SGB20N60ATMA1 [INFINEON]

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3;
SGB20N60ATMA1
型号: SGB20N60ATMA1
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3

栅 瞄准线 功率控制 晶体管
文件: 总11页 (文件大小:790K)
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SGB20UF

60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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4 SSDI

SGB20UF

HIGH VOLTAGE RECTIFIER

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11 SSDI

SGB20UFS

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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0 SSDI

SGB20UFS

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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0 SSDI

SGB20UFSMS

60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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3 SSDI

SGB20UFSMS

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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6 SSDI

SGB20UFSMSS

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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15 SSDI

SGB20UFSMSS

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED, SMS, 2 PIN

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0 SSDI

SGB20UFSMSTX

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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6 SSDI

SGB20UFSMSTXV

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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7 SSDI

SGB20UFSMSTXV

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED, SMS, 2 PIN

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-
0 SSDI

SGB20UFTX

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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-
0 SSDI

SGB20UFTXV

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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-
0 SSDI

SGB20UFTXV

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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-
0 SSDI

SGB-2233

DC - 4.5 GHz Active Bias Gain Block

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18 SIRENZA