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SGB02N120XT [INFINEON]

Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN;

SGB02N120XT


元器件型号：	SGB02N120XT
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN 晶体晶体管功率控制双极性晶体管栅
PDF文件：	总11页 (文件大小：434K)
下载文档：	下载PDF数据表文档文件
型号参数：SGB02N120XT参数

SGB02N60

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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18 INFINEON

SGB02N60

FAST IGBT IN NPT TECHNOLOGY

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11 INFINEON

SGB02N60

FAST IGBT IN NPT TECHNOLOGY

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76 INFINEON

SGB02N60_06

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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14 INFINEON

SGB02N60ATMA1

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3

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0 INFINEON

SGB04N60

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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10 INFINEON

SGB04N60

Fast IGBT in NPT-technology

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18 INFINEON

SGB04N60

Fast IGBT in NPT-technology

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32 INFINEON

SGB04N60_06

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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11 INFINEON

SGB06N60

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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25 INFINEON

SGB06N60

Fast IGBT in NPT-technology

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6 INFINEON

SGB06N60

Fast IGBT in NPT-technology

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27 INFINEON

SGB06N60_06

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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18 INFINEON

SGB06N60ATMA1

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3

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0 INFINEON

SGB07N120

Fast IGBT in NPT-technology lower Eoff compared to previous generation

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43 INFINEON

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