SD1053C22S30LPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 920A, 2200V V(RRM), Silicon, DO-200AB, BPUK-2;
| 型号： | SD1053C22S30LPBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 920A, 2200V V(RRM), Silicon, DO-200AB, BPUK-2 快速恢复大电源 高压快速恢复二极管 高压快速恢复大电源 高功率电源 |
| 文件： | 总10页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2079 rev. B 04/00
SD1053C..L SERIES
Hockey Puk Version
FAST RECOVERY DIODES
Features
920A
1050A
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 3000V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AB (B-PUK)
Maximum junction temperature 150°C
Typical Applications
Snubber diode for GTO
case style DO-200AB (B-PUK)
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
SD1053C..L
Parameters
IF(AV)
Units
S20
1050
55
S30
920
A
°C
A
@ T
55
hs
IF(RMS)
IFSM
1940
15000
15700
1700
13000
13610
@ 50Hz
@ 60Hz
A
A
VRRM range
1800 to 2500 1800 to 3000
V
t
2.0
25
3.0
25
µs
°C
°C
rr
@ TJ
TJ
- 40 to 150
1
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SD1053C..L Series
Bulletin I2079 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
IRRM max.
Type number
peak reverse voltage
V
repetitive peak rev. voltage
V
@ TJ = TJ max.
mA
18
22
25
18
22
25
28
30
1800
2200
2500
1800
2200
2500
2800
3000
1900
2300
2600
1900
2300
2600
2900
3100
SD1053C..S20L
50
SD1053C..S30L
Forward Conduction
SD1053C..L
Parameter
Units Conditions
S20
S30
IF(AV) Max. average forward current 1050(450) 920(390)
A
°C
A
180° conduction, half sine wave
@ heatsink temperature
55 (85)
1940
55 (85)
1700
13000
13610
10930
11450
845
Double side (single side) cooled
IF(RMS) Max. RMS forward current
@ 25°C heatsink temperature double side cooled
t = 10ms No voltage
IFSM
Max. peak, one-cycle forward,
non-repetitive surge current
15000
15700
12620
13210
1125
t = 8.3ms reapplied
A
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
1027
772
KA2s
796
598
t = 10ms 100% VRRM
727
546
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
11250
8450
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
1.34
1.48
0.37
1.51
1.67
0.50
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
(I > π x IF(AV)),TJ = TJ max.
r
Low level value of forward
slope resistance
1
f
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
f
0.33
1.90
0.45
2.26
(I > π x IF(AV)),TJ = TJ max.
VFM
Max. forward voltage drop
V
I = 1500A, TJ = TJ max, t = 10ms sinusoidal wave
pk p
2
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SD1053C..L Series
Bulletin I2079 rev. B 04/00
Recovery Characteristics
Testconditions
Max.values @TJ=150°C
TJ=25oC
Code
Typicalt
rr
@ 25% IRRM Square Pulse
I
di/dt
V
t
Q
I
rr
pk
r
rr
rr
@ 25% IRRM
(µs)
(A)
(A/µs)
(V)
(µs)
(µC)
(A)
S20
S30
2.0
3.0
1000
1000
100
100
- 50
- 50
4.0
4.5
400
550
180
230
Thermal and Mechanical Specifications
SD1053C..L
Parameter
Units Conditions
S20
S30
TJ
T
Max. junction operating temperature range
Max. storage temperature range
-40 to 150
°C
-40 to 150
stg
RthJ-hs Max. thermal resistance, case junction
to heatsink
0.073
0.031
DCoperation single side cooled
K/W
DCoperation double side cooled
F
Mounting force, 10%
14700
(1500)
N
(Kg)
g
wt
Approximate weight
Case style
255
DO-200AB(B-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.008
0.011
0.014
0.021
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.022
0.036
60°
30°
Ordering Information Table
Device Code
SD 105
3
C
30 S30
L
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
3 = Fast recovery
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Ratings table)
code
t
rr
L = Puk Case DO-200AB(B-PUK)
3
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SD1053C..L Series
Bulletin I2079 rev. B 04/00
Outline Table
3.5(0.14) DIA. NOM. x
BOTH ENDS
1.8(0.07) DEEP MIN.
