SD233R [INFINEON]
FAST RECOVERY DIODES Stud Version; 快恢复二极管梭哈版本
| 型号： | SD233R |
| 厂家： | 
Infineon |
| 描述： | FAST RECOVERY DIODES Stud Version |
| 文件： | 总8页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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4/A
SD233N/R SERIES
FAST RECOVERY DIODES
Stud Version
Features
High power FAST recovery diode series
4.5 µs recovery time
235A
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD233N/R
Units
235
60
A
°C
A
@ TC
IF(RMS)
IFSM
370
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5500
A
5760
A
I2t
151
KA2s
KA2s
V
138
VRRM range
3000 to 4500
4.5
t
µs
°C
°C
rr
@ TJ
125
case style
B-8
TJ
-40 to 125
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SD
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VRRM max. repetitive
VRSM , maximum non-
IRRM max.
Type number
SD233N/R
Code peak and off-state voltage
V
repetitive peak voltage
TJ = 125°C
mA
V
30
36
40
45
3000
3600
4000
4500
3100
3700
4100
4600
50
Forward Conduction
Parameter
SD233N/R Units Conditions
12
IF(AV) Max. average forward current
@ Case temperature
235
60
A
180° conduction, half sine wave.
°C
IF(RMS) Max. RMS current
370
A
@ 45°C case temperature
IFSM
Max. peak, one-cycle
5500
5760
4630
4840
t = 10ms
t = 8.3ms reapplied
t = 10ms 50% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive forward current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
151
138
107
98
t = 10ms
t = 8.3ms reapplied
t = 10ms 50% VRRM
t = 8.3ms reapplied
No voltage
KA2s
I2√t
Maximum I2√t for fusing
1510
1.56
1.68
1.64
1.53
3.2
KA2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level of threshold voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
V
VF(TO)2 High level of threshold voltage
(I > π x IF(AV)), TJ = TJ max.
rf1
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
rf2
(I > π x IF(AV)), TJ = TJ max.
VFM
V
I = 1000A, T = 125°C, t = 400 µs square pulse
pk p
J
2222222222222
Recovery Characteristics
Testconditions
Max.values @TJ=125°C
TJ = 25oC
Code
typical t
rr
I
di/dt (*)
V
t
Q
I
pk
r
rr
rr
rr
@ 25% IRRM Square Pulse
@ 25% IRRM
(µs)
(A)
(A/µs) (V)
(µs)
(µC)
(A)
S50
5.0
1000
100
- 50
4.5
680
240
(*) di/dt = 25A/us @ TJ = 25°C
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
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Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
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SD
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 9 - Typical Forward Recovery Characteristics
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Fig. 10 - Recovery Time Characteristics
Fig. 11 - Recovery Charge Characteristics
Fig. 12 - Recovery Current Characteristics
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Fig. 14 - Frequency Characteristics
Fig. 16 - Frequency Characteristics
Fig. 18 - Frequency Characteristics
Fig. 13 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
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Thermal and Mechanical Specification
Parameter
SD233N/R Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
°C
-40 to 150
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
0.1
0.04
50
DC operation
K/W
Mounting surface, smooth, flat and greased
Not lubricated threads
Nm
g
T
Mounting torque ± 10%
Approximate weight
Case style
wt
454
B-8
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.010
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
K/W
60°
23
30°
Ordering Information Table
Device Code
SD 23
3
N
45 S50
P
S
C
7
8
9
1
2
5
6
3
4
1
2
3
4
-
-
-
-
Diode
Essential part number
3 = Fast recovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
6
7
-
-
-
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
t code (see Recovery Characteristics table)
rr
P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
8
-7 S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
T = Threaded Top Terminal 3/8" 24UNF-2A
None = Not isolated lead
9
-
C = Ceramic housing
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SD
Outlines Table
CERAMIC HOUSING
26 (1.023) MAX.
5(0.20) ± 0.3(0.01)
10.5 (0.41) DIA.
12 (0.47) MIN.
Case Style B-8
All dimensions in millimeters (inches)
2
C.S. 70mm
38 (1.5)
DIA. MAX.
12
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.
17 (0.67) DIA.
3/8"-24UNF-2A
CERAMIC HOUSING
38 (1.5)
DIA. MAX2. 222222222222
Case Style B-8 with top thread terminal 3/8"
All dimensions in millimeters (inches)
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.
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