SD453R12S30PTCPBF [INFINEON]

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SD453R12S30PTCPBF
型号: SD453R12S30PTCPBF
厂家: Infineon    Infineon
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Bulletin I2076 rev. A 09/94  
SD453N/R SERIES  
FAST RECOVERY DIODES  
Stud Version  
Features  
400A  
450A  
High power FAST recovery diode series  
2.0 to 3.0 µs recovery time  
High voltage ratings up to 2500V  
High current capability  
Optimized turn on and turn off characteristics  
Low forward recovery  
Fast and soft reverse recovery  
Compression bonded encapsulation  
Stud version case style B-8  
Maximum junction temperature 150°C  
TypicalApplications  
Snubber diode for GTO  
High voltage free-wheeling diode  
Fast recovery rectifier applications  
Major Ratings and Characteristics  
SD453N/R  
Parameters  
IF(AV)  
Units  
S20  
400  
S30  
450  
A
°C  
A
@ TC  
70  
70  
IF(RMS)  
IFSM  
630  
710  
@ 50Hz  
@ 60Hz  
9300  
9730  
9600  
10050  
A
A
VRRM range  
1200 to 2500 1200 to 2500  
V
t
2.0  
25  
3.0  
25  
µs  
°C  
°C  
rr  
@ TJ  
case style  
B-8  
TJ  
- 40 to 150  
1
www.irf.com  
SD453N/R Series  
Bulletin I2076 rev. A 09/94  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
VRRM , maximum repetitive  
VRSM , maximum non-  
IRRM max.  
Type number  
SD453N/R  
peak reverse voltage  
V
repetitive peak rev. voltage  
V
@ TJ = TJ max.  
mA  
12  
16  
20  
25  
1200  
1600  
2000  
2500  
1300  
1700  
2100  
2600  
50  
Forward Conduction  
SD453N/R  
Parameter  
Units Conditions  
S20  
400  
70  
S30  
450  
70  
IF(AV) Max. average forward current  
@ case temperature  
A
°C  
A
180° conduction, half sine wave  
IF(RMS) Max. RMS forward current  
630  
710  
@ case temperature  
55  
52  
9600  
10050  
8070  
8450  
460  
°C  
IFSM  
Max. peak, one-cycle forward,  
non-repetitive surge current  
9300  
9730  
7820  
8190  
432  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
A
t = 8.3ms reapplied  
Sinusoidal half wave,  
I2t  
Maximum I2t for fusing  
t = 10ms No voltage Initial TJ = TJ max.  
t = 8.3ms reapplied  
395  
420  
KA2s  
306  
326  
t = 10ms 100% VRRM  
279  
297  
t = 8.3ms reapplied  
I2t  
Maximum I2t for fusing  
4320  
4600  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VF(TO)1 Low level value of threshold  
1.00  
1.09  
0.95  
1.04  
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
voltage  
V
VF(TO)2 High level value of threshold  
voltage  
(I > π x IF(AV)),TJ = TJ max.  
r
Low level value of forward  
slope resistance  
1
f
mΩ  
0.80  
0.60  
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
(I > π x IF(AV)),TJ = TJ max.  
r
High level value of forward  
slope resistance  
2
f
0.74  
2.20  
0.54  
1.85  
VFM  
Max. forward voltage drop  
V
I = 1500A, TJ = TJ max, t = 10ms sinusoidal wave  
pk p  
Recovery Characteristics  
Testconditions  
Max.values @TJ=150°C  
TJ=25 oC  
Code  
typical t  
I
di/dt  
pk  
V
t
Q
I
rr  
rr  
r
rr  
rr  
@ 25% IRRM Square Pulse  
@ 25% IRRM  
(µs)  
2.0  
3.0  
(A)  
(A/µs)  
50  
(V)  
- 50  
- 50  
(µs)  
(µC)  
250  
380  
(A)  
S20  
S30  
1000  
1000  
3.5  
5.0  
120  
150  
50  
2
www.irf.com  
SD453N/R Series  
Bulletin I2076 rev. A 09/94  
Thermal and Mechanical Specifications  
SD453N/R  
S20 S30  
Parameter  
Units Conditions  
TJ  
T
Max. junction operating temperature range  
Max. storage temperature range  
-40 to 150  
°C  
-40 to 150  
stg  
RthJC Max. thermal resistance, junction to case  
RthCS Max. thermal resistance, case  
to heatsink  
0.1  
DC operation  
K/W  
Mounting surface, smooth, flat and  
greased  
0.04  
T
Mounting torque, ± 10%  
Approximate weight  
Case style  
50  
Nm  
g
Not lubricated threads  
wt  
454  
B-8  
See Outline Table  
RthJ-hs Conduction  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidal conduction Rectangular conduction  
Conduction angle  
Units Conditions  
TJ = TJ max.  
