SD200R24MSC [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 200A, 2400V V(RRM), Silicon, DO-205AC, CERAMIC, DO-30, 1 PIN;
| 型号： | SD200R24MSC |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 200A, 2400V V(RRM), Silicon, DO-205AC, CERAMIC, DO-30, 1 PIN |
| 文件： | 总8页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2080 rev. B 11/01
SD200N/R SERIES
Stud Version
STANDARD RECOVERY DIODES
Features
Wide current range
200A
High voltage ratings up to 2400V
High surge current capabilities
Stud cathode and stud anode version
Standard JEDEC types
Typical Applications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
Major Ratings and Characteristics
Parameters
SD200N/R
Units
400 to 2000
2400
IF(AV)
200
110
314
200
110
314
A
°C
A
@ TC
IF(RMS)
IFSM
@50Hz
@ 60Hz
@50Hz
@ 60Hz
4700
4920
4700
4920
110
A
A
I2t
110
KA2s
KA2s
V
101
101
case style
DO-205AC (DO-30)
VRRM range
TJ
400 to 2000
- 40 to 180
2400
150
°C
www.irf.com
1
SD200N/R Series
Bulletin I2080 rev. B 11/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
peak reverse voltage
VRSM , maximum non-
repetitive peak rev. voltage
IRRM max.
Type number
SD200N/R
@ T = TJ max.
V
400
800
1200
1600
2000
2400
V
500
900
1300
1700
2100
2500
J mA
04
08
12
16
20
24
15
Forward Conduction
Parameter
SD200N/R
Units Conditions
IF(AV) Max. average forward current
@ Case temperature
IF(AV) Max. average forward current
@ Case temperature
200
110
220
100
314
A
°C
A
°C
A
180° conduction, half sine wave
180° conduction, half sine wave
DC @ 95°C case temperature
IF(RMS) Max. RMS forward current
IFSM
Max. peak, one-cycle forward,
4700
4920
3950
4140
110
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
101
KA2s
78
71
I2√t
Maximum I2√t for fusing
1100
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
0.90
1.00
0.79
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
(I > π x IF(AV)),TJ = TJ max.
r
Low level value of forward
slope resistance
1
f
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
f
0.64
1.40
(I > π x IF(AV)),TJ = TJ max.
VFM
Max. forward voltage drop
V
I
= 630A, TJ = TJ max, t = 10ms sinusoidal wave
p
pk
2
www.irf.com
SD200N/R Series
Bulletin I2080 rev. B 11/01
ThermalandMechanicalSpecifications
SD200N/R
Parameter
Units
°C
Conditions
400to2000
-40 to 180
-55 to 200
2400
TJ
Max. junction operating temperature range
Max. storage temperature range
150
T
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance,
case to heatsink
0.23
0.08
K/W
DC operation
Mounting surface, smooth, flat and
greased
T
Max. allowed mounting torque ±10%
14
120
Nm
g
Not lubricated threads
wt
Approximate weight
Case style
DO-205AC(DO-30)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.041
0.049
0.063
0.093
0.156
0.030
0.051
0.068
0.096
0.157
K/W
60°
30°
Ordering Information Table
Device Code
SD 20
0
N
24
P
B
C
3
4
5
6
1
2
7
8
1
2
3
4
-
-
-
-
Diode
Essential part number
0 = Standard recovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
6
-
-
Voltage code: Code x 100 = VRRM (See Voltage Ratings table)
P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A
M = Stud base DO-205AC (DO-30) M12 X 1.75
B = Flag top terminal (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
7
-
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Non isolated lead
8
-
C = Ceramic Housing (over 1600V)
V = Glass-metal seal (only up to 1600V)
3
www.irf.com
SD200N/R Series
Bulletin I2080 rev. B 11/01
Outline Table
CERAMIC HOUSING
16.5 (0.65)
MAX.
2.6 (0.10) MAX.
DIA. 8.5 (0.33) NOM.
2
C.S. 16mm
(0.015 s.i.)
DIA. 22.5 (0.88) MAX.
SW 27
Conforms to JEDEC DO-205AC (DO-30)
All dimensions in millimeters (inches)
1/2"-20UNF-2A*
* FOR METRIC DEVICE: M12 X 1.75
GLASS-METAL SEAL
16.5 (0.65)
MAX.
2.6 (0.10) MAX
DIA. 8.5 (0.33) NOM.
2
C.S. 16mm
(0.015 s.i.)
DIA. 23.5 (0.93) MAX.
