SD2000C [INFINEON]
STANDARD RECOVERY DIODES Hockey Puk Version; 标准恢复二极管曲棍球北辰版本
| 型号： | SD2000C |
| 厂家： | 
Infineon |
| 描述： | STANDARD RECOVERY DIODES Hockey Puk Version |
| 文件： | 总6页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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8/A
SD2000C..L SERIES
Hockey Puk Version
STANDARD RECOVERY DIODES
Features
2100A
Wide current range
High voltage ratings up to 1000V
High surge current capabilities
Diffused junction
Hockey Puk version
Case style DO-200AB (B-PUK)
Typical Applications
Converters
Power supplies
High power drives
case style DO-200AB (B-PUK)
Auxiliary system supplies for traction applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD2000C..L
Units
2100
55
A
°C
A
@ T
hs
hs
IF(RMS)
IFSM
I2t
3900
@ T
25
°C
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
23900
25000
2857
A
KA2s
KA2s
V
2608
VRRM range
TJ
400 to 1000
- 40 to 180
°C
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
IRRM max.
Type number
SD2000C..L
peak reverse voltage
V
repetitive peak rev. voltage
V
@ TJ = 180°C
mA
04
08
10
400
800
500
900
60
1000
1100
Forward Conduction
Parameter
SD2000C..L
Units
Conditions
IF(AV) Max. average forward current
@ Heatsink temperature
2100 (1040)
55 (85)
A
180° conduction, half sine wave
Double side (single side) cooled
°C
IF(RMS) Max. RMS forward current
3900
23900
25000
20100
A
@ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
IFSM
Max. peak, one-cycle forward,
non-repetitive surge current
A
21000
2857
2608
2020
Sinusoidal halfwave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
KA2s
1844
I2√t
Maximum I2√t for fusing
28570
KA2√s
t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
0.74
0.86
0.13
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
(I > π x IF(AV)),TJ = TJ max.
r
Low level value of forward
slope resistance
1
f
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(I > π x IF(AV)),TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
f
0.12
1.55
VFM
Max. forward voltage drop
V
I = 6000A, TJ = TJ max, t = 10ms sinusoidal wave
pk p
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ries
Fig. 3 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 4 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
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Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
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ies
Thermal and Mechanical Specifications
Parameter
SD2000C..L
-40 to 180
-55 to 200
Units
°C
Conditions
TJ
T
Max. junction operating temperature range
Max. storage temperature range
stg
RthJ-hs Max. thermal resistance, junction
to heatsink
0.073
0.031
14700
(1500)
255
DC operation single side cooled
DC operation double side cooled
K/W
F
Mounting force, ± 10%
N
(Kg)
g
wt
Approximate weight
Case style
DO-200AB(B-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units Conditions
Single Side Double Side Single Side Double Side
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.020
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
SD 200
0
C
10
L
3
1
2
4
5
6
1
2
3
4
5
6
-
-
-
-
-
-
Diode
Essential part number
0 = Standard recovery
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (see Voltage Ratings Table)
L = Puk Case DO-200AB (B-PUK)
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Outline Table
3.5(0.14) DIA. NOM. x
1.8(0.07) DEEP MIN.
BOTH ENDS
Case Style DO-200AB (B-PUK)
All dimensions in millimeters (inches)
34 (1.34) DIA. MAX.
TWO PLACES
0.8 (0.03)
BOTH ENDS
53 (2.09) DIA. MAX.
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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相关型号：
SD2000C04LPBF
Rectifier Diode, 1 Phase, 1 Element, 2100A, 400V V(RRM), Silicon, DO-200AB, CERAMIC, BPUK-2
INFINEON
SD2000C08LPBF
Rectifier Diode, 1 Phase, 1 Element, 2100A, 800V V(RRM), Silicon, DO-200AB, CERAMIC, BPUK-2
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