SD150N25PBVPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 200A, 2500V V(RRM), Silicon, DO-205AC, METAL GLASS, DO-30, 1 PIN;型号: | SD150N25PBVPBF |
厂家: | Infineon |
描述: | Rectifier Diode, 1 Phase, 1 Element, 200A, 2500V V(RRM), Silicon, DO-205AC, METAL GLASS, DO-30, 1 PIN 整流二极管 |
文件: | 总8页 (文件大小:190K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I2077 rev. B 11/01
SD150N/R SERIES
Stud Version
STANDARD RECOVERY DIODES
Features
Wide current range
High voltage ratings up to 2500V
High surge current capabilities
Stud cathode and stud anode version
Standard JEDEC types
150A
Typical Applications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
Major Ratings and Characteristics
Parameters
SD150N/R
Units
400 to 2000
2500
IF(AV)
150
125
235
200
110
314
A
°C
A
@ TC
IF(RMS)
IFSM
@50Hz
@ 60Hz
@50Hz
@ 60Hz
3600
3770
4700
4920
110
A
A
I2t
65
KA2s
KA2s
V
59
101
case style
DO-205AC (DO-30)
VRRM range
TJ
400 to 2000
- 40 to 180
2500
150
°C
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1
SD150N/R Series
Bulletin I2077 rev. B 11/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
IRRM max.
Type number
peak reverse voltage
repetitive peak rev. voltage
@ T = TJ max.
V
V
J mA
04
400
500
08
12
16
800
1200
1600
900
1300
1700
SD150N/R
15
20
25
2000
2500
2100
2600
Forward Conduction
Parameter
SD150N/R
Units Conditions
IF(AV) Max. average forward current
@ Case temperature
150
125
200
110
235
A
°C
A
°C
A
180° conduction, half sine wave
180° conduction, half sine wave
DC @ 113°C case temperature
IF(AV) Max. average forward current
@ Case temperature
IF(RMS) Max. RMS forward current
IFSM
Max. peak, one-cycle forward,
non-repetitive surge current
3600
3770
3000
3170
65
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
59
KA2s
46
42
I2√t
Maximum I2√t for fusing
650
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
0.93
1.06
1.27
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
(I > π x IF(AV)),TJ = TJ max.
r 1
f
Low level value of forward
slope resistance
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
r 2
f
High level value of forward
slope resistance
1.04
1.5
(I > π x IF(AV)),TJ = TJ max.
VFM
Max. forward voltage drop
V
I
= 470A, TJ = TJ max, t = 10ms sinusoidal wave
p
pk
2
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SD150N/R Series
Bulletin I2077 rev. B 11/01
Thermal and Mechanical Specifications
SD150N/R
Parameter
Units
°C
Conditions
400to2000
-40 to 180
-55 to 200
2500
TJ
Max. junction operating temperature range
Max. storage temperature range
150
T
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance,
case to heatsink
0.23
0.08
K/W
DC operation
Mounting surface, smooth, flat and
greased
T
Max. allowed mounting torque ±10%
14
120
Nm
g
Not lubricated threads
wt
Approximate weight
Case style
DO-205AC(DO-30)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.041
0.049
0.063
0.093
0.156
0.030
0.051
0.068
0.096
0.157
K/W
60°
30°
OrderingInformationTable
Device Code
SD 15
0
N
25
P
B
C
3
4
5
6
1
2
7
8
1
2
3
4
-
-
-
-
Diode
Essential part number
0 = Standardrecovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
-
-
Voltage code: Code x 100 = VRRM (See Voltage Ratings table)
P = StudbaseDO-205AC(DO-30)1/2"20UNF-2A
M = StudbaseDO-205AC(DO-30)M12X1.75
B = Flag top terminal (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
6
7
8
-
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Non isolated lead
-
C = CeramicHousing(over1600V)
V = Glass-metal seal (only up to 1600V)
3
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SD150N/R Series
Bulletin I2077 rev. B 11/01
Outline Table
CERAMIC HOUSING
16.5 (0.65)
MAX.
2.6 (0.10) MAX.
DIA. 8.5 (0.33) NOM.
2
C.S. 16mm
(0.015 s.i.)
DIA. 22.5 (0.88) MAX.
SW 27
Conforms to JEDEC DO-205AC (DO-30)
All dimensions in millimeters (inches)
1/2"-20UNF-2A*
* FOR METRIC DEVICE: M12 X 1.75
GLASS-METAL SEAL
16.5 (0.65)
MAX.
2.6 (0.10) MAX
DIA. 8.5 (0.33) NOM.
2
C.S. 16mm
(0.015 s.i.)
DIA. 23.5 (0.93) MAX.
SW 27
1/2"-20UNF-2A*
* FOR METRIC DEVICE: M12 X 1.75
4
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SD150N/R Series
Bulletin I2077 rev. B 11/01
Outline Table
CERAMIC HOUSING
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
DIA. 22.5 (0.88) MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75
DO-205AC (DO-30) Flag
All dimensions in millimeters (inches)
GLASS-METAL SEAL
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
DIA. 23.5 (0.93) MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75
5
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SD150N/R Series
Bulletin I2077 rev. B 11/01
180
180
170
160
150
140
130
120
110
SD 150N/R Series
SD 150N/R Series
R (DC) = 0.23 K/W
thJC
R
(DC) = 0.23 K/W
thJC
170
160
150
140
130
120
Conduction Angle
Conduction Period
30
60
60
90
120
90
180
60
120
30
180
160
DC
200
0
20
40
80 100 120 140 160
0
40
80
120
240
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
220
R
0
t
200
.
h
4
S
K
A
/
180
120
W
=
0
180
.
0
8
K
90
60
30
160
140
120
100
80
/
W
RMS Lim it
-
D
e
l
t
a
R
1
K
8
/
W
1
.
K
/
W
Conduction Angle
SD 150N/R Series
60
40
T
= 180 C
J
20
0
0
20
40
60
80 100 120 140
1
6
0
40
60
80 100 120 140 160 180
Average Forw ard Current (A)
Maxim um Allowable Am bient Tem perature ( C)
Fig. 3 - Forward Power Loss Characteristics
300
250
200
150
100
50
DC
180
120
90
60
30
t
h
S
0
A
.
3
K
/
W
0
.
4
K
/
W
0.
0
6
K
/
W
.
8
K
/
W
RMS Lim it
Conduction Period
SD150N/R Series
1
.
4
K
/
W
T
= 180
C
J
0
0
50
100
150
200
250 40
60
80 100 120 140 160 180
Average Forw ard Current (A)
Maximum Allow able Am bient Temperature ( C)
Fig. 4 - Forward Power Loss Characteristics
6
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SD150N/R Series
Bulletin I2077 rev. B 11/01
3500
3000
2500
2000
1500
1000
4000
3500
3000
2500
2000
1500
1000
500
At Any Rated Load Condition And W ith
Rated V Applied Follow ing Surge.
Maxim um Non Repetitive Surge Current
Versus Pulse Train Duration.
RRM
Initial T = 180
C
J
Initial T = 180 C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V Reapplied
RRM
SD 150N/R Series
SD150N/R Series
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Num ber O f Equa l Am plitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
SD150N/R Series
1000
T
T
= 25 C
J
= 180
C
J
100
1
1.5
2
2.5
3
3.5
Instantaneous Forw ard Voltage (V )
Fig. 7 - Forward Voltage Drop Characteristics
1
Steady State Value:
= 0.23 K/W
R
thJC
(DC Operation)
0.1
SD150N/R Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
7
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SD150N/R Series
Bulletin I2077 rev. B 11/01
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/01
8
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