SFH608-2 [INFINEON]
PHOTOTRANSISTOR, 5.3 KV, TRIOS LOW CURRENT OPTOCOUPLER; PHOTOTRANSISTOR , 5.3千伏,三重奏低电流光电耦合器型号: | SFH608-2 |
厂家: | Infineon |
描述: | PHOTOTRANSISTOR, 5.3 KV, TRIOS LOW CURRENT OPTOCOUPLER |
文件: | 总3页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SFH 608
PHOTOTRANSISTOR, 5.3 KV,TRIOS
LOW CURRENT
OPTOCOUPLER
FEATURES
• Very High CTR at IF=1 mA, V =0.5 V
Dimensions in inches (mm)
CE
Pin One ID
- SFH608-2, 63-125%
- SFH608-3, 100-200%
- SFH608-4, 160-320%
- SFH608-5, 250-500%
2
1
3
Anode
1
2
3
6
5
4
Base
.248 (6.30)
.256 (6.50)
Cathode
NC
Collector
Emitter
• Specified Minimum CTR at I =0.5 mA,
F
4
5
6
V
=1.5 V: ≥ 32% (typ. 120%)
CE
• Good CTR Linearity with Forward Current
• Low CTR Degradation
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
• High Collector-Emitter Voltage V
=55 V
CEO
.039
(1.00)
Min.
• Isolation Test Voltage: 5300 VAC
• Low Current Input
RMS
.130 (3.30)
.150 (3.81)
• Low Coupling Capacitance
4°
typ.
18° typ.
• High Common Mode Transient Immunity
• Phototransistor Optocoupler in 6 Pin DIP
Package
.110 (2.79)
.150 (3.81)
.020 (.051) min.
.010 (.25)
.014 (.35)
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
• Field Effect Stable:TRIOS*
.300 (7.62)
.347 (8.82)
VE
.100 (2.54) typ.
D
•
VDE 0884 Available with Option 1
• Underwriters Lab File #E52744
• Applications
- Telecommunications
- Industrial Controls
Maximum Ratings (T =25°C)
A
Emitter
Reverse Voltage ...................................................................................6 V
DC Forward Current ........................................................................50 mA
Surge Forward Current (tp≤10 µs) ................................................... 2.5 A
Total Power Dissipation ................................................................. 70 mW
- Office Machines
- Microprocessor System Interfaces
DESCRIPTION
The SFH 608 is an optocoupler designed for high
current transfer ratio at low input currents with the
output transistor saturated. This makes the device
ideal for low current switching applications. The
SFH608 is packaged in a six pin plastic DIP.
Detector
Collector-Emitter Voltage .................................................................. 55 V
Collector-Base Voltage .......................................................................55 V
Emitter-Base Voltage ..........................................................................7 V
Collector Current ............................................................................ 50 mA
Surge Collector Current (tp≤1 ms) ................................................100 mA
Total Power Dissipation ............................................................... 150 mW
Isolation Test Voltage (between emitter and detector, refer
*TRIOS—TRansparent IOn Shield
to climate DIN 40046 part 2 Nov. 74) (t=1 sec.)..............5300 VAC
RMS
Creepage .................................................................................................≥7 mm
Clearance.................................................................................................≥7 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ................................................... 175
Isolation Resistance
12
V =500 V, T =25°C .........................................................................≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C.......................................................................≥10
IO
A
Storage Temperature Range .......................................... -55°C to +150°C
Operating Temperature Range....................................... -55°C to +100°C
Junction Temperature ......................................................................100°C
Soldering Temperature (max. 10 sec., dip soldering:
distance to seating plane≥1.5 mm) .............................................260°C
5–1
Figure 2. Switching times T =25°C,
Characteristics (T =25°C, unless otherwise specified)
A
A
I =1 mA, V =5 V, t , t , t , t , =f(R )
F
CC
ON
R
OFF
F
L
Symbol
Typ
Unit
Condition
Emitter
Forward Voltage
Reverse Voltage
Reverse Current
Capacitance
V
1.1 (≤ 1.5)
(≥ 6)
V
I =5 mA
F
F
V
V
I = 10 µA
R
R
I
0.01 (≤ 10)
25
µA
pF
K/W
V =6 V
R
R
C
R
V =0 V, f=1 MHz
R
O
Thermal Resistance
Detector
1070
thJA
Voltage, Collector-Emitter
Voltage, Emitter-Base
Capacitance
V
≥ 55
≥ 7
10
V
I
=10 µA
I =10 µA
EB
CEO
CE
V
V
BEO
C
C
C
R
pF
pF
pF
K/W
V
=5 V, f=1 MHz
=5 V, f=1 MHz
V =5 V, f=1 MHz
CE
CE
CB
CE
Capacitance
16
V
CE
Capacitance
10
EB
Thermal Resistance
Package
500
thJA
Figure 3. Current transfer ratio (typ.)