34 (1.34) DIA. MAX.
TWO PLACES
0.8 (0.03)
BOTH ENDS
Conform to JEDEC DO-200AB (B-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
53 (2.09) DIA. MAX.
16 0
14 0
12 0
10 0
8 0
1 60
S D 105 3C ..S2 0L Se rie s
(S in g le S id e C oo le d )
S D 105 3C ..S20L S eries
(S in gle Sid e C oole d )
1 40
1 20
1 00
8 0
R
(D C ) = 0.073 K /W
R
(D C ) = 0 .07 3 K /W
thJ- hs
th J-hs
C onduction Angle
C ondu ction Period
30 °
6 0
6 0°
9 0°
6 0
180 °
60°
4 0
3 0°
120 °
9 0°
50 0
180 °
8 00
120 °
6 0 0
D C
2 0
4 0
0
2 0 0
4 00
6 0 0
10 0 0 1 20 0
0
1 0 0
2 00
3 0 0
4 00
70 0
Av era g e F o rw a rd C u rre n t (A )
A ve ra g e Fo rw a rd C u rre n t ( A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
4
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SD1053C..L Series
Bulletin I2079 rev. B 04/00
160
140
120
100
80
160
140
120
100
80
SD1053C..S30L Series
(Single Side Cooled)
SD1053C..S30L Series
(Single Side Cooled)
R
(DC) = 0.073 K/W
R
(DC) = 0.073 K/W
th J-hs
thJ-hs
C onduction Angle
C ondu ction Period
60
30°
60
60°
40
30°
60°
90°
90°
40
120°
120°
180°
20
180°
DC
0
20
0
0
0
200
400
600
800
1000
0
100
200
300
400
500
600
Average Forward Current (A)
Average Forw ard Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 6 0
1 4 0
1 2 0
1 0 0
8 0
160
SD 1053C ..S 20 L S eries
(D o ub le S id e C oo le d )
R
SD1053C..S20L Series
(Double Side Cooled)
140
120
100
80
(D C ) = 0.0 31 K /W
th J-hs
R
(DC) = 0.031 K/W
thJ-h s
C ondu ction Angle
C ondu ction P eriod
30°
6 0
3 0°
60
60°
6 0°
9 0°
90°
1 20°
120°
180 °
4 0
40
180°
2 0
20
DC
1600
0
0
0
2 0 0
40 0
60 0
8 0 0 1 0 00 1 20 0 1 4 00
400
800
1200
2000
A ve ra g e F or w a rd C u rre n t (A)
Average Forward Current (A)
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
160
140
120
100
80
160
140
120
100
80
SD1053C..S30L Series
(D ouble Side Cooled)
R
SD 1053C..S30L Series
(Double Side Cooled)
(DC) = 0.031 K/W
th J-hs
R
(DC) = 0.031 K/W
th J- hs
C onduction Angle
C ondu ction Period
30°
60°
60
60
40
20
0
90°
120°
40
180°
20
90°
120°
60°
DC
30°
400
180°
0
0
200
600
800
1000 1200
400
800
1200
1600
2000
Average Forward Current (A)
Average Forward Current (A)
Fig. 8 - Current Ratings Characteristics
Fig. 7 - Current Ratings Characteristics
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5
SD1053C..L Series
Bulletin I2079 rev. B 04/00
3 5 00
4500
4000
3500
3000
2500
2000
1500
1000
500
DC
180°
120°
90°
60°
30°
3 0 00
2 5 00
2 0 00
1 5 00
1 0 00
50 0
1 80°
1 20°
90°
60°
30°
R M S Lim it
RMS Limit
C ondu ction Period
C on duction Angle
SD1053C..S20L Series
SD 10 53C ..S 20L S eries
T
= 150°C
T
= 150° C
J
J
0
0
0
20 0
4 00
60 0
80 0 10 0 0 1 20 0 1 40 0
0
400
800
1200
1600
2000
A ve ra g e F orw a rd C u rre n t (A )
Average Forw ard Current (A)
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
3200
2800
2400
2000
1600
1200
800
4500
4000
3500
3000
2500
2000
1500
1000
500
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Limit
RMS Limit
C ond uction Period
C ond uction Angle
SD1053C..S30L Series
= 150°C
SD 1053C..S30L Series
T
400
J
T
= 150°C
J
0
0
0
200
400
600
800
1000 1200
0
400
800
1200
1600
2000
Average Forward Current (A)
Average Forw ard Current (A)
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
1 4 00 0
1 3 00 0
1 2 00 0
1 1 00 0
1 0 00 0
9 0 00
16000
14000
12000
10000
8000
At An y R a te d Lo a d C o n d itio n A n d W ith
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
R a te d
V
Ap p lie d Fo llow in g Su rg e .
