SD453R12S20PSCPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 400A, 1200V V(RRM), Silicon, CERAMIC, B-8, 1 PIN;型号: | SD453R12S20PSCPBF |
厂家: | Infineon |
描述: | Rectifier Diode, 1 Phase, 1 Element, 400A, 1200V V(RRM), Silicon, CERAMIC, B-8, 1 PIN |
文件: | 总10页 (文件大小:182K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I2076 rev. A 09/94
SD453N/R SERIES
FAST RECOVERY DIODES
Stud Version
Features
400A
450A
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 150°C
TypicalApplications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
SD453N/R
Parameters
IF(AV)
Units
S20
400
S30
450
A
°C
A
@ TC
70
70
IF(RMS)
IFSM
630
710
@ 50Hz
@ 60Hz
9300
9730
9600
10050
A
A
VRRM range
1200 to 2500 1200 to 2500
V
t
2.0
25
3.0
25
µs
°C
°C
rr
@ TJ
case style
B-8
TJ
- 40 to 150
1
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SD453N/R Series
Bulletin I2076 rev. A 09/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
IRRM max.
Type number
SD453N/R
peak reverse voltage
V
repetitive peak rev. voltage
V
@ TJ = TJ max.
mA
12
16
20
25
1200
1600
2000
2500
1300
1700
2100
2600
50
Forward Conduction
SD453N/R
Parameter
Units Conditions
S20
400
70
S30
450
70
IF(AV) Max. average forward current
@ case temperature
A
°C
A
180° conduction, half sine wave
IF(RMS) Max. RMS forward current
630
710
@ case temperature
55
52
9600
10050
8070
8450
460
°C
IFSM
Max. peak, one-cycle forward,
non-repetitive surge current
9300
9730
7820
8190
432
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
A
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
395
420
KA2s
306
326
t = 10ms 100% VRRM
279
297
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
4320
4600
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
1.00
1.09
0.95
1.04
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
(I > π x IF(AV)),TJ = TJ max.
r
Low level value of forward
slope resistance
1
f
mΩ
0.80
0.60
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(I > π x IF(AV)),TJ = TJ max.
r
High level value of forward
slope resistance
2
f
0.74
2.20
0.54
1.85
VFM
Max. forward voltage drop
V
I = 1500A, TJ = TJ max, t = 10ms sinusoidal wave
pk p
Recovery Characteristics
Testconditions
Max.values @TJ=150°C
TJ=25 oC
Code
typical t
I
di/dt
pk
V
t
Q
I
rr
rr
r
rr
rr
@ 25% IRRM Square Pulse
@ 25% IRRM
(µs)
2.0
3.0
(A)
(A/µs)
50
(V)
- 50
- 50
(µs)
(µC)
250
380
(A)
S20
S30
1000
1000
3.5
5.0
120
150
50
2
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SD453N/R Series
Bulletin I2076 rev. A 09/94
Thermal and Mechanical Specifications
SD453N/R
S20 S30
Parameter
Units Conditions
TJ
T
Max. junction operating temperature range
Max. storage temperature range
-40 to 150
°C
-40 to 150
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case
to heatsink
0.1
DC operation
K/W
Mounting surface, smooth, flat and
greased
0.04
T
Mounting torque, ± 10%
Approximate weight
Case style
50
Nm
g
Not lubricated threads
wt
454
B-8
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units Conditions
TJ = TJ max.
S20
S30
S20
S30
180°
120°
90°
0.010
0.010
0.008
0.008
0.014
0.017
0.025
0.042
0.014
0.017
0.025
0.042
0.014
0.019
0.026
0.042
0.014
0.019
0.026
0.042
K/W
60°
30°
Ordering Information Table
Device Code
SD 45
3
N
25 S30
P
S
C
3
6
1
2
4
5
7
8
9
1
2
3
4
-
-
-
-
Diode
Essential part number
3 = Fast recovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
6
7
-
-
-
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
code (see Recovery Characteristics table)
t
rr
P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
8
-7 S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
T = Threaded Top Terminal 3/8" 24UNF-2A
9
-
C = Ceramic housing
3
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SD453N/R Series
Bulletin I2076 rev. A 09/94
Outlines Table
CERAMIC HOUSING
26 (1.023) MAX.