S20  
S30  
S20  
S30  
180°  
120°  
90°  
0.010  
0.010  
0.008  
0.008  
0.014  
0.017  
0.025  
0.042  
0.014  
0.017  
0.025  
0.042  
0.014  
0.019  
0.026  
0.042  
0.014  
0.019  
0.026  
0.042  
K/W  
60°  
30°  
Ordering Information Table  
Device Code  
SD 45  
3
N
25 S30  
P
S
C
3
6
1
2
4
5
7
8
9
1
2
3
4
-
-
-
-
Diode  
Essential part number  
3 = Fast recovery  
N = Stud Normal Polarity (Cathode to Stud)  
R = Stud Reverse Polarity (Anode to Stud)  
5
6
7
-
-
-
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)  
code (see Recovery Characteristics table)  
t
rr  
P = Stud base B-8 3/4" 16UNF-2A  
M = Stud base B-8 M24 X 1.5  
8
-7 S = Isolated lead with silicone sleeve  
(Red = Reverse Polarity; Blue = Normal Polarity)  
None = Not isolated lead  
T = Threaded Top Terminal 3/8" 24UNF-2A  
9
-
C = Ceramic housing  
3
www.irf.com  
SD453N/R Series  
Bulletin I2076 rev. A 09/94  
Outlines Table  
CERAMIC HOUSING  
26 (1.023) MAX.  
5(0.20) ± 0.3(0.01)  
10.5 (0.41) DIA.  
12 (0.47) MIN.  
Case Style B-8  
2
All dimensions in millimeters (inches)  
C.S. 70mm  
38 (1.5)  
DIA. MAX.  
SW 45  
3/4"-16UNF-2A *  
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.  
17 (0.67) DIA.  
3/8"-24UNF-2A  
CERAMIC HOUSING  
38 (1.5)  
DIA. MAX.  
Case Style B-8 with top thread terminal 3/8"  
All dimensions in millimeters (inches)  
SW 45  
3/4"-16UNF-2A *  
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.  
4
www.irf.com  
SD453N/R Series  
Bulletin I2076 rev. A 09/94  
150  
140  
130  
120  
110  
100  
90  
150  
140  
130  
120  
110  
100  
90  
SD453N/ R..S20 Se rie s  
SD453N/ R..S20 Se rie s  
R
(DC) = 0.1 K/ W  
R
(DC ) = 0.1 K/ W  
thJC  
thJC  
C o nd uc tio n Ang le  
C on d u ction Pe rio d  
80  
80  
70  
90°  
60°  
70  
120°  
90°  
60  
120°  
60°  
30°  
30°  
180°  
180°  
DC  
60  
50  
0
0
0
50 100 150 200 250 300 350 400 450  
0
100 200 300 400 500 600 700  
Ave ra g e Fo rwa rd C urre nt (A)  
Ave ra g e Fo rwa rd Curre n t (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
150  
140  
130  
120  
110  
100  
90  
150  
140  
130  
120  
110  
100  
90  
SD453N/ R..S30 Se rie s  
SD453N/ R..S30 Se rie s  
R
(DC) = 0.1 K/ W  
R
(DC ) = 0.1 K/ W  
thJC  
thJC  
C o nd uctio n Ang le  
C o nd uc tio n Pe rio d  
80  
30°  
70  
60°  
80  
90°  
180°  
60  
120°  
60°  
70  
90°  
50  
30°  
DC  
600  
180°  
120°  
40  
60  
0
200  
400  
800  
100  
200  
300  
400  
500  
Ave ra g e Forwa rd C urre nt (A)  
Ave ra g e Fo rwa rd C urre nt (A)  
Fig. 4 - Current Ratings Characteristics  
Fig. 3 - Current Ratings Characteristics  
800  
700  
600  
500  
400  
300  
200  
100  
0
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
DC  
180°  
120°  
90°  
60°  
30°  
180°  
120°  
90°  
60°  
30°  
RMS Limit  
RMS Lim it  
C o nd u c tio n Pe rio d  
C o nd u ctio n Ang le  
SD453N/ R..S20 Se rie s  
SD453N/R..S20 Se rie s  
T = 150°C  
T
= 150°C  
J
J
50 100 150 200 250 300 350 400 450  
0
100 200 300 400 500 600 700  
