SD403C04S10C [INFINEON]
FAST RECOVERY DIODES; 快恢复二极管
| 型号： | SD403C04S10C |
| 厂家： | 
Infineon |
| 描述： | FAST RECOVERY DIODES |
| 文件： | 总7页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2067 rev. C 04/00
SD403C..C SERIES
Hockey Puk Version
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
1.0 to 1.5 µs recovery time
430A
High voltage ratings up to 1600V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AA
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
case style DO-200AA
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD403C..C
Units
430
55
A
°C
A
@ T
hs
hs
IF(RMS)
675
@ T
25
°C
A
IFSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
6180
6470
A
I2t
191
KA2s
KA2s
V
175
VRRM range
400 to 1600
1.0 to 1.5
25
t
range
µs
°C
°C
rr
@ TJ
TJ
- 40 to 125
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1
SD403C..C Series
Bulletin I2067 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VRRM max. repetitive
VRSM , maximum non-
IRRM max.
TJ = 125°C
mA
Type number
SD403C..S10C
Code peak and off-state voltage
repetitive peak voltage
V
V
04
08
10
12
14
16
400
500
800
1000
1200
1400
1600
900
1100
1300
1500
1700
35
SD403C..S15C
Forward Conduction
Parameter
SD403C..C Units Conditions
IF(AV) Max. average forward current
@ Heatsink temperature
430(210)
55(75)
675
A
°C
A
180° conduction, half sine wave.
Double side (single side) cooled
IF(RMS) Max. RMS current
@ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
IFSM Max. peak, one-cycle
non-repetitive forward current
6180
6470
5200
5445
191
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
175
KA2s
135
123
1910
1.00
1.20
0.56
0.70
1.83
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level of threshold voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
V
VF(TO)2 High level of threshold voltage
(I > π x IF(AV)), TJ = TJ max.
rf1
rf2
VFM
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
(I > π x IF(AV)), TJ = TJ max.
V
I = 1350A, TJ = 25°C, t = 10ms sinusoidal wave
pk p
Recovery Characteristics
Testconditions
Max.values @TJ=125°C
TJ=25oC
Code
typical t
I
di/dt
V
t
Q
I
rr
rr
pk
r
rr
rr
@ 25% IRRM Square Pulse
@ 25% IRRM
(µs)
1.0
1.5
(A)
(A/µs) (V)
(µs)
(µC)
52
(A)
33
S10
S15
2.4
2.9
750
25
- 30
90
44
2
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SD403C..C Series
Bulletin I2067 rev. C 04/00
Thermal and Mechanical Specifications
Parameter
SD403C..C
Units Conditions
TJ
T
Max. operating temperaturerange
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.16
0.08
DC operationsinglesidecooled
DC operationdouble side cooled
K/W
F
Mounting force, 10%
4900
(500)
70
N
(Kg)
g
wt
Approximate weight
Case style
DO-200AA
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units Conditions
Single Side Double Side Single Side Double Side
180°
120°
90°
0.010
0.012
0.016
0.024
0.042
0.011
0.013
0.016
0.024
0.042
0.008
0.013
0.018
0.025
0.042
0.008
0.013
0.018
0.025
0.042
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
SD 40
3
C
16 S15
C
1
2
5
7
3
4
6
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
3 = Fast recovery
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
code (see Recovery Characteristics table)
t
rr
C = Puk Case DO-200AA
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3
SD403C..C Series
Bulletin I2067 rev. C 04/00
Outline Table
3.5(0.14) 0.1(0.004) DIA. NOM.x
1.8 (0.07) DEEP MIN. BOTH ENDS
0.3 (0.01) MIN.
BOTH ENDS
19(0.75) DIA. MAX.
TWO PLACES
Case Style DO-200AA
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
38 (1.50) DIA. MAX.
