SD700C36LPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 700A, 3600V V(RRM), Silicon, DO-200AB, BPUK-2;型号: | SD700C36LPBF |
厂家: | Infineon |
描述: | Rectifier Diode, 1 Phase, 1 Element, 700A, 3600V V(RRM), Silicon, DO-200AB, BPUK-2 高电压电源 高压 二极管 |
文件: | 总6页 (文件大小:79K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I2096 rev. B 04/00
SD700C..L SERIES
Hockey Puk Version
STANDARD RECOVERY DIODES
Features
700A
Wide current range
High voltage ratings up to 4500V
High surge current capabilities
Diffused junction
Hockey Puk version
Case style DO-200AB (B-PUK)
Typical Applications
Converters
Power supplies
High power drives
case style DO-200AB (B-PUK)
Auxiliary system supplies for traction applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD700C..L
Units
700
55
A
°C
A
@ T
hs
IF(RMS)
IFSM
I2t
1310
@ T
25
°C
A
hs
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
7500
7850
A
281
KA2s
KA2s
V
257
VRRM range
TJ
3000 to 4500
- 40 to 150
°C
1
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SD700C..L Series
Bulletin I2096 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
IRRM max.
Type number
SD700C..L
peak reverse voltage
V
repetitive peak rev. voltage
V
@ TJ = TJ max.
mA
30
36
40
45
3000
3600
4000
4500
3100
3700
4100
4600
50
Forward Conduction
Parameter
SD700C..L
Units
Conditions
IF(AV) Max. average forward current
@ Heatsink temperature
700 (345)
55 (85)
1310
A
°C
A
180° conduction, half sine wave
Double side (single side) cooled
IF(RMS) Max. RMS forward current
@ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 50% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 50% VRRM
t = 8.3ms reapplied
IFSM
Max. peak, one-cycle forward,
non-repetitive surge current
7500
7850
6310
A
6600
281
257
199
Sinusoidal halfwave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
KA2s
182
I2√t
Maximum I2√t for fusing
2810
KA2√s
t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
0.88
0.99
0.78
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
(I > π x IF(AV)),TJ = TJ max.
r
Low level value of forward
slope resistance
1
f
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(I > π x IF(AV)),TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
f
0.73
1.66
VFM
Max. forward voltage drop
V
I
= 1000A, TJ = TJ max, t = 10ms sinusoidal wave
p
pk
2
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SD700C..L Series
Bulletin I2096 rev. B 04/00
Thermal and Mechanical Specifications
Parameter
SD700C..L
-40 to 150
-55 to 200
Units
Conditions
TJ
T
Max. junction operating temperature range
Max. storage temperature range
°C
stg
RthJ-hs Max. thermal resistance, junction
to heatsink
0.11
0.05
DC operationsinglesidecooled
DC operationdouble side cooled
K/W
F
Mounting force, 10%
9800
(1000)
250
N
(Kg)
g
wt
Approximate weight
Case style
DO-200AB(B-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units Conditions
Single Side Double Side Single Side Double Side
180°
120°
90°
0.011
0.014
0.018
0.026
0.045
0.011
0.015
0.018
0.026
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
SD 70
0
C
45
L
1
2
3
4
5
6
1
2
3
4
5
6
-
-
-
-
-
-
Diode
Essential part number
0 = Standard recovery
C = Ceramic Puk
Voltage code: code x 100 = VRRM (see Voltage Ratings Table)
L = Puk Case DO-200AB (B-PUK)
3
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SD700C..L Series
Bulletin I2096 rev. B 04/00
Outline Table
3.5(0.14) DIA. NOM. x
BOTH ENDS
1.8(0.07) DEEP MIN.
34 (1.34) DIA. MAX.
TWO PLACES
0.8 (0.03)
BOTH ENDS
Case Style DO-200AB (B-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
53 (2.09) DIA. MAX.
150
140
130
120
110
100
90
150
140
130
120
110
100
90
SD700C..L Series
(Single Side Cooled)
SD700C..L Series
(Single Side Cooled)
R
(DC) = 0.11 K/W
R
(D C) = 0.11 K/W
th J-hs
th J-hs
C ondu ction Angle
C ondu ction Period
80
30°
80
60°
70
90°
70
30°
60
60°
120°
180°
90°
60
50
40
30
120°
400
50
180°
40
30
DC
20
0
100
200
300
500
0
200
400
600
800
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
4
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SD700C..L Series
Bulletin I2096 rev. B 04/00
150
140
130
120
110
100
90
150
140
130
120
110
100
90
SD700C..L Series
(Double Side Cooled)
SD700C..L Series
(Double Side Cooled)
R
(DC) = 0.05 K/W
th J-hs
R
(DC) = 0.05 K/W
thJ- hs
C ond uction Angle
Con duction Period
80
80
70
60
50
40
30
20
10
70
30°
30°
60°
60
60°
90°
90°
120°
50
180°
120°
40
180°
30
D C
20
0
200
400
600
800
1000
0
200 400 600 800 1000 1200 1400
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2500
2000
1500
1000
500
2500
2000
1500
1000
500
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Limit
RMS Limit
C ond uction P eriod
SD 700C..L Series
Con duction An gle
SD700C..L Series
T
= 150°C
T
= 150°C
J
J
0
0
0
200
400
600
800
1000
0
200 400 600 800 1000 1200 1400
Average Forward Current (A)
Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
7000
6000
5000
4000
3000
2000
9000
8000
7000
6000
5000
4000
3000
2000
1000
At Any Rated Load Condition And With
50% Rated VRR M Applied Following Surge
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
In itial T = 150 °C
In itial T = 150 °C
J
J
No Voltage Reapplied
50% Rated VRR M Reapplied
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
SD700C..L Series
SD700C..L Series
1
10
100
0.01
0.1
1
Num ber O f Eq ual Amp litude H alf C ycle C urrent P ulses (N)
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
SingleandDoubleSideCooled
Fig. 8 - Maximum Non-Repetitive Surge Current
SingleandDoubleSideCooled
5
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SD700C..L Series
Bulletin I2096 rev. B 04/00
10000
1000
100
T
= 25°C
J
T
= 150°C
J
SD 700C..L Series
0.5
1
1.5
Instantaneous Forward Voltage (V)
Fig. 9 - Forward Voltage Drop Characteristics
2
2.5
3
3.5
4
1
S tea d y S ta te V alue
0.11 K /W
(S in g le Sid e C ooled )
0.05 K /W
R
=
thJ-hs
R
=
0.1
thJ-hs
(D o ub le Sid e C oo led )
(D C O pe ra tion )
0 .0 1
S D 700C ..L S eries
0.0 01
0 .0 01
0 .01
0 .1
S qu a re W a ve P ulse Du r atio n (s)
1
1 0
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
6
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相关型号:
SD700C45LPBF
Rectifier Diode, 1 Phase, 1 Element, 700A, 4500V V(RRM), Silicon, DO-200AB, BPUK-2
INFINEON
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