Ave ra g e Forwa rd C urre n t (A)  
Ave ra g e Fo rwa rd C urre nt (A)  
Fig. 5 - Forward Power Loss Characteristics  
Fig. 6 - Forward Power Loss Characteristics  
5
www.irf.com  
SD453N/R Series  
Bulletin I2076 rev. A 09/94  
800  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
DC  
180°  
120°  
90°  
60°  
30°  
700  
180°  
120°  
90°  
60°  
600  
RMS Limit  
500  
30°  
RMS Lim it  
400  
300  
200  
100  
0
C o nd u ctio n Pe rio d  
C on d uc tio n Ang le  
SD453N/ R..S30 Se rie s  
T = 150°C  
J
SD453N/ R..S30 Se rie s  
T
J
= 150°C  
0
100  
200  
300  
400  
500  
0
100 200 300 400 500 600 700 800  
Ave ra g e Forwa rd C urre n t (A)  
Ave ra g e Forwa rd C urre nt (A)  
Fig. 7 - Forward Power Loss Characteristics  
Fig. 8 - Forward Power Loss Characteristics  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
10000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
At Any Ra te d Lo a d Co nd itio n An d With  
Ma xim um Non Re p e titive Surg e C urre nt  
Ve rsus Pulse Tra in Dura tion .  
Ra te d V  
Ap p lie d Follo win g Surg e .  
RRM  
Initia l T = 150 °C  
J
In itia l T = 150 °C  
J
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
No Volta g e Re a p p lie d  
Ra te d V  
Re a p p lie d  
RRM  
SD453N/ R..S20 Se rie s  
10  
SD453N/ R..S20 Se rie s  
1
100  
0.01  
0.1  
Pulse Tra in Dura tio n (s)  
1
Nu m b e r Of Eq ua l Am p litud e Ha lf C ycle C urren t Pulse s (N)  
Fig. 9 - Maximum Non-repetitive Surge Current  
Fig. 10 - Maximum Non-repetitive Surge Current  
10000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
9000  
At Any Ra te d Loa d C on d itio n And With  
Ma ximum No n Re p e titive Surg e C urre n t  
Ve rsus Pulse Tra in Dura tio n.  
Ra te d V  
Ap p lie d Fo llo win g Surg e .  
RRM  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
In itia l T = 150 °C  
Initia l T = 150 °C  
J
J
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
No Volta g e Re a p p lie d  
Ra te d V  
Re a p p lie d  
RRM  
SD453N/ R..S30 Se rie s  
SD453N/ R..S30 Se rie s  
1
10  
100  
0.01  
0.1  
Pulse Tra in Dura tio n (s)  
1
Nu m b e r Of Eq ua l Am p litud e Ha lf C ycle C urren t Pulse s (N)  
Fig.11 - Maximum Non-repetitive Surge Current  
Fig.12 - Maximum Non-repetitive Surge Current  
6
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SD453N/R Series  
Bulletin I2076 rev. A 09/94  
10000  
1000  
100  
10000  
1000  
100  
SD453N/ R..S30 Se ries  
SD453N/ R..S20 Se rie s  
T = 25°C  
J
T = 25°C  
J
T = 150°C  
J
T = 150°C  
J
0.5  
1
1.5  
2
2.5  
3
3.5  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Insta nta n e o us Fo rwa rd Volta g e (V)  
Insta n ta ne o us Forwa rd Volta g e (V)  
Fig. 13 - Forward Voltage Drop Characteristics  
Fig. 14 - Forward Voltage Drop Characteristics  
1
Ste a d y Sta te Va lue :  
R
= 0.1 K/ W  
th JC  
(DC O p e ra tion )  
0.1  
0.01  
SD453N/R..S20/ S30 Se rie s  
0.001  
0.001  
0.01  
0.1  
Sq ua re Wa ve Pulse Dura tion (s)  
1
10  
Fig. 15 - Thermal Impedance ZthJC Characteristic  