RRM
In itia l T
= 15 0 °C
J
In itial T = 150 °C
J
@
@
60 H z 0.008 3
50 H z 0.010 0
s
s
No Voltage Reapplied
Rated V
Reapplied
RRM
8 0 00
7 0 00
6000
6 0 00
SD1053C..S20L Series
SD 10 53C ..S20 L S e rie s
4000
5 0 00
4 0 00
2000
1
1 0
1 0 0
0.01
0.1
Pulse Train Duration (s)
1
Numb er O f Equa l Amp litude H alf C ycle C urren t Pulses (N)
Fig. 13 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 14 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
6
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SD1053C..L Series
Bulletin I2079 rev. B 04/00
1 20 0 0
1 10 0 0
1 00 0 0
90 0 0
80 0 0
70 0 0
60 0 0
50 0 0
40 0 0
30 0 0
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
3000
A t A n y R a ted Lo a d C o n d ition A n d W ith
R a te d A p p lie d F o llo w in g Su rg e .
M a x im u m No n R ep e titive S urg e C u rre n t
V e rsu s P u lse T ra in D ura tio n .
V
RRM
In itia l T
= 150 °C
In itia l T
=
1 50 °C
J
J
@
@
6 0 H z 0.0083
5 0 H z 0.0100
s
s
No V olta g e R e a p plie d
Ra te d
V
R ea p p lied
R RM
S D 1 053C ..S 30L Se rie s
10
S D 1053C ..S 30L S eries
0.1
1
1 0 0
0.01
1
Number Of Equa l Amp litude H alf C ycle C urren t Pulses (N)
P u lse T ra in D u ra tion (s)
Fig. 15 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 16 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
10000
1 0 0 00
1 0 00
10 0
T
= 25° C
J
T
= 25°C
J
T
= 150°C
T
= 150° C
J
J
1000
SD1053C..S20L Series
SD 1 053C ..S 30L S eries
100
1
1.5
2
2.5
3
3.5
4
4.5
5
1
1.5
2
2 .5
3
3. 5
4
4.5
5
5.5
6
6 .5
Instantaneous Forward Voltage (V)
In sta n ta n eo u s F orw a rd V o lta g e (V )
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
0.1
SD 1053 C ..S 20/S30L Se rie s
Stea d y Sta te V a lu e
0.073 K /W
(Sin gle Sid e C oo le d)
0.031 K /W
0 .01
R
=
thJ-hs
R
=
thJ- hs
(D ou b le S ide C o oled )
(D C O p e ratio n )
0. 001
0 .00 1
0.0 1
0.1
1
1 0
1 00
Sq u a re W a ve P u lse D u ratio n (s)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
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7
SD1053C..L Series
Bulletin I2079 rev. B 04/00
1 0 0
16 0
12 0
8 0
4 0
0
V
V
F P
F P
T
=
J
150°C
J
I
T
=
J
15 0°C
I
J
8 0
6 0
4 0
2 0
T
= 2 5°C
T
= 25 °C
SD 1053C ..S 30L Se rie s
SD 1 053 C ..S20L S eries
0
0
4 00
8 0 0
12 0 0
16 0 0
2 00 0
0
4 0 0
8 00
12 0 0
1 6 00
20 0 0
R a te O f R ise O f F orw a r d C u rre n t - d i/d t (A/u s)
R a te O f R ise O f F orw a rd C u rren t - d i/d t (A/u s)