SW 27
1/2"-20UNF-2A*
* FOR METRIC DEVICE: M12 X 1.75
4
www.irf.com
SD200N/R Series
Bulletin I2080 rev. B 11/01
Outline Table
CERAMIC HOUSING
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
DIA. 22.5 (0.88) MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75
DO-205AC (DO-30) Flag
All dimensions in millimeters (inches)
GLASS-METAL SEAL
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
DIA. 23.5 (0.93) MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75
5
www.irf.com
SD200N/R Series
Bulletin I2080 rev. B 11/01
180
180
170
160
150
140
130
120
110
100
90
SD200N/R Series
R (DC) = 0.23 K/W
thJC
SD200N/R Series
R
(D C) = 0.23 K/W
170
160
150
140
130
120
110
100
thJC
Conduction Angle
Conduction Period
90
60
90
120
60
120
30
180
DC
30
180
0
50
100 150 200 250 300 350
0
40
80
120
160
200
240
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
300
0
t
180
hS
.
0
1
.
2
2
K
/
A
0
K
.
/
W
120
3
W
K
250
90
/
W
60
30
200
150
100
50
0
0
.
.
6
8
K
K
/
/
RMS Lim it
W
W
Conduction Angle
SD200N/R Series
1
.
8
K
/
W
T
= 180
C
J
0
0
50
100
150
200
2
5
0
40
60
80 100 120 140 160 180
Average Forw ard Current (A)
Maxim um Allow able Am bient Tem perature ( C)
Fig. 3 - Forward Power Loss Characteristics
400
350
300
250
200
150
100
50
R
DC
180
120
90
60
30
=
0
.
0
1
.
2
0
8
K
/
K
W
/
W
-
D
e
l
t
a
R
0
.
4
K
/
W
RMS Lim it
Conduction Period
SD200N/R Series
1
.
4
K
K
/
W
W
T
= 180 C
J
1
.
8
/
0
0
50
100 150 200 250 300
3
5
0
40
60
80 100 120 140 160 180
Average Forward Current (A)
Maxim um Allow able Am bient Tem perature ( C)
Fig. 4 - Forward Power Loss Characteristics
6
www.irf.com
SD200N/R Series
Bulletin I2080 rev. B 11/01
450 0
400 0
350 0
300 0
250 0
200 0
150 0
100 0
5000
4500
4000
3500
3000
2500
2000
1500
1000
At Any Rated Load Condition And W ith
Rated V Applied Following Surge.
Maxim um Non Repetitive Surge Current
Versus Pulse Train D uration.
RRM
Initial T = 180
C
Initial T = 180
C
J
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V Reapplied
RRM
SD200N/R Series
SD200N/R Series
1
10
10 0
0.01
0.1
Pulse Train Duration (s)
1
Num ber O f Equal Am plitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
SD200N/R Series
100 0
T
T
= 25 C
J
J
= 180
C
100
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forw ard Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Steady State Value:
= 0.23 K/W
R
thJC
(DC Operation)
0.1
SD200N/R Series
0.01
0.001
0.01
0.1
1
10
Square W ave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
www.irf.com
7
SD200N/R Series
Bulletin I2080 rev. B 11/01
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/01
8
www.irf.com
相关型号：
SD200R24PBV
Rectifier Diode, 1 Phase, 1 Element, 200A, 2400V V(RRM), Silicon, DO-205AC, METAL GLASS, DO-30, 1 PIN
INFINEON
SD200R24PBVPBF
Rectifier Diode, 1 Phase, 1 Element, 200A, 2400V V(RRM), Silicon, DO-205AC, METAL GLASS, DO-30, 1 PIN
INFINEON
SD200R24PC
Rectifier Diode, 1 Phase, 1 Element, 220A, 2400V V(RRM), Silicon, DO-205AC, ROHS COMPLIANT, CERAMIC, DO-30, 1 PIN
VISHAY
SD200R24PSC
Rectifier Diode, 1 Phase, 1 Element, 200A, 2400V V(RRM), Silicon, DO-205AC, CERAMIC, DO-30, 1 PIN
INFINEON
SD200R24PSV
Rectifier Diode, 1 Phase, 1 Element, 200A, 2400V V(RRM), Silicon, DO-205AC, METAL GLASS, DO-30, 1 PIN
INFINEON
SD200R24PSVPBF
Rectifier Diode, 1 Phase, 1 Element, 200A, 2400V V(RRM), Silicon, DO-205AC, METAL GLASS, DO-30, 1 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明