100  
80  
60  
40  
20  
0
100  
V
V
FP  
F P  
T = 150°C  
T = 150°C  
J
J
I
I
80  
60  
40  
20  
0
T = 25°C  
T = 25°C  
J
J
SD453N/ R..S20 Se rie s  
1200 1600 2000  
SD453N/ R..S30 Se rie s  
1200 1600 2000  
0
400  
800  
0
400  
800  
Ra te Of Rise Of Forw a rd C urre n t - d i/d t (A/ us)  
Ra te Of Rise Of Forw a rd C urre n t - d i/d t (A/ us)  
Fig. 16 - Typical Forward Recovery Characteristics  
Fig. 17 - Typical Forward Recovery Characteristics  
7
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SD453N/R Series  
Bulletin I2076 rev. A 09/94  
450  
400  
350  
300  
250  
200  
150  
100  
50  
800  
700  
600  
500  
400  
300  
200  
100  
0
6
I
= 1000 A  
FM  
I
= 1000 A  
SD453N/ R..S20 Se rie s  
FM  
Sine Pu lse  
Sin e Pulse  
5.5  
T = 150 °C ; V > 100V  
r
J
500 A  
5
4.5  
4
500 A  
150 A  
I
= 1000 A  
FM  
Sine Pu lse  
500 A  
150 A  
150 A  
3.5  
3
SD453N/ R..S20 Se rie s  
T = 150 °C ; V > 100V  
SD453N/R..S20 Se rie s  
T = 150 °C; V > 100V  
2.5  
2
r
J
J
r
0
0
50 100 150 200 250 300  
10  
100  
1000  
0
50 100 150 200 250 300  
Ra te Of Fa ll Of Fo rwa rd C urre n t - d i/ d t (A/µs)  
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs) Ra te O f Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)  
Fig. 19 - Recovery Charge Characteristics  
Fig. 18 - Recovery Time Characteristics  
Fig. 20 - Recovery Current Characteristics  
1200  
550  
7
SD453N/R..S30 Se rie s  
I
= 1000 A  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
FM  
6.5  
T = 150 °C , V > 100V  
I
= 1000 A  
r
FM  
Sine Pulse  
J
Sine Pu lse  
1000  
800  
600  
400  
200  
0
6
5.5  
5
500 A  
150 A  
I
= 1000 A  
FM  
Sin e Pulse  
500 A  
4.5  
4
500 A  
150 A  
150 A  
3.5  
3
SD453N/ R..S30 Se rie s  
SD453N/ R..S30 Se rie s  
T = 150 °C ; V > 100V  
T = 150 °C; V > 100V  
r
J
r
J
2.5  
2
0
0
50 100 150 200 250 300  
0
50 100 150 200 250 300  
10  
100  
1000  
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs) Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs)  
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)  
Fig. 21 - Recovery Time Characteristics  
Fig. 22 - Recovery Charge Characteristics  
Fig. 23 - Recovery Current Characteristics  
1E4  
1E4  
10 jo ule s p e r p u lse  
6
4
2
1
1000  
600  
400  
0.6  
1500  
2000  
3000  
4000  
200  
100  
50 Hz  
0.4  
1E3  
1E3  
1E2  
0.2  
SD453N/R..S20 Se rie s  
Sinu so id a l Pulse  
0.1  
T = 70°C , VRRM = 800V  
d v/d t = 1000V/us  
C
6000  
10000  
tp  
SD453N/R..S20 Se rie s  
Sinu so id a l Pulse  
RRM  
= 150°C, V = 800V  
TJ  
tp  
d v/d t = 1000V/µs  
1E2  
1E1  
1E2  
1E3  
1E4  
1E1  
1E2  
1E3  
1E4  
Pulse Ba sew id th (µs)  
Pulse Ba se w id th (µs)  
Fig. 25 - Frequency Characteristics  
Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics  
8
www.irf.com  
SD453N/R Series  
Bulletin I2076 rev. A 09/94  
1E4  
1E3  
1E2  
1E4  
1E3  
1E2  
10 jo u le s p e r p u lse  
tp  
6
4
2
1
200  
100  
50 Hz  
400  
0.8  
600  
1000  
0.6  
1500  
2000  
0.4  