5(0.20) ± 0.3(0.01)
10.5 (0.41) DIA.
12 (0.47) MIN.
Case Style B-8
2
All dimensions in millimeters (inches)
C.S. 70mm
38 (1.5)
DIA. MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
17 (0.67) DIA.
3/8"-24UNF-2A
CERAMIC HOUSING
38 (1.5)
DIA. MAX.
Case Style B-8 with top thread terminal 3/8"
All dimensions in millimeters (inches)
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
4
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SD453N/R Series
Bulletin I2076 rev. A 09/94
150
140
130
120
110
100
90
150
140
130
120
110
100
90
SD453N/ R..S20 Se rie s
SD453N/ R..S20 Se rie s
R
(DC) = 0.1 K/ W
R
(DC ) = 0.1 K/ W
thJC
thJC
C o nd uc tio n Ang le
C on d u ction Pe rio d
80
80
70
90°
60°
70
120°
90°
60
120°
60°
30°
30°
180°
180°
DC
60
50
0
0
0
50 100 150 200 250 300 350 400 450
0
100 200 300 400 500 600 700
Ave ra g e Fo rwa rd C urre nt (A)
Ave ra g e Fo rwa rd Curre n t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
150
140
130
120
110
100
90
150
140
130
120
110
100
90
SD453N/ R..S30 Se rie s
SD453N/ R..S30 Se rie s
R
(DC) = 0.1 K/ W
R
(DC ) = 0.1 K/ W
thJC
thJC
C o nd uctio n Ang le
C o nd uc tio n Pe rio d
80
30°
70
60°
80
90°
180°
60
120°
60°
70
90°
50
30°
DC
600
180°
120°
40
60
0
200
400
800
100
200
300
400
500
Ave ra g e Forwa rd C urre nt (A)
Ave ra g e Fo rwa rd C urre nt (A)
Fig. 4 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
800
700
600
500
400
300
200
100
0
1000
900
800
700
600
500
400
300
200
100
0
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Limit
RMS Lim it
C o nd u c tio n Pe rio d
C o nd u ctio n Ang le
SD453N/ R..S20 Se rie s
SD453N/R..S20 Se rie s
T = 150°C
T
= 150°C
J
J
50 100 150 200 250 300 350 400 450
0
100 200 300 400 500 600 700
Ave ra g e Forwa rd C urre n t (A)
Ave ra g e Fo rwa rd C urre nt (A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
5
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SD453N/R Series
Bulletin I2076 rev. A 09/94
800
1000
900
800
700
600
500
400
300
200
100
0
DC
180°
120°
90°
60°
30°
700
180°
120°
90°
60°
600
RMS Limit
500
30°
RMS Lim it
400
300
200
100
0
C o nd u ctio n Pe rio d
C on d uc tio n Ang le
SD453N/ R..S30 Se rie s
SD453N/ R..S30 Se rie s
T
J
= 150°C
T
J
= 150°C
0
100
200
300
400
500
0
100 200 300 400 500 600 700 800
Ave ra g e Forwa rd C urre n t (A)
Ave ra g e Forwa rd C urre nt (A)
Fig. 7 - Forward Power Loss Characteristics
Fig. 8 - Forward Power Loss Characteristics
9000
8000
7000
6000
5000
4000
3000
2000
10000
9000
8000
7000
6000
5000
4000
3000
2000
At Any Ra te d Lo a d Co nd itio n An d With
Ma xim um Non Re p e titive Surg e C urre nt
Ve rsus Pulse Tra in Dura tion .
Ra te d V
Ap p lie d Follo win g Surg e .
RRM
Initia l T = 150 °C
J
In itia l T = 150 °C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
SD453N/ R..S20 Se rie s
10
SD453N/ R..S20 Se rie s
1
100
0.01
0.1
Pulse Tra in Dura tio n (s)
1
Nu m b e r Of Eq ua l Am p litud e Ha lf C ycle C urren t Pulse s (N)
Fig. 9 - Maximum Non-repetitive Surge Current
Fig. 10 - Maximum Non-repetitive Surge Current
10000
9000
8000
7000
6000
5000
4000
3000
2000
9000
At Any Ra te d Loa d C on d itio n And With
Ma ximum No n Re p e titive Surg e C urre n t
Ve rsus Pulse Tra in Dura tio n.
