SD103R25S20PBC [INFINEON]
DISCRETE POWER DIODES and THYRISTORS; 分立功率二极管及闸流体
| 型号： | SD103R25S20PBC |
| 厂家： | 
Infineon |
| 描述： | DISCRETE POWER DIODES and THYRISTORS |
| 文件： | 总10页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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2/A
SD103N/R SERIES
FAST RECOVERY DIODES
Stud Version
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
110A
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version JEDEC DO-30
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD103N/R
Units
110
85
A
°C
A
@ TC
IF(RMS)
IFSM
173
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
3570
A
3730
A
I2t
64
KA2s
KA2s
V
58
VRRM range
400 to 2500
1.0 to 2.0
25
t
range
µs
°C
°C
rr
case style
DO-205AC (DO-30)
@ TJ
TJ
- 40 to 125
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VRRM max. repetitive
VRSM , maximum non-
IRRM max.
Type number
SD103N/R..S10
Code peak and off-state voltage
V
repetitive peak voltage
TJ = 125°C
mA
V
04
08
10
12
14
16
20
25
400
800
500
900
1000
1200
1400
1600
2000
2500
1100
1300
1500
1700
2100
2600
35
SD103N/R..S15
SD103N/R..S20
12
Forward Conduction
Parameter
SD103N/R Units Conditions
IF(AV) Max. average forward current
@ Case temperature
110
85
A
180° conduction, half sine wave.
°C
IF(RMS) Max. RMS current
173
3570
3730
3000
3140
64
A
DC @ 75°C case temperature
IFSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive forward current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
58
KA2s
45
41
I2√t
Maximum I2√t for fusing
636
KA2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level of threshold voltage
1.36
1.94
2.55
1.11
2.23
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
V
VF(TO)2 High level of threshold voltage
(I > π x IF(AV)), TJ = TJ max.
rf1
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
2222222222222
rf2
(I > π x IF(AV)), TJ = TJ max.
I = 345A, T = 25°C, t = 400 µs square pulse
pk
VFM
V
p
J
Recovery Characteristics
Testconditions
Max.values @TJ=125°C
TJ = 25oC
Code
typical t
I
di/dt
V
t
Q
I
rr
pk
r
rr
rr
rr
@ 25% IRRM Square Pulse
@ 25% IRRM
(µs)
(A)
(A/µs) (V)
(µs)
(µC)
(A)
27
S10
1.0
1.6
21
S15
S20
1.5
2.0
350
25
-30
2.3
3.2
61
75
37
39
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
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Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
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ies
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 9 - Typical Forward Recovery Characteristics
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Fig. 10 - Recovery Time Characteristics
Fig. 11 - Recovery Charge Characteristics
Fig. 12 - Recovery Current Characteristics
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Fig. 13 - Recovery Time Characteristics
Fig. 14 - Recovery Charge Characteristics
Fig. 15 - Recovery Current Characteristics
Fig. 16 - Recovery Time Characteristics
Fig. 17 - Recovery Charge Characteristics
Fig. 18 - Recovery Current Characteristics
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Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
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Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
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Thermal and Mechanical Specification
Parameter
SD103N/R
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
0.16
°C
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
DC operation
K/W
0.10
Mounting surface, smooth, flat and greased
Not lubricated threads
T
Mounting torque ± 10%
15.5
Nm
g
13.5
Lubricated threads
wt
Approximate weight
Case style
120
DO-205AC(DO-30)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.011
0.016
0.021
0.029
0.041
0.012
0.019
0.023
0.030
0.041
K/W
23
60°
30°
Ordering Information Table
Device Code
SD 10
3
R
25 S20 P
B
C
7
8
9
1
2
5
3
6
4
1
2
3
4
-
-
-
-
Diode
Essential part number
3 = Fast recovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
6
7
-
-
-
Voltagecode:Codex100=V
(see Voltage Ratings table)
RRM
t code (see Recovery Characteristics table)
rr
P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A
M = Stud base DO-205AC (DO-30) M12 X 1.75
8
-7 B = Flag top terminals (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
9
-
C = Ceramic housing (over 1600V)
V = Glass-metal seal (only up to 1600V)
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Outline Table
CERAMIC HOUSING
16.5 (0.65)
MAX.
2.6 (0.10) MAX.
DIA. 8.5 (0.33) NOM.
2
C.S. 16mm
(0.015 s.i.)
DIA. 22.5 (0.88) MAX.
12
SW 27
Conforms to JEDEC DO-205AC (DO-30)
All dimensions in millimeters (inches)
1/2"-20UNF-2A*
* FOR METRIC DEVICE: M12 X 1.75
GLASS-METAL SEAL
16.5 (0.65)
2.6 (0.10) MAX.
MAX.
DIA. 8.5 (0.33) NOM.
DIA. 23.5 (0.93) MAX.
2
C.S. 16mm
(0.015 s.i.)
2222222222222
SW 27
1/2"-20UNF-2A*
* FOR METRIC DEVICE: M12 X 1.75
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Outline Table
CERAMIC HOUSING
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
DIA. 22.5 (0.88) MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75
23
DO-205AC (DO-30) Flag
All dimensions in millimeters (inches)
GLASS-METAL SEAL
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
DIA. 23.5 (0.93) MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75
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