SFH608-2 [INFINEON]

PHOTOTRANSISTOR, 5.3 KV, TRIOS LOW CURRENT OPTOCOUPLER; PHOTOTRANSISTOR , 5.3千伏,三重奏低电流光电耦合器
SFH608-2
型号: SFH608-2
厂家: Infineon    Infineon
描述:

PHOTOTRANSISTOR, 5.3 KV, TRIOS LOW CURRENT OPTOCOUPLER
PHOTOTRANSISTOR , 5.3千伏,三重奏低电流光电耦合器

光电
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中文:  中文翻译
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SFH 608  
PHOTOTRANSISTOR, 5.3 KV,TRIOS  
LOW CURRENT  
OPTOCOUPLER  
FEATURES  
• Very High CTR at IF=1 mA, V =0.5 V  
Dimensions in inches (mm)  
CE  
Pin One ID  
- SFH608-2, 63-125%  
- SFH608-3, 100-200%  
- SFH608-4, 160-320%  
- SFH608-5, 250-500%  
2
1
3
Anode  
1
2
3
6
5
4
Base  
.248 (6.30)  
.256 (6.50)  
Cathode  
NC  
Collector  
Emitter  
• Specified Minimum CTR at I =0.5 mA,  
F
4
5
6
V
=1.5 V: 32% (typ. 120%)  
CE  
• Good CTR Linearity with Forward Current  
• Low CTR Degradation  
.335 (8.50)  
.343 (8.70)  
.300 (7.62)  
typ.  
• High Collector-Emitter Voltage V  
=55 V  
CEO  
.039  
(1.00)  
Min.  
• Isolation Test Voltage: 5300 VAC  
• Low Current Input  
RMS  
.130 (3.30)  
.150 (3.81)  
• Low Coupling Capacitance  
4°  
typ.  
18° typ.  
• High Common Mode Transient Immunity  
• Phototransistor Optocoupler in 6 Pin DIP  
Package  
.110 (2.79)  
.150 (3.81)  
.020 (.051) min.  
.010 (.25)  
.014 (.35)  
.031 (0.80)  
.035 (0.90)  
.018 (0.45)  
.022 (0.55)  
• Field Effect Stable:TRIOS*  
.300 (7.62)  
.347 (8.82)  
VE  
.100 (2.54) typ.  
D
VDE 0884 Available with Option 1  
• Underwriters Lab File #E52744  
• Applications  
- Telecommunications  
- Industrial Controls  
Maximum Ratings (T =25°C)  
A
Emitter  
Reverse Voltage ...................................................................................6 V  
DC Forward Current ........................................................................50 mA  
Surge Forward Current (tp10 µs) ................................................... 2.5 A  
Total Power Dissipation ................................................................. 70 mW  
- Office Machines  
- Microprocessor System Interfaces  
DESCRIPTION  
The SFH 608 is an optocoupler designed for high  
current transfer ratio at low input currents with the  
output transistor saturated. This makes the device  
ideal for low current switching applications. The  
SFH608 is packaged in a six pin plastic DIP.  
Detector  
Collector-Emitter Voltage .................................................................. 55 V  
Collector-Base Voltage .......................................................................55 V  
Emitter-Base Voltage ..........................................................................7 V  
Collector Current ............................................................................ 50 mA  
Surge Collector Current (tp1 ms) ................................................100 mA  
Total Power Dissipation ............................................................... 150 mW  
Isolation Test Voltage (between emitter and detector, refer  
*TRIOSTRansparent IOn Shield  
to climate DIN 40046 part 2 Nov. 74) (t=1 sec.)..............5300 VAC  
RMS  
Creepage .................................................................................................7 mm  
Clearance.................................................................................................7 mm  
Comparative Tracking Index  
per DIN IEC 112/VDE 0303, part1 ................................................... 175  