SD453N/R..S20 Se rie s  
Tra p ezo id a l Pulse  
T = 70°C , VRRM = 800V  
d v/d t = 1000V/us,  
d i/d t = 300A/us  
SD453N/R..S20 Se rie s  
Tra p e zo id a l Pulse  
3000  
4000  
RRM  
T = 150°C , V  
= 800V  
C
J
tp  
d v/d t = 1000V/µs; d i/d t = 300A/µs  
6000  
1E1  
1E2  
1E3  
1E4  
1E1  
1E2  
1E3  
1E4  
Pulse Ba se wid th (µs)  
Pulse Ba sew id th (µs)  
Fig. 26 - Maximum Total Energy Loss Per Pulse Characteristics  
Fig. 27 - Frequency Characteristics  
1E4  
1E4  
1E3  
1E2  
SD453N/R..S20 Se rie s  
Tra p ezo id a l Pulse  
T = 150°C , V  
= 800V  
J
RRM  
d v/d t = 1000V/µs  
d i/d t = 100A/µs  
tp  
10 jo ule s p er p ulse  
6
4
2
1
1000  
600  
400 200  
100 50 Hz  
tp  
0.6  
1E3  
1E2  
1500  
2000  
3000  
0.4  
SD453N/R..S20 Se rie s  
Tra p e zo id a l Pulse  
0.2  
4000  
6000  
T = 70°C, VRR M = 800V  
C
d v/d t = 1000V/u s,  
d i/d t = 100A/us  
1E1  
1E2  
1E3  
1E4  
1E1  
1E2  
1E3  
1E4  
Pulse Ba se w id th (µs)  
Pulse Ba se wid th (µs)  
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics  
Fig. 29 - Frequency Characteristics  
1E4  
1E4  
1E3  
1E2  
10 jo ule s p e r p ulse  
6
4
2
1
6000  
400  
200  
100  
50 Hz  
0.8  
0.6  
1000  
1500  
2000  
3000  
0.4  
1E3  
1E2  
0.2  
SD453N/R..S30 Se rie s  
Sinuso id a l Pulse  
TC= 70°C , VRRM = 800V  
4000  
6000  
0.1  
SD453N/R...S30 Serie s  
Sin uso id a l Pulse  
T = 150°C , VRRM = 800V  
t p  
d v/d t = 1000V/us  
J
t p  
d v/ d t = 1000V/µs  
1E1  
1E2  
1E3  
1E4  
1E1  
1E2  
1E3  
1E4  
Pulse Ba se wid th (µs)  
Pulse Ba sew id th (µs)  
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics  
Fig. 31 - Frequency Characteristics  
9
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SD453N/R Series  
Bulletin I2076 rev. A 09/94  
1E4  
1E4  
1E3  
1E2  
10 jo u le s p e r p u lse  
tp  
6
4
2
100  
200  
50 Hz  
400  
1E3  
1
600  
0.8  
1000  
1500  
2000  
3000  
4000  
0.6  
SD453N/ R..S30 Se rie s  
Tra p e zo id a l Pulse  
SD453N/R..S30 Se rie s  
Tra p e zo id a l Pulse  
T = 150°C , VRRM = 800V  
T = 70°C, V RRM = 800V  
C
J
dv/ d t = 1000V/us,  
di/ d t = 300A/ us  
tp  
d v/d t = 1000V/µs; d i/d t = 300A/µs  
1E2  
1E1  
1E2  
1E3  
1E4  
1E1  
1E2  
1E3  
1E4  
Pulse Ba se wid th (µs)  
Pulse Ba se wid th (µs)  
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics  
Fig. 33 - Frequency Characteristics  
1E4  
1E4  
1E3  
1E2  
10 jo ule s p e r p u lse  
tp  
6
4
2
50 Hz  
200 100  
400  
1
600  
0.8  
1000  
1E3  
0.6  
1500  
2000  
0.4  
SD453N/ R..S30 Se rie s  
Tra p e zoid a l Pulse  
TC= 70°C, VRRM = 800V  
dv/ d t = 1000V/ us,  
di/d t = 100A/ us  
3000  
4000  
SD453N/R..S30 Se rie s  
Tra p ezo id a l Pulse  
T = 150°C , VRRM = 800V  
J
tp  
dv/ dt = 1000V/ µs; d i/ d t = 100A/ µs  
1E2  
1E1  
1E1  
1E2  
1E3  
1E4  
1E2  
1E3  
1E4  
Pulse Ba se wid th (µs)  
Pulse Ba se wid th (µs)  
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics  
Fig. 35 - Frequency Characteristics  
10  
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