=0.5 V, C =f(T , I )
V
CE
TR
A
F
Coupling Capacitance
C
0.60
pF
C
Coupling Transfer Ratio
SFH 608-2
I /I
63-125
75 (≥ 32)
100-200
120 (≥ 50)
160-320
200 (≥ 80)
250-500
%
%
%
%
%
%
%
%
I =1 mA, V =0.5 V
F CE
C
F
I =0.5 mA, V =1.5 V
F CE
SFH 608-3
SFH 608-4
SFH 608-5
I /I
I =1 mA, V =0.5 V
F CE
C
F
I =0.5 mA, V =1.5 V
F CE
I /I
I =1 mA, V =0.5 V
F CE
C
F
I =0.5 mA, V =1.5 V
F CE
I /I
I =1 mA, V =0.5 V
F CE
C
F
300 (≥ 125)
I =0.5 mA, V =1.5 V
F CE
Saturation Voltage,
Collector-Emitter
SFH 608-2
SFH 608-3
SFH 608-4
V
0.25 (≤ 0.4)
0.25 (≤ 0.4)
0.25 (≤ 0.4)
0.25 (≤ 0.4)
V
V
V
V
I =0.32 mA, I =1 mA
C F
CEsat
V
I = 0.5 mA, I =1 mA
CEsat
C F
V
I = 0.8 mA, I =1 mA
C F
CEsat
SFH 608-5
V
I =1.25 mA, I =1 mA
CEsat
C F
Leakage Current,
Collector-Emitter
I
10 (≤ 200)
nA
V =10 V
CE
CEO
Figure 1. Schematic
Figure 4. Current transfer ratio (typ.)
=1.5 V, C =f(T , I )
V
CE
TR
A
F
RL
IF
V
CC
IC
47Ω
I =2 mA (to adjust by I ), R =100 Ω, T =25°C, V =5 V
C
F
L
A
CC
Description
Symbol
Values
Unit
µs
Turn-On Time
Rise Time
t
t
t
t
8
ON
R
5
µs
Turn-Off Time
Fall Time
7.5
7
µs
OFF
F
µs
SFH608
5–2
Figure 11. Transistor capacitance
Figure 5. Diode forward voltage (typ.)
Figure 8. Output characteristics
(typ.) T =25°C, f=1 MHz, C =f(V )
T =25°C, V =f(I )
(typ.) T =25°C, I =f(V , I )
A
CE
CE
A
F
F
A
CE
CE
F
C
=f (V ), C =f (V
)
CB
CB
EB
EB
Figure 9. Permissible forward current
Figure 12. Collector-emitter leakage
current I =0, V =10 V, I =f(T )
Figure 6. Diode forward voltage (typ.)
diode I =f(T )
F
A
I =1 mA, V =f(T )
F
CE
CEO
A
F
F
A
Figure 10. Permissible power dissi-
pation P =f(T )
Figure 7. Output characteristics (typ.)
T =25°C, I =f(V , I )
TOT
A
A
CE
CE
B
SFH608
5–3
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