Fig. 20 - Typical Forward Recovery Characteristics
Fig. 21 - Typical Forward Recovery Characteristics
50 0
6 .5
6
1 0 00
I
= 1500 A
FM
SD 105 3C ..S2 0L S eries
I
= 1500 A
45 0
40 0
35 0
30 0
25 0
20 0
15 0
10 0
5 0
90 0
FM
Sine Pulse
Sin e P ulse
T
=
1 50 ° C ; V
> 1 00V
r
J
1000 A
80 0
70 0
60 0
50 0
40 0
30 0
20 0
10 0
0
5 .5
5
1000 A
500 A
500 A
I
= 1500 A
FM
S ine Pu lse
4 .5
4
1000 A
500 A
3 .5
3
S D 1053C ..S20L Se rie s
150 °C ; V 100V
SD 1053C ..S 20L Se rie s
1 50 °C ; V 100V
T
=
>
r
T
=
>
r
J
J
0
2 .5
0
50
10 0 15 0 2 00 2 5 0 3 00
1 0
10 0
10 0 0
0
50
10 0 15 0 2 0 0 25 0 30 0
Rate Of Fall O f Forward C urrent - d i/dt (A/µs)
Rate Of Fall Of Forw ard C urrent - d i/dt (A/µs)
Rate Of Fall O f Forw ard C urren t - di/dt (A/µs)
Fig. 22 - Recovery Time Characteristics
Fig. 23 - Recovery Charge Characteristics
Fig. 24 - Recovery Current Characteristics
16 00
70 0
9
S D 1053 C ..S 30L S eries
I
= 1500 A
I
= 1500 A
FM
Sine Pulse
FM
8.5
T
=
150 °C ; V
>
10 0V
14 00
12 00
10 00
8 00
6 00
4 00
2 00
0
r
J
60 0
50 0
40 0
30 0
20 0
10 0
0
Sine Pu lse
8
7.5
7
1000 A
1000 A
500 A
500 A
6.5
6
I
= 1500 A
FM
Sine Pulse
5.5
5
1000 A
500 A
4.5
4
S D 1053C ..S30L Series
1 50°C ; V 10 0V
S D 105 3C ..S30 L S eries
150 °C ; V 100V
T
=
>
r
J
T
=
>
r
J
3.5
0
50
100 150 20 0 250 3 00
0
5 0
10 0 150 200 250 300
10
10 0
10 0 0
Ra te Of Fall Of Forwa rd Current - di/d t (A/µs)
Rate O f Fall O f Forward C urrent - di/dt (A/µs)
Rate Of Fall Of Forw ard C urrent - di/dt (A/µs)
Fig. 26 - Recovery Charge Characteristics
Fig. 25 - Recovery Time Characteristics
Fig. 27 - Recovery Current Characteristics
8
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SD1053C..L Series
Bulletin I2079 rev. B 04/00
1E4
1E3
1E2
1E4
1E3
1E2
10 jou les per pu lse
6
50 Hz
200 100
400
1000
2000
3000
4
2
1
4000
0.6
0.4
6000
0.2
10000
SD1053C ..S20L Series
Sinusoid a l Pu lse
0.08
15000
20000
TC= 55°C, VRRM
dv/d t = 1000V /us
= 800V
tp
SD1053C ..S20L Series
Sinu soidal Pu lse
= 150°C , VRRM = 800V
TJ
tp
d v/d t = 1000V/µ s
1E1
1E2
1E3
1E4
1E1
1E2
Pulse Basewidth (µs)
Fig. 29 - Frequency Characteristics
1E3
1E4
Pulse Basewidth (µs)
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E4
1E3
1E2
10 joules p er p ulse
50 Hz
100
200
6
400
600
4
2
1000
1500
2000
3000
4000
1
1E3
0.8
0.6
6000
0.4
SD1053C ..S20L S eries
Trap ezoida l Pulse
10000
15000
SD1053C ..S20L Series
Trap ezoidal P ulse
TC = 55°C , VRRM
= 800V
dv/dt = 1000V /us,
di/dt = 300A/u s
