SD500N30MSC [INFINEON]

STANDARD RECOVERY DIODES; 标准恢复二极管
SD500N30MSC
型号: SD500N30MSC
厂家: Infineon    Infineon
描述:

STANDARD RECOVERY DIODES
标准恢复二极管

整流二极管 高压 高压大电源 高功率电源
文件: 总6页 (文件大小:60K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Bulletin I2095 rev. A 08/94  
SD500N/R SERIES  
Stud Version  
STANDARD RECOVERY DIODES  
Features  
475A  
Wide current range  
High voltage ratings up to 4500V  
High surge current capabilities  
Stud cathode and stud anode version  
Standard JEDEC types  
TypicalApplications  
Converters  
Power supplies  
High power drives  
Auxiliary system supplies for traction applications  
Major Ratings and Characteristics  
Parameters  
IF(AV)  
SD500N/R  
Units  
475  
55  
A
°C  
A
@ TC  
IF(RMS)  
IFSM  
745  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
7500  
A
7850  
A
I2t  
281  
KA2s  
KA2s  
V
257  
VRRM range  
TJ  
3000 to 4500  
- 40 to 150  
case style  
B-8  
°C  
1
www.irf.com  
SD500N/R Series  
Bulletin I2095 rev. A 08/94  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
VRRM , maximum repetitive  
VRSM , maximum non-  
IRRM max.  
Type number  
SD500N/R  
peak reverse voltage  
V
repetitive peak rev. voltage  
V
@ TJ = TJ max.  
mA  
30  
36  
40  
45  
3000  
3600  
4000  
4500  
3100  
3700  
4100  
4600  
50  
Forward Conduction  
Parameter  
SD500N/R  
Units Conditions  
IF(AV) Max. average forward current  
@ Case temperature  
475  
55  
A
°C  
A
180° conduction, half sine wave  
180° conduction, half sine wave  
DC @ 40°C case temperature  
IF(AV) Max. average forward current  
@ Case temperature  
300  
100  
745  
°C  
A
IF(RMS) Max. RMS forward current  
IFSM  
Max. peak, one-cycle forward,  
7500  
7850  
6310  
6600  
281  
t = 10ms  
t = 8.3ms reapplied  
t = 10ms 50% VRRM  
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 50% VRRM  
t = 8.3ms reapplied  
No voltage  
non-repetitive surge current  
A
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
257  
KA2s  
199  
182  
I2t  
Maximum I2t for fusing  
2810  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VF(TO)1 Low level value of threshold  
0.88  
0.97  
0.78  
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
voltage  
V
VF(TO)2 High level value of threshold  
voltage  
(I > π x IF(AV)),TJ = TJ max.  
r
Low level value of forward  
slope resistance  
1
f
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
mΩ  
r
High level value of forward  
slope resistance  
2
f
0.72  
1.66  
(I > π x IF(AV)),TJ = TJ max.  
VFM  
Max. forward voltage drop  
V
I
= 1000A, TJ = TJ max, t = 10ms sinusoidal wave  
p
pk  
2
www.irf.com  
SD500N/R Series  
Bulletin I2095 rev. A 08/94  
Thermal and Mechanical Specifications  
Parameter  
SD500N/R  
Units Conditions  
TJ  
T
Max. junction operating temperature range  
Max. storage temperature range  
-40 to 150  
-55 to 200  
°C  
stg  
RthJC Max. thermal resistance, junction to case  
0.1  
DC operation  
K/W  
RthCS Max. thermal resistance, case  
to heatsink  
Mounting surface, smooth, flat and  
greased  
0.04  
T
Max. allowed mounting torque ±10%  
Approximate weight  
50  
Nm  
g
Not lubricated threads  
wt  
454  
Case style  
B-8  
See Outline Table  
RthJC Conduction  
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)  
Conduction angle Sinusoidal conduction Rectangular conduction Units  
Conditions  
TJ = TJ max.  
180°  
120°  
90°  
0.012  
0.014  
0.017  
0.025  
0.042  
0.008  
0.014  
0.019  
0.026  
0.042  
K/W  
60°  
30°  
Ordering Information Table  
Device Code  
SD 50  
0
N
45  
P
S
C
3
4
5
6
1
2
7
8
1
2
3
4
-
-
-
-
Diode  
Essential part number  
0 = Standardrecovery  
N = Stud Normal Polarity (Cathode to Stud)  
R = Stud Reverse Polarity (Anode to Stud)  
5
6
-
-
