SGP10N60A_09 [INFINEON]

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation; 在NPT技术降低75 %的Eoff快速IGBT相比上一代
SGP10N60A_09
型号: SGP10N60A_09
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
在NPT技术降低75 %的Eoff快速IGBT相比上一代

双极性晶体管
文件: 总12页 (文件大小:349K)
下载:  下载PDF数据表文档文件

SGP10N60RUF

Short Circuit Rated IGBT

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45 FAIRCHILD

SGP10N60RUFD

Short Circuit Rated IGBT

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128 FAIRCHILD

SGP10N60RUFDJ69Z

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220, 3 PIN

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0 FAIRCHILD

SGP10N60RUFDTU

16A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220, 3 PIN

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0 ROCHESTER

SGP10N60RUFDTU

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

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0 FAIRCHILD

SGP10N60RUFJ69Z

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220, 3 PIN

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0 FAIRCHILD

SGP12A

GPS SMT Patch Antenna

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25 ETC

SGP13N60UF

Ultra-Fast IGBT

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41 FAIRCHILD

SGP13N60UF

Ultra-Fast IGBT

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12 FAIRCHILD

SGP13N60UFD

Ultra-Fast IGBT

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70 FAIRCHILD

SGP13N60UFDJ69Z

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220, 3 PIN

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0 FAIRCHILD

SGP13N60UFDTU

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

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0 FAIRCHILD

SGP13N60UFJ69Z

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220, 3 PIN

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0 FAIRCHILD

SGP13N60UFTU

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

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0 FAIRCHILD

SGP13N60UFTU

13A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220, 3 PIN

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0 ROCHESTER