V
20
10
100 A
r
J
r
J
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs) Ra te Of Fa ll Of Fo rwa rd C urre n t - d i/d t (A/µs)
Ra te Of Fa ll Of Forwa rd Curre n t - d i/d t (A/µs)
Fig. 10 - Recovery Time Characteristics
Fig. 11 - Recovery Charge Characteristics
Fig. 12 - Recovery Current Characteristics
7
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SD103N/R Series
Bulletin I2062 rev. B 12/96
2.7
140
130
120
110
100
90
110
100
90
80
70
60
50
40
30
20
10
I
= 350 A
I
= 350 A
FM
SD103N/ R..S15 Se rie s
FM
2.6
Sq ua re Pulse
T = 125 °C ; V = 30V
Sq u a re Pulse
r
J
2.5
2.4
2.3
2.2
2.1
2
I
= 350 A
FM
200 A
100 A
Sq ua re Pulse
200 A
80
70
100 A
200 A
100 A
60
1.9
1.8
1.7
1.6
SD103N/ R..S15 Se rie s
T = 125 °C ; V = 30V
SD103N/ R..S15 Se rie s
T = 125 °C ; V = 30V
50
r
J
r
J
40
30
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
10
100
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Ra te Of Fa ll Of Fo rwa rd Curre nt - d i/d t (A/µs)
Fig. 13 - Recovery Time Characteristics
Fig. 14 - Recovery Charge Characteristics
Fig. 15 - Recovery Current Characteristics
170
130
120
4.5
I
= 350 A
SD103N/R..S20 Se rie s
FM
160
150
140
130
120
110
100
90
I
= 350 A
FM
Sq ua re Pulse
T = 125 °C ; V = 30V
r
J
110
100
90
4
3.5
3
Sq ua re Pulse
200 A
I
= 350 A
FM
200 A
100 A
80
Sq ua re Pulse
70
100 A
60
50
40
30
20
10
200 A
2.5
2
80
70
SD103N/ R..S20 Se rie s
SD103N/ R..S20 Se rie s
T = 125 °C; V = 30V
100 A
60
T = 125 °C ; V = 30V
J
r
J
r
50
1.5
10
40
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
100
Ra te Of Fa ll Of Fo rwa rd Cu rrent - d i/d t (A/µs)
Ra te O f Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Fig. 16 - Recovery Time Characteristics
Fig. 17 - Recovery Charge Characteristics
Fig. 18 - Recovery Current Characteristics
1E4
20 jo ule s p e r p ulse
20 jo ules p er p ulse
10
10
4
tp
4
2
1
2
1
0.4
1E3
0.4
0.2
0.2
0.1
0.04
0.1
0.06
0.02
0.04
0.01
1E2
SD103N/ R..S10 Se rie s
Sinusoid a l Pu lse
SD103N/ R..S10 Se rie s
Tra p e zo id a l Pulse
T = 125°C , VRRM = 1120 V
T = 125°C , VRRM = 1120V
J
J
tp
d v/ d t=1000 V/ µs
d v/d t=1000V/ µs, d i/ d t=50A/ µs
1E1
1E1
1E1
1E441
1E2
1E3
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
8
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SD103N/R Series
Bulletin I2062 rev. B 12/96
1E4
20 jo ule s p e r p ulse
20 jo ule s p e r p ulse
10
10
4
4
2
2
1
1
0.4
1E3
1E2
1E1
0.4
0.2
0.2
0.04
0.02
0.01
0.1
SD103 N/ R..S15 Se ries
Tra p ezoid a l Pulse
T = 125°C, VRRM= 1120V
SD103N/ R.. S15 Se rie s
Sinu soid a l Pu lse
T = 125°C , VRRM = 1120V
J
J
tp
d v/d t=1000V/ µs, d i/ d t=50A/ µs
tp
d v/ d t=1000V/ µs
1E4 1E1
41
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se w id th (µs)
Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
1E1
20 jo ule s p e r p u lse
20 jo ule s p e r p ulse
10
4
10
4
2
2
1
1
0.4
0.4
0.2
0.1
0.2
0.04
0.02
0.01
SD103N/ R..S20 Se rie s
Tra p e zo id a l Pu lse
SD103N/ R..S20 Se rie s
Sinu soid a l Pu lse
T
= 125°C , VRRM= 1760V
J
T
J
= 125°C, VRRM = 1760V
tp
d v/d t=10 00V/ µs, d i/ d t=50A/ µs
tp
d v/ d t=1000V/ µs
1E1
1E4
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Ba se width (µs)
Pulse Ba se wid th (µs)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
9
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