Voltage code: Code x 100 = VRRM (See Voltage Ratings table)  
P = Stud base B-8 3/4" 16UNF-2A  
M = Stud base B-8 M24 X 1.5  
7
-
S = Isolated lead with silicone sleeve  
(Red = Reverse Polarity; Blue = Normal Polarity)  
T = ThreadedTopTerminal3/8"24UNF-2A  
None = Non isolated lead  
8
-
C = CeramicHousing  
NOTE: Available for rotating applications (Contact factory)  
3
www.irf.com  
SD500N/R Series  
Bulletin I2095 rev. A 08/94  
Outlines Table  
CERAMIC HOUSING  
26 (1.023) MAX.  
5(0.20) ± 0.3(0.01)  
10.5 (0.41) DIA.  
12 (0.47) MIN.  
Case Style B-8  
All dimensions in millimeters (inches)  
2
C.S. 70mm  
38 (1.5)  
DIA. MAX.  
SW 45  
3/4"-16UNF-2A *  
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.  
17 (0.67) DIA.  
3/8"-24UNF-2A  
CERAMIC HOUSING  
38 (1.5)  
DIA. MAX.  
Case Style B-8 with top thread terminal 3/8"  
All dimensions in millimeters (inches)  
SW 45  
3/4"-16UNF-2A *  
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.  
4
www.irf.com  
SD500N/R Series  
Bulletin I2095 rev. A 08/94  
150  
140  
130  
120  
110  
100  
90  
150  
140  
130  
120  
110  
100  
90  
SD500N/ R Se rie s  
SD500N/ R Se rie s  
R
(DC ) = 0.1 K/W  
R
(DC ) = 0.1 K/W  
thJ C  
thJC  
C on d uc tion Pe rio d  
Co n d uc tio n Ang le  
80  
70  
80  
30°  
60°  
60  
30°  
90°  
70  
60°  
120°  
180°  
50  
90°  
60  
120°  
40  
180°  
DC  
50  
30  
0
100  
200  
300  
400  
500  
0
100 200 300 400 500 600 700 800  
Ave ra g e Forwa rd C urre nt (A)  
Ave ra g e Forw a rd C urre nt (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
900  
R
800  
180°  
=
0
.
0
0
.
0
1
700  
600  
500  
400  
300  
200  
100  
0
120°  
90°  
60°  
30°  
4
K
K
/
/
W
W
-
D
e
l
t
a
R
RMS Lim it  
0
.
1
K
/
W
C o nd u ctio n Ang le  
0
1
.
4
K
/
W
W
SD500N/ R Se rie s  
= 150°C  
.8  
K/  
T
J
0
100  
200  
300  
400  
5
0
0
50  
75  
100  
125  
150  
Ave ra g e Forwa rd C urre nt (A)  
Ma ximum Allow a b le Am bie nt Te mp e ra ture (°C )  
Fig. 3 - Forward Power Loss Characteristics  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
DC  
180°  
120°  
90°  
60°  
30°  
R
=
0
.
0
1
K
/
W
-
D
e
l
t
a
R
RMS Lim it  
0
0
.
1
K
/
W
W
.
2
K
/
C on d uc tio n Pe rio d  
0
0
.
4
K
/
W
W
.
6
SD500N/ R Se rie s  
K
/
T
= 150°C  
1.8  
K
/ W  
J
0
100 200 300 400 500 600 700  
8
0
0
50  
75  
100  
125  
150  
Ave ra g e Forw a rd C urre nt (A)  
Ma ximum Allowa b le Amb ie n t Te m p e ra ture (°C )  
Fig. 4 - Forward Power Loss Characteristics  
5
www.irf.com  
SD500N/R Series  
Bulletin I2095 rev. A 08/94  
8000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
At An y Ra te d Lo a d C ond itio n An d With  
50% Ra te d VRRM Ap p lie d Follow in g Surg e  
Ma ximum Non Re p e titive Surg e Curre nt  
Ve rsus Pulse Tra in Dura tion.  
Initia l T = 150 °C  
J
7000  
6000  
5000  
4000  
3000  
2000  
Initia l T = 150°C  
J
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
No Volta g e Re a p p lie d  
50% Ra te d VRRM Re a p p lie d  
SD500N/ R Se rie s  
SD500N/ R Se rie s  
1
10  
100  
0.01  
0.1  
1
Numb er O f Eq ua l Amp litud e Ha lf Cyc le C urre nt Pulse s (N)  
Pulse Tra in Dura tion (s)  
Fig. 6 - Maximum Non-Repetitive Surge Current  
Fig. 5 - Maximum Non-Repetitive Surge Current  
10000  
T = 25°C  
J
T = 150°C  
J
1000  
SD500N/ R Se rie s  
100  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
In sta nta ne ous Fo rwa rd Volta g e (V)  
Fig. 7 - Forward Voltage Drop Characteristics  
1
Ste a d y Sta te Va lue :  
= 0.1 K/W  
R
thJC  
(DC Op e ra tio n)  
0.1  
0.01  
0.001  
SD500N/ R Se rie s  
0.001  
0.01  
0.1  
1
10  
Sq ua re Wa ve Pulse Dura tion (s)  
Fig. 8 - Thermal Impedance ZthJCCharacteristics  
6
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