Ra te d V
Ap p lie d Fo llo win g Surg e .
RRM
8000
7000
6000
5000
4000
3000
2000
In itia l T = 150 °C
Initia l T = 150 °C
J
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
SD453N/ R..S30 Se rie s
SD453N/ R..S30 Se rie s
1
10
100
0.01
0.1
Pulse Tra in Dura tio n (s)
1
Nu m b e r Of Eq ua l Am p litud e Ha lf C ycle C urren t Pulse s (N)
Fig.11 - Maximum Non-repetitive Surge Current
Fig.12 - Maximum Non-repetitive Surge Current
6
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SD453N/R Series
Bulletin I2076 rev. A 09/94
10000
1000
100
10000
1000
100
SD453N/ R..S30 Se ries
SD453N/ R..S20 Se rie s
T = 25°C
J
T = 25°C
J
T = 150°C
J
T = 150°C
J
0.5
1
1.5
2
2.5
3
3.5
0.5
1
1.5
2
2.5
3
3.5
4
Insta nta n e o us Fo rwa rd Volta g e (V)
Insta n ta ne o us Forwa rd Volta g e (V)
Fig. 13 - Forward Voltage Drop Characteristics
Fig. 14 - Forward Voltage Drop Characteristics
1
Ste a d y Sta te Va lue :
R
= 0.1 K/ W
th JC
(DC O p e ra tion )
0.1
0.01
SD453N/R..S20/ S30 Se rie s
0.001
0.001
0.01
0.1
Sq ua re Wa ve Pulse Dura tion (s)
1
10
Fig. 15 - Thermal Impedance ZthJC Characteristic
100
80
60
40
20
0
100
V
V
FP
F P
T = 150°C
T = 150°C
J
J
I
I
80
60
40
20
0
T = 25°C
T = 25°C
J
J
SD453N/ R..S20 Se rie s
1200 1600 2000
SD453N/ R..S30 Se rie s
1200 1600 2000
0
400
800
0
400
800
Ra te Of Rise Of Forw a rd C urre n t - d i/d t (A/ us)
Ra te Of Rise Of Forw a rd C urre n t - d i/d t (A/ us)
Fig. 16 - Typical Forward Recovery Characteristics
Fig. 17 - Typical Forward Recovery Characteristics
7
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SD453N/R Series
Bulletin I2076 rev. A 09/94
450
400
350
300
250
200
150
100
50
800
700
600
500
400
300
200
100
0
6
I
= 1000 A
FM
I
= 1000 A
SD453N/ R..S20 Se rie s
FM
Sine Pu lse
Sin e Pulse
5.5
T = 150 °C ; V > 100V
r
J
500 A
5
4.5
4
500 A
150 A
I
= 1000 A
FM
Sine Pu lse
500 A
150 A
150 A
3.5
3
SD453N/ R..S20 Se rie s
T = 150 °C ; V > 100V
SD453N/R..S20 Se rie s
T = 150 °C; V > 100V
2.5
2
r
J
J
r
0
0
50 100 150 200 250 300
10
100
1000
0
50 100 150 200 250 300
Ra te Of Fa ll Of Fo rwa rd C urre n t - d i/ d t (A/µs)
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs) Ra te O f Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Fig. 19 - Recovery Charge Characteristics
Fig. 18 - Recovery Time Characteristics
Fig. 20 - Recovery Current Characteristics
1200
550
7
SD453N/R..S30 Se rie s
I
= 1000 A
500
450
400
350
300
250
200
150
100
50
FM
6.5
T = 150 °C , V > 100V
I
= 1000 A
r
FM
Sine Pulse
J
Sine Pu lse
1000
800
600
400
200
0
6
5.5
5
500 A
150 A
I
= 1000 A
FM
Sin e Pulse
500 A
4.5
4
500 A
150 A
150 A
3.5
3
SD453N/ R..S30 Se rie s
SD453N/ R..S30 Se rie s
T = 150 °C ; V > 100V
T = 150 °C; V > 100V
r
J
r
J
2.5
2
0
0
50 100 150 200 250 300
0
50 100 150 200 250 300
10
100
1000
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs) Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs)
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Fig. 21 - Recovery Time Characteristics
Fig. 22 - Recovery Charge Characteristics
Fig. 23 - Recovery Current Characteristics
1E4
1E4
10 jo ule s p e r p u lse
6
4
2
1