TJ = 150°C, VRRM = 800V
tp
tp
dv/dt = 1000V/µs, di/dt = 300A/µs
20000
1E2
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 31 - Frequency Characteristics
1E4
1E4
1E3
1E2
10 joules per pulse
6
50 H z
100
200
400
600
4
2
1000
2000
4000
1
0.8
1E3
1E2
6000
0.6
0.4
10000
SD1053C..S20L S eries
Trap ezoid al P ulse
TC = 55°C , VRRM = 800V
d v/dt = 1000V /us
d i/dt = 100A/us
SD1053C ..S20L Series
Trap ezoida l P ulse
15000
20000
TJ = 150°C, VRRM = 800V
d v/dt = 1000V/µs, di/dt = 100A/µs
tp
tp
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basew idth (µs)
Pulse Basewidth (µs)
Fig. 33 - Frequency Characteristics
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics
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9
SD1053C..L Series
Bulletin I2079 rev. B 04/00
1E4
1E3
1E2
1E4
10 jo ules p er p ulse
6
4
200
1000
100 50 Hz
2000
400
2
1
3000
4000
0.6
0.4
6000
1E3
0.2
10000
SD 1053C ..S30L Series
Sinusoida l Pu lse
= 55°C , VRRM = 1000V
SD1053C ..S30L Series
Sinusoid al Pulse
= 1000V
dv/dt = 1000V/µs
15000
20000
TC
tp
dv/dt = 1000V/u s
TJ = 150°C , VRRM
t p
1E2
1E1
1E1
1E2
1E3
1E4
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 35 - Frequency Characteristics
1E4
1E4
1E3
1E2
10 joules per pu lse
50 H z
100
6
4
200
400
600
1000
2
1500
2000
3000
4000
6000
1E3
1
0.8
0.6
SD 1053C..S30L Se ries
Tra pezoida l P ulse
TC= 55°C , VRRM = 1000V
d v/d t = 1000V /us,
d i/d t = 300A/u s
SD1053C ..S30L Series
Tra pezoid al Pulse
10000
15000
T J = 150°C , VRRM = 1000V
dv/dt = 1000V/µ s, di/dt = 300A/µs
tp
tp
1E2
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basew idth (µs)
Pulse Basewidth (µs)
Fig. 37 - Frequency Characteristics
Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E4
1E3
1E2
10 joules p er p ulse
50 H z
100
6
4
200
400
600
2
1000
2000
1
3000
4000
0.8
1E3
0.6
6000
SD 1053C..S30L Series
Tra pezoid al Pulse
SD1053C ..S30L Series
Tra pezoid al Pulse
10000
15000
TC = 55°C , VRRM
= 1000V
TJ = 150°C, VRRM = 1000V
dv/dt = 1000V/µs, di/dt = 100A/µs
tp
d v/dt = 1000V /us,
d i/dt = 100A/us
tp
1E2
1E1
1E1
1E2
1E3
1E4
1E2
1E3
1E4
Pulse Basew idth (µs)
Pulse Basew idth (µs)
Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 39 - Frequency Characteristics
10
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相关型号：
SD1053C28S30L
Rectifier Diode, 1 Phase, 1 Element, 920A, 2800V V(RRM), Silicon, DO-200AB, ROHS COMPLIANT, CERAMIC, BPUK-2
INFINEON
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