1 3 0
1 3 0
1 2 0
1 1 0
1 0 0
90
S D 403C ..C S eries
(S in g le Sid e C oo le d )
S D 403C ..C Se rie s
(S in gle Sid e C oo led )
1 2 0
1 1 0
1 0 0
9 0
R
(D C ) = 0.16 K /W
R
(D C ) = 0.16 K /W
thJ- hs
thJ-h s
C ondu ction Period
C onduction An gle
80
70
60
50
30 °
60°
9 0°
1 80°
8 0
60°
30°
90°
1 20°
D C
30 0
1 20°
2 00
180 °
7 0
0
50
1 0 0
1 50
2 50
0
5 0
1 0 0
1 5 0
20 0
2 50
35 0
A ve ra g e F orw a r d C u rre n t (A )
Ave ra g e F or w a rd C u rr en t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
4
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SD403C..C Series
Bulletin I2067 rev. C 04/00
130
120
110
100
90
1 3 0
1 2 0
1 1 0
1 0 0
9 0
SD 4 03C ..C Se rie s
(D ou b le Sid e C o ole d )
SD403C..C Series
(Double Side Cooled)
R
(D C ) = 0.08 K /W
R
(DC) = 0.08 K/W
thJ-h s
th J-hs
C ondu ction Period
C ond uction Angle
8 0
80
7 0
30°
60°
70
90°
6 0
120°
90°
180°
60
5 0
60°
1 20°
30 °
2 00
180°
D C
50
4 0
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
0
1 0 0
30 0
4 00
5 00
6 0 0
7 00
A vera g e F orw a r d C u rre n t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
800
700
600
500
400
300
200
100
0
1 10 0
1 00 0
90 0
80 0
70 0
60 0
50 0
40 0
30 0
20 0
10 0
0
D C
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Limit
RM S Lim it
C ondu ction Period
SD 40 3C ..C S er ies
C ondu ction Angle
SD403C..C Series
T
=
125° C
T
= 125°C
J
J
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
0
1 00
20 0
3 00
4 0 0
5 00
60 0
7 00
A ve ra g e F o rw a rd C u rre n t (A )
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
6 00 0
5 50 0
5 00 0
4 50 0
4 00 0
3 50 0
3 00 0
2 50 0
2 00 0
7000
6000
5000
4000
3000
2000
1000
A t A n y R a te d Lo a d C on d itio n A n d W ith
Maximum Non Repetitive Surge Current
Versus Pulse Train D uration.
R a te d
V
A p p lied Fo llo w in g S u rg e.
RR M
In itia l T
= 125° C
J
Initial T = 125°C
J
@
@
60 H z 0.0 083
50 H z 0.0 100
s
s
No Voltage Reapplied
Rated V
Reapplied
RR M
S D 403 C ..C S eries
SD 403C..C Series
0.01
0.1
Pulse Train Duration (s)
1
1
1 0
1 00
Num ber Of Equ al Amplitud e Ha lf Cycle C urrent Pulses (N)
Fig. 7 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 8 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
5
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SD403C..C Series
Bulletin I2067 rev. C 04/00
1
10000
T
=
25 °C
J
SD 403 C ..C S eries
T
= 125 °C
J
0 .1
1000
100
10
S te a d y Sta te V a lu e
0.16 K /W
(S in g le Sid e C oo le d )
0.08 K /W
R
=
thJ-hs
0. 01
0 .0 01
SD403C ..C Ser ie s
R
=
thJ- hs
(D o ub le S id e C o ole d )
(D C O p e ra tio n )
0 .0 01
0 .01
0 .1
1
10
10 0
0
1
2
3
4
5
6
7
S q u a re W a ve P u lse D u ra tion (s)
In stan ta n eo us Forw ar d V o lta ge (V )