1000
600
400
0.6
1500
2000
3000
4000
200
100
50 Hz
0.4
1E3
1E3
1E2
0.2
SD453N/R..S20 Se rie s
Sinu so id a l Pulse
0.1
T = 70°C , VRRM = 800V
d v/d t = 1000V/us
C
6000
10000
tp
SD453N/R..S20 Se rie s
Sinu so id a l Pulse
RRM
= 150°C, V = 800V
TJ
tp
d v/d t = 1000V/µs
1E2
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sew id th (µs)
Pulse Ba se w id th (µs)
Fig. 25 - Frequency Characteristics
Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics
8
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SD453N/R Series
Bulletin I2076 rev. A 09/94
1E4
1E3
1E2
1E4
1E3
1E2
10 jo u le s p e r p u lse
tp
6
4
2
1
200
100
50 Hz
400
0.8
600
1000
0.6
1500
2000
0.4
SD453N/R..S20 Se rie s
Tra p ezo id a l Pulse
T = 70°C , VRRM = 800V
d v/d t = 1000V/us,
d i/d t = 300A/us
SD453N/R..S20 Se rie s
Tra p e zo id a l Pulse
3000
4000
RRM
T = 150°C , V
= 800V
C
J
tp
d v/d t = 1000V/µs; d i/d t = 300A/µs
6000
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba sew id th (µs)
Fig. 26 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 27 - Frequency Characteristics
1E4
1E4
1E3
1E2
SD453N/R..S20 Se rie s
Tra p ezo id a l Pulse
T = 150°C , V
= 800V
J
RRM
d v/d t = 1000V/µs
d i/d t = 100A/µs
tp
10 jo ule s p er p ulse
6
4
2
1
1000
600
400 200
100 50 Hz
tp
0.6
1E3
1E2
1500
2000
3000
0.4
SD453N/R..S20 Se rie s
Tra p e zo id a l Pulse
0.2
4000
6000
T = 70°C, VRR M = 800V
C
d v/d t = 1000V/u s,
d i/d t = 100A/us
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id th (µs)
Pulse Ba se wid th (µs)
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 29 - Frequency Characteristics
1E4
1E4
1E3
1E2
10 jo ule s p e r p ulse
6
4
2
1
6000
400
200
100
50 Hz
0.8
0.6
1000
1500
2000
3000
0.4
1E3
1E2
0.2
SD453N/R..S30 Se rie s
Sinuso id a l Pulse
TC= 70°C , VRRM = 800V
4000
6000
0.1
SD453N/R...S30 Serie s
Sin uso id a l Pulse
T = 150°C , VRRM = 800V
t p
d v/d t = 1000V/us
J
t p
d v/ d t = 1000V/µs
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba sew id th (µs)
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 31 - Frequency Characteristics
9
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SD453N/R Series
Bulletin I2076 rev. A 09/94
1E4
1E4
1E3
1E2
10 jo u le s p e r p u lse
tp
6
4
2
100
200
50 Hz
400
1E3
1
600
0.8
1000
1500
2000
3000
4000
0.6
SD453N/ R..S30 Se rie s
Tra p e zo id a l Pulse
SD453N/R..S30 Se rie s
Tra p e zo id a l Pulse
T = 150°C , VRRM = 800V
T = 70°C, V RRM = 800V
C
J
dv/ d t = 1000V/us,
di/ d t = 300A/ us
tp
d v/d t = 1000V/µs; d i/d t = 300A/µs
1E2
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 33 - Frequency Characteristics
1E4
1E4
1E3
1E2
10 jo ule s p e r p u lse
tp
6
4
2
50 Hz
200 100
400
1
600
0.8
1000
1E3
0.6
1500
2000
0.4
SD453N/ R..S30 Se rie s
Tra p e zoid a l Pulse
TC= 70°C, VRRM = 800V
dv/ d t = 1000V/ us,
di/d t = 100A/ us
3000
4000
SD453N/R..S30 Se rie s
Tra p ezo id a l Pulse
T = 150°C , VRRM = 800V
J
tp
dv/ dt = 1000V/ µs; d i/ d t = 100A/ µs
1E2
1E1
1E1
1E2
1E3
1E4
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 35 - Frequency Characteristics
10
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