Isolation Resistance  
12  
V =500 V, T =25°C .........................................................................10  
IO  
A
11  
V =500 V, T =100°C.......................................................................≥10  
IO  
A
Storage Temperature Range .......................................... -55°C to +150°C  
Operating Temperature Range....................................... -55°C to +100°C  
Junction Temperature ......................................................................100°C  
Soldering Temperature (max. 10 sec., dip soldering:  
distance to seating plane1.5 mm) .............................................260°C  
5–1  
Figure 2. Switching times T =25°C,  
Characteristics (T =25°C, unless otherwise specified)  
A
A
I =1 mA, V =5 V, t , t , t , t , =f(R )  
F
CC  
ON  
R
OFF  
F
L
Symbol  
Typ  
Unit  
Condition  
Emitter  
Forward Voltage  
Reverse Voltage  
Reverse Current  
Capacitance  
V
1.1 (1.5)  
(6)  
V
I =5 mA  
F
F
V
V
I = 10 µA  
R
R
I
0.01 (10)  
25  
µA  
pF  
K/W  
V =6 V  
R
R
C
R
V =0 V, f=1 MHz  
R
O
Thermal Resistance  
Detector  
1070  
thJA  
Voltage, Collector-Emitter  
Voltage, Emitter-Base  
Capacitance  
V
55  
7  
10  
V
I
=10 µA  
I =10 µA  
EB  
CEO  
CE  
V
V
BEO  
C
C
C
R
pF  
pF  
pF  
K/W  
V
=5 V, f=1 MHz  
=5 V, f=1 MHz  
V =5 V, f=1 MHz  
CE  
CE  
CB  
CE  
Capacitance  
16  
V
CE  
Capacitance  
10  
EB  
Thermal Resistance  
Package  
500  
thJA  
Figure 3. Current transfer ratio (typ.)  
=0.5 V, C =f(T , I )  
V
CE  
TR  
A
F
Coupling Capacitance  
C
0.60  
pF  
C
Coupling Transfer Ratio  
SFH 608-2  
I /I  
63-125  
75 (32)  
100-200  
120 (50)  
160-320  
200 (80)  
250-500  
%
%
%
%
%
%
%
%
I =1 mA, V =0.5 V  
F CE  
C
F
I =0.5 mA, V =1.5 V  
F CE  
SFH 608-3  
SFH 608-4  
SFH 608-5  
I /I  
I =1 mA, V =0.5 V  
F CE  
C
F
I =0.5 mA, V =1.5 V  
F CE  
I /I  
I =1 mA, V =0.5 V  
F CE  
C
F
I =0.5 mA, V =1.5 V  
F CE  
I /I  
I =1 mA, V =0.5 V  
F CE  
C
F
300 (125)  
I =0.5 mA, V =1.5 V  
F CE  
Saturation Voltage,  
Collector-Emitter  
SFH 608-2  
SFH 608-3  
SFH 608-4  
V
0.25 (0.4)  
0.25 (0.4)  
0.25 (0.4)  
0.25 (0.4)  
V
V
V
V
I =0.32 mA, I =1 mA  
C F  
CEsat  
V
I = 0.5 mA, I =1 mA  
CEsat  
C F  
V
I = 0.8 mA, I =1 mA  
C F  
CEsat  
SFH 608-5  
V
I =1.25 mA, I =1 mA  
CEsat  
C F  
Leakage Current,  
Collector-Emitter  
I
10 (200)  
nA  
V =10 V  
CE  
CEO  
Figure 1. Schematic  
Figure 4. Current transfer ratio (typ.)  
=1.5 V, C =f(T , I )  
V
CE  
TR  
A
F
RL  
IF  
V
CC  
IC  
47  
I =2 mA (to adjust by I ), R =100 , T =25°C, V =5 V  
C
F
L
A
CC  
Description  
Symbol  
Values  
Unit  
µs  
Turn-On Time  
Rise Time  
t
t
t
t
8
ON  
R
5
µs  
Turn-Off Time  
Fall Time  
7.5  
7
µs  
OFF  
F
µs  
SFH608  
5–2  
Figure 11. Transistor capacitance  
Figure 5. Diode forward voltage (typ.)  
Figure 8. Output characteristics  
(typ.) T =25°C, f=1 MHz, C =f(V )  
T =25°C, V =f(I )  
(typ.) T =25°C, I =f(V , I )  
A
CE  
CE  
A
F
F
A
CE  
CE  
F
C
=f (V ), C =f (V  
)
CB  
CB  
EB  
EB  
Figure 9. Permissible forward current  
Figure 12. Collector-emitter leakage  
current I =0, V =10 V, I =f(T )  
Figure 6. Diode forward voltage (typ.)  
diode I =f(T )  
F
A
I =1 mA, V =f(T )  
F
CE  
CEO  
A
F
F
A
Figure 10. Permissible power dissi-  
pation P =f(T )  
Figure 7. Output characteristics (typ.)  
T =25°C, I =f(V , I )  
TOT  
A
A
CE  
CE  
B
SFH608  
5–3  

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