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
2.8
2.6
2.4
2.2
14 0
90
SD 4 03C ..S10C Se ries
I
= 750 A
13 0
FM
I
= 750 A
FM
Squa re Pulse
T
=
1 25 ° C ; V
= 30 V
r
80
J
Squa re Pu lse
12 0
11 0
10 0
9 0
400 A
200 A
70
60
50
I
= 750 A
FM
400 A
Squa re Pulse
8 0
200 A
7 0
6 0
400 A
200 A
40
30
2
1.8
1.6
5 0
4 0
SD 40 3C ..S10 C Se rie s
SD403C..S10C Series
3 0
20
10
T
=
125 ° C ;
V
= 3 0V
T
= 125 °C; V = 30V
J
r
r
J
2 0
1 0
10
100
0
20
40
6 0
80
100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forw ard Current - d i/dt (A/µs)
R ate Of Fa ll Of Forw ard C urrent - di/dt (A/µs)
Rate Of Fall Of Forw ard C urrent - di/dt (A/µs)
Fig. 11 - Recovery Time Characteristics
Fig. 12 - Recovery Charge Characteristics
Fig. 13 - Recovery Current Characteristics
3.5
170
130
I
= 750 A
FM
S D 403C ..S1 5C S erie s
I
=
750 A
160
150
140
130
120
110
100
90
120
110
100
90
FM
Sq uare Pulse
T
=
125 °C ; V
= 30V
r
J
Squ are Pu lse
3
2.5
2
I
=
750 A
FM
400 A
Sq uare Pulse
400 A
200 A
80
70
200 A
60
400 A
200 A
50
80
40
70
30
SD 4 03C ..S15 C S erie s
SD 40 3C ..S15C Se rie s
T
=
12 5 °C ; V
= 30V
J
r
60
T
=
12 5 ° C ; V
=
30V
20
r
J
1.5
50
10
0
2 0
40
60
8 0
10 0
1 0
10 0
1 0 20 3 0 40 5 0 60 70 80 9 0 10 0
Rate Of Fall Of Forw ard C urrent - d i/dt (A/µs)
Rate Of Fall Of Forw ard C urren t - di/d t (A/µs)
R ate O f Fa ll Of Forw ard C urrent - di/dt (A/µs)
Fig. 16 - Recovery Current Characteristics
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Fig. 14 - Recovery Time Characteristics
Fig. 15 - Recovery Charge Characteristics
6
SD403C..C Series
Bulletin I2067 rev. C 04/00
1E 4
1E 3
1E 2
1E 1
20 jou les p er p ulse
10
20 joules p er pulse
4
10
2
4
1
2
1
0.4
0.2
0.1
0.04
0.02
0.01
0.4
0.2
0.1
0.04
SD403C..S10C Series
SD403C ..S10C S eries
Sinu soidal Pulse
Trapezoidal Pulse
TJ = 1 25°C, VRRM = 800V
d v/dt = 1000V/µs ; d i/dt= 50A/µs
T J = 125°C , VRRM = 800V
tp
tp
d v/d t = 10 00V /µs
1E4
1E1
1E 1
1 E2
1E3
1 E2
1E3
1E4
P u lse B a se w id th (µ s)
P ulse B a sew id th (µ s)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
1E1
20 joules per pu lse
10
20 joules per pulse
4
2
10
4
1
2
1
0.4
0.2
0.4
0.2
0.1
0.04
0.02
0.1
SD403C..S15C Series
Trapezoid al Puls e
SD403. .S15C Series
Sinu soidal Pu ls e
T J = 125°C , VRRM = 1120V
dv/d t = 1000V/µ s
TJ
= 125°C, VRRM = 11 20V
tp
tp
d v/dt = 1000V/µs ; di/dt= 50A/µ s
1E4 1E1
1 E 2
1 E 3
1 E4
1E1
1 E2
1 E3
Pu lse Ba se w id th (µ s)
P u lse Ba sew id th (µ s)
Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics
7
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相关型号：
SD403C08S10CPBF
Rectifier Diode, 1 Phase, 1 Element, 430A, 800V V(RRM), Silicon, DO-200AA, PUK-2
INFINEON
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